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Yumeng Yang

Publications and source records attributed to Yumeng Yang.

At least 37 records · Page 2Linked to original sources

Interplay between moment-dependent and field-driven unidirectional magnetoresistance in CoFeB/InSb/CdTe heterostructures

Magnetoresistance effects are crucial for understanding the charge/spin transport as well as propelling the advancement of spintronic applications. Here we report the coexistence of magnetic moment-dependent (MD) and magnetic field-driven (FD) unidirectional magnetoresistance (UMR) effects in CoFeB/InSb/CdTe heterostructures. The strong spin-orbital coupling of InSb and the matched impedance at the CoFeB/InSb interface warrant a distinct MD-UMR effect at room temperature, while the interaction between the in-plane magnetic field and the Rashba effect at the InSb/CdTe interface induces the marked FD-UMR signal that dominates the high-field region. Moreover, owning to the different spin transport mechanisms, these two types of nonreciprocal charge transport show opposite polarities with respect to the magnetic field direction, which further enable an effective phase modulation of the angular-dependent magnetoresistance. Besides, the demonstrations of both the tunable UMR response and two-terminal spin-orbit torque-driven magnetization switching validate our CoFeB/InSb/CdTe system as a suitable integrated building block for multifunctional spintronic device design.

physics.app-ph↗

Text Classification of Cancer Clinical Trial Eligibility Criteria

Automatic identification of clinical trials for which a patient is eligible is complicated by the fact that trial eligibility is stated in natural language. A potential solution to this problem is to employ text classification methods for common types of eligibility criteria. In this study, we focus on seven common exclusion criteria in cancer trials: prior malignancy, human immunodeficiency virus, hepatitis B, hepatitis C, psychiatric illness, drug/substance abuse, and autoimmune illness. Our dataset consists of 764 phase III cancer trials with these exclusions annotated at the trial level. We experiment with common transformer models as well as a new pre-trained clinical trial BERT model. Our results demonstrate the feasibility of automatically classifying common exclusion criteria. Additionally, we demonstrate the value of a pre-trained language model specifically for clinical trials, which yields the highest average performance across all criteria.

cs.CL↗

Integrated Artificial Neural Network with Trainable Activation Function Enabled by Topological Insulator-based Spin-Orbit Torque Devices

Non-volatile memristors offer a salient platform for artificial neural network (ANN), but the integration of different function blocks into one hardware system remains challenging. Here we demonstrate the implementation of brain-like synaptic (SOT-S) and neuronal (SOT-N) functions in the Bi2Te3/CrTe2 heterostructure-based spin-orbit torque (SOT) device. The SOT-S unit exhibits highly linear (linearity error < 4.19%) and symmetrical long-term potentiation/depression process, resulting in better performance compared to other memristor synapses. Meanwhile, the Sigmoid-shape transition curve inherited in the SOT-N cell replaces the software-based activation function block, hence reducing the system complexity. On this basis, we employ a serial-connected, voltage-mode sensing ANN architecture to enhance the vector-matrix multiplication signal strength with low reading error of 0.61%. Furthermore, the trainable activation function of SOT-N enables the integrated SOT-ANN to execute the Batch Normalization algorithm and activation operation within one clock cycle, which bring about improved on/off-chip training performance close to the ideal baseline.

cond-mat.mes-hall↗

Polarization-Orthogonal Nondegenerate Plasmonic Higher-Order Topological States

Photonic topological states, providing light-manipulation approaches in robust manners, have attracted intense attention. Connecting photonic topological states with far-field degrees of freedom(DoFs) has given rise to fruitful phenomena. Recently emerged higher-order topological insulators (HOTIs), hosting boundary states two or more dimensions lower than those of bulk, offer new paradigms to localize/transport light topologically in extended dimensionalities. However, photonic HOTIs have not been related to DoFs of radiation fields yet. Here, we report the observation of polarization-orthogonal second-order topological corner states at different frequencies on a designer-plasmonic Kagome metasurface in the far field.Such phenomenon stands on two mechanisms, i.e., projecting the far-field polarizations to the intrinsic parity DoFs of lattice modes and the parity splitting of the plasmonic corner states in spectra. We theoretically and numerically show that the parity splitting originates from the underlying inter-orbital coupling. Both near-field and far-field experiments verify the polarization-orthogonal nondegeneratesecond-order topological corner states. These results promise applications in robust optical single photon emitters and multiplexed photonic devices.

physics.optics↗

Anomalous impact of thermal fluctuations on spintransfer torque induced ferrimagnetic switching

