arXiv subjects

Yuichiro Ando

Publications and source records attributed to Yuichiro Ando.

At least 19 recordsLinked to original sources

arXiv2025

On-chip Dicke-type magnon polaritons in the ultrastrong coupling regime via spatially separated nanomagnets

Quantum electrodynamics lies at the heart of hybrid quantum systems essential for future technologies. The thermodynamic limit of the Dicke model, a fundamental model describing these systems, predicts exotic quantum phenomena, such as equilibrium superradiant phase transitions and ground-state two-mode squeezing. However, the experimental realization of genuine Dicke systems has remained elusive due to the inevitable existence of gauge-invariant self-interaction terms that hinder such phenomena. Here, we report on the on-chip realization of a Dicke-type system utilizing ultrastrong magnetic-dipole interactions between collective excitations in a spatially separated ferromagnetic array and a superconducting resonator, resulting in creation of magnon polaritons. Crucially, this spatially separated architecture allows the cooperative enhancement of the coupling strength without increasing the self-interaction energy. We experimentally confirm the Bloch-Siegert shift, originating from the counter-rotating terms, alongside the suppression of self-excitation terms required to observe critical Dicke physics. Our results establish a versatile platform, which provides the playground to explore quantum collective coupling physics and open pathways towards integrated quantum devices harnessing Dicke physics.

quant-ph↗

arXiv2025

Tunable Magnon Polaritons via Eddy-Current-Induced Dissipation in Metallic-Banded YIG Spheres

We demonstrate a robust method to dynamically tune magnon dissipation in yttrium iron garnet spheres by equipping a metallic band around the sphere's equator, enabling precise control over magnon-photon coupling states. The collective magnetization dynamics in the YIG sphere induce circular eddy currents in the metallic band, whose magnitude can be systematically varied by adjusting the angle between the metallic band plane and an external static magnetic field. This angular dependence yields a pronounced modulation of the ferromagnetic resonance (FMR) linewidth, facilitating seamless transitions between the Purcell and strong coupling regimes without altering photon cavity parameters. Systematic FMR and cavity spectroscopy measurements confirm that eddy-current-induced losses govern the primary mechanism behind the observed tunable damping. By achieving extensive periodic-angular dependence of magnon relaxation rate, we precisely control the magnon-photon coupling state, approaching the critical coupling condition. These results establish the YIG-metallic-band platform as a versatile and practical approach for engineering tunable magnon-polariton systems and advancing magnonic applications, including those exploring non-Hermitian magnonics.

cond-mat.mes-hall↗

arXiv2024

Circular photogalvanic effect in an inversion-symmetry-broken bilayer germanium nanosheet

Spin-to-charge conversion in monolayer and bilayer germanium(Ge) nanosheets was demonstrated via the circular photogalvanic effect (CPGE). The CPGE current generated in a spin-splitting state of the Ge nanosheet reached a maximum value when the thickness of the Ge nanosheet corresponded to bilayer germanene, indicating that the top layer of the bilayer Ge nanosheet mainly contributed to the spin-to-charge conversion. Because the hybridization of orbitals is suppressed by isolation from the bottom Al layer for the top Ge nanosheet, the observed spin-to-charge conversion has a possibility to be related to the intrinsic features of germanene with breaking of inversion symmetry.

cond-mat.mtrl-sci↗

arXiv2024

Emergence of giant spin-orbit torque in a two-dimensional hole gas on the hydrogen-terminated diamond surface

Two-dimensional (2D) carrier systems exhibit various significant physical phenomena for electronics and spintronics, where one of the most promising traits is efficient spin-to-charge conversion stemming from their Rashba-type spin-orbit interaction. Meanwhile, a nuisance in quests of promising materials for spintronics application is that vast majority of the investigated platforms consists of rare and/or toxic elements, such as Pt and Te, which hinders progress of spin conversion physics in view of element strategy and green technology. Here, we show the emergence of giant spin-orbit torque driven by 2D hole gas at the surface of hydrogen-terminated diamond, where the constituent substances are ubiquitous elements, carbon and hydrogen. The index of its spin torque efficiency at room temperature is several times greater than that of rare metal, Pt, the benchmark system/element for spin-to-charge conversion. Our finding opens a new pathway for more sustainable spintronics and spin-orbitronics applications, with efficient spin-orbit torque employing ubiquitous non-toxic elements.

