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Yuriy V. Pershin

Publications and source records attributed to Yuriy V. Pershin.

50 records · Page 3Linked to original sources

Optically-Induced Suppression of Spin Relaxation in Two-Dimensional Electron Systems with Rashba Interaction

A pulsed technique for electrons in 2D systems, in some ways analogous to spin echo in nuclear magnetic resonance, is discussed. We show that a sequence of optical below-band gap pulses can be used to suppress the electron spin relaxation due to the D'yakonov-Perel' spin relaxation mechanism. The spin relaxation time is calculated for several pulse sequences within a Monte Carlo simulation scheme. The maximum of spin relaxation time as a function of magnitude/width of the pulses corresponds to $π$-pulse. It is important that even relatively distant pulses efficiently suppress spin relaxation.

cond-mat.mes-hall↗

Radiation-induced current in quantum wires with side-coupled nano-rings

Photocurrent generation is studied in a system composed of a quantum wire with side-coupled quantum rings. The current generation results from the interplay of the particular geometry of the system and the use of circularly polarized radiation. We study the energy-momentum conservation for optical transitions involving electrons moving forwards and backwards in the wire. Due to the lack of time-reversal symmetry in the radiation, the optical transitions depend on the direction of motion of the electrons, leading to a current at zero bias voltage. The photocurrent increases with the number of rings within a wide range of physical parameters. A weak non-linear dependence of the current in the number of rings, related to quantum interference effects, is also predicted. This geometry suggests a scalable method for the generation of sizeable photocurrents based on nanoscale components.

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Persistent and radiation-induced currents in distorted quantum rings

Persistent and radiation-induced currents in distorted narrow quantum rings are theoretically investigated. We show that ring distorsions can be described using a geometrical potential term. We analyse the effect of this term on the current induced by a magnetic flux (persistent current) and by a polarized coherent electromagnetic field (radiation-induced current). The strongest effects in persistent currents are observed for distorted rings with a small number of electrons. The distortion smoothes the current oscillations as a function of the magnetic flux and changes the temperature dependence of the current amplitude. For radiation-induced currents, the distortion induces an ac component in the current and affects its dependence on the radiation frequency and intensity.

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Spin Photovoltaic Effect in Quantum Wires with Rashba Interaction

We propose a mechanism for spin polarized photocurrent generation in quantum wires. The effect is due to the combined effect of Rashba spin-orbit interaction, external magnetic field and microwave radiation. The time-independent interactions in the wire give rise to a spectrum asymmetry in k-space. The microwave radiation induces transitions between spin-splitted subbands, and, due to the peculiar energy dispersion relation, charge and spin currents are generated at zero bias voltage. We demonstrate that the generation of pure spin currents is possible under an appropriate choice of external control parameters.

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Polarization of Nuclear Spins from the Conductance of Quantum Wire

We devise an approach to measure the polarization of nuclear spins via conductance measurements. Specifically, we study the combined effect of external magnetic field, nuclear spin polarization, and Rashba spin-orbit interaction on the conductance of a quantum wire. Nonequilibrium nuclear spin polarization affects the electron energy spectrum making it time-dependent. Changes in the extremal points of the spectrum result in time-dependence of the conductance. The conductance oscillation pattern can be used to obtain information about the amplitude of the nuclear spin polarization and extract the characteristic time scales of the nuclear spin subsystem.

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Influence of Nuclear Spin Polarization on Quantum Wire Conductance

In this work, we study a possibility to measure the transverse and longitudinal relaxation times of a collection of polarized nuclear spins located in the region of a quantum wire via its conductance. The interplay of an external in-plane magnetic field, spin-orbit interaction, and the changing field of the spin-polarized nuclei cause the conductance of the quantum wire to evolve in time. We show that it is possible to extract the transverse and longitudinal relaxation times of the spin-polarized nuclei from the time dependence of the conductance.

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Dynamics of Spin Relaxation near the Edge of Two-Dimensional Electron Gas

We report calculations of spin relaxation dynamics of two-dimensional electron gas with spin-orbit interaction at the edge region. It is found that the relaxation of spin polarization near the edge is more slow than relaxation in the bulk. That results finally in the spin accumulation at the edge. Time dependence of spin polarization density is calculated analytically and numerically. The mechanism of slower spin relaxation near the edge is related to electrons reflections from the boundary and the lack of the translation symmetry. These reflections partially compensate electron spin precession generated by spin-orbit interaction, consequently making the spin polarization near the edge long living. This effect is accompanied by spin polarization oscillations and spin polarization transfer from the perpendicular to in-plane component.

