arXiv subjects

Yuki Fuseya

Publications and source records attributed to Yuki Fuseya.

At least 19 recordsLinked to original sources

arXiv2026

Impact of spin--orbit coupling on orbital diamagnetism in a narrow-gap semiconductor $\mathrm{Pb}_{1-x}\mathrm{Sn}_x\mathrm{Te}$

We study the influence of spin--orbit coupling (SOC) on orbital magnetism in $\mathrm{Pb}_{1-x}\mathrm{Sn}_x\mathrm{Te}$, a narrow-gap semiconductor. Using the $\pi$-matrix method, we calculate material-specific Landau levels and evaluate the magnetization, fully including interband effects. The system exhibits diamagnetism for both $x = 0$ and $x = 0.35$, with the latter showing a stronger response due to its smaller gap. The magnitude of diamagnetism increases monotonically with SOC strength, particularly in strong magnetic fields. To clarify the underlying mechanism, we introduce the free--Zeeman--Dirac (fZD) model and fit its parameters to the calculated Landau levels. The analysis reveals that SOC enhances the Dirac-type interband contribution relative to the Zeeman term, leading to increased diamagnetism. These results demonstrate that SOC can play a key role in orbital magnetism through interband effects.

cond-mat.mtrl-sci↗

arXiv2026

Classical transport theory for the planar Hall effect with threefold symmetry

In recent years, the planar Hall effect (PHE) has become a key probe of Berry curvature and the anomalous Hall effect (AHE). Threefold-symmetric signals under in-plane fields are often attributed to such quantum mechanisms. Here, we establish a purely classical origin for a three-fold-symmetric PHE. The idea is simple yet decisive: a third-order expansion of the Boltzmann equation in the magnetic field reveals that the threefold component originates from the relative positions of the mirror planes in the crystals with respect to the measurement setups. Remarkably, the threefold contribution should be ubiquitous because this symmetry condition can be realized across a broad range of crystals. Numerical estimates based on concrete models further show that its amplitude is comparable to that expected from the AHE.

cond-mat.mes-hall↗

arXiv2025

Symmetry-resolved magnetoelastoresistance in multivalley bismuth

We report a symmetry-resolved study of longitudinal magnetoelastoresistance (MER) in the multivalley material bismuth, with the current, uniaxial stress, and magnetic field all applied along the binary axis. The magnitude of MER exhibits a steep increase at low magnetic fields, reaches a peak, and then gradually decreases at higher fields. By decomposing the strain response into symmetric and antisymmetric symmetry channels, we reveal contrasting magnetic field dependencies. Despite the overall non-monotonic field dependence of the MER, the symmetric component remains nearly constant under magnetic fields, suggesting that the valleys in bismuth preserve a rigid-band nature against strain even in the presence of a magnetic field. In contrast, the antisymmetric component, associated with mobility anisotropy, dominates the MER response in a magnetic field. At low magnetic fields, the applied field effectively modifies the apparent mobility of each valley, leading to an enhancement in the magnitude of the antisymmetric MER. At higher fields, field-induced valley polarization further modifies this mobility anisotropy by altering the contributions from each valley's mobility, accounting for the moderate suppression of the MER. These findings demonstrate that symmetry-resolved MER serves as a powerful probe of valley-dependent electronic states and provides a fundamental platform for understanding the interplay between magnetic field, strain, and charge transport.

cond-mat.mes-hall↗

arXiv2025

Magnetic Moment vs Angular Momentum: Spin Hall Response in Bismuth

Spin currents can carry either spin angular momentum or its associated magnetic moment, which are no longer strictly proportional in multiband systems. Using a multiband $k \cdot p$ model, we compute the intrinsic spin Hall conductivity tensors of elemental Bi. The magnetic-moment tensor emerges about two orders of magnitude larger and far less anisotropic than the angular-momentum tensor, while quasiparticle damping activates otherwise longitudinal components. The magnetic-moment spin Hall angle exceeds unity, demonstrating that a clear distinction between the two currents is indispensable for multiband systems.

cond-mat.mes-hall↗

arXiv2025

Magnetoresistance in the Extreme Quantum Limit: Field-Induced Crossover to the Unitarity Limit

