arXiv subjects

Yuze Meng

Publications and source records attributed to Yuze Meng.

16 recordsLinked to original sources

arXiv2026

Layer-Hybridized Wigner Crystals in MoSe2/WS2 Moir\'e Superlattice

Transition metal dichalcogenide moir\'e heterobilayers with type-II band alignment provide a versatile platform for layer-polarized generalized Wigner crystals, in which strong Coulomb interactions drive charge ordering at fractional lattice fillings. With a finite interlayer band offset, an out-of-plane electric field can tune layer-resolved moir\'e bands through resonance and enable controllable interlayer hybridization. Although hybridized Mott insulators have been previously demonstrated, whether fractional charge-ordered states can survive such hybridization remains elusive. Here we drive an H-stacked MoSe2/WS2 moir\'e heterobilayer through a type-I-to-type-II band-alignment transition and realize layer-hybridized Mott insulator and generalized Wigner crystals. For fillings below one electron per moir\'e cell, tunneling delocalizes electrons and modifies Wigner crystallization. However, above one electron per cell, Coulomb repulsion overcomes tunneling and favors layer-separated occupation, stabilizing stronger charge-ordered states. These results establish electrically tunable hybridized moir\'e heterobilayers as a powerful platform for engineering correlated charge order and exploring fractional Chern phases and emergent magnetism.

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arXiv2025

Strong Correlation Driven Quadrupolar to Dipolar Exciton Transitions in a Trilayer Moir\'e Superlattice

The additional layer degree of freedom in trilayer moir\'e superlattices of transition metal dichalcogenides enables the emergence of novel excitonic species, such as quadrupolar excitons, which exhibit unique excitonic interactions and hold promise for realizing intriguing excitonic phases and their quantum phase transitions. Concurrently, the presence of strong electronic correlations in moir\'e superlattices, as exemplified by the observations of Mott insulators and generalized Wigner crystals, offers a direct route to manipulate these new excitonic states and resulting collective excitonic phases. Here, we demonstrate that strong exciton-exciton and electron-exciton interactions, both stemming from robust electron correlations, can be harnessed to controllably drive transitions between quadrupolar and dipolar excitons. This is achieved by tuning either the exciton density or electrostatic doping in a trilayer semiconducting moir\'e superlattice. Our findings not only advance the fundamental understanding of quadrupolar excitons but also usher in new avenues for exploring and engineering many-body quantum phenomena through novel correlated excitons in semiconducting moir\'e systems.

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arXiv2025

Realization of a Kondo Insulator in a Multilayer Moire Superlattice

Kondo insulators are a paradigmatic strongly correlated electron system, arising from the hybridization between itinerary conduction electrons and localized magnetic moments, which opens a gap in the band of conduction electrons. Traditionally, the known Kondo insulators are found in materials with f-electrons. Recent developments in two-dimensional (2D) moire systems provide a new approach to generate flat bands with strong electron correlation, which host localized moments at half filling. In this work, we demonstrate the realization of a Kondo insulator phase in a moire superlattice of monolayer WS2 / bilayer WSe2 which hosts a set of moire flat bands in the WSe2 layer interfacing the WS2 layer and dispersive bands in the other WSe2 layer. When both WSe2 layers are partially doped but with a total density of two holes per moire unit cell, an insulating state appears when the density of the moire band is below one hole per moire unit cell. The insulating state disappears above a certain threshold magnetic field and the system becomes metallic, which is a telltale signature of the Kondo insulator. The physics can be well explained by a periodic Anderson lattice model that includes both the on-site Coulomb repulsion in the moire flat band and the hybridization between moire flat and non-moire dispersive bands. Our results suggest that multilayer moire structures of transition metal dichalcogenides provide a tunable platform to simulate the Kondo insulator, which holds promise to tackle many critical open questions in the Kondo insulators.

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arXiv2024

Anomalously Enhanced Diffusivity of Moir\'e Excitons via Manipulating the Interplay with Correlated Electrons

Semiconducting transitional metal dichalcogenides (TMDCs) moir\'e superlattice provides an exciting platform for manipulating excitons. The in-situ control of moir\'e potential confined exciton would usher in unprecedented functions of excitonic devices but remains challenging. Meanwhile, as a dipolar composite boson, interlayer exciton in the type-II aligned TMDC moir\'e superlattice strongly interacts with fermionic charge carriers. Here, we demonstrate active manipulation of the exciton diffusivity by tuning their interplay with correlated carriers in moir\'e potentials. At fractional fillings where carriers are known to form generalized Wigner crystals, we observed suppressed diffusivity of exciton. In contrast, in Fermi liquid states where carriers dynamically populate all moir\'e traps, the repulsive carrier-exciton interaction can effectively reduce the moir\'e potential confinement seen by the exciton, leading to enhanced diffusivity with the increase of the carrier density. Notably, the exciton diffusivity is enhanced by orders of magnitude near the Mott insulator state, and the enhancement is much more pronounced for the 0-degree than the 60-degree aligned WS2/WSe2 heterobilayer due to the more localized nature of interlayer excitons. Our study inspires further engineering and controlling exotic excitonic states in TMDC moir\'e superlattices for fascinating quantum phenomena and novel excitonic devices.

