arXiv subjects

Yusheng Hou

Publications and source records attributed to Yusheng Hou.

At least 37 records · Page 2Linked to original sources

arXiv2023

Coexistence of zigzag antiferromagnetic order and superconductivity in compressed NiPSe3

NiPSe3 is regarded as a bandwidth-controlled Mott insulator, distinct from the widely studied Mott insulating magnetic graphene MPSe3 (M = Mn and Fe) family. By employing high-pressure synchrotron X-ray diffraction, we observe two structural transitions as a function of pressure. With the help of first-principles calculations, we discover the antiferromagnetic (AFM) moment directions of NiPSe3 switch from out-of-plane to in-plane and the honeycomb layers slide relative to each other at the first structural transition. The in-plane AFM order persists until the second structural transition, whereupon the two-dimensional (2D) structure assumes a more three-dimensional (3D) character. A bandwidth-controlled Mott insulator-metal transition (IMT) occurs between the two structural transitions at 8.0 GPa, concomitant with the emergence of superconductivity with 4.8 K. The superconductivity in NiPSe3 emerging in the 2D monoclinic phase coexists with the in-plane AFM order and continues into the 3D trigonal phase. Our electronic structure calculations reveal that the Mott IMT and superconductivity in NiPSe3 are both closely related to the enhanced Se2- 4p and Ni2+ 3d electronic hybridizations under pressure. From these results, we construct the temperature-pressure electronic phase diagram of NiPSe3, revealing rich physics and many similarities with copper oxide and iron-based superconductors.

cond-mat.supr-con↗

arXiv2022

Tunable Quantum Anomalous Hall Effects in Ferromagnetic van der Waals Heterostructures

The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic first-principles calculations, we predict that the in-plane magnetization induced QAHE with Chern numbers C = $\pm$1 and the out-of-plane magnetization induced QAHE with high Chern numbers C = $\pm$3 can be realized in a single material candidate, which is composed of van der Waals (vdW) coupled Bi and MnBi$_2$Te$_4$ monolayers. The switching between different phases of QAHE can be controllable by multiple ways, such as applying strain or (weak) magnetic field or twisting the vdW materials. The prediction of an experimentally available material system hosting robust, highly tunable QAHE will stimulate great research interest in the field. Our work opens a new avenue for the realization of tunable QAHE and provides a practical material platform for the development of topological electronics.

physics.comp-ph↗

arXiv2022

Chern insulators and high Curie temperature Dirac half-metal in two-dimensional metal-organic frameworks

Two-dimensional (2D) magnetic materials with nontrivial topological states have drawn considerable attention recently. Among them, 2D metal-organic frameworks (MOFs) are standing out due to their advantages, such as the easy synthesis in practice and less sensitivity to oxidation that are distinctly different from inorganic materials. By means of density-functional theory calculations, we systematically investigate the electronic and topological properties of a class of 2D MOFs X(C21H15N3) (X = transition metal element from 3d to 5d). Excitingly, we find that X(C21H15N3) (X = Ti, Zr, Ag, Au) are Chern insulators with sizable band gaps (~7.1 meV). By studying a four-band effective model, it is revealed that the Chern insulator phase in X(C21H15N3) (X = Ti, Zr, Ag, Au) is caused cooperatively by the band inversion of the p orbitals of the C21H15N3 molecule and the intrinsic ferromagnetism of X(C21H15N3). Additionally, Mn(C21H15N3) is a Dirac half-metal ferromagnet with a high Curie temperature up to 156 K. Our work demonstrates that 2D MOFs X(C21H15N3) are good platforms for realizing Quantum anomalous Hall effect and designing novel spintronic devices based on half-metals with high-speed and long-distance spin transport.

cond-mat.mtrl-sci↗

arXiv2022

Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2

We report high pressure studies on the C-type antiferromagnetic semiconductor EuTe2 up to 36.0 GPa. A structural transition from the I4/mcm to C2/m space group is identified at ~16 GPa. Superconductivity is discovered above ~5 GPa in both the I4/mcm and C2/m space groups. In the low-pressure phase (< 16 GPa), the antiferromagnetic transition temperature is enhanced with increasing pressure due to the enhanced magnetic exchange interactions. Magnetoresistance measurements indicate an interplay between the local moments of Eu2+ and the conduction electrons of Te 5p orbits. The upper critical field of the superconductivity is well above the Pauli limit. Across the structural transition to the high-pressure phase (> 16 GPa), EuTe2 becomes nonmagnetic and the superconducting transition temperature evolves smoothly with the upper critical field below the Pauli limit. Therefore, the high upper critical field of EuTe2 in the low-pressure phase is due to the exchange field compensation effect of the Eu magnetic order and the superconductivity in both structures may arise in the framework of the BCS theory.