We theoretically investigate magnetoresistance (MR) in the extreme quantum limit (EQL), where the kinetic energy becomes significantly smaller than the cyclotron energy, using the Kubo formula with Green's functions and the $T$-matrix approximation. We uncover a magnetic-field-induced crossover in the scattering rate: $1/\tau \propto B^2$ in the Born regime and $1/\tau \propto B^{-2}$ in the unitarity limit. This crossover gives rise to distinct MR behaviors in the EQL, characterized by linear transverse MR ($\rho_{xx} \propto B$) and negative longitudinal MR ($\rho_{zz} \propto B^{-2}$). This dichotomy implies insulating behavior when the magnetic field is perpendicular to the current, and metallic behavior when it is parallel. In the unitarity limit, we further derive a universal relation that enables direct experimental determination of the impurity density from $\rho_{xx}$ and $\rho_{xy}$. Our results establish a quantum--classical correspondence that remains valid even in the EQL, provided that the field dependences of the scattering rate and quantum corrections are properly incorporated.

cond-mat.mtrl-sci↗

arXiv2025

Pseudo anomalous Hall effect in semiconductors and semimetals: A classical perspective

We demonstrate that the non-linear field dependence in the Hall effect, often indistinguishable from the anomalous Hall effect, can be realized entirely within the classical mechanism due to the Lorentz force by analyzing multi-valley models for semiconductors and semimetals. The non-linear component in the Hall resistivity $\rho_H^{\rm NL}$ originates from carrier mobility anisotropy or the coexistence of different charges. Since $\rho_H^{\rm NL}$ is inversely proportional to the carrier difference between electrons and holes $\Delta n$, it exceeds its zero-field value near charge neutrality. As a practical example, we show that the magnitude of the classical non-linear Hall response in ZrTe$_5$ is comparable to the experimental values, underscoring the importance of accounting for classical contributions before attributing non-linear Hall effects to quantum mechanisms.

cond-mat.mes-hall↗

arXiv2025

Topological blocking at the Bi(111) surface due to surface relaxation

The topological characteristics of Bi and its alloys with Sb have fueled intense debate since the prediction of three-dimensional topological insulators. However, a definitive resolution has not been reached to date. Here, we provide theoretical evidence that surface relaxation conceals the underlying bulk topology of pure Bi. Using density functional theory calculations for thin Bi(111) films (up to 17 bilayers), we first demonstrate a substantial inter-bilayer expansion near the surface. Motivated by this finding, we extend our analysis to thick Bi(111) films (up to 250 bilayers) incorporating relaxation layers, within the framework of a relativistic empirical tight-binding model. Our results reveal that these relaxation layers topologically block the emergence of surface state and significantly suppress the one-particle spectrum of surface states, thereby obscuring the experimental identification of Bi's topological properties. This phenomenon, which we term "topological blocking", provides crucial insights into the long-standing difficulty of observing surface states of Bi(111) at the $\bar{M}$ point. Furthermore, it establishes a framework for understanding and predicting the topological behavior in systems where surface relaxation disrupts the bulk-edge correspondence.

cond-mat.mtrl-sci↗

arXiv2023

High-field immiscibility of electrons belonging to adjacent twinned bismuth crystals

Bulk bismuth has a complex Landau spectrum. The small effective masses and the large g-factors are anisotropic. The chemical potential drifts at high magnetic fields. Moreover, twin boundaries further complexify the interpretation of the data by producing extra anomalies in the extreme quantum limit. Here, we present a study of angle dependence of magnetoresistance up to 65 T in bismuth complemented with Nernst, ultrasound, and magneto-optic data. All observed anomalies can be explained in a single-particle picture of a sample consisting of two twinned crystals tilted by 108$^{\circ}$ and with two adjacent crystals keeping their own chemical potentials despite a shift between chemical potentials as large as 68 meV at 65 T. This implies an energy barrier between adjacent twinned crystals reminiscent of a metal-semiconductor Schottky barrier or a p-n junction. We argue that this barrier is built by accumulating charge carriers of opposite signs across a twin boundary.

cond-mat.mtrl-sci↗

arXiv2023

Effects of strain-tunable valleys on charge transport in bismuth

The manipulation of the valley degree of freedom can boost the technological development of novel functional devices based on valleytronics. The current mainstream platform for valleytronics is to produce a monolayer with inversion asymmetry, in which the strain-band engineering through the substrates can serve to improve the performance of valley-based devices. However, pinpointing the effective role of strain is inevitable for the precise design of the desired valley structure. Here, we demonstrate the charge transport under continuously controllable external strain for bulk bismuth crystals with three equivalent electron valleys and one hole valley. The strain response of resistance, namely elastoresistance, exhibits the evolutions in both antisymmetric and symmetric channels with decreasing temperature. The elastoresistance behaviors mainly reflect the significant changes in valley density depending on the symmetry of induced strain, evidenced by our strain-dependent quantum oscillation measurements and first-principle band calculations under strain. These facts suggest the successful tune and evaluation of the valley populations through strain-dependent charge valley transport.

