arXiv subjects

Yulei Han

Publications and source records attributed to Yulei Han.

At least 19 recordsLinked to original sources

arXiv2026

Quantum Anomalous Hall Effect in $d^{10}$ Oxide Monolayers

Quantum anomalous Hall effect (QAHE) arises from the interplay between magnetic order and spin-orbit coupling, which opens up a topologically nontrivial band gap to host chiral edge states in the absence of magnetic field. So far, magnetic order of QAHE usually originates from partially filled transition-metal $d$ orbitals or correlation-driven moir\'e bands. Here, we propose an experimentally accessible family of two-dimensional oxides, M$_2$DO$_6$ (M = Zn, Cd; D = Se, Te), that can realize QAHE from the half-filled O-$2p$ orbital induced spontaneous ferromagnetism. In M$_2$DO$_6$ monolayers, spin-polarized Dirac points appear at K/K$^{\prime}$ valleys and along $\Gamma$-K/$\Gamma$-K$^{\prime}$ lines. $C_3$ rotational symmetry then generates eight symmetry-related crossings in the first Brillouin zone. Upon gap opening by spin-orbit coupling, each massive Dirac point contributes half Chern number, resulting in a high-Chern-number QAHE phase with $\mathcal{C}=4$. We establish cation deintercalation as a general strategy to activate O-$2p$ ferromagnetism in oxides. Our finding provides a route to realize QAHE from O-$2p$ ferromagnetism and offers design principles applicable to oxygen-based magnetic topology platforms beyond conventional $d$-electron systems.

cond-mat.mes-hall↗

arXiv2025

Electronic-correlation-assisted charge stripe order in a Kagome superconductor

A central mystery in high-temperature cuprate superconductors is the coexistence of multiple exotic orders, which is presumably associated with strong electronic correlation. The ongoing interest in this enigmatic phenomenon is further energized when similar electronic orders and states emerge and coexist in less correlated Kagome superconductors. Here, by utilizing angle-resolved photoemission spectroscopy (ARPES), nuclear magnetic resonance (NMR) spectroscopy, scanning tunneling microscopy (STM) and first-principles calculations, we reveal the sudden emergence of a distinct short-range charge stripe order in Sn-doped CsV$_3$Sb$_5$ Kagome superconductors when the long-range $2 \times 2$ charge density wave order in pristine CsV$_3$Sb$_5$ is suppressed. This short-range stripe order features a modulation vector of approximately 1/3 along one of the three lattice directions, induces remarkable quasiparticle scattering between the original quasi-1D Kagome-d-bands and their replica of folding, and clearly suppresses the electron density of states at the Fermi level. Our first-principles calculations reveal that $3 \times 1$ supermodulation represents a hidden secondary instability in pristine CsV$_3$Sb$_5$. This instability is further enhanced by in-plane chemical pressure induced by Sn substitution, and coupled to the electronic correlation, leading to a unique charge stripe order in the system. As such, our results reveal a new route toward emergent electronic orders via cooperative interactions between the lattice and electronic degrees of freedom.

cond-mat.supr-con↗

arXiv2025

The Layer Hall Effect without External Electric Field

The layer Hall effect is an intriguing phenomenon observed in magnetic topological layered materials, where the Hall response arises from the opposite deflection of electrons on top and bottom layers. To realize layer Hall effect, space-time $\mathcal{PT}$ symmetry is typically broken by applying an external electric field. In this work, we propose a new mechanism to realize the layer Hall effect by introducing inequivalent exchange fields on both surfaces of a topological insulator thin film, in the absence of an electric field. This approach yields a distinct Hall response compared to the conventional electric-field-induced layer Hall effect, particularly with respect to the Fermi level. Taking the topological insulator Sb$_2$Te$_3$ as a concrete example, we demonstrate the feasibility of inducing the layer Hall effect only by coupling the top and bottom surfaces of Sb$_2$Te$_3$ with different magnetic insulators. Notably, we show that both built-in electric-field-induced and inequivalent exchange-fields-induced layer Hall effects can be achieved by tuning the stacking order between Sb$_2$Te$_3$ and the magnetic layers. Given the well-established experimental techniques for fabricating topological insulator thin films, our work offers a viable pathway for realizing layer Hall effect without external electric field.

cond-mat.mes-hall↗

arXiv2024

An ab-initio study on engineering quantum anomalous Hall effect in compensated antiferromagnet MnBi$_{2}$Te$_{4}$

