arXiv subjects

Yunhao Lu

Publications and source records attributed to Yunhao Lu.

At least 19 recordsLinked to original sources

arXiv2025

Observation of multiple surface states in naturally cleavable chiral crystal PdSbSe

Chiral multifold fermions in solids exhibit unique band structures and topological properties, making them ideal for exploring fundamental physical phenomena related to nontrivial topology, chirality, and symmetry breaking. However, the challenge of obtaining clean, flat surfaces through cleavage has hindered the investigation of their unique electronic states. In this study, we utilize high-resolution angle-resolved photoemission spectroscopy and density functional theory calculations to investigate the low-energy electronic structure of the cleavable single-crystal PdSbSe. Our combined experimental and theoretical analysis reveals the presence of multifold degenerate fermions within this chiral crystal. We also observe multiple chiral Fermi arc surface states and spin-splitting behavior in the associated bulk bands. These findings provide unique insights into chiral, multifold fermionic states in easily cleavable crystals and offer a robust platform for further research into their unique electronic properties and potential applications in novel electronic devices.

cond-mat.mtrl-sci↗

arXiv2024

Unveiling hole-facilitated amorphisation in pressure-induced phase transformation of silicon

Pressure-induced phase transformation occurs during silicon (Si) wafering processes. \b{eta}-tin (Si-II) phase is formed at high pressures, followed by the transformation to Si-XII, Si-III or/and amorphous Si ({\alpha}-Si) phases during the subsequent decompression. While the imposed pressure and its release rate are known to dictate the phase transformation of Si, the effect of charge carriers are ignored. Here, we experimentally unveil that the increased hole concentration facilitates the amorphization in the pressure-induced phase transformation of Si. The underlying mechanism is elucidated by the theoretical calculations based on machine-learning interatomic potentials. The hole-facilitated amorphization is also experimentally confirmed to occur in the indented Ge, GaAs or SiC. We discover that hole concentration is another determining factor for the pressure-induced phase transformations of the industrially important semiconductors.

cond-mat.mtrl-sci↗

arXiv2024

Tunable topological edge states in black phosphorus-like Bi(110)

We have investigated the structures and electronic properties of ultra-thin Bi(110) films grown on an s-wave superconductor substrate using low-temperature scanning tunneling microscopy and spectroscopy. Remarkably, our experimental results validate the theoretical predictions that the manipulation of Bi(110) surface atom buckling can control the topological phase transition. Notably, we have observed robust unreconstructed edge states at the edges of both 3-bilayer (BL) and 4-BL Bi(110) films, with the 4-BL film displaying stronger edge state intensity and a smaller degree of atomic buckling. First-principle calculations further substantiate these findings, demonstrating a gradual reduction in buckling as the film thickness increases, with average height differences between two Bi atoms of approximately 0.19 {\AA}, 0.10 {\AA}, 0.05 {\AA}, and 0.00 {\AA} for the 1-BL, 2-BL, 3-BL, and 4-BL Bi(110) films, respectively. When Bi films are larger than 2 layers, the system changes from a trivial to a non-trivial phase. This research sets the stage for the controlled realization of topological superconductors through the superconducting proximity effect, providing a significant platform for investigating Majorana zero modes and fabricating quantum devices.

cond-mat.mtrl-sci↗

arXiv2023

Massive topological edge channels in three-dimensional topological materials induced by extreme surface anisotropy

A two-dimensional quantum spin Hall insulator exhibits one-dimensional gapless spin-filtered edge channels allowing for dissipationless transport of charge and spin. However, the sophisticated fabrication requirement of two-dimensional materials and the low capacity of one-dimensional channels hinder the broadening applications. We introduce a method to manipulate a three-dimensional topological material to host a large number of one-dimensional topological edge channels utilizing surface anisotropy. Taking ZrTe5 as a model system, we realize a highly anisotropic surface due to the synergistic effect of the lattice geometry and Coulomb interaction, and achieve massive one-dimensional topological edge channels -- confirmed by electronic characterization using angle-resolved photoemission spectroscopy, in combination with first-principles calculations. Our work provides a new avenue to engineer the topological properties of three-dimensional materials through nanoscale tunning of surface morphology and opens up a promising prospect for the development of low-power-consumption electronic nano devices based on one-dimensional topological edge channels.

cond-mat.mes-hall↗

arXiv2023

The Influence of Dimensionality on the Charge Density Wave Transition and Its Application on Mid-infrared Photodetection

