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Yuto Kinoshita

Publications and source records attributed to Yuto Kinoshita.

15 recordsLinked to original sources

High-Field Terahertz Spin Resonance in Cr$_2$O$_3$ above the Spin-Flop Transition

We report single-shot terahertz time-domain spectroscopy of Cr$_2$O$_3$ in pulsed magnetic fields up to 30 T. Well above the spin-flop field, in the 20-30 T range, the resonance frequency exhibits a nearly linear field dependence with a slope of ~22 GHz/T, smaller than the 28 GHz/T reported from low-field measurements. This reduction is insensitive to temperature and to a 15° field tilt, suggesting an intrinsic high-field property.

cond-mat.mtrl-sci

High-field magneto-optical imaging of superconducting critical states beyond 10 T using a paramagnetic garnet sensor

Spatially resolved characterization of the critical current density Jc in superconductors under high magnetic fields is crucial for both fundamental understanding and practical applications. However, conventional techniques primarily provide bulk-averaged values, making it difficult to resolve local variations of Jc, especially in high magnetic fields. In this work, we develop a magneto-optical imaging (MOI) technique that enables visualization of superconducting critical states in steady magnetic fields up to 13 T. This is achieved by employing a paramagnetic Nd-garnet indicator combined with a polarizing microscope system. Using this method, we directly image the magnetic flux distribution in a bulk single crystal of an iron-based superconductor Ba(Fe1-xCox)2As2 (x = 0.075) at 12 K and 20 K across the entire sample area (approximately 1 mm). From the measured magnetic field distributions, we quantitatively reconstruct the spatial distribution of the critical current density. The extracted field dependence of Jc is in good agreement with that obtained from conventional magnetization measurements. Furthermore, we demonstrate vector mapping of current flow within the sample by converting the magnetic field distribution into local current-density distributions. Our results establish high-field MOI as a powerful approach for spatially resolved evaluation of superconducting critical states and provide a new pathway for investigating inhomogeneous current transport in superconductors under high magnetic fields.

cond-mat.supr-con

Symmetry-resolved magnetoelastoresistance in multivalley bismuth

We report a symmetry-resolved study of longitudinal magnetoelastoresistance (MER) in the multivalley material bismuth, with the current, uniaxial stress, and magnetic field all applied along the binary axis. The magnitude of MER exhibits a steep increase at low magnetic fields, reaches a peak, and then gradually decreases at higher fields. By decomposing the strain response into symmetric and antisymmetric symmetry channels, we reveal contrasting magnetic field dependencies. Despite the overall non-monotonic field dependence of the MER, the symmetric component remains nearly constant under magnetic fields, suggesting that the valleys in bismuth preserve a rigid-band nature against strain even in the presence of a magnetic field. In contrast, the antisymmetric component, associated with mobility anisotropy, dominates the MER response in a magnetic field. At low magnetic fields, the applied field effectively modifies the apparent mobility of each valley, leading to an enhancement in the magnitude of the antisymmetric MER. At higher fields, field-induced valley polarization further modifies this mobility anisotropy by altering the contributions from each valley's mobility, accounting for the moderate suppression of the MER. These findings demonstrate that symmetry-resolved MER serves as a powerful probe of valley-dependent electronic states and provides a fundamental platform for understanding the interplay between magnetic field, strain, and charge transport.

cond-mat.mes-hall

Pseudogap and Fermi arc induced by Fermi surface nesting in a centrosymmetric skyrmion magnet

Skyrmions in noncentrosymmetric materials are believed to occur due to the Dzyaloshinskii-Moriya interaction. By contrast, the skyrmion formation mechanism in centrosymmetric materials remains elusive. Here, we reveal the intrinsic electronic structure of the centrosymmetric GdRu2Si2 by selectively measuring magnetic domains using angle-resolved photoemission spectroscopy (ARPES). We found robust Fermi surface (FS) nesting, consistent with the magnetic modulation q-vector detected by the previous resonant x-ray scattering measurements. The pseudogap opens at the nested FS portions, which vary for different magnetic domains. The anomalous pseudogap disconnects the FS to generate Fermi arcs with twofold symmetry. These results indicate that the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction plays a decisive role in generating the screw spin modulation responsible for the skyrmion formation in GdRu2Si2. Furthermore, we demonstrate the flexible nature of magnetism in GdRu2Si2 by manipulating magnetic domains with magnetic field and temperature cyclings, providing potential future applications for data storage and processing devices.

