arXiv subjects

Yukinori Yoshimura

Publications and source records attributed to Yukinori Yoshimura.

10 recordsLinked to original sources

arXiv2021

Gapless States Localized along a Staircase Edge in Second-Order Topological Insulators

A second-order topological insulator on a two-dimensional square lattice hosts zero-dimensional states inside a band gap. They are localized near $90^{\circ}$ and $270^{\circ}$ corners constituting an edge of the system. When the edge is in a staircase form consisting of these two corners, two families of edge states (i.e., one-dimensional states localized near the edge) appear as a result of the hybridization of zero-dimensional states. We identify symmetry that makes them gapless. We also show that a pair of nontrivial winding numbers associated with this symmetry guarantee a gapless spectrum of edge states, indicating that bulk--boundary correspondence holds in this topological insulator with a staircase edge.

cond-mat.mes-hall↗

arXiv2017

Bulk-edge correspondence in topological transport and pumping

The bulk-edge correspondence (BEC) refers to a one-to-one relation between the bulk and edge properties ubiquitous in topologically nontrivial systems. Depending on the setup, BEC manifests in different forms and govern the spectral and transport properties of topological insulators and semimetals. Although the topological pump is theoretically old, BEC in the pump has been established just recently [1] motivated by the state-of-the-art experiments using cold atoms [2,3]. The center of mass (CM) of a system with boundaries shows a sequence of quantized jumps in the adiabatic limit associated with the edge states. Although the bulk is adiabatic, the edge is inevitably non-adiabatic in the experimental setup or in any numerical simulations. Still the pumped charge is quantized and carried by the bulk. Its quantization is guaranteed by a compensation between the bulk and edges. We show that in the presence of disorder the pumped charge continues to be quantized despite the appearance of non-quantized jumps.

cond-mat.mes-hall↗

arXiv2016

Comparative study of Weyl semimetal, topological and Chern insulators: thin-film point of view

Regarding three-dimensional (3D) topological insulators and semimetals as a stack of constituent 2D topological (or sometimes non-topological) layers is a useful viewpoint. Primarily, concrete theoretical models of the paradigmatic 3D topological phases such as Weyl semimetal (WSM), strong and weak topological insulators (STI/WTI), and Chern insulator (CI), are often constructed in that way. Secondarily, fabrication of the corresponding 3D topological material is also done in the same spirit; epitaxial growth technique is employed, making the resulting sample in the form of a thin film. Here, in this paper we calculate $\mathbb{Z}$- and $\mathbb{Z}_2$-indices and study evolution of the topological properties of such thin films of 3D topological systems, making also a comparative study of CI- vs. TI-type models belonging to different symmetry classes in this respect. Through this comparative study we suggest that WSM is to CI as STI is to WTI. Finally, to test the robustness of our scenario against disorder and relevance to experiments we have also studied numerically the two-terminal conductance of the system using transfer matrix method.

cond-mat.mes-hall↗

arXiv2015

Dimensional crossover of transport characteristics in topological insulator nanofilms

We show how the two-dimensional (2D) topological insulator evolves, by stacking, into a strong or weak topological insulator with different topological indices, proposing a new conjecture that goes beyond an intuitive picture of the crossover from quantum spin Hall to the weak topological insulator. Studying the conductance under different boundary conditions, we demonstrate the existence of two conduction regimes in which conduction happens through either surface- or edge-conduction channels. We show that the two conduction regimes are complementary and exclusive. Conductance maps in the presence and absence of disorder are introduced, together with 2D $\mathbb{Z}_2$-index maps, describing the dimensional crossover of the conductance from the 2D to the 3D limit. Stacking layers is an effective way to invert the gap, an alternative to controlling the strength of spin-orbit coupling. The emerging quantum spin Hall insulator phase is not restricted to the case of odd numbers of layers.

cond-mat.mes-hall↗

arXiv2015

Manipulating quantum channels in weak topological insulator nanoarchitectures

In $strong$ topological insulators protected surface states are always manifest, while in $weak$ topological insulators (WTI) the corresponding metallic surface states are either manifest or hidden, depending on the orientation of the surface. One can design a nanostep on the surface of WTI such that a protected helical channel appears along it. In a more generic WTI nanostructure, multiple sets of such quasi-1D channels emerge and are coupled to each other. We study the response of the electronic spectrum associated with such quasi-1D surface modes against a magnetic flux piercing the system in the presence of disorder, and find a non-trivial, connected spectral flow as a clear signature indicating the immunity of the surface modes to disorder. We propose that the WTI nanoarchitecture is a promising platform for realizing topologically protected nanocircuits immune to disorder.

