arXiv subjects

Yukiharu Takeda

Publications and source records attributed to Yukiharu Takeda.

At least 19 recordsLinked to original sources

arXiv2025

Magnetic anisotropy related to hybridization between Fe 3$d$ and As 4$p$ orbitals in a bcc Fe-As thin film

The magnetic anisotropy (MA) of Fe-based ferromagnetic thin films has been extensively studied for device applications. The examined material is a new Fe-based ferromagnetic thin film, bcc Fe$_{1-x}$As$_x$ (Fe-As) with the in-plane MA (IMA) grown on a GaAs (111)B substrate. The magnetic properties of the Fe-As thin film have been investigated by Xray magnetic circular dichroism (XMCD) and magnetic circular dichroism in hard X-ray photoemission spectroscopy (MCD-HAXPES) to elucidate the role of As ions in the IMA. The XMCD spectra at the Fe $L_{2,3}$ edge and MCD-HAXPES spectra of the Fe 2$p$ core level exhibit ferromagnetic and metallic features like Fe metal. The XMCD at the As $L_{2,3}$ edge demonstrates that the As ions contribute to the ferromagnetism of bcc Fe-As through the hybridization between the Fe 3$d$ and As 4$p$ orbitals. The estimations of the magnetic moments of Fe using the XMCD sum rules have revealed that the orbital magnetic moment is isotropic and the magnetic dipole term is anisotropic. The anisotropy of the magnetic dipole term can be attributed to the anisotropic $p-d$ hybridization due to epitaxial strain, contributing to the IMA of bcc Fe-As. Our findings enlighten the mechanism of the MA of the non-magnetic ion-doped bcc Fe thin film, which can be applied to other magnetic 3$d$ transition metal thin films doped with non-magnetic elements.

cond-mat.mtrl-sci↗

arXiv2024

Correlated Ligand Electrons in the Transition-Metal Oxide SrRuO$_3$

In transition-metal compounds, the transition-metal d electrons play an important role in their physical properties; however, the effects of the electron correlation between the ligand p electrons have not been clear yet. In this Letter, the Ru 4d and O 2p partial density of states (PDOS) in transition-metal oxide SrRuO$_3$ involving Weyl fermions are investigated by resonant photoemission spectroscopy. The observations demonstrate that the O 2p PDOS is distorted from that predicted by first-principles calculations than the Ru 4d PDOS. The results indicate that the electron correlation in the ligand orbitals will be important to understand the electronic structure of the p-d hybridized state in strongly correlated electron systems, even with topological states.

cond-mat.str-el↗

arXiv2023

Impact of the Ce $4f$ states in the electronic structure of the intermediate-valence superconductor CeIr$_3$

The electronic structure of the $f$-based superconductor $\mathrm{CeIr_3}$ was studied by photoelectron spectroscopy. The energy distribution of the $\mathrm{Ce}~4f$ states were revealed by the $\mathrm{Ce}~3d-4f$ resonant photoelectron spectroscopy. The $\mathrm{Ce}~4f$ states were mostly distributed in the vicinity of the Fermi energy, suggesting the itinerant character of the $\mathrm{Ce}~4f$ states. The contribution of the $\mathrm{Ce}~4f$ states to the density of states (DOS) at the Fermi energy was estimated to be nearly half of that of the $\mathrm{Ir}~5d$ states, implying that the $\mathrm{Ce}~4f$ states have a considerable contribution to the DOS at the Fermi energy. The $\mathrm{Ce}~3d$ core-level and $\mathrm{Ce}~3d$ X-ray absorption spectra were analyzed based on a single-impurity Anderson model. The number of the $\mathrm{Ce}~4f$ states in the ground state was estimated to be $0.8-0.9$, which is much larger than the values obtained in the previous studies (i.e., $0-0.4$).