cond-mat.mtrl-sci↗

arXiv2023

Quantum--classical correspondence and dissipative to dissipationless crossover in magnetotransport phenomena

The three-dimensional magneto-conductivity tensor was derived in a gauge invariant form based on the Kubo formula considering the quantum effect under a magnetic field, such as the Landau quantization and the quantum oscillations. We analytically demonstrated that the quantum formula of the magneto-conductivity can be obtained by adding a quantum oscillation factor to the classical formula. This result establishes the quantum--classical correspondence, which has long been missing in magnetotransport phenomena. Moreover, we found dissipative-to-dissipationless crossover in the Hall conductivity by paying special attention to the analytic properties of thermal Green's function. Finally, by calculating the magnetoresistance of semimetals, we identified a phase shift in quantum oscillation originating from the dissipationless transport predominant at high fields.

cond-mat.mes-hall↗

arXiv2023

Negative transverse magnetoresistance due to negative off-diagonal mass in linear dispersion materials

This study calculated the magnetoresistance (MR) in the Dirac electron system, Dressellhaus-Kip-Kittel (DKK) model, and nodal-line semimetals based on the semiclassical Boltzmann theory, with particular focus on the detailed energy dispersion structure. The negative off-diagonal effective-mass was found to induce negative transverse MR owing to the energy dispersion effect. The impact of the off-diagonal mass was more prominent in case of a linear energy dispersion. Further, Dirac electron systems could realize negative MR even if the Fermi surface was perfectly spherical. The obtained negative MR in the DKK model may explain the long-standing mystery in p-type Si.

cond-mat.mes-hall↗

arXiv2022

Long-range permeation of wave function and superficial surface state due to strong quantum size effects in topological Bi/BiSb heterojunctions

The quantum size effect has a significant impact on electrons, such that it can even change their topologically protected properties. An example of this phenomenon is the gap opening in the topologically protected gapless surface state in finite-thickness topological-insulator films. However, much is not known about the quantum size effect in topological heterojunctions. In this study, by calculating the single-particle spectrum of Bi/Bi$_{1-x}$Sb$_{x}$ based on the well-known Liu-Allen model, we found that the strong quantum size effect in topological heterojunctions yields an unexpected band alignment. The wave functions permeate each other through the attached materials, and this occurs even in 80-nm-thick heterojunctions. Furthermore, we theoretically found that one of the two major spectra obtained from the Bi surface does not represent the true surface state of Bi. This finding may overturn the previous understanding of the topological surface state of Bi.

cond-mat.mes-hall↗

arXiv2022

In-plane electronic anisotropy revealed by interlayer resistivity measurements on the iron-based superconductor parent compound CaFeAsF

Both cuprates and iron-based superconductors demonstrate nematicity, defined as the spontaneous breaking of rotational symmetry in electron systems. The nematic state can play a role in the high-transition-temperature superconductivity of these compounds. However, the microscopic mechanism responsible for the transport anisotropy in iron-based compounds remains debatable. Here, we investigate the electronic anisotropy of CaFeAsF by measuring its interlayer resistivity under magnetic fields with varying field directions. Counterintuitively, the interlayer resistivity was larger in the longitudinal configuration ($B \parallel I \parallel c$) than in the transverse one ($B \perp I \parallel c$). The interlayer resistivity exhibited a so-called coherence peak under in-plane fields and was highly anisotropic with respect to the in-plane field direction. At $T$ = 4 K and $B$ = 14 T, the magnetoresistance $Δρ/ρ_0$ was seven times larger in the $B \parallel b_o$ than in the $B \parallel a_o$ configuration. Our theoretical calculations of the conductivity based on the first-principles electronic band structure qualitatively reproduced the above observations but underestimated the magnitudes of the observed features. The proposed methodology can be a powerful tool for probing the nematic electronic state in various materials.