Recently, the quantum anomalous Hall effect (QAHE) has been theoretically proposed in compensated antiferromagnetic systems by using the magnetic topological insulator model [see arXiv:2404.13305 (2024)]. However, the related and systematic study based on a realistic material system is still limited. As the only experimentally realized antiferromagnetic topological insulator, MnBi$_{2}$Te$_{4}$ becomes a vital platform for exploring various topological states. In this work, by using the comprehensive first-principles calculations, we demonstrate that the QAHE can also be realized in compensated antiferromagnetic even-septuple-layer MnBi$_{2}$Te$_{4}$ without combined parity-time ($\mathcal{PT}$) symmetry. Using a magnetic topological insulator model, the layer-resolved Chern number is calculated to further understand the physical origin of different Chern numbers. The application of external hydrostatic pressure can strengthen the Te-Te quasicovalent bond due to the dramatic compression of the van der Waals gap. Thus, the resulting topological nontrivial gap can exceed the room-temperature energy scale in a wide range of pressures. Additionally, we find that constructing MnBi$_{2}$Te$_{4}$/CrI$_{3}$ heterostructure can realize the compensated antiferromagnetic configurations with QAHE. Our findings illustrate the realization of QAHE in compensated antiferromagnetic even-septuple-layer MnBi$_{2}$Te$_{4}$ and provide a reliable strategy to obtain the corresponding magnetic configurations.

cond-mat.mtrl-sci↗

arXiv2024

Electric-field-tunable topological phases in valley-polarized quantum anomalous Hall systems with inequivalent exchange fields

Incorporating valley as a degree of freedom into quantum anomalous Hall systems offers a novel approach to manipulating valleytronics in electronic transport. Using the Kane-Mele monolayer as a concrete model, we comprehensively explore the various topological phases in the presence of inequivalent exchange fields and reveal the roles of the interfacial Rashba effect and external electric field in tuning topological valley-polarized states. We find that valley-polarized states can be realized by introducing Kane-Mele spin-orbit coupling and inequivalent exchange fields. Further introducing Rashba spin-orbit coupling and an electric field into the system can lead to diverse topological states, such as the valley-polarized quantum anomalous Hall effect with $\mathcal{C}=~\pm 1,\pm 2$ and valley-contrasting states with $\mathcal{C}=0$. Remarkably, different valley-polarized topological states can be continuously tuned by varying the strength and direction of the external electric field in a fixed system. Our work demonstrates the tunability of topological states in valley-polarized quantum anomalous Hall systems and provides an ideal platform for applications in electronic transport devices in topological valleytronics.

cond-mat.mes-hall↗

arXiv2024

Flat bands and distinct density wave orders in correlated Kagome superconductor CsCr$_3$Sb$_5$

Kagome metal CsV$_3$Sb$_5$ has attracted much recent attention due to the coexistence of multiple exotic orders and the associated proposals to mimic unconventional high temperature superconductors. Nevertheless, magnetism and strong electronic correlations -- two essential ingredients for unconventional superconductivity, are absent in this V-based Kagome metal. CsCr$_3$Sb$_5$ is a newly discovered Cr-based parallel of CsV$_3$Sb$_5$, in which magnetism appears with charge density wave and superconductivity at different temperature and pressure regions. Enhanced electronic correlations are also suggested by theoretical proposals due to the calculated flat bands. Here, we report angle-resolved photoemission measurements and first-principles calculations on this new material system. Electron energy bands and the associated orbitals are resolved. Flat bands are observed near the Fermi level. Doping dependent measurements on Cs(Cr$_x$V$_{1-x}$)$_3$Sb$_5$ reveal a gradually enhanced band renormalization from CsV$_3$Sb$_5$ to CsCr$_3$Sb$_5$, accompanied by distinct spatial symmetry breaking states in the phase diagram.