The dynamics of a spin torque driven ferrimagnetic (FiM) system is investigated using the two-sublattice macrospin model. We demonstrate an ultrafast switching in the picosecond range. However, we find that the excessive current leads to the magnetic oscillation. Therefore, faster switching cannot be achieved by unlimitedly increasing the current. By systematically studying the impact of thermal fluctuations, we find the dynamics of FiMs can also be distinguished into the precessional region, the thermally activated region, and the cross-over region. However, in the precessional region, there is a significant deviation between FiM and ferromagnet (FM), i.e., the FM is insensitive to thermal fluctuations since its switching is only determined by the amount of net charge. In contrast, we find that the thermal effect is pronounced even a very short current pulse is applied to the FiM. We attribute this anomalous effect to the complex relation between the anisotropy and overdrive current. By controlling the magnetic anisotropy, we demonstrate that the FiM can also be configured to be insensitive to thermal fluctuations. This controllable thermal property makes the FiM promising in many emerging applications such as the implementation of tunable activation functions in the neuromorphic computing.

cond-mat.mes-hall↗

Efficient domain wall motion driven by the out-of-plane spin polarization

Fast domain wall motion in systems with perpendicular magnetization is necessary for many novel applications such as the racetrack memory, domain wall logic devices and artificial synapses. The domain wall speed has been greatly improved after the demonstration of current driven domain wall motion using the spin transfer torque, and later achieved another leap due to the combined effect of spin-Hall effect and Dzyaloshinskii-Moriya interaction (DMI). However, only Neel wall can be effectively driven in the latter system. In this paper, we show that both Bloch and Neel domain walls can be effectively moved by exploiting the field-like torque with the out-of-plane spin polarization, which can be generated in materials with reduced symmetry. In addition, we find that the Neel wall and Bloch walls stabilized by the magnetostatic energy are easily distorted by the spin-orbit torque and they then enter the Walker breakdown region. External magnetic field and DMI are introduced to stabilize the domain wall, and a very high domain wall velocity over 500 m/s is obtained at a moderate current density of $2\times 10^{11} A/m^2$. In principle, this mechanism can be used to drive any types of domain walls. This work thus provides new degrees of freedom in the control of domain wall motion.

cond-mat.mes-hall↗

Field-free spin-orbit torque switching of an antiferromagnet with perpendicular Néel vector

The field-free spin-orbit torque induced 180° reorientation of perpendicular magnetization is beneficial for the high performance magnetic memory. The antiferromagnetic material (AFM) can provide higher operation speed than the ferromagnetic counterpart. In this paper, we propose a trilayer AFM/Insulator/Heavy Metal structure as the AFM memory device. We show that the field-free switching of the AFM with perpendicular Néel vector can be achieved by using two orthogonal currents, which provide the uniform damping-like torque and stagger field-like torque, respectively. The reversible switching can be obtained by reversing either current. A current density of 1.79 10^11A/m^2 is sufficient to induce the switching. In addition, the two magnetic moments become noncollinear during the switching. This enables an ultrafast switching within 40 picoseconds. The device and switching mechanism proposed in this work offer a promising approach to deterministically switch the AFM with perpendicular Néel vector. It can also stimulate the development of ultrafast AFM-based MRAM.

cond-mat.mes-hall↗

Electrical Tunable Spintronic Neuron with Trainable Activation Function

Spintronic devices have been widely studied for the hardware realization of artificial neurons. The stochastic switching of magnetic tunnel junction driven by the spin torque is commonly used to produce the sigmoid activation function. However, the shape of the activation function in previous studies is fixed during the training of neural network. This restricts the updating of weights and results in a limited performance. In this work, we exploit the physics behind the spin torque induced magnetization switching to enable the dynamic change of the activation function during the training process. Specifically, the pulse width and magnetic anisotropy can be electrically controlled to change the slope of activation function, which enables a faster or slower change of output required by the backpropagation algorithm. This is also similar to the idea of batch normalization that is widely used in the machine learning. Thus, this work demonstrates that the algorithms are no longer limited to the software implementation. They can in fact be realized by the spintronic hardware using a single device. Finally, we show that the accuracy of hand-written digit recognition can be improved from 88% to 91.3% by using these trainable spintronic neurons without introducing additional energy consumption. Our proposals can stimulate the hardware realization of spintronic neural networks.

cs.ET↗

Spatially Nonuniform Oscillations in Ferrimagnets Based on an Atomistic Model

The ferrimagnets, such as GdxFeCo(1-x), can produce ultrafast magnetic switching and oscillation due to the strong exchange field. The two-sublattices macrospin model has been widely used to explain the experimental results. However, it fails in describing the spatial nonuniform magnetic dynamics which gives rises to many important phenomenons such as the domain walls and skyrmions. Here we develop the two-dimensional atomistic model and provide a torque analysis method to study the ferrimagnetic oscillation. Under the spin-transfer torque, the magnetization oscillates in the exchange mode or the flipped exchange mode. When the Gd composition is increased, the exchange mode firstly disappears, and then appears again as the magnetization compensation point is reached. We show that these results can only be explained by analyzing the spatial distribution of magnetization and effective fields. In particular, when the sample is small, a spatial nonuniform oscillation is also observed in the square film. Our work reveals the importance of spatial magnetic distributions in understanding the ferrimagnetic dynamics. The method developed in this paper provides an important tool to gain a deeper understanding of ferrimagnets and antiferromagnets. The observed ultrafast dynamics can also stimulate the development of THz oscillators.