cond-mat.supr-con↗

arXiv2022

Observation of gigantic spin conversion anisotropy in bismuth

Whilst the g-factor can be anisotropic due to the spin-orbit interaction (SOI), its existence in solids cannot be simply asserted from a band structure, which hinders progress on studies from such the viewpoints. The g-factor in bismuth (Bi) is largely anisotropic; especially for holes at T-point, the g-factor perpendicular to the trigonal axis is negligibly small (< 0.112), whereas the g-factor along the trigonal axis is very large (62.7). We clarified in this work that the large g- factor anisotropy gives rise to the gigantic spin conversion anisotropy in Bi from experimental and theoretical approaches. Spin-torque ferromagnetic resonance was applied to estimate the spin conversion efficiency in rhombohedral (110) Bi to be 17%, which is unlike the negligibly small efficiency in Bi(111). Harmonic Hall measurements supports the large spin conversion efficiency in Bi(110). This is the first observation of gigantic spin conversion anisotropy as the clear manifestation of the g-factor anisotropy. Beyond the emblematic case of Bi, our study unveiled the significance of the g-factor anisotropy in condensed-matter physics and can pave a pathway toward establishing novel spin physics under g-factor control.

cond-mat.mtrl-sci↗

arXiv2021

Boundary conductance in macroscopic bismuth crystals

The interface between a solid and vacuum can become electronically distinct from the bulk. This feature, encountered in the case of quantum Hall effect, has a manifestation in insulators with topologically protected metallic surface states. Non-trivial Berry curvature of the Bloch waves or periodically driven perturbation are known to generate it. Here, by studying the angle-dependent magnetoresistance in prismatic bismuth crystals of different shapes, we detect a robust surface contribution to electric conductivity when the magnetic field is aligned parallel to a two-dimensional boundary between the three-dimensional crystal and vacuum. The effect is absent in antimony, which has an identical crystal symmetry, a similar Fermi surface structure and equally ballistic carriers, but an inverted band symmetry and a topological invariant of opposite sign. Our observation confirms that the boundary interrupting the cyclotron orbits remains metallic in bismuth, which is in agreement with what was predicted by Azbel decades ago. However, the absence of the effect in antimony indicates an intimate link between band symmetry and this boundary conductance.

cond-mat.mes-hall↗

arXiv2021

Negative magnetoresistance and sign change of the planar Hall effect due to the negative off-diagonal effective-mass in Weyl semimetals

We theoretically investigated the magnetoresistance (MR) and planar Hall effect (PHE) in Weyl semimetals based on the semiclassical Boltzmann theory, focusing on the fine structure of the band dispersion. We identified that the negative longitudinal MR and sign change in the PHE occur because of the negative off-diagonal effective-mass with no topological effects or chiral anomaly physics. Our results highlight the crucial role of the off-diagonal effective-mass, which can cause anomalous galvanomagnetic effects. We propose that the PHE creates a dip in their temperature dependence, which enables the experimental detection of the Weyl point.

cond-mat.mes-hall↗

arXiv2021

Nanometric Turing Patterns: Morphogenesis of a Bismuth Monolayer

Turing's reaction-diffusion theory of morphogenesis has been very successful in understanding macroscopic patterns within complex objects ranging from biological systems to sand dunes. However, this mechanism was never tested against patterns that emerge at the atomic scale, where the basic ingredients are subject to constraints imposed by quantum mechanics. Here we report evidence of a Turing pattern that appears in a strained atomic bismuth monolayer assembling on the surface of NbSe$_2$ subject to interatomic interactions and respective kinetics. The narrow range of microscopic parameters reflected in numerical analysis that observe stripe patterns and domain walls with Y-shaped junctions is a direct consequence of the quantum-mechanically allowed bond-lengths and bond-angles. This is therefore the first demonstration of a dynamically formed Turing pattern at the atomic scale.

cond-mat.mes-hall↗

arXiv2021

Quasi-isotropic orbital magnetoresistance in lightly doped SrTiO$_{3}$

A magnetic field parallel to an electrical current does not produce a Lorentz force on the charge carriers. Therefore, orbital longitudinal magnetoresistance is unexpected. Here we report on the observation of a large and non saturating magnetoresistance in lightly doped SrTiO$_{3-x}$ independent of the relative orientation of current and magnetic field. We show that this quasi-isotropic magnetoresistance can be explained if the carrier mobility along all orientations smoothly decreases with magnetic field. This anomalous regime is restricted to low concentrations when the dipolar correlation length is longer than the distance between carriers. We identify cyclotron motion of electrons in a potential landscape tailored by polar domains as the cradle of quasi-isotropic orbital magnetoresistance. The result emerges as a challenge to theory and may be a generic feature of lightly-doped quantum paralectric materials.

cond-mat.mtrl-sci↗