cond-mat.str-el↗

arXiv2022

Isotropic orbital magnetic moments in magnetically anisotropic SrRuO3 films

Epitaxially strained SrRuO3 films have been a model system for understanding the magnetic anisotropy in metallic oxides. In this paper, we investigate the anisotropy of the Ru 4d and O 2p electronic structure and magnetic properties using high-quality epitaxially strained (compressive and tensile) SrRuO3 films grown by machine-learning-assisted molecular beam epitaxy. The element-specific magnetic properties and the hybridization between the Ru 4d and O 2p orbitals were characterized by Ru M2,3-edge and O K-edge soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements. The magnetization curves for the Ru 4d and O 2p magnetic moments are identical, irrespective of the strain type, indicating the strong magnetic coupling between the Ru and O ions. The electronic structure and the orbital magnetic moment relative to the spin magnetic moment are isotropic despite the perpendicular and in-plane magnetic anisotropy in the compressive-strained and tensile-strained SrRuO3 films; i.e., the orbital magnetic moments have a negligibly small contribution to the magnetic anisotropy. This result contradicts Bruno model, where magnetic anisotropy arises from the difference in the orbital magnetic moment between the perpendicular and in-plane directions. Contributions of strain-induced electric quadrupole moments to the magnetic anisotropy are discussed, too.

cond-mat.str-el↗

arXiv2022

Electronic Structure of ThPd$_2$Al$_3$: an impact of the U $5f$ states in the electronic structure of UPd$_2$Al$_3$

The electronic structure of ThPd$_2$Al$_3$, which is isostructural to the heavy fermion superconductor UPd$_2$Al$_3$, was investigated by photoelectron spectroscopy. The band structure and Fermi surfaces of ThPd$_2$Al$_3$ were obtained by angle-resolved photoelectron spectroscopy (ARPES), and the results were well-explained by the band-structure calculation based on the local density approximation. The comparison between the ARPES spectra and the band-structure calculation suggests that the Fermi surface of ThPd$_2$Al$_3$ mainly consists of the Al $3p$ and Th $6d$ states with a minor contribution from the Pd $4d$ states. The comparison of the band structures between ThPd$_2$Al$_3$ and UPd$_2$Al$_3$ argues that the U $5f$ states form Fermi surfaces in UPd$_2$Al$_3$ through hybridization with the Al $3p$ state in the Al layer, suggesting that the Fermi surface of UPd$_2$Al$_3$ has a strong three-dimensional nature.

cond-mat.str-el↗

arXiv2022

Magnetoelastic anisotropy in Heusler-type Mn$_{2-δ}$CoGa$_{1+δ}$ films

Perpendicular magnetization is essential for high-density memory application using magnetic materials. High-spin polarization of conduction electrons is also required for realizing large electric signals from spin-dependent transport phenomena. Heusler alloy is a well-known material class showing the half-metallic electronic structure. However, its cubic lattice nature favors in-plane magnetization and thus minimizes the perpendicular magnetic anisotropy (PMA), in general. This study focuses on an inverse-type Heusler alloy, Mn$_{2-δ}$CoGa$_{1+δ}$ (MCG) with a small off-stoichiometry ($δ$) , which is expected to be a half-metallic material. We observed relatively large uniaxial magnetocrystalline anisotropy constant ($K_\mathrm{u}$) of the order of 10$^5$ J/m$^3$ at room temperature in MCG films with a small tetragonal distortion of a few percent. A positive correlation was confirmed between the $c/a$ ratio of lattice constants and $K_\mathrm{u}$. Imaging of magnetic domains using Kerr microscopy clearly demonstrated a change in the domain patterns along with $K_\mathrm{u}$. X-ray magnetic circular dichroism (XMCD) was employed using synchrotron radiation soft x-ray beam to get insight into the origin for PMA. Negligible angular variation of orbital magnetic moment ($Δm_\mathrm{orb}$) evaluated using the XMCD spectra suggested a minor role of the so-called Bruno's term to $K_\mathrm{u}$. Our first principles calculation reasonably explained the small $Δm_\mathrm{orb}$ and the positive correlation between the $c/a$ ratio and $K_\mathrm{u}$. The origin of the magnetocrystalline anisotropy was discussed based on the second-order perturbation theory in terms of the spin--orbit coupling, claiming that the mixing of the occupied $\uparrow$- and the unoccupied $\downarrow$-spin states is responsible for the PMA of the MCG films.