Two-dimensional charge density wave (CDW) materials received much attention for high responsivity and broadband photodetection in recent years, due to their collective electron transport and narrow bandgap. However, the high dark current density problem hinders their real application. Here we report a sharp CDW transition in quasi-1D (TaSe4)2I, and apply it for broadband photodetection. Especially at mid-infrared region, the device shows both high photo responsivity of 1.18e3 A/W and large light on-off ratio of 80, which is superior than 2D CDW TaS2 and most reported low-dimensional materials. The fact for such high performance lies on two aspects. One is the much lower dark current density resulted from the pseudo gap associated with 1D Luttinger liquid state, which is supported by finite size scaling of nonlinear I-V at variable temperatures and occurrence of 1D structural phase transition consolidated by In-situ Raman spectroscopy. The other is the high photocurrent associated with the Frohlich superconductivity state, manifested by an ultrasensitive switching, which can be only accessible in 1D CDW materials, in agreement with our density functional theory calculation. Our work thus reveals the pivotal role of dimensionality in CDW phase transition, and paves a way for implementing highly sensitive broadband photodetector.

cond-mat.mtrl-sci↗

arXiv2023

Unlocking Hidden Spins in Centrosymmetric SnSe2 by Vacancy-Controlled Spin-Orbit Scattering

Spin current generation and manipulation remain the key challenge of spintronics, in which relativistic spinorbit coupling (SOC) play a ubiquitous role. In this letter, we demonstrate that hidden Rashba spins in the non-magnetic, centrosymmetric lattice of multilayer SnSe2 can be efficiently activated by spin-orbit scattering introduced by Se vacancies. Via vacancy scattering, conduction electrons with hidden spin-momentum locked polarizations acquire out-of-plane magnetization components, which effectively break the chiral symmetry between the two Se sublattices of an SnSe2 monolayer when electron spins start precession in the strong built-in Rashba SOC field. The resulting spin separations are manifested in quantum transport as vacancy concentrationand temperature-dependent crossovers from weak antilocalization (WAL) to weak localization (WL), with the distinctive spin relaxation mechanism of the Dyakonov-Perel type. Our study shows the great potential of twodimensional systems with hidden-spin textures for spintronics.

cond-mat.mes-hall↗

arXiv2022

Direct observation of topological surface state in the topological superconductor 2M-WS2

The quantum spin Hall (QSH) effect has attracted extensive research interest because of the potential applications in spintronics and quantum computing, which is attributable to two conducting edge channels with opposite spin polarization and the quantized electronic conductance of 2e2/h. Recently, 2M-WS2, a new stable phase of transition metal dichalcogenides with a 2M structure showing an identical layer configuration to that of the monolayer 1T' TMDs, was suggested to be a QSH insulator as well as a superconductor with critical transition temperature around 8 K. Here, high-resolution angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES are applied to investigate the electronic and spin structure of the topological surface states (TSS) in the superconducting 2M-WS2. The TSS exhibits characteristic spin-momentum-locking behavior, suggesting the existence of long-sought nontrivial Z2 topological states therein. We expect that 2M-WS2 with co-existing superconductivity and TSS might host the promising Majorana bound states.

cond-mat.supr-con↗

arXiv2022

Designing Ultra-Flat Bands in Twisted Bilayer Materials at Large Twist Angles without specific degree

Inter-twisted bilayers of two-dimensional (2D) materials can host low-energy flat bands, which offer opportunity to investigate many intriguing physics associated with strong electron correlations. In the existing systems, ultra-flat bands only emerge at very small twist angles less than a few degrees, which poses challenge for experimental study and practical applications. Here, we propose a new design principle to achieve low-energy ultra-flat bands with increased twist angles. The key condition is to have a 2D semiconducting material with large energy difference of band edges controlled by stacking. We show that the interlayer interaction leads to defect-like states under twisting, which forms a flat band in the semiconducting band gap with dispersion strongly suppressed by the large energy barriers in the moire superlattice even for large twist angles. We explicitly demonstrate our idea in bilayer alpha-In2Se3 and bilayer InSe. For bilayer alpha-In2Se3, we show that a twist angle -13.2 degree is sufficient to achieve the band flatness comparable to that of twist bilayer graphene at the magic angle -1.1 degree. In addition, the appearance of ultra-flat bands here is not sensitive to the twist angle as in bilayer graphene, and it can be further controlled by external gate fields. Our finding provides a new route to achieve ultra-flat bands other than reducing the twist angles and paves the way towards engineering such flat bands in a large family of 2D materials.