cond-mat.mtrl-sci

Piezoelectric Transition in a Nonpyroelectric Gyroidal Metal-Organic Framework

Among the thirty-two crystallographic point groups, 432 is the only one that lacks an inversion center but does not exhibit piezoelectricity. A gyroidal structure belongs to point group 432 and shows characteristic physical properties attributed to its distinctive strong isotropic network. Here, we investigate a gyroidal cobalt oxalate metal-organic framework (MOF) with disordered orientations of SO4 tetrahedra. Synchrotron X-ray diffraction experiments using a single crystal reveal a cubic-to-cubic structural phase transition at TS = 120 K. This transition involves a change in the point group from nonpiezoelectric 432 to piezoelectric 23. The symmetry change arises from the ordering of distorted SO4 molecules, leading to a three-dimensional helical arrangement of electric dipole moments. Furthermore, pyroelectric current measurements using polycrystalline pellet samples reveal that electric polarization emerges below TS depending on the magnitude of the pelletizing pressure, demonstrating piezoelectricity. The gyroidal MOF offers an opportunity to explore unique dielectric properties induced by the helical ordering of molecules and structural flexibility.

cond-mat.mtrl-sci

Novel Easy-Axis Switching through Metamagnetism in CeSb$_2$

A novel magnetic field-induced switching of the magnetization easy axis has been discovered in the layered compound CeSb$_2$, which crystallizes in an orthorhombic structure with nearly identical lattice constants along the a- and b-axes, giving it a tetragonal-like appearance. When a magnetic field is applied along an orthorhombic in-plane axis at 4.2 K, magnetization increases abruptly around 34 T, followed by a hysteresis loop upon decreasing the field. Subsequent measurements reveal a significantly enhanced magnetization, indicative of a switch of the magnetization easy axis. Conversely, the other orthorhombic in-plane axis becomes the magnetization hard axis. Surprisingly, the easy axis is switchable by changing the field direction to the other orthorhombic in-plane axis. Moreover, this memory effect is stable up to room temperature. Polarized light microscope images have visually revealed domain formation of the as-cast samples and domain rearrangement by magnetic fields. This intriguing axis-conversion phenomenon is a novel magnetic shape memory effect for heat cycles up to room temperature. It is attributed to the specific in-plane Ce-pantograph networks in CeSb$_2$.

cond-mat.str-el

Removal of excess iron by annealing processes and emergence of bulk superconductivity in sulfur-substituted FeTe

There are several strategies to discover new superconductors. Growing new materials and applying high pressures can be the classic ways since superconductivity was found. Also, chemical processing, such as annealing, is another way to induce superconductivity in a non-superconducting material. Here, we show chemical processing effects in the non-superconducting material, sulfur-substituted FeTe. It has been known that superconductivity in S-substituted FeTe is induced by O$_2$ annealing. We revealed that hydrochloric acid etching and vacuum annealing for O$_2$-annealed samples made the quality of superconductivity higher by several physical property measurements. Furthermore, we visualized the superconducting regions by a magneto-optical imaging technique, indicating that the superconductivity in the processed sample was bulk. In this sample, we confirmed that the concentration of excess iron was reduced compared to that in the as-grown state. These results provide an important route to bulk superconductivity in S-substituted FeTe and its related iron-based compounds.

cond-mat.supr-con

Direct Observation of Vortices and Antivortices Generation in Phase-Separated Superconductor Sn-Pb Solder