cond-mat.supr-con↗

arXiv2024

Two-dimensional phase diagram of the charge density wave in doped CsV$_3$Sb$_5$

Kagome superconductors AV$_3$Sb$_5$ (A = K, Rb and Cs) have attracted much recent attention due to the coexistence of multiple exotic orders. Among them, the charge density wave (CDW) order has been shown to host various unconventional behaviors. Here, we investigate the CDW order by a combination of both bulk and surface doping methods. While element substitutions in bulk doping change both carriers and the crystal lattice, the surface doping primarily tunes the carrier concentration. As such, our results reveal a two-dimensional phase diagram of the CDW in doped CsV$_3$Sb$_5$. In the lightly bulk doped regime, the existence of CDW order is reversible by tuning the carrier concentration. But excessive bulk doping permanently destroys the CDW, regardless of the carrier doping level. These results provide insights to the origin of the CDW from both electronic and structural degrees of freedom. They also open an avenue for manipulating the exotic CDW order in Kagome superconductors.

cond-mat.supr-con↗

arXiv2024

Tunning the number of chiral edge channels in a fixed quantum anomalous Hall system

Quantum anomalous Hall (QAH) insulators exhibit chiral edge channels characterized by vanishing longitudinal conductance and quantized Hall conductance of Ce2/h, wherein the Chern number C is an integer equal to the number of the parallel chiral edge channels. These chiral edge channels conduct dissipationless transport in QAH insulators, making them pivotal for applications in low-consumption electronics and topological quantum computing. While the QAH effect with multiple chiral edge channels (i.e., C >1) has been demonstrated in multilayers consisting of magnetic topological insulators and normal insulators, the channel number remains fixed for a given sample. Here, we unveil the tunability of the number of chiral edge channels within a single QAH insulator device. By tuning the magnetization of individual layers within the multilayer system, Chern insulating states with different Chern numbers are unveiled. The tunable Chern number was corroborated by our theoretical calculations. Furthermore, we conducted layer-dependent calculations to elucidate the contribution of the Chern number from different layers in the multilayer. Our findings demonstrate an extra degree of freedom in manipulating the chiral edge channels in QAH insulators. This newfound tunability offers extra dimension for the implementation of the QAH-based multi-channel dissipationless transport.

cond-mat.mes-hall↗

arXiv2023

A unique van Hove singularity in kagome superconductor CsV$_{3-x}$Ta$_x$Sb$_5$ with enhanced superconductivity

Van Hove singularity (VHS) has been considered as a driving source for unconventional superconductivity. A VHS in two-dimensional (2D) materials consists of a saddle point connecting electron-like and hole-like bands. In a rare case, when a VHS appears at Fermi level, both electron-like and hole-like conduction can coexist, giving rise to an enhanced density of states as well as an attractive component of Coulomb interaction for unconventional electronic pairing. However, this van Hove scenario is often destroyed by an incorrect chemical potential or competing instabilities. Here, by using angle-resolved photoemission measurements, we report the observation of a VHS perfectly aligned with the Fermi level in a kagome superconductor CsV$_{3-x}$Ta$_x$Sb$_5$ (x~0.4), in which a record-high superconducting transition temperature is achieved among all the current variants of AV$_3$Sb$_5$ (A=Cs, Rb, K) at ambient pressure. Doping dependent measurements reveal the important role of van Hove scenario in boosting superconductivity, and spectroscopic-imaging scanning tunneling microscopy measurements indicate a distinct superconducting state in this system.

cond-mat.supr-con↗

arXiv2022

Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials

We numerically study the general valley polarization and anomalous Hall effect in van der Waals (vdW) heterostructures based on monolayer jacutingaite family materials Pt$_{2}$AX$_{3}$ (A = Hg, Cd, Zn; X = S, Se, Te). We perform a systematic study on the atomic, electronic, and topological properties of vdW heterostructures composed of monolayer Pt$_{2}$AX$_{3}$ and two-dimensional ferromagnetic insulators. We show that four kinds of vdW heterostructures exhibit valley-polarized quantum anomalous Hall phase, i.e., Pt$_{2}$HgS$_{3}$/NiBr$_{2}$, Pt$_{2}$HgSe$_{3}$/CoBr$_{2}$, Pt$_{2}$HgSe$_{3}$/NiBr$_{2}$, and Pt$_{2}$ZnS$_{3}$/CoBr$_{2}$, with a maximum valley splitting of 134.2 meV in Pt$_{2}$HgSe$_{3}$/NiBr$_{2}$ and sizable global band gap of 58.8 meV in Pt$_{2}$HgS$_{3}$/NiBr$_{2}$. Our findings demonstrate an ideal platform to implement applications on topological valleytronics.