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arXiv2023

Valley-polarized Exitonic Mott Insulator in WS2/WSe2 Moir\'e Superlattice

Strongly enhanced electron-electron interaction in semiconducting moir\'e superlattices formed by transition metal dichalcogenides (TMDCs) heterobilayers has led to a plethora of intriguing fermionic correlated states. Meanwhile, interlayer excitons in a type-II aligned TMDC heterobilayer moir\'e superlattice, with electrons and holes separated in different layers, inherit this enhanced interaction and strongly interact with each other, promising for realizing tunable correlated bosonic quasiparticles with valley degree of freedom. We employ photoluminescence spectroscopy to investigate the strong repulsion between interlayer excitons and correlated electrons in a WS2/WSe2 moir\'e superlattice and combine with theoretical calculations to reveal the spatial extent of interlayer excitons and the band hierarchy of correlated states. We further find that an excitonic Mott insulator state emerges when one interlayer exciton occupies one moir\'e cell, evidenced by emerging photoluminescence peaks under increased optical excitation power. Double occupancy of excitons in one unit cell requires overcoming the energy cost of exciton-exciton repulsion of about 30-40 meV, depending on the stacking configuration of the WS2/WSe2 heterobilayer. Further, the valley polarization of the excitonic Mott insulator state is enhanced by nearly one order of magnitude. Our study demonstrates the WS2/WSe2 moir\'e superlattice as a promising platform for engineering and exploring new correlated states of fermion, bosons, and a mixture of both.

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arXiv2023

Exciton Superposition across Moir\'e States in a Semiconducting Moir\'e Superlattice

Moir\'e superlattices of semiconducting transition metal dichalcogenides (TMDCs) enable unprecedented spatial control of electron wavefunctions in an artificial lattice with periodicities more than ten times larger than that of atomic crystals, leading to emerging quantum states with fascinating electronic and optical properties. The breaking of translational symmetry further introduces a new degree of freedom inside each moir\'e unit cell: high symmetry points of energy minima called moir\'e sites, behaving as spatially separated quantum dots. The superposition of a quasiparticle wavefunction between different moir\'e sites will enable a new platform for quantum information processing but is hindered by the suppressed electron tunneling between moir\'e sites. Here we demonstrate the superposition between two moir\'e sites by constructing an angle-aligned trilayer WSe2/monolayer WS2 moir\'e heterojunction. The two moir\'e sites with energy minimum allow the formation of two different interlayer excitons, with the hole residing in either moir\'e site of the first WSe2 layer interfacing the WS2 layer and the electron in the third WSe2 layer. An external electric field can drive the hybridization of either of the interlayer excitons with the intralayer excitons in the third WSe2 layer, realizing the continuous tuning of interlayer exciton hopping between two moir\'e sites. Therefore, a superposition of the two interlayer excitons localized at different moir\'e sites can be realized, which can be resolved in the electric-field-dependent optical reflectance spectra, distinctly different from that of the natural trilayer WSe2 in which the moir\'e modulation is absent. Our study illustrates a strategy of harnessing the new moir\'e site degree of freedom for quantum information science, a new direction of twistronics.

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arXiv2023

Quadrupolar Excitons and Hybridized Interlayer Mott Insulator in a Trilayer Moir\'e Superlattice

Transition metal dichalcogenide (TMDC) moir\'e superlattices, owing to the moir\'e flatbands and strong correlation, can host periodic electron crystals and fascinating correlated physics. The TMDC heterojunctions in the type-II alignment also enable long-lived interlayer excitons that are promising for correlated bosonic states, while the interaction is dictated by the asymmetry of the heterojunction. Here we demonstrate a new excitonic state, quadrupolar exciton, in a symmetric WSe2-WS2-WSe2 trilayer moir\'e superlattice. The quadrupolar excitons exhibit a quadratic dependence on the electric field, distinctively different from the linear Stark shift of the dipolar excitons in heterobilayers. This quadrupolar exciton stems from the hybridization of WSe2 valence moir\'e flatbands. The same mechanism also gives rise to an interlayer Mott insulator state, in which the two WSe2 layers share one hole laterally confined in one moir\'e unit cell. In contrast, the hole occupation probability in each layer can be continuously tuned via an out-of-plane electric field, reaching 100% in the top or bottom WSe2 under a large electric field, accompanying the transition from quadrupolar excitons to dipolar excitons. Our work demonstrates a trilayer moir\'e system as a new exciting playground for realizing novel correlated states and engineering quantum phase transitions.