cond-mat.mes-hall↗

arXiv2024

Field-free superconducting diode effect in layered superconductor FeSe

The superconducting diode effect (SDE), where zero-resistance states appear nonreciprocally during current injection, is receiving tremendous interest in both fundamental and applied physics because the SDE is a novel manifestation of symmetry breaking and enables the creation of a novel diode. In particular, magnetic-field-free SDEs have been extensively investigated because of their potential to serve as building blocks for superconducting circuit technology. In this letter, we report the field-free SDE in a layered superconductor, FeSe. Its underlying physics is clarified by systematic controlled experiments to be an interplay of a large thermoelectric response and geometrical asymmetry in FeSe. Our findings can pave a new avenue for the construction of novel material and device platforms utilizing SDEs.

cond-mat.mtrl-sci↗

arXiv2023

Gigantic Anisotropy of Self-Induced Spin-Orbit Torque in Weyl Ferromagnet Co2MnGa

Spin-orbit torque (SOT) is receiving tremendous attention from both fundamental and application-oriented aspects. Co2MnGa, a Weyl ferromagnet that is in a class of topological quantum materials, possesses cubic-based high structural symmetry, the L21 crystal ordering, which should be incapable of hosting anisotropic SOT in conventional understanding. Here we show the discovery of a gigantic anisotropy of self-induced SOT in Co2MnGa. The magnitude of the SOT is comparable to that of heavy metal/ferromagnet bilayer systems despite the high inversion symmetry of the Co2MnGa structure. More surprisingly, a sign inversion of the self-induced SOT is observed for different crystal axes. This finding stems from the interplay of the topological nature of the electronic states and their strong modulation by external strain. Our research enriches the understanding of the physics of self-induced SOT and demonstrates a versatile method for tuning SOT efficiencies in a wide range of materials for topological and spintronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Modulation of Hanle magnetoresistance in an ultrathin platinum film by ionic gating

Hanle magnetoresistance (HMR) is a type of magnetoresistance where interplay of the spin Hall effect, Hanle-type spin precession, and spin-dependent scattering at the top/bottom surfaces in a heavy metal controls the effect. In this study, we modulate HMR in ultrathin Pt by ionic gating, where the surface Rashba field created by a strong electric field at the interface between the ionic gate and Pt plays the dominant role in the modulation. This finding can facilitate investigations of gate-tunable, spin-related effects and fabrication of spin devices.

cond-mat.mes-hall↗

arXiv2022

Anomalous sign inversion of spin-orbit torque in ferromagnetic/nonmagnetic bilayer systems due to self-induced spin-orbit torque

Self-induced spin-orbit torques (SI-SOTs) in ferromagnetic (FM) layers have been overlooked when estimating the spin Hall angle (SHA) of adjacent nonmagnetic (NM) layers. In this work, we observe anomalous sign inversion of the total SOT in the spin-torque ferromagnetic resonance due to the enhanced SI-SOT, and successfully rationalize the sign inversion through a theoretical calculation considering the SHE in both the NM and FM layers. The findings show that using an FM layer whose SHA sign is the same as that of the NM achieves efficient SOT-magnetization switching with the assistance of the SI-SOT. The contribution of the SI-SOT becomes salient for a weakly conductive NM layer, and conventional analyses that do not consider the SI-SOT can overestimate the SHA of the NM layer by a factor of more than 150.

cond-mat.mtrl-sci↗

arXiv2022

All-electric spin device operation using the Weyl semimetal, WTe$_2$, at room temperature

Topological quantum materials (TQMs) possess abundant and attractive spin physics, and a Weyl semimetal is the representative material because of the generation of spin polarization that is available for spin devices due to fictitious Weyl monopoles at the edge of the Weyl node. Meanwhile, a Weyl semimetal allows the other but unexplored spin polarization due to local symmetry breaking. Here, we report all-electric spin device operation using a type-II Weyl semimetal, WTe$_2$, at room temperature. The polarization of spins propagating in the all-electric device is perpendicular to the WTe$_2$ plane, which is ascribed to local in-plane symmetry breaking in WTe$_2$, yielding the spin polarization creation of propagating charged carriers, namely, the spin-polarized state creation from the non-polarized state. Systematic control experiments unequivocally negate unexpected artifacts, such as the anomalous Hall effect, the anisotropic magnetoresistance etc. Creation of all-electric spin devices made of TQMs and their operation at room temperature can pave a new pathway for novel spin devices made of TQMs resilient to thermal fluctuation.

