arXiv subjects

Yunkai Guo

Publications and source records attributed to Yunkai Guo.

5 recordsLinked to original sources

arXiv2025

Lattice-decoupled rotatable stripe-like charge order within the strange metal phase of 2M-WS2

In quantum materials, charge orders typically stabilize in specific crystallographic orientations, though their formation mechanisms may vary. Here, using low-temperature scanning tunneling microscopy (STM), we discover a lattice-decoupled rotatable stripe-like charge order coexisting with superconductivity in 2M-WS2. The charge order manifests five distinct orientations across different sample regions, yet maintains an identical wavelength. This directional decoupling from host lattice challenges existing paradigms. First-principles calculations of phonon spectra and nesting function fail to explain the ordering mechanism. Intriguingly, the transition temperature of the charge orders exhibits spatial variations (21-46 K), coinciding with the temperature range of the recently reported strange metal phase in this material. This correlation suggests that the interplay between strong electronic correlations and electron-phonon coupling must be critically evaluated to elucidate the emergence of this unconventional charge order.

cond-mat.supr-con↗

arXiv2025

Topological surface states in {\gamma}-PtBi$_2$ evidenced by scanning tunneling microscopy

For the application of topological materials, the specific location of their topological surface states with respect to the Fermi level are important. {\gamma}-PtBi2 has been demonstrated to be a Weyl semimetal possessing superconducting Fermi arcs by photoemission spectroscopy. However, the evidence of its topological surface states is lacking by scanning tunneling microscopy (STM), which should be rather sensitive to detect the surface states. Here, we show multiple STM evidences for the existence of topological surface states in {\gamma}-PtBi2. We observe not only the step-edge and screw dislocation induced quasiparticle interference fringes, originating from the electron scatterings between the Fermi arcs of {\gamma}-PtBi2, but also the back-scattering prohibition related to the spin-flip process, which is the direct evidence for the topological nature of the surface states. Moreover, we demonstrate that the topological surface states are precisely located over a narrow energy range near the Fermi level, within which sharply enhanced intensity and slow spatial decay of quasiparticle interference are observed.

cond-mat.supr-con↗

arXiv2025

Interfacial superconductivity and a Se-vacancy ordered insulating phase in the FeSe/PbOx heterostructures

The discovery of high-temperature superconductivity in FeSe/SrTiO3 has sparked significant interests in exploring new superconducting systems with engineered interfaces. Here, using molecular beam epitaxy growth, we successfully fabricate FeSe/PbOx heterostructures and discover superconductivities in three different monolayer FeSe-related interfaces. We observe superconducting gaps of 13~14 meV in the monolayer FeSe films grown on two different phases of PbOx. Moreover, we discover a new insulating Fe10Se9 phase with an ordered $\sqrt{5}\times\sqrt{5}$ Se-vacancy structure. Our first-principles calculation suggests that this new insulating phase originates from electronic correlation. Intriguingly, an additional monolayer FeSe film grown on the insulating Fe10Se9 also exhibits superconductivity with the gap size of 5 meV. Our results suggest that the work function differences between the monolayer FeSe and the substrates, which can induce band bending and charge transfer, are crucial for the interfacial superconductivity.

cond-mat.supr-con↗

arXiv2024

Strain and twist angle driven electronic structure evolution in twisted bilayer graphene

In twisted bilayer graphene (TBG) devices, local strains frequently coexist and intertwine with the twist-angle-dependent moir\'e superlattice, significantly influencing the electronic properties of TBG, yet their combined effects remain incompletely understood. Here, using low-temperature scanning tunneling microscopy, we study a TBG device exhibiting both a continuous twist-angle gradient from 0.35{\deg} to 1.30{\deg} and spatially varying strain fields, spanning the first (1.1{\deg}), second (0.5{\deg}) and third (0.3{\deg}) magic angles. We visualize the evolution of flat and remote bands in energy and real space with atomic resolution. Near the first magic angle, we discover an anomalous spectral weight transfer between the two flat band peaks, signifying the role of strain and electronic correlations, as further evidenced by an unusual spatial dispersion of these peaks within a moir\'e unit cell. In contrast, remote band peak energy offers a strain-insensitive indicator of the local twist angle. Structural analysis further reveals non-negligible shear strain across the sample. All observations are quantitatively reproduced by a continuum model that incorporates heterostrain and a self-consistent Hartree potential, revealing the critical but unexplored role of shear strain in shaping the low-energy electronic landscape of TBG.

cond-mat.mes-hall↗

arXiv2021

Evolution of electronic structure in pristine and hole-doped kagome metal RbV$_3$Sb$_5$

We report on in situ low-temperature (4 K) scanning tunneling microscope measurements of atomic and electronic structures of the cleaved surfaces of an alkali-based kagome metal RbV$_3$Sb$_5$ single crystals. We find that the dominant pristine surface exhibits Rb-1x1 structure, in which a unique unidirectional $\sqrt{3}a_0$ charge order is discovered. As the sample temperature slightly rises, Rb-$\sqrt{3}$x1 and Rb-$\sqrt{3}$x$\sqrt{3}$ reconstructions form due to desorption of surface Rb atoms. Our conductance mapping results demonstrate that Rb desorption not only gives rise to hole doping, but also renormalizes the electronic band structures. Surprisingly, we find a ubiquitous gap opening near the Fermi level in tunneling spectra on all the surfaces despite their large differences of hole-carrier concentration, indicating an orbital-selective band reconstruction in RbV$_3$Sb$_5$.

cond-mat.supr-con↗