arXiv subjects

Yuta Seo

Publications and source records attributed to Yuta Seo.

5 recordsLinked to original sources

arXiv2026

Twist-configured moire-moire reconstruction governs diverse commensurate double-moire phases in twisted bilayer graphene on h-BN

The coexistence of multiple moire lattices in van der Waals heterostructures raises a fundamental question: how do distinct moire patterns interact and reconstruct? Here, we investigate twisted bilayer graphene (tBG) on hexagonal boron nitride (h-BN), where tBG and graphene/h-BN moire structures coexist, using conductive atomic force microscopy combined with continuum-model simulations. We show that reconstruction between these moire lattices-moire-moire reconstruction-manifests across multiple length scales, giving rise to diverse commensurate double-moire phases. Locally, the stacking registry between the two moire lattices is uniquely selected by the global twist configuration (helical or alternate), mediated by rotational relaxation of the shared graphene layer. This registry, together with twist angle and strain, governs commensurate domains from C3z-symmetric to strained symmetry-modified structures. These results establish moire-moire reconstruction as a general framework for engineering structural and electronic order -- including theoretically predicted topological flat bands below the magic angle -- in multilayer moire materials.

cond-mat.mtrl-sci↗

arXiv2025

Magnetic-field-induced insulating behavior in black phosphorus under pressure

We investigated the out-of-plane magnetoresistance of pressurized black phosphorus (BP) with a longitudinal field configuration. Despite the absence of the Lorentz force in the present configuration, we observed a significant enhancement of magnetoresistance marked with a clear onset field in both the semiconducting (1.1 GPa) and semimetallic (1.3 GPa) phases. The insulating behavior observed near the semiconductor-semimetal transitio pressure is possibly associated with emergence of an excitonic phase, which has been suggested in a recent theoretical study. BP under finely tuned pressure can be a candidate to realize the field-induced electronic phase transition in a moderate magnetic field below 9 T.

cond-mat.str-el↗

arXiv2025

Direct observation of band structure modifications from monolayer WSe2 to Janus WSSe

Janus monolayer transition metal dichalcogenides (TMDs), created by post-growth substitution of the top chalcogen layer, represent a new direction for engineering 2D crystal properties. However, their rapid ambient degradation and the difficulty of obtaining large-area monolayer samples have limited the available experimental probes, leaving their detailed electronic structure near the Fermi level largely unexplored. In this work, by performing micro-focused angle-resolved photoemission spectroscopy ({\mu}-ARPES) on an identical sample transformed from monolayer WSe2 to Janus WSSe via a H2 plasma-assisted chalcogen-exchange method, we reveal the evolution of its electronic band structure. We observe ARPES signature consistent with the Rashba-type spin splitting due to broken horizontal mirror symmetry, and a significant upward shift of the highest valence band at the {\Gamma}-point by approximately 160 meV. These direct observations clarify the key electronic modifications that govern the material's properties and provide a pathway for band engineering in Janus TMDs.

cond-mat.mtrl-sci↗

arXiv2020

Selective Etching of Hexagonal Boron Nitride by High-Pressure CF4 Plasma for Individual One-dimensional Ohmic Contacts to Graphene Layers

We describe a technique for making one-dimensional ohmic contacts to individual graphene layers encapsulated in hexagonal boron nitride (h-BN) using CF4 and O2 plasmas. The high etch selectivity of h-BN against graphene (>1000) is achieved by increasing the plasma pressure, which enables etching of h-BN, while graphene acts as an etch stop to protect underlying h-BN. A low-pressure O2 plasma anisotropically etches graphene in the vertical direction, which exposes graphene edges at h-BN sidewalls. Despite the O2 plasma bombardment, the lower h-BN layer functions as an insulating layer. Thus, this method allows us to pattern metal electrodes on h-BN over a second graphene layer. Subsequent electron-beam lithography and evaporation fabricate metal contacts at the graphene edges that are active down to cryogenic temperatures. This fabrication method is demonstrated by the preparation of a graphene Hall bar with a graphite back-gate and double bilayer-graphene Hall bar devices. The high flexibility of the device geometries enabled by this method creates access to a variety of experiments on electrostatically coupled graphene layers.

cond-mat.mtrl-sci↗

arXiv2019

Deep-Learning-Based Image Segmentation Integrated with Optical Microscopy for Automatically Searching for Two-Dimensional Materials

Deep-learning algorithms enable precise image recognition based on high-dimensional hierarchical image features. Here, we report the development and implementation of a deep-learning-based image segmentation algorithm in an autonomous robotic system to search for two-dimensional (2D) materials. We trained the neural network based on Mask-RCNN on annotated optical microscope images of 2D materials (graphene, hBN, MoS2, and WTe2). The inference algorithm is run on a 1024 x 1024 px2 optical microscope images for 200 ms, enabling the real-time detection of 2D materials. The detection process is robust against changes in the microscopy conditions, such as illumination and color balance, which obviates the parameter-tuning process required for conventional rule-based detection algorithms. Integrating the algorithm with a motorized optical microscope enables the automated searching and cataloging of 2D materials. This development will allow researchers to utilize unlimited amounts of 2D materials simply by exfoliating and running the automated searching process.

eess.IV↗