SearcharxivSearch

arXiv subjects

Yunlin Zheng

Publications and source records attributed to Yunlin Zheng.

5 recordsLinked to original sources

Synthesis and Transfer of Freestanding Strain-Engineered Vertically Aligned Nanocomposite Thin Films

The recent development of freestanding oxide thin films opens up exciting opportunities for the design of novel heterostructures with enhanced functionalities. Here, we explore the fabrication of membranes consisting of dense arrays of ultrathin CoxNi1-x nanowires epitaxially embedded in a SrTiO3 matrix. Through combined x-ray absorption spectroscopy, x-ray resonant magnetic scattering, x-ray diffraction and magnetooptical experiments, we show how a SrVO3-mediated lift-off process can be used to create and transfer these membranes while simultaneously preserving the structural and chemical integrity of the self-assembled, metallic CoxNi1-x nanopillars. With this approach, the large axial deformation of the embedded nanostructures is kept intact and, as a direct consequence, the magnetic properties of the nano-composite thin films remain largely unaltered after substrate removal. Our findings thus highlight a novel route for the synthesis of freestanding, strain-engineered vertically aligned heterostructures and pave the way for their future integration into spintronic and optomagnetic devices.

cond-mat.mtrl-sci

Nonreciprocal Spin-Wave Propagation in Anisotropy-Graded Iron Films Prepared by Nitrogen Implantation

Gradual modification of the magnetic properties in ferromagnetic films has recently been proposed as an effective method to channel and control spin waves for the development of new functionalities in magnonic devices. Here, we investigate graded FeN films prepared by low-dose nitrogen implantation of Fe epitaxial thin films. Combining Brillouin light scattering measurements and a spin-wave theoretical approach, we show that nitrogen implantation induces a graded profile of both the in-plane and the perpendicular anisotropies along the film thickness. This graduation leads to a significant modification of the spin-wave spatial localization and generates a marked frequency asymmetry in the spin-wave dispersion. Moreover, we find that the anisotropy profile, and as a consequence the dispersion relation, can be tuned on changing the implantation dose, opening a way for the potential use of the graded Fe-N films in magnonic applications.

cond-mat.mes-hall

Multipacting mitigation by atomic layer deposition: the case study of Titanium Nitride

This study investigates the use of Atomic Layer deposition (ALD) to mitigate multipacting phenomena inside superconducting radio frequency (SRF) cavities used in particle accelerators. The unique ALD capability to control the film thickness down to the atomic level on arbitrary complex shape objects enable the fine tuning of TiN film resistivity and total electron emission yield (TEEY) from coupons to devices. This level of control allows us to adequately choose a TiN film thickness that provide both a high resistivity to prevent Ohmic losses and low TEEY to mitigate multipacting for the application of interest. The methodology presented in this work can be scaled to other domain and devices subject to RF fields in vacuum and sensitive to multipacting or electron discharge processes with their own requirements in resistivities and TEEY values

physics.app-ph

Self-biased magnetoelectric Ni/LiNbO3/Ni for body embedded electronic energy harvesters

In this study, we present the fabrication and characterization of Ni/LiNbO3/Ni trilayers using RF sputtering. These trilayers exhibit thick Ni layers (10 microns) and excellent adherence to the substrate, enabling high magnetoelectric coefficients. By engineering the magnetic anisotropy of Nickel through anisotropic thermal residual stress induced during fabrication, and by selecting a carefully chosen cut angle for the LiNbO3 substrate, we achieved a self-biased behavior. We demonstrate that these trilayers can power medical implant devices remotely using a small AC magnetic field excitation, thereby eliminating the need for a DC magnetic field and bulky magnetic field sources. The results highlight the potential of these trilayers for the wireless and non-invasive powering of medical implants. This work contributes to the advancement of magnetoelectric materials and their applications in healthcare technology.

cond-mat.mtrl-sci

Native defect association in beta-Ga2O3 enables room-temperature p-type conductivity

The room temperature hole conductivity of the ultra wide bandgap semiconductor beta Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type beta-Ga2O3 thin films grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) exhibit Rho = 50000Ohm.cm resistivity at room temperature. A low activation energy of conductivity as Ea2=170 meV was determined, associated to the oxygen - gallium native acceptor defect complex. Further, taking advantage of cation (Zn) doping, the conductivity of Ga2O3:Zn film was remarkably increased by three orders of magnitude, showing a long-time stable room-temperature hole conductivity with the conductivity activation energy of around 86 meV.

cond-mat.mtrl-sci