arXiv subjects

Yuming Bai

Publications and source records attributed to Yuming Bai.

3 recordsLinked to original sources

arXiv2026

Origin and Propagation of Spin-orbit Torques in Pt/Co/Cu/NiFe/Capping Multilayers

Spin-orbit torque (SOT) enables efficient current-driven control of magnetization, offering a promising pathway toward low-power spintronic devices. However, the origin and propagation of both damping-like (DL) and field-like (FL) SOTs in complex multilayers remain unclear. Here, we investigate NiFe thickness-dependent SOT efficiencies in Ta/Pt/Co/Cu/NiFe/Cu/Capping multilayers (x = 15 nm; Capping = Pt, Al, and SiO2). By employing a spin rotation geometry, the perpendicularly magnetized Pt/Co/Cu stacks serve as a spin source introducing unconventional spin polarization orthogonal to the Oersted field, eliminating its contribution and enabling unambiguous separation of SOTs using planar Hall and polar MOKE measurements. To distinguish bulk and interfacial contributions, we introduce a sample-area-normalized moment m = mNiFe/S, accounting for thickness-dependent magnetization and eliminating uncertainties arising from nominal thickness scaling and magnetic dead layers. We find that DL-SOT follows nearly linear 1/m scaling, consistent with rapid spin absorption at the Cu/NiFe interface but exhibits finite beta_SOT when 1/m approaches zero in both Pt- and Al-capped samples, indicating additional interfacial spin-current contributions at Cu/Pt and Cu/Al interfaces. In contrast, SiO2-capped samples show negligible interfacial contributions. Furthermore, FL-SOT deviates markedly from 1/m scaling and exhibits a significantly longer spin dephasing length (about 1.7 nm) compared to DL-SOT, implying extended propagation across NiFe. Comparative capping-layer studies further corroborate this behavior through interface-dependent spin transport. Our findings clarify the origin and distinct propagation characteristics of DL and FL torques, providing guidelines for engineering interfacial spin-orbit functionalities in ultrathin metallic heterostructures.

cond-mat.mtrl-sci↗

arXiv2021

Shubnikov-de Haas Oscillations and Nontrivial Topological State in a New Weyl Semimetal Candidate SmAlSi

We perform the quantum magnetotransport measurements and first-principles calculations on high quality single crystals of SmAlSi, a new topological Weyl semimetal candidate. At low temperatures, SmAlSi exhibits large non-saturated magnetoresistance (MR)~5200% (at 2 K, 48 T) and prominent Shubnikov-de Haas (SdH) oscillations, where MRs follow the power-law field dependence with exponent 1.52 at low fields (μ0H < 15 T) and linear behavior 1 under high fields (μ0H > 18 T). The analysis of angle dependent SdH oscillations reveal two fundamental frequencies originated from the Fermi surface (FS) pockets with non-trivial π Berry phases, small cyclotron mass and electron-hole compensation with high mobility at 2 K. In combination with the calculated nontrivial electronic band structure, SmAlSi is proposed to be a paradigm for understanding the Weyl fermions in the topological materials.

cond-mat.mtrl-sci↗

arXiv2021

Large topological Hall effect near room temperature in noncollinear ferromagnet LaMn2Ge2 single crystal

Non-trivial spin structures in itinerant magnets can give rise to topological Hall effect (THE) due to the interacting local magnetic moments and conductive electrons. While, in series of materials, THE has mostly been observed at low temperatures far below room temperature (RT) limiting its potential applications. Here, we report the anisotropic anomalous Hall effect (AHE) near RT in LaMn2Ge2, a noncollinear ferromagnetic (FM) with Curie temperature TC=325 K. Large topological Hall resistivity of ~1.0 10-6 ohmcm in broad temperature range (190 K <T< 300 K) is realized as field (H) parallel to the ab-plane (H // ab) and current along c axis (I // c), in contrast to the conventional AHE for H // c and I // ab. The emergence of THE is attributed to the spin chirality of noncoplanar spin configurations stabilized by thermal fluctuation during spin flop process. Moreover, the constructed temperature-field (H-T) phase diagrams based on the isothermal topological Hall resistivity reveal a field-induced transition from the noncoplanar spin configuration to polarized ferromagnetic states. Our experimental realization of large THE near RT highlights LaMn2Ge2 as a promising system for functional applications in novel spintronic devices.

cond-mat.str-el↗