cond-mat.supr-con↗

arXiv2022

Multifunctional Two-dimensional van der Waals Janus Magnet Cr-based Dichalcogenide Halides

Two-dimensional van der Waals Janus materials and their heterostructures offer fertile platforms for designing fascinating functionalities. Here, by means of systematic first-principles studies on van der Waals Janus monolayer Cr-based dichalcogenide halides CrYX (Y=S, Se, Te; X=Cl, Br, I), we find that CrSX (X=Cl, Br, I) are the very desirable high TC ferromagnetic semiconductors with an out-of-plane magnetization. Excitingly, by the benefit of the large magnetic moments on ligand S2- anions, the sought-after large-gap quantum anomalous Hall effect and sizable valley splitting can be achieved through the magnetic proximity effect in van der Waals heterostructures CrSBr/Bi2Se3/CrSBr and MoTe2/CrSBr, respectively. Additionally, we show that large Dzyaloshinskii-Moriya interactions give rise to skyrmion states in CrTeX (X=Cl, Br, I) under external magnetic fields. Our work reveals that two-dimensional Janus magnet Cr-based dichalcogenide halides have appealing multifunctionalities in the applications of topological electronic and valleytronic devices.

cond-mat.mtrl-sci↗

arXiv2022

Origin of the Type-II Weyl state in topological antiferromagnetic YbMnBi2

Recently, the topological nature of an antiferromagnet YbMnBi2 has been controversial. YbMnBi2 is regarded as a candidate of Type-II Weyl semimetals with magnetic moments of Mn atoms canting about 10° in some studies but as a Dirac semimetal without canting in others. By means of systematical density functional theory calculations, we show the perfect YbMnBi2 bulk has a collinear antiferromagnetic ordering and, naturally, it is a Dirac semimetal. Considering the vital role of magnetic moment canting in generating the Type-II Weyl state, we artificially cant the magnetic moments of Mn atoms and find that YbMnBi2 enters into the Type-II Weyl state from about 2°. Inspired by this and taking into account the possible defects in experiments, we suggest that Bi vacancies in Mn-Bi-Mn bonds, which produce sizable Dzyaloshinskii-Moriya interactions and thereby cant the magnetic moments of Mn atoms, can tune the topological nature of YbMnBi2 from Dirac semimetals to Type-II Weyl semimetals. Our work unveils the possible underlying mechanism for the Type-II Weyl state in YbMnBi2, providing insights into the Weyl state in other magnetic topological materials.

cond-mat.mtrl-sci↗

arXiv2021

Various magnetism of the compressed antiferromagnetic topological insulator EuSn2As2

We report a comprehensive high-pressure study on the antiferromagnetic topological insulator EuSn2As2 up to 21.1 GPa through measurements of synchrotron x-ray diffraction, electrical resistance, magnetic resistance, and Hall transports combined with first-principles calculations. No evident trace of a structural phase transition is detected. The Neel temperatures determined from resistance are increased from 24 to 77 K under pressure, which is resulted from the enhanced magnetic exchange couplings between Eu2+ ions yielded by our first-principles calculations. The negative magnetoresistance of EuSn2As2 persists to higher temperatures accordantly. However, the enhancement of the observed Néel temperatures deviates from the calculations obviously above 10.0 GPa. In addition, the magnitude of the magnetoresistance, the Hall coefficients, and the charge carrier densities show abrupt changes between 6.9 to 10.0 GPa. The abrupt changes probably originate from a pressure induced valence change of Eu ions from a divalent state to a divalent and trivalent mixed state. Our results provide insights into variation of the magnetism of EuSn2As2 and similar antiferromagnetic topological insulators under pressure.

cond-mat.str-el↗

arXiv2021

Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

Two-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.