cond-mat.mes-hall↗

arXiv2022

Layer Zero-Line Modes in Antiferromagnetic Topological Insulators

Recently, the magnetic domain walls have been experimentally observed in antiferromagnetic topological insulators MnBi$_2$Te$_4$, where we find that the topological zero-line modes (ZLMs) appear along the domain walls. Here, we theoretically demonstrate that these ZLMs are layer-dependent in MnBi$_2$Te$_4$ multilayers. For domain walls with out-of-plane ferromagnetism, we find that ZLMs are equally distributed in the odd-number layers. When domain walls possess in-plane magnetization, the ZLMs can also exist in even-number layers due to in-plane mirror-symmetry breaking. Moreover, the conductive channels are mainly distributed in the outermost layers with increasing layer thickness. Our findings lay out a strategy in manipulating ZLMs and also can be utilized to distinguish the corresponding magnetic structures.

cond-mat.mes-hall↗

arXiv2022

Large Rashba Spin-Orbit Coupling and High-Temperature Quantum Anomalous Hall Effect in Re-Intercalated Graphene/CrI$_3$ Heterostructure

In 2010, quantum anomalous Hall effect (QAHE) in graphene was proposed in the presence of Rashba spin-orbit coupling and ferromagnetic exchange field. After a decade's experimental exploration, the anomalous Hall conductance can only reach about 0.25 in the units of $2e^2/h$, which was attributed to the tiny Rashba spin-orbit coupling. Here, we theoretically show that Re-intercalation in graphene/CrI$_3$ heterostructure can not only induce sizeable Rashba spin-orbit coupling ($>$ 40~meV), but also open up large band gaps at valleys $K$ (22.2 meV) and $K' $ (30.3 meV), and a global band gap over 5.5 meV (19.5 meV with random Re distribution) hosting QAHE. A low-energy continuum model is constructed to explain the underlying physical mechanism. We find that Rashba spin-orbit coupling is robust against external stress whereas a tensile strain can increase the global bulk gap. Furthermore, we also show that Re-intercalated graphene with hexagonal boron-nitride can also realize QAHE with bulk gap over 40~meV, indicating the tunability of $5d$-intercalated graphene-based heterostructure. Our finding makes a great leap towards the experimental realization of graphene-based QAHE, and will definitely accelerate the practical application of graphene-based low-power electronics.

cond-mat.mes-hall↗

arXiv2022

Chern Number Tunable Quantum Anomalous Hall Effect in Monolayer Transitional Metal Oxides via Manipulating Magnetization Orientation

Although much effort has been made to explore quantum anomalous Hall effect (QAHE) in both theory and experiment, the QAHE systems with tunable Chern numbers are yet limited. Here, we theoretically propose that NiAsO$_3$ and PdSbO$_3$, monolayer transitional metal oxides, can realize QAHE with tunable Chern numbers via manipulating their magnetization orientations. When the magnetization lies in the \textit{x-y} plane and all mirror symmetries are broken, the low-Chern-number (i.e., $\mathcal{C}=\pm1$) phase emerges. When the magnetization exhibits non-zero \textit{z}-direction component, the system enters the high-Chern-number (i.e., $\mathcal{C}=\pm3$) phase, even in the presence of canted magnetization. The global band gap can approach the room-temperature energy scale in monolayer PdSbO$_3$ (23.4 meV), when the magnetization is aligned to \textit{z}-direction. By using Wannier-based tight-binding model, we establish the phase diagram of magnetization induced topological phase transition. Our work provides a high-temperature QAHE system with tunable Chern number for the practical electronic application.

cond-mat.mes-hall↗

arXiv2022

Second-Order Topological Insulator in van der Waals Heterostructures of CoBr$_2$/Pt$_2$HgSe$_3$/CoBr$_2$

Second-order topological insulator, which has (d-2)-dimensional topological hinge or corner states, has been observed in three-dimensional materials, but has yet not been observed in two-dimensional system. In this Letter, we theoretically propose the realization of second-order topological insulator in the van der Waals heterostructure of CoBr$_2$/Pt$_2$HgSe$_3$/CoBr$_2$. Pt$_2$HgSe$_3$ is a large gap $\mathbb{Z}_2$ topological insulator. With in-plane exchange field from neighboring CoBr$_2$, a large band gap above 70 meV opens up at the edge. The corner states, which are robust against edge disorders and irregular shapes, are confirmed in the nanoflake. We further show that the second-order topological states can also be realized in the heterostructure of jacutingaite family $\mathbb{Z}_2$ topological insulators. We believe that our work will be beneficial for the experimental realization of second-order topological insulators in van der Waals layered materials.