cond-mat.mes-hall↗

Causal Models, Prediction, and Extrapolation in Cell Line Perturbation Experiments

In cell line perturbation experiments, a collection of cells is perturbed with external agents (e.g. drugs) and responses such as protein expression measured. Due to cost constraints, only a small fraction of all possible perturbations can be tested in vitro. This has led to the development of computational (in silico) models which can predict cellular responses to perturbations. Perturbations with clinically interesting predicted responses can be prioritized for in vitro testing. In this work, we compare causal and non-causal regression models for perturbation response prediction in a Melanoma cancer cell line. The current best performing method on this data set is Cellbox which models how proteins causally effect each other using a system of ordinary differential equations (ODEs). We derive a closed form solution to the Cellbox system of ODEs in the linear case. These analytic results facilitate comparison of Cellbox to regression approaches. We show that causal models such as Cellbox, while requiring more assumptions, enable extrapolation in ways that non-causal regression models cannot. For example, causal models can predict responses for never before tested drugs. We illustrate these strengths and weaknesses in simulations. In an application to the Melanoma cell line data, we find that regression models outperform the Cellbox causal model.

stat.AP↗

Wafer-scale epitaxial growth of the thickness-controllable van der Waals ferromagnet CrTe2 for reliable magnetic memory applications

To harness the intriguing properties of two-dimensional van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, we demonstrate the epitaxial growth of single-crystalline 1T-CrTe2 thin films on 2-inch sapphire substrates. Benefiting from the uniform surface energy of the dangling bond-free Al2O3(0001) surface, the layer-by-layer vdW growth mode is observed right from the initial growth stage, which warrants precise control of the sample thickness and atomically smooth surface morphology across the entire wafer. Moreover, the presence of the Coulomb interaction at the CrTe2/Al2O3 interface serves as an effective tuning parameter to tailor the anomalous Hall response, and the structural optimization of the CrTe2-based spin-orbit torque device leads to a substantial switching power reduction by 54%. Our results may lay out a general framework for the design of energy-efficient spintronics based on configurable vdW FMs.

cond-mat.mtrl-sci↗

Room Temperature Gate Tunable Non Reciprocal Charge Transport in Lattice Matched InSb/CdTe Heterostructures

The manipulation of symmetry provides an effective way to tailor the physical orders in solid-state systems. With the breaking of both the inversion and time-reversal symmetries, non-reciprocal magneto-transport may emerge in assorted non-magnetic systems to enrich spintronic physics. Here, we report the observation of the uni-directional magneto-resistance (UMR) in the lattice-matched InSb/CdTe film up to room temperature. Benefiting from the strong built-in electric field of $0.13 \mathrm{~V} \cdot \mathrm{nm}^{-1}$ in the hetero-junction region, the resulting Rashba-type spin-orbit coupling and quantum confinement warrant stable angular-dependent second-order charge current with the non-reciprocal coefficient 1-2 orders of magnitude larger than most non-centrosymmetric materials at 298 K. More importantly, this heterostructure configuration enables highly-efficient gate tuning of the rectification response in which the enhancement of the UMR amplitude by 40% is realized. Our results advocate the narrow-gap semiconductor-based hybrid system with the robust two-dimensional interfacial spin texture as a suitable platform for the pursuit of controllable chiral spin-orbit devices and applications.

cond-mat.mes-hall↗

Tailoring Magnetic Exchange Interactions in Ferromagnet-Intercalated MnBi2Te4 Superlattices

The intrinsic magnetic topological insulator MnBi2Te4 (MBT) has provided a platform for the successful realization of exotic quantum phenomena. To broaden the horizons of MBT-based material systems, we intercalate ferromagnetic MnTe layers to construct the [(MBT)(MnTe)m]N superlattices by molecular beam epitaxy. The effective incorporation of ferromagnetic spacers mediates the anti-ferromagnetic interlayer coupling among the MBT layers through the exchange spring effect at the MBT/MnTe hetero-interfaces. Moreover, the precise control of the MnTe thickness enables the modulation of relative strengths among the constituent magnetic orders, leading to tunable magnetoelectric responses, while the superlattice periodicity serves as an additional tuning parameter to tailor the spin configurations of the synthesized multi-layers. Our results demonstrate the advantages of superlattice engineering for optimizing the magnetic interactions in MBT-family systems, and the ferromagnet-intercalated strategy opens up new avenues in magnetic topological insulator structural design and spintronic applications.

