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Yung-Cheng Li

Publications and source records attributed to Yung-Cheng Li.

2 recordsLinked to original sources

Cryogenic Magnetization Dynamics in Chemically Stabilized, Tensile-Strained Ultrathin Yttrium Iron Garnets with Tunable Magnetic Anisotropy

We report an interfacial chemical stability-driven reduction of low-temperature damping losses in tensile-strained, ultrathin Y3Fe5O12 (YIG) films grown by pulsed laser deposition, exhibiting ultralow damping constants and tunable magnetic anisotropy. Comparative broadband FMR measurements show that tensile-strained YIG films on Gd3Sc2Ga3O12 (GSGG) retain measurable damping even at nanometer thicknesses and cryogenic temperatures down to 2 K, outperforming relaxed films on Gd3Ga5O12. Based on static magnetometry measurements along with microstructural and compositional analyses, we attribute these enhanced dynamic properties to the suppression of interdiffusion across the YIG/GSGG interface, resulting from enhanced chemical stability and favorable growth kinetics by the presence of Sc. Our findings highlight the importance of chemical and kinetic factors in achieving few-nanometer-thick YIG film with negligible low-temperature damping dissipation and perpendicular magnetic anisotropy for cryogenic spintronic applications.

cond-mat.mtrl-sci

Field-Free Switching in Symmetry Breaking Multilayers: The Critical Role of Interlayer Chiral Exchange

It is crucial to realize field-free, deterministic, current-induced switching in spin-orbit torque magnetic random-access memory (SOT-MRAM) with perpendicular magnetic anisotropy (PMA). A tentative solution has emerged recently, which employs the interlayer chiral exchange coupling or the interlayer Dzyaloshinskii-Moriya interaction (i-DMI) to achieve symmetry breaking. We hereby investigate the interlayer DMI in a Pt/Co multilayer system with orthogonally magnetized layers, using repeatedly stacked [Pt/Co]n structure with PMA, and a thick Co layer with in-plane magnetic anisotropy (IMA). We clarify the origin and the direction of such symmetry breaking with relation to the i-DMI effective field, and show a decreasing trend of the said effective field magnitude to the stacking number (n). By comparing the current-induced field-free switching behavior for both PMA and IMA layers, we confirm the dominating role of i-DMI in such field-free switching, excluding other possible mechanisms such as tilted-anisotropy and unconventional spin currents that may have arisen from the symmetry breaking.

cond-mat.mtrl-sci