cond-mat.mtrl-sci↗

arXiv2022

Ferromagnetism induced by hybridization of Fe 3d orbitals with ligand InSb bands in n-type ferromagnetic semiconductor (In,Fe)Sb

Fe-doped III-V ferromagnetic semiconductor (FMS) (In,Fe)Sb is a promising material for spintronic device applications because of the n-type carrier conduction and the ferromagnetism with high Curie temperature (TC > 300 K). To clarify the mechanism of the high-TC ferromagnetism, we have investigated the electronic structure and magnetic properties of an (In,Fe)Sb thin film by performing x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements at the Fe L2,3 edges. The magnetic-field dependence of the XMCD spectra reveals that there are ferromagnetic-like Fe and paramagnetic-like Fe components in the (In,Fe)Sb thin film. The XAS and XMCD spectra of the ferromagnetic-like and paramagnetic-like Fe components resemble those of other Fe-doped FMSs and extrinsic oxides, respectively. The finite value of the ratio between the orbital and spin magnetic moments estimated by applying the XMCD sum rules indicates that the valence state of the Fe ions substituting for the In sites in (In,Fe)Sb is not purely ionic Fe3+, but intermediate between Fe3+ and Fe2+. The qualitative correspondence between the magnetic-field dependence of the visible-light magnetic circular dichroism intensity and that of the XMCD intensity demonstrates that the Zeeman splitting of the InSb band is proportional to the net magnetization of the doped Fe. These results suggest that the ferromagnetism of (In,Fe)Sb originates from the Fe 3d orbitals hybridized with the host InSb bands.

cond-mat.mtrl-sci↗

arXiv2021

Development of magnetism in Fe-doped magnetic semiconductors: Resonant photoemission and x-ray magnetic circular dichroism studies of (Ga,Fe)As

Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability of both n- and p-type materials and the high Curie temperatures. On the other hand, (Ga,Fe)As, which has the same zinc-blende crystal structure as the Fe-doped III-V FMSs, shows paramagnetism. The origin of the different magnetic properties in the Fe-doped III-V semiconductors remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and x-ray magnetic circular dichroism (XMCD) to investigate the electronic and magnetic properties of the Fe ions in a paramagnetic (Ga$_{0.95}$,Fe$_{0.05}$)As thin film. The observed Fe 2$p$-3$d$ RPES spectra show that the Fe 3$d$ states are similar to those of ferromagnetic (Ga,Fe)Sb. The estimated Fermi level is located in the middle of the band gap in (Ga,Fe)As. The Fe $L_{2,3}$ XMCD spectra of (Ga$_{0.95}$,Fe$_{0.05}$)As show pre-edge structures, which are not observed in the Fe-doped FMSs, indicating that the minority-spin ($\downarrow$) $e_\downarrow$ states are vacant in (Ga$_{0.95}$,Fe$_{0.05}$)As. The XMCD results suggest that the carrier-induced ferromagnetic interaction in (Ga$_{0.95}$,Fe$_{0.05}$)As is short-ranged and weaker than that in the Fe-doped FMSs. The experimental findings suggest that the electron occupancy of the $e_\downarrow$ states contributes to the appearance of ferromagnetism in the Fe-doped III-V semiconductors, for p-type as well as n-type compounds.

cond-mat.mtrl-sci↗

arXiv2021

Single-domain perpendicular magnetization induced by the coherent O 2p-Ru 4d hybridized state in an ultra-high-quality SrRuO3 film