physics.comp-ph↗

arXiv2021

Metamagnetic Transitions in Few-Layer CrOCl Controlled by Magnetic Anisotropy Flipping

The pivotal role of magnetic anisotropy in stabilising two-dimensional (2D) magnetism has been widely accepted, however, direct correlation between magnetic anisotropy and long-range magnetic ordering in the 2D limit is yet to be explored. Here, using angle- and temperature-dependent tunnelling magnetoresistance, we report unprecedented metamagnetic phase transitions in atomically-thin CrOCl, triggered by magnetic easy-axis flipping instead of the conventional spin flop mechanism. Few-layer CrOCl tunnelling devices of various thicknesses consistently show an in-plane antiferromagnetic (AFM) ground state with the easy axis aligned along the Cr-O-Cr direction (b-axis). Strikingly, with the presence of a magnetic field perpendicular to the easy-axis (H||c), magnetization of CrOCl does not follow the prevalent spin rotation and saturation pattern, but rather exhibits an easy-axis flipping from the in-plane to out-of-plane directions. Such magnetic anisotropy controlled metamagnetic phase transitions are manifested by a drastic upturn in tun- nelling current, which shows anomalous shifts towards higher H when temperature increases. By 2D mapping of tunnelling currents as a function of both temperature and H, we determine a unique ferrimagnetic state with a superstructure periodicity of five unit cells after the field-induced metam- agnetic transitions. The feasibility to control 2D magnetism by manipulating magnetic anisotropy may open enormous opportunities in spin-based device applications.

cond-mat.str-el↗

arXiv2021

Anisotropic Berry phase in the Dirac nodal-line semimetal ZrSiS: The effect of spin-orbit coupling

The topological nodal-line semimetals (NLSMs) possess a loop of Dirac nodes in the k space with linear dispersion, different from the point nodes in Dirac/Weyl semimetals. While the quantum transport associated with the topologically nontrivial Dirac fermions has been investigated extensively, features uniquely associated with the extended nodal lines remain to be demonstrated. Here, we investigate the quantum oscillations (QOs) in the nodal-line semimetal ZrSiS, with the electron transport along the c axis, and magnetic field rotating in the ab plane. The extremal orbits identified through the field orientation dependence of the QOs interlock with the nodal line, leading to a nonzero Berry phase. Most importantly, the Berry phase shows a significant dependence on the magnetic field orientation, which we argue to be due to the finite spin-orbit coupling gap. Our results demonstrate the importance of the spin-orbit coupling and the nodal-line dispersion in understanding the quantum transport of NLSMs.

cond-mat.mtrl-sci↗

arXiv2020

Two-dimensional CoSe structures: Intrinsic magnetism, strain-tunable anisotropic valleys, magnetic Weyl point, and antiferromagnetic metal state

The interplay between magnetism, band topology, and electronic correlation in low dimensions has been a fascinating subject of research. Here, we propose two-dimensional (2D) material systems which demonstrate such an interesting interplay. Based on first-principles calculations and structural search algorithms, we identify three lowest energy 2D CoSe structures, termed as the $α$-, $β$-, and $γ$-CoSe. {We show that $α$- and $β$-CoSe are two rare examples of 2D antiferromagnetic metals, which are related to their Fermi surfaces nesting features, and meanwhile, $γ$-CoSe is a ferromagnetic metal. They possess a range of interesting physical properties, including anisotropic valleys connected by crystalline symmetries, strain-tunable valley polarization, strain-induced metal-semiconductor and/or magnetic phase transitions, as well as topological band features such as the magnetic Weyl point and the magnetic Weyl loop. Remarkably, all the topological features here are robust against spin-orbit coupling.} Some experimental aspects of our predictions have been discussed.

