arXiv subjects

Yunguo Li

Publications and source records attributed to Yunguo Li.

6 recordsLinked to original sources

arXiv2017

Impurity effects on the grain boundary cohesion in copper

Segregated impurities at grain boundaries can dramatically change the mechanical behavior of metals, while the mechanism is still obscure in some cases. Here, we suggest an unified approach to investigate segregation and its effects on the mechanical properties of polycrystalline alloys using the example of 3$sp$ impurities (Mg, Al, Si, P, or S) at a special type $Σ5(310)[001]$ tilt grain boundary in Cu. We show that for these impurities segregating to the grain boundary the strain contribution to the work of grain boundary decohesion is small and that the chemical contribution correlates with the electronegativity difference between Cu and the impurity. The strain contribution to the work of dislocation emission is calculated to be negative, while the chemical contribution to be always positive. Both the strain and chemical contributions to the work of dislocation emission generally become weaker with the increasing electronegativity from Mg to S. By combining these contributions together we find, in agreement with experimental observations, that a strong segregation of S can reduce the work of grain boundary separation below the work of dislocation emission, thus embrittling Cu, while such an embrittlement cannot be produced by a P segregation because it lowers the energy barrier for dislocation emission relatively more than for work separation.

cond-mat.mtrl-sci↗

arXiv2017

Strain engineering and photocatalytic application of single-layer ReS$_2$

We present a theoretical study on the electronic, dynamical, and photocatalytic properties of single-layer ReS$_2$ under uniaxial and shear strains. The single-layer ReS$_2$ shows strong anisotropic responses to straining. It remains dynamically stable for a wide range of $x$-axial strain, but becomes unstable for 2\% $y$-axial compressive strain. The single-layer ReS$_2$ is calculated to be an indirect bandgap semiconductor, and there is an indirect$-$direct bandgap transition under 1$-$5\% $x$-axial tensile straining. The single-layer ReS$_2$ is predicted incapable of catalyzing the water oxidation reaction. However, 1$-$5\% $y$-axial tensile strain can enable the single-layer ReS$_2$ for overall photocatalytic water splitting. Besides, the single-layer ReS$_2$ can also catalyze the overall water splitting and be most efficient under acidic water solutions with pH=3.8.

cond-mat.mtrl-sci↗

arXiv2016

A new 2D monolayer BiXene, M2C (M=Mo, Tc, Os)

Note this is a rather coarse version of our manuscript since uploading tex files are necessary (we are not willing to upload all tex files). The existence of BiXenes, a new family of 2D monolayers is here predicted. Theoretically, BiXenes have 1H symmetry (P-6m2) and can be formed from the 4d/5d binary carbides. As the name suggests, they are close relatives of MXenes, which instead have 1T symmetry (P-3m1). The newly found BiXenes, as well as some new MXenes, are shown to have formation energies close to that of germanene, which suggests that these materials should be possible to be synthesised. Among them, we illustrate that 1H-Tc2C and 1T-Mo2C are dynamically stable at 0 K, while 1H-Mo2C, 1TTc2C, 1H-Tc2C, and 1T-Rh2C are likely to be stabilised via strain or temperature. In addition, the nature of the chemical bonding is analysed, emphasizing that the covalency between the transition metal ions and carbon is much stronger in BiXenes than in MXenes. The emergence of BiXenes can not only open up a new era of conducting 2D monolayers, but also provide good candidates for carrier materials aimed at energy storage and spintronic devices that have already been unveiled in MXenes.

cond-mat.mtrl-sci↗

arXiv2014

The nature of hydrogen in gamma-alumina

Gibbs free energy models are derived from the calculated electronic and phonon structure of two possible models of $γ$-alumina, a defective spinel phase and a hydrogenated spinel phase. The intrinsic vacancies and hydrogen in the two structural models give rise to a considerable configurational (residual) entropy and significantly contribute to thermodynamic stability and physical-chemical properties of $γ$-alumina, which was neglected in previous studies but considered in this work. The electronic densities of states, calculated using a hybrid functional for the two structural models of $γ$-alumina, are presented. The dynamic stability of the two phases is confirmed by full-spectrum phonon calculations. The two phases share many similarities in their electronic structure, but can be distinguished by their vibrational spectra and specific heat. The defective spinel is found to be the ground state of $γ$-alumina, while the hydrogenated spinel to be a metastable phase. However, dehydration of the metastable phase into the ground state is expected to be slow due to the low diffusion rate of H, which leaves hydrogen as a locked-in impurity in $γ$-alumina.

cond-mat.mtrl-sci↗

arXiv2013

Single-layer MoS2 as efficient photocatalyst

The potential application of the single-layer MoS2 as photocatalyst was revealed in this work based on first-principles calculations. It is found that the pristine single-layer MoS2 is a good candidate for photocatalyst, and its catalyzing ability can be tuned by the applied mechanical strain. Furthermore, the p-type doping could improve the catalyzing ability more efficiently: first, the p-type doping makes the direct transition of electron from valence band maximum (VBM) to conduction band minimum (CBM) viable; second, it separates the water splitting reaction sites by having reduction in Mo sites and oxidation in P dopant sites; third, it improves the efficiency by equalizing the reducing power Δ1 and oxidizing power Δ2, as well as by enhancing the light absorption in long wavelength end of the visible light. Thus enables the single-layer MoS2 to be a efficient visible-light photocatalyst.

cond-mat.mtrl-sci↗

arXiv2012

Strain-induced stabilization of Al functionalization in graphene oxide nanosheet for enhanced NH3 storage

Strain effects on the stabilization of Al ad-atom on graphene oxide(GO)nanosheet as well as its implications for NH3 storage have been investigated using first-principles calculations.The binding energy of Al ad-atom on GO is found to be a false indicator of its stability.Tensile strain is found to be very effective in stabilizing the Al ad-atom on GO.It strengthens the C-O bonds through an enhanced charge transfer from C to O atoms. Interestingly,C-O bond strength is found to be the correct index for Al's stability.Optimally strained Al-functionalized GO binds up to 6 NH3 molecules,while it binds no NH3 molecule in unstrained condition.

cond-mat.mtrl-sci↗