We investigated the Ru 4d and O 2p electronic structure and magnetic properties of an ultra-high-quality SrRuO3 film on SrTiO3 grown by machine-learning-assisted molecular beam epitaxy. The high itinerancy and long quantum lifetimes of the quasiparticles in the Ru 4d t2g-O 2p hybridized valence band are confirmed by observing the prominent well-screened peak in the Ru 3d core-level photoemission spectrum, the coherent peak near the Fermi energy in the valence band spectrum, and quantum oscillations in the resistivity. The element-specific magnetic properties and the hybridization between the Ru 4d and O 2p orbitals were characterized by Ru M2,3-edge and O K-edge soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements. The ultra-high-quality SrRuO3 film with the residual resistivity ratio of 86 shows the large orbital magnetic moment of oxygen ions induced by the strong orbital hybridization of the O 2p states with the spin-polarized Ru 4d t2g states. The film also shows single-domain perpendicular magnetization with an almost ideal remanent magnetization ratio of 0.97. These results provide detailed insights into the relevance between orbital hybridization and the perpendicular magnetic anisotropy in SrRuO3/SrTiO3 systems.

cond-mat.mtrl-sci↗

arXiv2021

Electronic structure of URu$_2$Si$_2$ in paramagnetic phase: Three-dimensional angle resolved photoelectron spectroscopy study

The three-dimensional (3D) electronic structure of the hidden order compound URu$_2$Si$_2$ in a paramagnetic phase was revealed using a 3D angle-resolved photoelectron spectroscopy where the electronic structure of the entire Brillouin zone is obtained by scanning both incident photon energy and detection angles of photoelectrons. The quasi-particle bands with enhanced contribution from the $\mathrm{U}~5f$ state were observed near $E_\mathrm{F}$, formed by the hybridization with the $\mathrm{Ru}~4d$ states. The energy dispersion of the quasi-particle band is significantly depend on $k_z$, indicating that they inherently have a 3D nature. The band-structure calculation qualitatively explain the characteristic features of the band structure and Fermi surface although the electron correlation effect strongly renormalizes the quasi-particle bands. The 3D and strongly-correlated nature of the quasi-particle bands in URu$_2$Si$_2$ is an essential ingredient for modeling its hidden-order transition.

cond-mat.str-el↗

arXiv2020

Core-Level Photoelectron Spectroscopy Study of UTe$_2$

The valence state of UTe$_2$ was studied by core-level photoelectron spectroscopy. The main peak position of the U $4f$ core-level spectrum of UTe$_2$ coincides with that of UB$_2$, which is an itinerant compound with a nearly $5f^3$ configuration. However, the main peak of UTe$_2$ is broader than that of UB$_2$, and satellite structures are observed in the higher binding energy side of the main peak, which are characteristics of mixed-valence uranium compounds. These results suggest that the U 5$f$ state in UTe$_2$ is in a mixed valence state with a dominant contribution from the itinerant $5f^3$ configuration.

cond-mat.str-el↗

arXiv2020

Alternation of Magnetic Anisotropy Accompanied by Metal-Insulator Transition in Strained Ultrathin Manganite Heterostructures

Fundamental understanding of interfacial magnetic properties in ferromagnetic heterostructures is essential to utilize ferromagnetic materials for spintronic device applications. In this paper, we investigate the interfacial magnetic and electronic structures of epitaxial single-crystalline LaAlO$_3$ (LAO)/La$_{0.6}$Sr$_{0.4}$MnO$_3$ (LSMO)/Nb:SrTiO$_3$ (Nb:STO) heterostructures with varying LSMO-layer thickness, in which the magnetic anisotropy strongly changes depending on the LSMO thickness due to the delicate balance between the strains originating from both the Nb:STO and LAO layers, using x-ray magnetic circular dichroism (XMCD) and photoemission spectroscopy (PES). We successfully detect the clear change of the magnetic behavior of the Mn ions concomitant with the thickness-dependent metal-insulator transition (MIT). Our results suggest that double-exchange interaction induces the ferromagnetism in the metallic LSMO film under tensile strain caused by the SrTiO$_3$ substrate, while superexchange interaction determines the magnetic behavior in the insulating LSMO film under compressive strain originating from the top LAO layer. Based on those findings, the formation of a magnetic dead layer near the LAO/LSMO interface is attributed to competition between the superexchange interaction via Mn 3$d_{3z^2-r^2}$ orbitals under compressive strain and the double-exchange interaction via the 3$d_{x^2-y^2}$ orbitals.