cond-mat.mtrl-sci↗

arXiv2020

Doping-induced superconductivity in the topological semimetal Mo5Si3

Chemical doping of topological materials may provide a possible route for realizing topological superconductivity. However, all such cases known so far are based on chalcogenides. Here we report the discovery of superconductivity induced by Re doping in the topological semimetal Mo$_{5}$Si$_{3}$ with a tetragonal structure. Partial substitution of Re for Mo in Mo$_{5-x}$Re$_{x}$Si$_{3}$ results in an anisotropic shrinkage of the unit cell up to the solubility limit of approximately $x$ = 2. Over a wide doping range (0.5 $\leq$ $x$ $\leq$ 2), these silicides are found to be weakly coupled superconductors with a fully isotropic gap. $T_{\rm c}$ increases monotonically with $x$ from 1.67 K to 5.78 K, the latter of which is the highest among superconductors of the same structural type. This trend in $T_{\rm c}$ correlates well with the variation of the number of valence electrons, and is mainly ascribed to the enhancement of electron-phonon coupling. In addition, band structure calculations reveal that superconducting Mo$_{5-x}$Re$_{x}$Si$_{3}$ exhibits nontrivial band topology characterized by $Z_{2}$ invariants (1;000) or (1;111) depending on the Re doping level. Our results suggest that transition metal silicides are a fertile ground for the exploration of candidate topological superconductors.

cond-mat.supr-con↗

arXiv2020

Manipulating Giant Rashba Valley Splitting and Quantum Hall States in Few-Layer Black Arsenic by Electrostatic Gating

Exciting phenomena may emerge in non-centrosymmetric two-dimensional (2D) electronic systems when spin-orbit coupling (SOC) interplays dynamically with Coulomb interactions, band topology, and external modulating forces, etc. Here, we report illuminating synergetic effects between SOC and Stark in centrosymmetric few-layer black arsenic (BAs), manifested as giant Rashba valley splitting and exotic quantum Hall states (QHS) reversibly controlled by electrostatic gating. The unusual finding is rooted in the puckering square lattice of BAs, in which heavy $4p$ orbitals form highly asymmetric $Γ$ valley with the $p_{z}$ symmetry and $D$ valleys of the $p_{x}$ origin, located at the Brillouin zone (BZ) center and near the time reversal invariant momenta of $X$, respectively. When the structure inversion symmetry is broken by perpendicular electric field, giant Rashba SOC is activated for the $p_{x}$ bands to produce strong spin-polarized $D^{+}$ and $D^{-}$ valleys related by time-reversal symmetry, coexisting with weak $Γ$ Rashba bands constrained by the $p_{z}$ symmetry. Intriguingly, strong Stark effect shows the same $p_{x}$-orbital selectiveness for $D$, collectively shifting the valence band maximum of $D^{\pm}$ valleys to exceed the $Γ$ pockets. Such an orchestrating effect between SOC and Stark allows us to realize gate-tunable spin valley manipulations for 2D hole gas, as revealed by unconventional magnetic field triggered even-to-odd transitions in QHS. For electron doping, the quantization of the $Γ$ Rashba bands is characterized by peculiar density-dependent transitions in band topology from two parabolic valleys to a unique inner-outer helical structure when charge carrier concentrations increase.

cond-mat.mes-hall↗

arXiv2020

Highly anisotropic two-dimensional metal in monolayer MoOCl$_2$

Anisotropy is a general feature in materials. Strong anisotropy could lead to interesting physical properties and useful applications. Here, based on first-principles calculations and theoretical analysis, we predict a stable two-dimensional (2D) material---the monolayer MoOCl$_2$, and show that it possesses intriguing properties related to its high anisotropy. Monolayer MoOCl$_2$ can be readily exfoliated from the van der Waals layered bulk, which has already been synthesized. We show that a high in-plane anisotropy manifests in the structural, phononic, mechanical, electronic, and optical properties of monolayer MoOCl$_2$. The material is a metal with highly anisotropic Fermi surfaces, giving rise to open orbits at the Fermi level, which can be probed in magneto-transport. Remarkably, the combination of high anisotropy and metallic character makes monolayer MoOCl$_2$ an almost ideal hyperbolic material. It has two very wide hyperbolic frequency windows from 0.41 eV (99 THz) to 2.90 eV (701 THz), and from 3.63 eV (878 THz) to 5.54 eV (1340 THz). The former window has a large overlap with the visible spectrum, and the dissipation for most part of this window is very small. The window can be further tuned by the applied strain, such that at a chosen frequency, a transition between elliptic and hyperbolic character can be induced by strain. Our work discovers a highly anisotropic 2D metal with extraordinary properties, which holds great potential for electronic and optical applications.