cond-mat.mes-hall↗

arXiv2014

Engineering Dirac electrons emergent on the surface of a topological insulator

The concept of topological insulator (TI) has introduced a new point of view to condensed-matter physics, relating a priori unrelated subfields such as quantum (spin, anomalous) Hall effects, spin-orbit coupled materials, some classes of nodal superconductors and superfluid $^3$He, etc. From a technological point of view, topological insulator is expected to serve as a platform for realizing dissipationless transport in a non-superconducting context. The topological insulator exhibits a gapless surface state with a characteristic conic dispersion (a surface Dirac cone). Here, we review peculiar finite-size effects applicable to such surface states in TI nanostructures. We highlight the specific electronic properties of TI nanowires and nanoparticles, and in this context contrast the cases of weak and strong TIs. We study robustness of the surface and the bulk of TIs against disorder, addressing the physics of Dirac and Weyl semimetals as a new perspective of research in the field.

cond-mat.mes-hall↗

arXiv2014

Characterizing the weak topological properties: Berry phase point of view

We propose classification schemes for characterizing two-dimensional topological phases with nontrivial weak indices. Here, "weak" implies that the Chern number in the corresponding phase is trivial, while the system shows edge states along specific boundaries. As concrete examples, we analyze different versions of the so-called Wilson-Dirac model with (i) anisotropic Wilson terms, (ii) next nearest neighbor hopping terms, and (iii) a superlattice generalization of the model, here in the tight-binding implementation. For types (i) and (ii) a graphic classification of strong properties is successfully generalized for classifying weak properties. As for type (iii), weak properties are attributed to quantized Berry phase pi along a Wilson loop.

cond-mat.mes-hall↗

arXiv2013

Perfectly conducting channel on the dark surface of weak topological insulators

A weak topological insulator (WTI) bears, generally, an even number of Dirac cones on its surface; they are susceptible of doubling, while on the surface of a certain orientation it shows no Dirac cone. On this "dark" surface of a WTI, we predict the existence of a single pair of isolated 1D perfectly conducting channels that forms either a closed loop or a segment of a line. The former is associated typically with a single atomic-layer-thick island formed on the dark surface, while the latter is shown to be the consequence of a pair of crystal (screw) dislocations terminating on the dark surface.

cond-mat.mes-hall↗

arXiv2012

Spherical topological insulator

The electronic spectrum on the spherical surface of a topological insulator reflects an active property of the helical surface state that stems from a constraint on its spin on a curved surface. The induced effective vector potential (spin connection) can be interpreted as an effective vector potential associated with a fictitious magnetic monopole induced at the center of the sphere. The strength of the induced magnetic monopole is found to be g=2pi, -2pi, being the smallest finite (absolute) value compatible with the Dirac quantization condition. We have established an explicit correspondence between the bulk Hamiltonian and the effective Dirac operator on the curved spherical surface. An explicit construction of the surface spinor wave functions implies a rich spin texture possibly realized on the surface of topological insulator nanoparticles. The electronic spectrum inferred by the obtained effective surface Dirac theory, confirmed also by the bulk tight-binding calculation, suggests a specific photo absorption/emission spectrum of such nanoparticles.

cond-mat.mes-hall↗

arXiv2012

Finite-size energy gap in weak and strong topological insulators

The non-trivialness of a topological insulator (TI) is characterized either by a bulk topological invariant or by the existence of a protected metallic surface state. Yet, in realistic samples of finite size this non-trivialness does not necessarily guarantee the gaplessness of the surface state. Depending on the geometry and on the topological indices, a finite-size energy gap of different nature can appear, and correspondingly, exhibits various scaling behaviors of the gap. The spin-to-surface locking provides one of such gap-opening mechanisms, resulting in a power-law scaling of the energy gap. Weak and strong TI's show different degrees of sensitivity to the geometry of the sample. As a noteworthy example, a strong TI nanowire of a rectangular prism shape is shown to be more gapped than that of a weak TI of precisely the same geometry.

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