cond-mat.mtrl-sci↗

arXiv2020

Evolution of the Fe-3$d$ impurity band state as the origin of high Curie temperature in p-type ferromagnetic semiconductor (Ga,Fe)Sb

(Ga$_{1-x}$,Fe$_x$)Sb is one of the promising ferromagnetic semiconductors for spintronic device applications because its Curie temperature ($T_{\rm C}$) is above 300 K when the Fe concentration $x$ is equal to or higher than ~0.20. However, the origin of the high $T_{\rm C}$ in (Ga,Fe)Sb remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and first-principles calculations to investigate the $x$ dependence of the Fe 3$d$ states in (Ga$_{1-x}$,Fe$_x$)Sb ($x$ = 0.05, 0.15, and 0.25) thin films. The observed Fe 2$p$-3$d$ RPES spectra reveal that the Fe-3$d$ impurity band (IB) crossing the Fermi level becomes broader with increasing $x$, which is qualitatively consistent with the picture of double-exchange interaction. Comparison between the obtained Fe-3$d$ partial density of states and the first-principles calculations suggests that the Fe-3$d$ IB originates from the minority-spin ($\downarrow$) $e$ states. The results indicate that enhancement of the interaction between $e_\downarrow$ electrons with increasing $x$ is the origin of the high $T_{\rm C}$ in (Ga,Fe)Sb.

cond-mat.mtrl-sci↗

arXiv2020

Hybridization between the ligand $p$ band and Fe-3$d$ orbitals in the p-type ferromagnetic semiconductor (Ga,Fe)Sb

(Ga,Fe)Sb is a promising ferromagnetic semiconductor for practical spintronic device applications because its Curie temperature ($T_{\rm C}$) is above room temperature. However, the origin of ferromagnetism with high $T_{\rm C}$ remains to be elucidated. Here, we use soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to investigate the valence-band (VB) structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb including the Fe-3$d$ impurity band (IB), to unveil the mechanism of ferromagnetism in (Ga,Fe)Sb. We find that the VB dispersion in (Ga$_{0.95}$,Fe$_{0.05}$)Sb observed by SX-ARPES is similar to that of GaSb, indicating that the doped Fe atoms hardly affect the band dispersion. The Fe-3$d$ resonant ARPES spectra demonstrate that the Fe-3$d$ IB crosses the Fermi level ($E_{\rm F}$) and hybridizes with the VB of GaSb. These observations indicate that the VB structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb is consistent with that of the IB model which is based on double-exchange interaction between the localized 3$d$ electrons of the magnetic impurities. The results indicate that the ferromagnetism in (Ga,Fe)Sb is formed by the hybridization of the Fe-3$d$ IB with the ligand $p$ band of GaSb.

cond-mat.mtrl-sci↗

arXiv2019

Intrinsic 2D Ferromagnetism in V5Se8 Epitaxial Thin Films

The discoveries of intrinsic ferromagnetism in atomically-thin van der Waals crystals have opened up a new research field enabling fundamental studies on magnetism at two-dimensional (2D) limit as well as development of magnetic van der Waals heterostructures. To date, a variety of 2D ferromagnetism has been explored mainly by mechanically exfoliating 'originally ferromagnetic (FM)' van der Waals crystals, while bottom-up approach by thin film growth technique has demonstrated emergent 2D ferromagnetism in a variety of 'originally non-FM' van der Waals materials. Here we demonstrate that V5Se8 epitaxial thin films grown by molecular-beam epitaxy (MBE) exhibit emergent 2D ferromagnetism with intrinsic spin polarization of the V 3d electrons despite that the bulk counterpart is 'originally antiferromagnetic (AFM)'. Moreover, thickness-dependence measurements reveal that this newly-developed 2D ferromagnet could be classified as an itinerant 2D Heisenberg ferromagnet with weak magnetic anisotropy, broadening a lineup of 2D magnets to those potentially beneficial for future spintronics applications.