Quantized vortices in type-II superconductors provide insights into the mechanisms of superconductivity. However, the generation of antivortices, characterized by magnetization antiparallel to the external magnetic field, remains less understood. In this study, we investigate Sn-Pb solder, a superconductor with phase-separated Sn and Pb phases, and report the observation of both vortices and antivortices. Scanning SQUID (superconducting quantum interference device) microscopy revealed the presence of both vortices and antivortices, while magneto-optical imaging demonstrated flux avalanches. Our results demonstrate that Sn in Sn-Pb solder behaves as a type-II superconductor when magnetic fluxes are trapped, despite bulk Sn being a type-I superconductor with a transition temperature (TcSn) of 3.7 K. Our findings suggest that the size effect and proximity effect with Pb contribute synergistically to induce type-II superconductivity in Sn Notably, vortices were observed at temperatures as high as 5 K, exceeding the bulk TcSn. Furthermore, the interplay between the type-I superconducting Pb phase and the type-II superconducting Sn phase results in the generation of antivortices, providing a mechanism to accommodate excess magnetic flux. This study shed light on new research on composites combining type-I and type-II superconductors.

cond-mat.supr-con

Effects of strain-tunable valleys on charge transport in bismuth

The manipulation of the valley degree of freedom can boost the technological development of novel functional devices based on valleytronics. The current mainstream platform for valleytronics is to produce a monolayer with inversion asymmetry, in which the strain-band engineering through the substrates can serve to improve the performance of valley-based devices. However, pinpointing the effective role of strain is inevitable for the precise design of the desired valley structure. Here, we demonstrate the charge transport under continuously controllable external strain for bulk bismuth crystals with three equivalent electron valleys and one hole valley. The strain response of resistance, namely elastoresistance, exhibits the evolutions in both antisymmetric and symmetric channels with decreasing temperature. The elastoresistance behaviors mainly reflect the significant changes in valley density depending on the symmetry of induced strain, evidenced by our strain-dependent quantum oscillation measurements and first-principle band calculations under strain. These facts suggest the successful tune and evaluation of the valley populations through strain-dependent charge valley transport.

cond-mat.mtrl-sci

High-field immiscibility of electrons belonging to adjacent twinned bismuth crystals

Bulk bismuth has a complex Landau spectrum. The small effective masses and the large g-factors are anisotropic. The chemical potential drifts at high magnetic fields. Moreover, twin boundaries further complexify the interpretation of the data by producing extra anomalies in the extreme quantum limit. Here, we present a study of angle dependence of magnetoresistance up to 65 T in bismuth complemented with Nernst, ultrasound, and magneto-optic data. All observed anomalies can be explained in a single-particle picture of a sample consisting of two twinned crystals tilted by 108$^{\circ}$ and with two adjacent crystals keeping their own chemical potentials despite a shift between chemical potentials as large as 68 meV at 65 T. This implies an energy barrier between adjacent twinned crystals reminiscent of a metal-semiconductor Schottky barrier or a p-n junction. We argue that this barrier is built by accumulating charge carriers of opposite signs across a twin boundary.

cond-mat.mtrl-sci

Observation of nonvolatile magneto-thermal switching in superconductors

Applying a magnetic field to a solid changes its thermal-transport properties. Although such magneto-thermal-transport phenomena are usually small effects, giant magneto-thermal resistance has recently been observed in spintronic materials1,2 and superconductors3,4, opening up new possibilities in thermal management technologies. However, the thermal conductivity conventionally changes only when a magnetic field is applied due to the absence of nonvolatility, which limits potential applications of thermal switching devices5,6. Here, we report the observation of nonvolatile thermal switching that changes the thermal conductivity when a magnetic field is applied and retains the value even when the field is turned off. This unconventional magneto-thermal switching, surprisingly, arises in commercial Sn-Pb solders and is realized by phase-separated superconducting states and resultant nonuniform magnetic flux distributions. This result confirms the versatility of the observed phenomenon and aids the development of active solid-state thermal management devices.

cond-mat.mtrl-sci

Low-temperature hysteresis broadening emerging from domain-wall creep dynamics in a two-phase competing system

