arXiv subjects

Yuki Arai

Publications and source records attributed to Yuki Arai.

5 recordsLinked to original sources

arXiv2026

Robust topological surface states in skyrmion-host magnets Eu(Ga,Al)4: evidence for dual topology

The interplay between real-space topology such as magnetic skyrmions and momentum-space topology characterized by topological surface states (TSSs) is predicted to realize novel phenomena and functionalities, yet materials hosting both topologies are scarce. Skyrmion-hosting helimagnet family EuGa$_2$Al$_2$ and EuAl$_4$ has been a prime candidate for such a dual-topology system, but conclusive evidence for its momentum-space topology has remained elusive. We provide this evidence by directly observing TSSs that stem from bulk Dirac nodal lines using high-resolution angle-resolved photoemission spectroscopy. These TSSs are exceptionally robust against various perturbations such as a 2$\times$1 surface reconstruction, a chemical change in the termination of the crystal surface, and the onset of helical antiferromagnetic order. Crucially, below the Neel temperature, we observe replica bands driven by the magnetic ordering. Moreover, we demonstrate clear surface-termination dependence of this magneto-topological coupling. Our findings establish Eu(Ga$_{1-x}$Al$_x$)$_4$ as a dual-topology material and offer a rare platform to explore and control the interaction between the two fundamental topological realms.

cond-mat.str-el↗

arXiv2026

Spontaneous Anomalous Hall Effect at Room Temperature in Antiferromagnetic Material NbMnAs

Recent studies have shown that certain antiferromagnetic (AFM) materials with the same symmetry breaking as ferromagnets can generate sufficiently large ferromagnetic (FM) responses. Here, we report that the new AFM material NbMnAs exhibits a large anomalous Hall effect (AHE) at zero field and at room temperature, despite having only a small net magnetization. A polycrystalline sample of NbMnAs, likely close to stoichiometric composition, exhibited an AFM state with a small spontaneous magnetization of approximately $6 \times 10^{-3} μ_{\rm B}$/Mn and the AHE below $T_{\rm N}=354\,{\rm K}$. In contrast, single crystals of NbMnAs obtained by a flux method exhibited a deficiency at the As site, {which resulted} in a decrease in $T_{\rm N}$ and an increase in spontaneous magnetization. Although improvement of the single-crystal growth is still required, our study reveals that NbMnAs is a novel material capable of exhibiting significant FM responses derived from antiferromagnetism at room temperature.

cond-mat.str-el↗

arXiv2024

Large spontaneous Hall effect with flexible domain control in an antiferromagnetic material TaMnP

Antiferromagnets without parity-time ($\mathcal{PT}$) symmetry offer novel perspectives in the field of functional magnetic materials. Among them, those with ferromagnetic-like responses are promising candidates for future applications such as antiferromagnetic (AF) memory; however, examples showing large effects are extremely limited. In this study, we show that the orthorhombic system TaMnP exhibits a large anomalous Hall conductivity (AHC) $\sim360-370$ $Ω^{-1}$cm$^{-1}$ in spite of the small net magnetization $\sim10^{-2}$ $μ_B$/Mn. Our neutron scattering experiment and the observation of the AH effect indicated that a magnetic structure of TaMnP was dominated by an AF component represented by $B_{3g}$ with the propagation vector $q=0$. Furthermore, we confirmed that the obtained AHC is among the largest observed in AF materials at zero fields. Additionally, our first-principles calculations revealed that the spin-orbit interaction originating in the nonmagnetic Ta-$5d$ electrons significantly contributes to enhancing Berry curvatures in the momentum space. We found that the magnetic fields along all the crystal axes triggered the AF domain switching, indicating the possibility of controlling the AF domain using the small net magnetization, which is symmetrically different.

cond-mat.str-el↗

arXiv2024

Intrinsic anomalous Hall effect arising from antiferromagnetic structure revealed by high-quality NbMnP

The large anomalous Hall effect (AHE) in antiferromagnetic (AF) materials arises from symmetry breaking equivalent to a ferromagnetic (FM) state. Consequently, this suggests that the observed AHE is induced by the intrinsic mechanism of the band structure effect, which in turn induces dissipationless transverse conductivity. Confirmation of impurity-insensitive anomalous Hall conductivity (AHC) is crucial to conclude this interpretation; however, experimental investigations in AF materials are limited by the lack of high quality systems. In this study, we show that the AF material NbMnP, which exhibits a large AHE, offers a high quality single crystal. Our findings clearly revealed that the large AHC and the tiny net magnetization of $\sim10^{-3} μ_{\mathrm{B}}$/Mn are inherent in this material, irrespective of disorder. NbMnP is a novel AF material that generates FM responses in the regime where there is less impurity scattering.

cond-mat.mes-hall↗

arXiv2023

Large anomalous Hall effect and unusual domain switching in an orthorhombic antiferromagnetic material NbMnP

Specific antiferromagnetic (AF) spin configurations generate large anomalous Hall effects (AHEs) even at zero magnetic field through nonvanishing Berry curvature in momentum space. In addition to restrictions on AF structures, suitable control of AF domains is essential to observe this effect without cancellations among its domains; therefore, compatible materials remain limited. Here we show that an orthorhombic noncollinear AF material, NbMnP, acquired AF structure-based AHE and controllability of the AF domains. Theoretical calculations indicated that a large Hall conductivity of $\sim230$ $Ω^{-1}$cm$^{-1}$ originated from the AF structure of NbMnP. Symmetry considerations explained the production of a small net magnetization, whose anisotropy enabled the generation and cancellation of the Hall responses using magnetic fields in different directions. Finally, asymmetric hysteresis in NbMnP shows potential for development of controllability of responses in AF materials.

cond-mat.str-el↗