cond-mat.mtrl-sci↗

arXiv2020

Multifunctional Lateral Transition-Metal Disulfides Heterojunctions

The intrinsic spin-dependent transport properties of two types of lateral VS2|MoS2 heterojunctions are systematically investigated using first-principles calculations, and their various nanodevices with novel properties are designed. The lateral VS2|MoS2 heterojunction diodes show a perfect rectifying effect and are promising for the applications of Schottky diodes. A large spin-polarization ratio is observed for the A-type device and pure spin-mediated current is then realized. The gate voltage significantly tunes the current and rectification ratio of their field-effect transistors (FETs). In addition, they all have sensitive photoresponse to blue light, and could be used as photodetector and photovoltaic device. Moreover, they generate the effective thermally-driven current when a temperature gratitude appears between the two terminals, suggesting them as potential thermoelectric materials. Hence, the lateral VS2|MoS2 heterojunctions show a multifunctional nature and have various potential applications in spintronics, optoelectronics, and spin caloritronics.

cond-mat.mtrl-sci↗

arXiv2020

Evaluating the exfoliation of two-dimensional materials with a Green's function surface model

Previous methods for the evaluation of the exfoliation of two-dimensional (2D) layered materials have drawbacks in computational efficiency and are unable to describe cases with semi-infinite substrates. Based on a Green's function surface (GFS) model, here we develop a new approach to efficiently determine the tendency of exfoliation of 2D materials from their bulk crystals or semi-infinite substrates. By constructing appropriate surface configurations, we may calculate the exfoliation energy more precisely and quickly than the traditional way with the slab model. Furthermore, the GFS approach can provide angle-resolved photoemission spectroscopy (ARPES) of surface systems for direct comparison with experimental data. Our findings indicate that the GFS approach is powerful for studies of 2D materials and various surface problems.

cond-mat.mtrl-sci↗

arXiv2019

MoB2:a new multifunctional transition metal diboride monolayer

Several layered transition metal borides can now be realized by a simple and general fabrication method [Fokwa et al.,Adv. Mater. 2018, 30, 1704181],inspiring our interest to transition metal borides monolayer. Here, we predict a new two-dimensional (2D) transition metal diboride MoB2 monolayer (ML) and study its intrinsic mechanical, thermal, electronic, and transport properties. The MoB2 ML has isotropic mechanic properties along the zigzag and armchair directions with a large Young's stiffness, and has an ultralow room-temperature thermal conductivity. The Mo atoms dominate the metallic nature of MoB2 ML. It shows an obvious electrical anisotropy and a current-limiting behavior. Our findings suggest that MoB2 ML is a promising multifunctional material used in ultrathin high-strength mechanical materials, heat insulating materials, electrical-anisotropy-based materials, and current limiters. It is helpful for the experimentalists to further prepare and utilize the transition metal diboride 2D materials.

cond-mat.mtrl-sci↗

arXiv2019

Two-dimensional Ferromagnetic van der Waals CrX3 (X=Cl, Br, I) Monolayers with Enhanced Anisotropy and Curie Temperature

Among the recently widely studied van der Waals layered magnets CrX3 (X=Cl, Br, I), CrCl3 monolayer (ML) is particularly puzzling as it is solely shown by experiments to have an in-plane magnetic easy axis and, furthermore, all of previous first-principles calculation results contradict this. Through systematical first-principles calculations,we unveil that its in-plane shape anisotropy that dominates over its weak perpendicular magnetocrystalline anisotropy is responsible for the in-plane magnetic easy axis of CrCl3 ML. To tune the in-plane ferromagnetism of CrCl3 ML into the desirable perpendicular one, we propose substituting Cr with isovalent tungsten (W). We find that CrWCl6 has a strong perpendicular magnetic anisotropy and a high Curie temperature up to 76 K. Our work not only gives insight into understanding the two-dimensional ferromagnetism of van der Waals MLs but also sheds new light on engineering their performances for nanodevices.

cond-mat.mtrl-sci↗

arXiv2019

Unveiling the Electric-current-limiting and Photodetection Effect in Two-dimensional Hydrogenated Borophene

The electronic transport and photoelectric properties of hydrogenated borophene B4H4, which was realized in a recent experiment by Nishino [J. Am. Chem. Soc. 139, 13761 (2017)], are systematically investigated using the density functional theory and non-equilibrium Green's function methods. We find that B4H4 exhibits a perfect current-limiting effect and has high (along the zigzag direction) and low (along the armchair one) optional levels due to its strong electrical anisotropy. Moreover, B4H4 can generate sizable photocurrents under illumination, with strong photoelectronic response to blue/green light along the zigzag/armchair direction. Our work demonstrates that B4H4 is promising for the applications of current limiter and photodetectors.