cond-mat.mes-hall↗

arXiv2021

Realizing Kagome Band Structure in Two-Dimensional Kagome Surface States of $RV_{6}Sn_{6}$ ($R$=Gd,Ho)

We report angle resolved photoemission experiments on a newly discovered family of kagome metals $RV_{6}Sn_{6}$ ($R$=Gd, Ho). Intrinsic bulk states and surface states of the vanadium kagome layer are differentiated from those of other atomic sublattices by the real-space resolution of the measurements with a small beam spot. Characteristic Dirac cone, saddle point and flat bands of the kagome lattice are observed. Our results establish the two-dimensional (2D) kagome surface states as a new platform to investigate the intrinsic kagome physics.

cond-mat.mtrl-sci↗

arXiv2021

Pressure-induced dimensional crossover in a kagome superconductor

The recently discovered kagome superconductors AV3Sb5 exhibit tantalizing high-pressure phase diagrams, in which a new dome-like superconducting phase emerges under moderate pressure. However, its origin is as yet unknown. Here, we carried out the high-pressure electrical measurements up to 150 GPa, together with the high-pressure X-ray diffraction measurements and first-principles calculations on CsV3Sb5. We find the new superconducting phase to be rather robust and inherently linked to the interlayer Sb2-Sb2 interactions. The formation of Sb2-Sb2 bonds at high pressure tunes the system from two-dimensional to three-dimensional and pushes the Pz orbital of Sb2 upward across the Fermi level, resulting in enhanced density of states and increase of TC. Our work demonstrates that the dimensional crossover at high pressure can induce a topological phase transition and is related to the abnormal high-pressure TC evolution. Our findings should apply for other layered materials.

cond-mat.supr-con↗

arXiv2021

Large-Gap Quantum Anomalous Hall Effect in Monolayer Halide Perovskite

We theoretically propose a family of structurally stable monolayer halide perovskite A$_3$B$_2$C$_9$ (A=Rb, Cs; B=Pd, Pt; C=Cl, Br) with easy magnetization planes. These materials are all half-metals with large spin gaps over 1~eV accompanying with a single spin Dirac point located at K point. When the spin-orbit coupling is switched on, we further show that Rb$_3$Pt$_2$Cl$_9$, Cs$_3$Pd$_2$Cl$_9$, and Cs$_3$Pt$_2$Cl$_9$ monolayers can open up large band gaps from 63 to 103 meV to harbor quantum anomalous Hall effect with Chern numbers of $\mathcal{C}=\pm1$, whenever the mirror symmetry is broken by the in-plane magnetization. The corresponding Berezinskii-Kosterlitz-Thouless transition temperatures are over 248~K. Our findings provide a potentially realizable platform to explore quantum anomalous Hall effect and spintronics at high temperatures.

cond-mat.mes-hall↗

arXiv2021

Interlayer Ferromagnetism and High-Temperature Quantum Anomalous Hall Effect in \textit{p}-Doped MnBi$_2$Te$_4$ Multilayers

The interlayer antiferromagnetic coupling hinders the observation of quantum anomalous Hall effect in magnetic topological insulator MnBi$_2$Te$_4$. We demonstrate that interlayer \textit{ferromagnetism} can be established by utilizing the \textit{p}-doping method in MnBi$_2$Te$_4$ multilayers. In two septuple-layers system, the interlayer ferromagnetic coupling appears by doping nonmagnetic elements (e.g., N, P, As, Na, Mg, K, and Ca), due to the redistribution of orbital occupations of Mn. We further find that Mg and Ca elements are the most suitable candidates because of their low formation energy. Although, the \textit{p}-doped two septuple layers exhibit topologically trivial band structure, the increase of layer thickness to three (four) septuple layers with Ca (Mg) dopants leads to the formation of the quantum anomalous Hall effect. Our proposed \textit{p}-doping strategy not only makes MnBi$_2$Te$_4$ become an ideal platform to realize the high-temperature quantum anomalous Hall effect without external magnetic field, but also can compensate the electrons from the intrinsic \textit{n}-type defects in MnBi$_2$Te$_4$.

cond-mat.mtrl-sci↗