cond-mat.mtrl-sci↗

arXiv2019

Electronic Structure of UTe$_2$ Studied by Photoelectron Spectroscopy

The electronic structure of the unconventional superconductor UTe$_2$ was studied by resonant photoelectron spectroscopy (RPES) and angle-resolved photoelectron spectroscopy (ARPES) with soft X-ray synchrotron radiation. The partial $\mathrm{U}~5f$ density of states of UTe$_2$ were imaged by the $\mathrm{U}~4d$--$5f$ RPES and it was found that the $\mathrm{U}~5f$ state has an itinerant character, but there exists an incoherent peak due to the strong electron correlation effects. Furthermore, an anomalous admixture of the $\mathrm{U}~5f$ states into the $\mathrm{Te}~5p$ bands was observed at a higher binding energy, which cannot be explained by band structure calculations. On the other hand, the band structure of UTe$_2$ was obtained by ARPES and its overall band structure were mostly explained by band structure calculations. These results suggest that the $\mathrm{U}~5f$ states of UTe$_2$ have itinerant but strongly-correlated nature with enhanced hybridization with the $\mathrm{Te}~5p$ states.

cond-mat.str-el↗

arXiv2019

Magnetization process of the insulating ferromagnetic semiconductor (Al,Fe)Sb

We have studied the magnetization process of the new insulating ferromagnetic semiconductor (Al,Fe)Sb by means of x-ray magnetic circular dichroism. For an optimally doped sample with 10% Fe, a magnetization was found to rapidly increase at low magnetic fields and to saturate at high magnetic fields at room temperature, well above the Curie temperature of 40 K. We attribute this behavior to the existence of nanoscale Fe-rich ferromagnetic domains acting as superparamagnets. By fitting the magnetization curves using the Langevin function representing superparamagnetism plus the paramagnetic linear function, we estimated the average magnetic moment of the nanoscale ferromagnetic domain to be 300-400 $μ_{B}$, and the fraction of Fe atoms participating in the nano-scale ferromagnetism to be $\sim$50%. Such behavior was also reported for (In,Fe)As:Be and Ge:Fe, and seems to be a universal characteristic of the Fe-doped ferromagnetic semiconductors. Further Fe doping up to 14% led to the weakening of the ferromagnetism probably because antiferromagnetic superexchange interaction between nearest-neighbor Fe-Fe pairs becomes dominant.

cond-mat.str-el↗

arXiv2019

Manifestation of electron correlation effect in $\mathrm{U}~5f$ states of uranium compounds revealed by $\mathrm{U}~4d-5f$ resonant photoemission spectroscopy

We have elucidated the nature of the electron correlation effect in uranium compounds by imaging the partial $\mathrm{U}~5f$ density of states (pDOS) of typical itinerant, localized, and heavy fermion uranium compounds by using the $\mathrm{U}~4d-5f$ resonant photoemission spectroscopy. Obtained $\mathrm{U}~5f$ pDOS exhibit a systematic trend depending on the physical properties of compounds. The coherent peak at the Fermi level can be described by the band-structure calculation, but an incoherent peak emerges on the higher binding energy side ($\lesssim 1~\mathrm{eV}$) in the \Uf pDOS of localized and heavy fermion compounds. As the $\mathrm{U}~5f$ state is more localized, the intensity of the incoherent peak is enhanced and its energy position is shifted to higher binding energy. These behaviors are consistent with the prediction of the Mott metal-insulator transition, suggesting that the Hubbard-$U$ type mechanism takes an essential role in the $5f$ electronic structure of actinide materials.

cond-mat.str-el↗