cond-mat.mes-hall↗

arXiv2019

Multifunctional 2D CuSe monolayer nanodevice

In a very recent experimental work [Gao et al., 2018 Adv. Mater. 30, 1707055], a graphene-like CuSe monolayer was realized. Motivated by this success, we performed first-principles calculations to investigate its electronic transport and photoelectronic properties. We find that the CuSe ML shows a strong electrical anisotropy, and its current-voltage (I-V) curves along the zigzag and armchair directions are noticeably different. The CuSe ML also displays a useful negative differential resistance (NDR) effect along the both directions when the bias is beyond 1.0 V. Moreover, it has a large photon absorption to orange light. Our study suggests that CuSe ML is a multifunctional material and has various potential applications in electrical-anisotropy-based, NDR-based, and even optical nanodevices.

cond-mat.mes-hall↗

arXiv2019

Probing Magnetism in Insulating Cr2Ge2Te6 by Induced Anomalous Hall Effect in Pt

Two-dimensional ferromagnet Cr2Ge2Te6 (CGT) is so resistive below its Curie temperature that probing its magnetism by electrical transport becomes extremely difficult. By forming heterostructures with Pt, however, we observe clear anomalous Hall effect (AHE) in 5 nm thick Pt deposited on thin (< 50 nm) exfoliated flakes of CGT. The AHE hysteresis loops persist to ~ 60 K, which matches well to the Curie temperature of CGT obtained from the bulk magnetization measurements. The slanted AHE loops with a narrow opening indicate magnetic domain formation, which is confirmed by low-temperature magnetic force microscopy (MFM) imaging. These results clearly demonstrate that CGT imprints its magnetization in the AHE signal of the Pt layer. Density functional theory calculations of CGT/Pt heterostructures suggest that the induced ferromagnetism in Pt may be primarily responsible for the observed AHE. Our results establish a powerful way of investigating magnetism in 2D insulating ferromagnets which can potentially work for monolayer devices.

cond-mat.mes-hall↗

arXiv2018

Negative differential conductance effect and electrical anisotropy of 2D ZrB2 monolayers

Two-dimensional (2D) metal-diboride ZrB2 monolayers was predicted theoretically as a stable new electronic material [A. Lopez-Bezanilla, Phys. Rev. Mater., 2018, 2, 011002 (R)]. Here, we investigate its electronic transport properties along the zigzag (z-ZrB2) and armchair (a-ZrB2) directions, using the density functional theory and non-equilibrium Green's function methods. Under low biases, the 2D ZrB2 shows a similar electrical transport along zigzag and armchair directions as electric current propagates mostly via the metallic Zr-Zr bonds. However, it shows an electrical anistropy under high biases, and its I-V curves along zigzag and armchair directions diverge as the bias voltage is higher than 1.4 V, as more directional B-B transmission channels are opened. Importantly, both z-ZrB2 and a-ZrB2 show a pronounced negative differential conductance (NDC) effect and hence they can be promising for the use in NDC-based nanodevices.

cond-mat.mes-hall↗

arXiv2018

How does the electric current propagate through the fully-hydrogenated borophene?

We study the electronic transport properties of two-dimensional (2D) fully-hydrogenated borophene (namely, borophane), using the density functional theory and non-equilibrium Green's function approaches. Borophane shows a perfect electrical transport anisotropy and is promising for applications. Along the peak- or equivalently the valley-parallel direction, the 2D borophane exhibits a metallic characteristic and its current-voltage (I-V) curve shows a linear behavior, corresponding to the ON state in borophane-based nano-switch. In this case, electrons mainly propagate via the B-B bonds along the linear boron chains. In contrast, the electron transmission is almost forbidden along the perpendicular buckled direction (i.e., the OFF state), due to its semi-conductor property. Our work demonstrates that 2D borophane could combine the metal and semiconductor features and can be a promising candidate of nano-switching materials with stable structure and high ON/OFF ratio.

cond-mat.mtrl-sci↗

arXiv2018

Magnetize Topological Surface States of Bi2Se3 with a CrI3 Monolayer

To magnetize surfaces of topological insulators without damaging their topological feature is a crucial step for the realization of the quantum anomalous Hall effect (QAHE), and still remains as a challenging task. Through density functional calculations, we found that adsorption of a two-dimensional van der Waals (2D-vdW) ferromagnetic insulator CrI3 monolayer can create a sizable spin splitting at the Dirac point of the topological surface states of Bi2Se3 films. Furthermore, general rules that connect different quantum and topological parameters are established through model analyses. This work provides a useful guideline for the realization of QAHE at high temperature in heterostructures of 2D-vdW magnetic monolayers and topological insulators.

cond-mat.mes-hall↗