cond-mat.mes-hall↗

arXiv2022

Observation of gigantic spin conversion anisotropy in bismuth

Whilst the g-factor can be anisotropic due to the spin-orbit interaction (SOI), its existence in solids cannot be simply asserted from a band structure, which hinders progress on studies from such the viewpoints. The g-factor in bismuth (Bi) is largely anisotropic; especially for holes at T-point, the g-factor perpendicular to the trigonal axis is negligibly small (< 0.112), whereas the g-factor along the trigonal axis is very large (62.7). We clarified in this work that the large g- factor anisotropy gives rise to the gigantic spin conversion anisotropy in Bi from experimental and theoretical approaches. Spin-torque ferromagnetic resonance was applied to estimate the spin conversion efficiency in rhombohedral (110) Bi to be 17%, which is unlike the negligibly small efficiency in Bi(111). Harmonic Hall measurements supports the large spin conversion efficiency in Bi(110). This is the first observation of gigantic spin conversion anisotropy as the clear manifestation of the g-factor anisotropy. Beyond the emblematic case of Bi, our study unveiled the significance of the g-factor anisotropy in condensed-matter physics and can pave a pathway toward establishing novel spin physics under g-factor control.

cond-mat.mtrl-sci↗

arXiv2020

Inplane spin orbit torque magnetization switching and its detection using the spin rectification effect at sub-GHz frequencies

Inplane magnetization reversal of a permalloy/platinum bilayer was detected using the spin rectification effect. Using a sub GHz microwave frequency to excite spin torque ferromagnetic resonance (ST FMR) in the bilayer induces two discrete DC voltages around an external static magnetic field of 0 mT. These discrete voltages depend on the magnetization directions of the permalloy and enable detection of the inplane magnetization reversal. The threshold current density for the magnetization reversal is from 10 to 20 MA/cm^2, the same order as for known spin orbit torque (SOT) switching with in-plane magnetization materials. The magnitude of the signal is the same or larger than that of the typical ST FMR signal; that is, detection of magnetization switching is highly sensitive in spite of deviation from the optimal ST-FMR condition. The proposed method is applicable to a simple device structure even for a small ferromagnetic electrode with a width of 100 nm.

cond-mat.mtrl-sci↗

arXiv2020

Modulation of spin conversion in a 1.5 nm-thick Pd film by ionic gating

Gate-induced modulation of the spin-orbit interaction (SOI) in a 1.5 nm-thick Pd thin film grown on a ferrimagnetic insulator was investigated. Efficient charge accumulation by ionic gating enables a substantial upshift in the Fermi level of the Pd film, which was corroborated by suppression of the resistivity in the Pd. Electromotive forces arising from the inverse spin Hall effect in Pd under spin pumping were substantially modulated by the gating, in consequence of the modulation of the spin Hall conductivity of Pd as in an ultrathin Pt film. The same experiment using a thin Cu film, for which the band structure is largely different from Pd and Pt and its SOI is quite small, provides further results supporting our claim. The results obtained help in developing a holistic understanding of the gate-tunable SOI in solids and confirm a previous explanation of the significant modulation of the spin Hall conductivity in an ultrathin Pt film by gating.

cond-mat.mtrl-sci↗

arXiv2020

Spin transport in a lateral spin valve with a suspended Cu channel

We study spin transport through a suspended Cu channel by an electrical non-local 4-terminal measurement for future spin mechanics applications. A magnetoresistance due to spin transport through the suspended Cu channel is observed, and its magnitude is comparable to that of a conventional fixed Cu lateral spin valve. The spin diffusion length in the suspended Cu channel is estimated to be 340 nm at room temperature from the spin signal dependence on the distance between the ferromagnetic injector and detector electrodes. This value is found to be slightly shorter than in a fixed Cu. The decrease in the spin diffusion length in the suspended Cu channel is attributed to an increase in spin scattering originating from naturally oxidized Cu at the bottom of the Cu channel.

