arXiv subjects

Yunfan Liang

Publications and source records attributed to Yunfan Liang.

5 recordsLinked to original sources

arXiv2026

Atomic short-range order: a new degree of freedom for band engineering of GeSn semiconductor alloys

Chemical short-range order (SRO) in alloys denotes the statistical preference or avoidance between atomic species on neighboring lattice sites. Here, we highlight SRO as a powerful new mechanism for semiconductor alloy band engineering. Atom probe tomography reveals a significantly higher probability of Sn-Sn first nearest neighbors (1NNs) in thin-film GeSn alloys grown by molecular beam epitaxy (MBE) vs. chemical vapor deposition (CVD). Remarkably, although lower Sn concentration typically widens the bandgap, we find that the stronger presence of Sn-Sn 1NN pairs in MBE samples overrides this trend, resulting in a narrower bandgap despite having 2 at.\% lower Sn content than CVD samples. First-principles modeling corroborates this effect, attributing these SRO variations to distinctive surface terminations and growth temperatures between MBE and CVD. These findings establish SRO as a new degree of freedom for semiconductor band engineering beyond composition, strain, and quantum confinement, unlocking novel device mechanisms for the post-Moore era.

cond-mat.mtrl-sci↗

arXiv2025

Uncovering the Fourier Structure of Wavefunctions in Semiconductors

Symmetry is at the heart of material properties. Symmetry of the Bravais lattice defines the degeneracy of planewaves, upon which atomic symmetry determines interaction potentials which may lift such degeneracies. This results in wavefunctions which are single planewaves throughout the Brillouin zone (BZ), except in the vicinity of lifted degeneracies. This great simplification allows for determination of optical properties from a handful of planewaves and a single transition. Further, it reveals that nonlinear optical response arises from higher order degeneracy along lines/points in the BZ.

cond-mat.mtrl-sci↗

arXiv2025

Semiconductor-compatible topological digital alloys

Recently, GeSn alloys have attracted much interest for direct-gap infrared photonics and as potential topological materials which are compatible with the semiconductor industry. However, for photonics, the high-Sn content required leads to low detectivity, associated with poor material quality, and the (>35%) Sn required for topological properties have been out of reach experimentally. Here, we demonstrate that by patterning the Sn distribution within Ge, the electronic properties have a far greater tunability than is possible with the random alloy. For the GeSn δ-digital alloy (DA) formed by confining Sn atoms in atomic layer(s) along the [111] direction of Ge, we show that ~10% Sn can lead to a triple-point semimetal. These findings are understood in terms of Sn ordering causing spatial separation of Sn and Ge band edges, leading to band inversion. This mechanism can also lead to a weak topological insulator, Weyl semimetal, and enables tunable direct bandgaps down to 2 meV, covering the entire infrared range. This DA induced topological properties are also identified in compound semiconductors, such as InAs1-xSbx, showing the general applicability of the DA design for realizing topological properties on conventional semiconductor platforms. Our findings not only point to a new class of currently unexplored topological systems accessible by epitaxy, but also establish the promise of low-Sn GeSn DAs for application as infrared laser diodes and photodetectors in Si photonic integrated circuits and infrared image sensors.

cond-mat.mtrl-sci↗

arXiv2023

Small polarom formation by electron-electron interaction

In a solid, electrons can be scattered both by phonons and other electrons. First proposed by Landau, scattering by phonons can lead to a composite entity called a polaron, in which a lattice distortion traps an itinerant electron (or hole) such that the distortion and carrier move in unison as a single particle with larger effective mass. While this is the traditional view of polarons, the rise of 2D systems, especially strongly correlated ones, open the prospect of electron scattering taking on a larger role in spontaneous carrier localization for such material systems. Here, we show that in transition metal halides, such electron-electron interactions can lead to polaron formation even in the absence of lattice distortion. This suggests an alternative direction for polaron formation, transport, and control in solids. This new mechanism of polaron formation is confirmed by first-principles calculation of 2D transition metal halides, CrI2, CoCl2 and CoBr2. These theoretical predictions are supported by scanning tunneling microscopy/spectroscopy measurements of polarons in CrI2.

cond-mat.mtrl-sci↗

arXiv2022

Manipulating single excess electrons in monolayer transition metal dihalide

Polarons are entities of excess electrons dressed with local response of lattices, whose atomic-scale characterization is essential for understanding the many body physics arising from the electron-lattice entanglement, but yet difficult to achieve. Here, using scanning tunneling microscopy and spectroscopy (STM/STS), we show the visualization and manipulation of single polarons with different origin, i.e., electronic and conventional polarons, in monolayer CoCl2, that are grown on HOPG substrate via molecular beam epitaxy. Four types of polarons are identified, all inducing upward local band bending, but exhibiting distinct appearances, lattice occupations, polaronic states and local lattice distortions. First principles calculations unveil three types of polarons are stabilized by electron-electron interaction. The type-4 polaron, however, are driven by conventional lattice distortions. All the four types of polarons can be created, moved, erased, and moreover interconverted individually by the STM tip, allowing precise control of single polarons unprecedently. This finding identifies the rich category of polarons and their feasibility of manipulation in CoCl2, which can be generalized to other transition metal halides.

cond-mat.mes-hall↗