cond-mat.mtrl-sci↗

Efficient field-free perpendicular magnetization switching by a magnetic spin Hall effect

Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular magnetic anisotropy that are demanded by the high-density magnetic storage and memory devices. Here, we demonstrate that this limitation can be overcome by exploiting a magnetic spin Hall effect in noncollinear antiferromagnets, such as Mn3Sn. The magnetic group symmetry of Mn3Sn allows generation of the out-of-plane spin current carrying spin polarization induced by an in-plane charge current. This spin current drives an out-of-plane anti-damping torque providing deterministic switching of perpendicular magnetization of an adjacent Ni/Co multilayer. Compared to the conventional spin-orbit torque devices, the observed switching does not need any external magnetic field and requires much lower current density. Our results demonstrate great prospects of exploiting the magnetic spin Hall effect in noncollinear antiferromagnets for low-power spintronics.

cond-mat.mtrl-sci↗

Eddy Current Testing of Metal Cracks Using Spin Hall Magnetoresistance Sensor and Machine Learning

Recently we have developed a spin Hall magnetoresistance (SMR) sensor which operates under AC bias and sense currents. Here we demonstrate both theoretically and experimentally that the SMR sensor is uniquely suited for eddy current testing applications because both the coil and sensor utilize AC current as the excitation source. The use of SMR sensor effectively eliminates the necessity of any demodulation or lock-in technique for detecting the eddy current, which greatly simplifies the detection system. Furthermore, we show that the combination of principal component analysis and decision tree model is effective in classifying the metal cracks. The relatively clean signals obtained by the SMR sensor greatly facilitates the subsequent signal analysis and ensures high accuracy in the classification of different types of crack features.

cond-mat.mtrl-sci↗

Terahertz Emission From an Exchange-Coupled Synthetic Antiferromagnet

We report on terahertz emission from FeMnPt/Ru/FeMnPt and Pt/CoFeB/Ru/CoFeB/Pt synthetic antiferromagnet (SAF) structures upon irradiation by a femtosecond laser; the former is via the anomalous Hall effect, whereas the latter is through the inverse spin Hall effect. The antiparallel alignment of the two ferromagnetic layers leads to a terahertz emission peak amplitude that is almost double that for a corresponding single-layer or bilayer emitter with the same equivalent thickness. In addition, we demonstrate by both simulation and experiment that terahertz emission provides a powerful tool to probe the magnetization reversal processes of individual ferromagnetic layers in a SAF structure, as the terahertz signal is proportional to the vector difference of the magnetizations of the two ferromagnetic layers.

cond-mat.mtrl-sci↗

Terahertz emission from anomalous Hall effect in a single-layer ferromagnet

We report on terahertz emission from a single layer ferromagnet which involves the generation of backflow nonthermal charge current from the ferromagnet/dielectric interface by femtosecond laser excitation and subsequent conversion of the charge current to a transverse transient charge current via the anomalous Hall effect, thereby generating the THz radiation. The THz emission can be either enhanced or suppressed, or even the polarity can be reversed, by introducing a magnetization gradient in the thickness direction of the ferromagnet. Unlike spintronic THz emitters reported previously, it does not require additional non-magnetic layer or Rashba interface.

physics.app-ph↗

Intrinsic skyrmions in monolayer Janus magnets

Skyrmions are localized solitonic spin textures with protected topology, which are promising as information carriers in ultra-dense and energy-efficient logic and memory devices. Recently, magnetic skyrmions have been observed in magnetic thin films, and are stabilized by the extrinsic interfacial Dzyaloshinskii-Moriya interaction (DMI) and/or external magnetic fields. The specific effects in magnetic monolayer materials have not been thoroughly studied. Here, we investigate the intrinsic magnetic skyrmions in a family of monolayer Janus van der Waals magnets, MnSTe, MnSeTe, VSeTe, and MnSSe, by the first-principles calculations combined with the micromagnetic simulations. The monolayer Janus MnSTe, MnSeTe, and VSeTe with out-of-plane geometric asymmetry and strong spin-orbit coupling (SOC) have a large intrinsic DMI, which could stabilize a sub-50 nm intrinsic skyrmions in monolayer MnSTe and MnSeTe at zero magnetic field. While monolayer VSeTe with in-plane easy axis forms magnetic domain rather than skyrmions. Moreover, the size and shape of skyrmions can be tuned by an external magnetic field. Therefore, our work motivates a new vista for seeking intrinsic skyrmions in atomic-scale magnets.

cond-mat.mes-hall↗