physics.app-ph↗

arXiv2020

Optical visualization of the enhanced spin Hall effect in bismuth doped silicon

Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a dc current to the Bi-doped Si, clear helicity-dependent photovoltages are detected at the edges of the Si channel, indicating a perpendicular spin accumulation due to the SHE. In contrast, the HDP signals are negligibly small for phosphorus-doped Si. Compared to a platinum channel, which has a large spin Hall angle, more than two-orders of magnitude larger HDP signals are obtained in the Bi-doped Si.

cond-mat.mtrl-sci↗

arXiv2019

Investigation of gating effect in Si spin MOSFET

A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while keeping constant electric current. An unprecedented reduction in the spin accumulation voltages in a Si spin MOSFET under negative gate voltage applications is observed in a high electric bias current regime. To support our claim, the electric bias current dependence of the spin accumulation voltage under the gate voltage applications is investigated in detail and compared to a spin drift diffusion model including the conductance mismatch effect. We proved that the drastic decrease of the mobility and spin lifetime in the Si channel is due to the optical phonon emission at the high electric bias current, which consequently reduced the spin accumulation voltage.

physics.app-ph↗

arXiv2018

Tunable inverse spin Hall effect in nanometer-thick platinum films by ionic gating

Electric gating can strongly modulate a wide variety of physical properties in semiconductors and insulators, such as significant changes of conductivity in silicon, appearance of superconductivity in SrTiO3, the paramagnet-ferromagnet transition in (In,Mn)As and so on. The key to such modulation is charge accumulation in solids. Thus, it has been believed that such modulation is out of reach for conventional metals where the number of carriers is too large. However, success in tuning the Curie temperature of ultrathin cobalt gave hope of finally achieving such degree of control even in metallic materials. Here, we show reversible modulation of up to two orders of magnitude of the inverse spin Hall effect - a phenomenon that governs interconversion between spin and charge currents - in ultrathin platinum. Spin-to-charge conversion enables the generation and use of electric and spin currents in the same device, which is crucial for the future of spintronics and electronics.

cond-mat.mes-hall↗

arXiv2018

Spin-wave-induced lateral temperature gradient in a YIG thin film/GGG system excited in an ESR cavity

Lateral thermal gradient of an yttrium iron garnet (YIG) film under the microwave application in the cavity of the electron spin resonance system (ESR) was measured at room temperature by fabricating a Cu/Sb thermocouple onto it. To date, thermal transport in YIG films caused by the Damon-Eshbach mode (DEM) - the unidirectional spin-wave heat conveyer effect - was demonstrated only by the excitation using coplanar waveguides. Here we show that effect exists even under YIG excitation using the ESR cavity - tool often employed to realize spin pumping. The temperature difference observed around the ferromagnetic resonance (FMR) field under the 4 mW microwave power peaked at 13 mK. The observed thermoelectric signal indicates the imbalance of the population between the DEMs that propagate near the top and bottom surfaces of the YIG film. We attribute the DEM population imbalance to the different magnetic damping near the top and bottom YIG surfaces. Additionally, the spin wave dynamics of the system were investigated using the micromagnetic simulations. The micromagnetic simulations confirmed the existence of the DEM imbalance in the system with the increased Gilbert damping at one of the YIG interfaces. The reported results are indispensable for the quantitative estimation of the electromotive force in the spin-charge conversion experiments using ESR cavities.

cond-mat.mtrl-sci↗

arXiv2018

Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a non-degenerate Si spin valve

Spin accumulation voltages in a non-degenerate Si spin valve are discussed quantitatively as a function of electric bias current using systematic experiments and model calculations. As an open question in semiconductor spintronics, the origin of the deviation of spin accumulation voltages measured experimentally in a non-degenerate Si spin valve is clarified from that obtained by model calculation using the spin drift diffusion equation including the effect of the spin-dependent interfacial resistance of tunneling barriers. Unlike the case of metallic spin valves, the bias dependence of the resistance-area product for a ferromagnet/MgO/Si interface, resulting in the reappearance of the conductance mismatch, plays a central role to induce the deviation.

cond-mat.mtrl-sci↗