Hysteretic behaviour accompanies any first-order phase transition, forming a basis for many applications. However, its quantitative understanding remains challenging, and even a qualitative understanding of pronounced hysteresis broadening at low temperature, which is often observed in magnetic-field-induced first-order phase transition materials, is unclear. Here, we show that such pronounced hysteresis broadening emerges if the phase-front velocity during the first-order phase transition exhibits an activated behaviour as a function of both temperature and magnetic field. This is demonstrated by using real-space magnetic imaging techniques, for the magnetic-field-induced first-order phase transition between antiferromagnetic and ferrimagnetic phases in (Fe$_{0.95}$Zn$_{0.05}$)$_{2}$Mo$_{3}$O$_{8}$. When combined with the Kolmogorov-Avrami-Ishibashi model, the observed activated temperature- and field-dependences of the growth velocity of the emerging antiferromagnetic domain quantitatively reproduce the pronounced hysteresis broadening. Furthermore, the same approach also reproduces the field-sweep-rate dependence of the transition field observed in the experiment. Our findings thus provide a quantitative and comprehensive understanding of pronounced hysteresis broadening from the microscopic perspective of domain growth.

cond-mat.mtrl-sci

Domain Control by Adjusting Anisotropic Stress in Pyrochlore Oxide Cd2Re2O7

The 5d pyrochlore oxide Cd2Re2O7 exhibits successive phase transitions from a cubic pyrochlore structure (phase I) to a tetragonal structure without inversion symmetry below Ts1 of ~200 K (phase II) and further to another noncentrosymmetric tetragonal structure below Ts2 of ~120 K (phase III). The two low-temperature phases may be characterized by odd-parity multipolar orders induced by the Fermi liquid instability of the spin-orbit-coupled metal. To control the tetragonal domains generated by the transitions and to obtain a single-domain crystal for the measurements of anisotropic properties, we prepared single crystals with the (0 0 1) surface and applied biaxial and uniaxial stresses along the plane. Polarizing optical microscopy observations revealed that inducing a small strain of approximately 0.05% could flip the twin domains ferroelastically in a reversible fashion at low temperatures, which evidences that the tetragonal deformation switches at Ts2 between c > a for phase II and c < a for phase III. Resistivity measurements using single-domain crystals under uniaxial stress showed that the anisotropy was maximum at around Ts2 and turned over across Ts2: resistivity along the c axis is larger (smaller) than that along the a axis by ~25% for phase II (III) at around Ts2. These large anisotropies probably originate from spin-dependent scattering in the spin-split Fermi surfaces of the cluster electric toroidal quadrupolar phases of Cd2Re2O7.

cond-mat.mtrl-sci

Strong terahertz radiation via rapid polarization reduction in photoinduced ionic-to-neutral transition of tetrathiafulvalene-p-chloranil

Terahertz lights are usually generated through the optical rectification process within a femtosecond laser pulse in non-centrosymmetric materials. Here, we report a new generation mechanism of terahertz lights based upon a photoinduced phase transition (PIPT), in which an electronic structure is rapidly changed by a photoirradiation. When a ferroelectric organic molecular compound, tetrathiafulvalene-p-chloranil, is excited by a femtosecond laser pulse, the ionic-to-neutral transition is driven and simultaneously a strong terahertz radiation is produced. By analyzing the terahertz electric-field waveforms and their dependence on the polarization direction of the incident laser pulse, we demonstrate that the terahertz radiation originates from the ultrafast decrease of the spontaneous polarization in the photoinduced ionic-to-neutral transition. The efficiency of the observed terahertz radiation via the PIPT mechanism is found to be much higher than that via the optical rectification in the same material and in a typical terahertz emitter, ZnTe.

cond-mat.mtrl-sci

Terahertz radiation by subpicosecond spin-polarized photocurrent originating from Dirac electrons in a Rashba-type polar semiconductor

The spin-splitting energy bands induced by the relativistic spin-orbit interaction in solids provide a new opportunity to manipulate the spin-polarized electrons on the sub-picosecond time scale. Here, we report one such example in a bulk Rashba-type polar semiconductor BiTeBr. Strong terahertz electromagnetic waves are emitted after the resonant excitation of the interband transition between the Rashba-type spin-splitting energy bands with a femtosecond laser pulse circularly polarized. The phase of the emitted terahertz waves is reversed by switching the circular polarization. This suggests that the observed terahertz radiation originates from the subpicosecond spin-polarized photocurrents, which are generated by the asymmetric depopulation of the Dirac state. Our result provides a new way for the current-induced terahertz radiation and its phase control by the circular polarization of incident light without external electric fields.

cond-mat.str-el