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Drift-Diffusion Approach to Spin-Polarized Transport

We develop a drift-diffusion equation that describes electron spin polarization density in two-dimensional electron systems. In our approach, superpositions of spin-up and spin-down states are taken into account, what distinguishes our model from the traditional two-component drift-diffusion approximation. The Dresselhaus and Rashba spin-orbit coupling mechanisms are incorporated into consideration, as well as an applied electric field. The derived equation is applied to the modelling of relaxation of homogeneous spin polarization. Our results are consistent with previous studies.

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Effect of Spin-Orbit Interaction and In-Plane Magnetic Field on the Conductance of a Quasi-One-Dimensional System

We study the effect of spin-orbit interaction and in-plane effective magnetic field on the conductance of a quasi-one-dimensional ballistic electron system. The effective magnetic field includes the externally applied field, as well as the field due to polarized nuclear spins. The interplay of the spin-orbit interaction with effective magnetic field significantly modifies the band structure, producing additional sub-band extrema and energy gaps, introducing the dependence of the sub-band energies on the field direction. We generalize the Landauer formula at finite temperatures to incorporate these special features of the dispersion relation. The obtained formula describes the conductance of a ballistic conductor with an arbitrary dispersion relation.

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Long-Lived Spin Coherence States

We study evolution of electron spin coherence having non-homogeneous direction of spin polarization vector in semiconductor heterostructures. It is found that the electron spin relaxation time due to the D'yakonov-Perel' relaxation mechanism essentially depends on the initial spin polarization distribution. This effect has its origin in the coherent spin precession of electrons diffusing in the same direction. We predict a long spin relaxation time of a novel structure: a spin coherence standing wave and discuss its experimental realization.

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Slow Spin Relaxation in Two-Dimensional Electron Systems with Antidots

We report a Monte Carlo investigation of the effect of a lattice of antidots on spin relaxation in twodimensional electron systems. The spin relaxation time is calculated as a function of geometrical parameters describing the antidot lattice, namely, the antidot radius and the distance between their centers. It is shown that spin polarization relaxation can be efficiently suppressed by the chaotic spatial motion due to the antidot lattice. This phenomenon offers a new approach to spin coherence manipulation in spintronics devices.

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Propagation of Spin-Polarized Electrons Through Interfaces Separating Differently Doped Semiconductor Regions

High degree of electron spin polarization is of crucial importance in operation of spintronic devices. We study the propagation of spin-polarized electrons through a boundary between two n-type semiconductor regions with different doping levels. We assume that inhomogeneous spin polarization is created/injected locally and driven through the boundary by the electric field. The electric field distribution and spin polarization distribution are calculated within a two-component drift-diffusion transport model. We show that an initially created narrow region of spin polarization can be further compressed and amplified near the boundary. Since the boundary involves variation of doping but no real interface between two semiconductor materials, no significant spin-polarization loss is expected. The proposed mechanism will be therefore useful in designing new spintronic devices.

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Focusing of Spin Polarization in Semiconductors by Inhomogeneous Doping

We study the evolution and distribution of non-equilibrium electron spin polarization in n-type semiconductors within the two-component drift-diffusion model in an applied electric field. Propagation of spin-polarized electrons through a boundary between two semiconductor regions with different doping levels is considered. We assume that inhomogeneous spin polarization is created locally and driven through the boundary by the electric field. The electric field distribution and spin polarization distribution are calculated numerically. We show that an initially created narrow region of spin polarization can be further compressed and amplified near the boundary. Since the boundary involves variation of doping but no real interface between two semiconductor materials, no significant spin-polarization loss is expected. The proposed mechanism will be therefore useful in designing new spintronic devices.

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Spin Relaxation of Conduction Electrons in Semiconductors Due to Interaction with Nuclear Spins

Relaxation of conduction electron spins in a semiconductor owing to the hyperfine interaction with spin-1/2 nuclei, in zero applied magnetic field, is investigated. We calculate the electron spin relaxation time scales, in order to evaluate the importance of this relaxation mechanism. Master equations for the electron spin density matrix are derived and solved. Polarized nuclear spins can be used to polarize the electrons in spintronic devices.

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