cond-mat.mtrl-sci↗

arXiv2020

Nonvolatile ferroelectric control of topological states in 2D heterostructures

Quantum spin Hall (QSH) insulator materials feature topologically protected edge states that can drastically reduce dissipation and are useful for the next-generation electronics. However, the nonvolatile control of topological edge state is still a challenge. In this paper, based on first-principles calculations, the switchable topological states are found in the van der Waals (vdW) heterostructures consisting of two dimensional (2D) Bi(111) bilayer (BL) and α-In2Se3 by reversing the electric polarization of the ferroelectric α-In2Se3. The topological switching results from the different charge transfer associated with the two opposite polarization states of α-In2Se3. This new topological switching mechanism has the unique advantages of being fully electrical as well as nonvolatile. Our finding provides an unprecedented approach to realize ferroelectric control of topological states in 2D materials, which will have great potential for applications in topological nanoscale electronics.

cond-mat.mtrl-sci↗

arXiv2020

Tunable Topological Energy Bands in 2D Dialkali-Metal Monoxides

2D materials with nontrivial energy bands are highly desirable for exploring various topological phases of matter, as low dimensionality opens unprecedented opportunities for manipulating the quantum states. Here, it is reported that monolayer (ML) dialkali-metal monoxides, in the well-known 2H-MoS$_2$ type lattice, host multiple symmetry-protected topological phases with emergent fermions, which can be effectively tuned by strain engineering. Based on first-principles calculations, it is found that in the equilibrium state, ML Na$_2$O is a 2D double Weyl semimetal, while ML K$_2$O is a 2D pseudospin-1 metal. These exotic topological states exhibit a range of fascinating effects, including universal optical absorbance, super Klein tunneling, and super collimation effect. By introducing biaxial or uniaxial strain, a series of quantum phase transitions between 2D double Weyl semimetal, 2D Dirac semimetal, 2D pseudospin-1 metal, and semiconductor phases can be realized. The results suggest monolayer dialkali-metal monoxides as a promising platform to explore fascinating physical phenomena associated with novel 2D emergent fermions.

cond-mat.mes-hall↗

arXiv2020

Origin and Electronic Behavior of Improper Ferroelectricity in AB2 (A=Cr, Mo, W; B=S, Se, Te) Transition Metal Dichalcogenides

Persistent electrical polarized states are fundamentally important to the electric industry as they can be used in the non-volatile memory, the artificial neuromorphic network, and negative capacitors, making ultralow energy consumption electronic devises possible. With the recent development in low dimensional ferroelectric materials, emerging 2D out-of-plane ferroelectric materials like MoTe2 have great potential for future development. Despite previous phenomenological studies, the underlying microscopic origin of ferroelectricity is still missing. Here, using density functional theory and Wannier function methods, we reveal that the origin of ferroelectricity of these transition metal dichalcogenides comes from the Jahn taller effect and followed by a covalent bonding between transition metal atoms. Moreover, the atypical electronic behavior of these monolayer AB2 (A=Cr, Mo, W; B=S, Se, Te) TMDs compare to traditional improper ferroelectrics hints a strong electronic origin of the polarization, suitable for future industrial applications.

cond-mat.mes-hall↗

arXiv2019

Superconducting phase diagram and nontrivial band topology of structurally modulated Sn$_{1-x}$Sb$_{x}$

We report the discovery of superconductivity in binary alloy Sn$_{1-x}$Sb$_{x}$ with $x$ in the range of 0.43 to 0.6, which possesses a modulated rhombohedral structure due to the incommensurate ordering of Sn and Sb layers along the $c$-axis. The specific heat measurements indicate a weakly coupled, fully gapped superconducting state in this homogeneity range with a maximum bulk $T_{\rm c}$ of 1.58 K at $x$ = 0.46, though the electronic specific heat and Hall coefficients remain nearly $x$-independent. The nonmonotonic dependence of the bulk $T_{\rm c}$ is discussed in relation to the effects of Sb-layer intercalation between the [Sn$_{4}$Sb$_{3}$] seven-layer lamellae that are the essential building block for superconductivity. On the other hand, a zero-resistivity transition is found to take place well above the bulk superconducting transition, and the corresponding $T_{\rm c}$ increases monotonically with $x$ from 2.06 K to 3.29 K. This contrast, together with the uniform elements distribution revealed by energy dispersive x-ray mapping, implies that the resistive transition is due to the strain effect at the grain boundary rather than the compositional inhomogeneity. The first-principles calculations on the representative composition Sn$_{4}$Sb$_{3}$ ($x$ = 0.43) indicate that it is topologically nontrivial similar to Sb, but with different Z$_{2}$ invariants (0;111). Our results not only identify a new superconducting region in the Sn-Sb phase diagram, but also provide a viable platform to study the interplay between structural modulation, nontrivial band topology and superconductivity.

cond-mat.supr-con↗