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arXiv2019

Giant Valley-Zeeman Splitting from Spin-Singlet and Spin-Triplet Interlayer Excitons in WSe2/MoSe2 Heterostructure

Transition metal dichalcogenides (TMDCs) heterostructure with a type II alignment hosts unique interlayer excitons with the possibility of spin-triplet and spin-singlet states. However, the associated spectroscopy signatures remain elusive, strongly hindering the understanding of the Moire potential modulation of the interlayer exciton. In this work, we unambiguously identify the spin-singlet and spin-triplet interlayer excitons in the WSe2/MoSe2 hetero-bilayer with a 60-degree twist angle through the gate- and magnetic field-dependent photoluminescence spectroscopy. Both the singlet and triplet interlayer excitons show giant valley-Zeeman splitting between the K and K' valleys, a result of the large Lande g-factor of the singlet interlayer exciton and triplet interlayer exciton, which are experimentally determined to be ~ 10.7 and ~ 15.2, respectively, in good agreement with theoretical expectation. The PL from the singlet and triplet interlayer excitons show opposite helicities, determined by the atomic registry. Helicity-resolved photoluminescence excitation (PLE) spectroscopy study shows that both singlet and triplet interlayer excitons are highly valley-polarized at the resonant excitation, with the valley polarization of the singlet interlayer exciton approaches unity at ~ 20 K. The highly valley-polarized singlet and triplet interlayer excitons with giant valley-Zeeman splitting inspire future applications in spintronics and valleytronics.

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arXiv2019

Momentum-Dark Intervalley Exciton in Monolayer Tungsten Diselenide Brightened via Chiral Phonon

Inversion symmetry breaking and three-fold rotation symmetry grant the valley degree of freedom to the robust exciton in monolayer transition metal dichalcogenides (TMDCs), which can be exploited for valleytronics applications. However, the short lifetime of the exciton significantly constrains the possible applications. In contrast, dark exciton could be long-lived but does not necessarily possess the valley degree of freedom. In this work, we report the identification of the momentum-dark, intervalley exciton in monolayer WSe2 through low-temperature magneto-photoluminescence (PL) spectra. Interestingly, the intervalley exciton is brightened through the emission of a chiral phonon at the corners of the Brillouin zone (K point), and the pseudoangular momentum (PAM) of the phonon is transferred to the emitted photon to preserve the valley information. The chiral phonon energy is determined to be ~ 23 meV, based on the experimentally extracted exchange interaction (~ 7 meV), in excellent agreement with the theoretical expectation of 24.6 meV. The long-lived intervalley exciton with valley degree of freedom adds an exciting quasiparticle for valleytronics, and the coupling between the chiral phonon and intervalley exciton furnishes a venue for valley spin manipulation.

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arXiv2019

Direct Observation of Gate Tunable Dark Trions in Monolayer WSe2

Spin-forbidden intravalley dark exciton in tungsten-based transition metal dichalcogenides (TMDCs), owing to its unique spin texture and long lifetime, has attracted intense research interest. Here, we show that we can control the dark exciton electrostatically by dressing it with one free electron or free hole, forming the dark trions. The existence of the dark trions is suggested by the unique magneto-photoluminescence spectroscopy pattern of the boron nitride (BN) encapsulated monolayer WSe2 device at low temperature. The unambiguous evidence of the dark trions is further obtained by directly resolving the radiation pattern of the dark trions through back focal plane imaging. The dark trions possess binding energy of ~ 15 meV, and it inherits the long lifetime and large g-factor from the dark exciton. Interestingly, under the out-of-plane magnetic field, dressing the dark exciton with one free electron or hole results in distinctively different valley polarization of the emitted phonon, a result of the different intervalley scattering mechanism for the electron and hole. Finally, the lifetime of the positive dark trion can be further tuned from ~ 50 to ~ 215 ps by controlling the gate voltage. The gate tunable dark trions ushers in new opportunities for excitonic optoelectronics and valleytronics.

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arXiv2019

Emerging Photoluminescence from the Dark-Exciton Phonon Replica in Monolayer WSe2

Tungsten-based monolayer transition metal dichalcogenides host a long-lived dark exciton, an electron-hole pair in a spin-triplet configuration. The long lifetime and unique spin properties of the dark exciton provide exciting opportunities to explore light-matter interactions beyond electric dipole transitions. Here we demonstrate that the coupling of the dark exciton and an optically silent chiral phonon enables the intrinsic photoluminescence of the dark-exciton replica in monolayer WSe2. Gate and magnetic-field dependent PL measurements unveil a circularly-polarized replica peak located below the dark exciton by 21.6 meV, equal to E" phonon energy from Se vibrations. First-principles calculations show that the exciton-phonon interaction selectively couples the spin-forbidden dark exciton to the intravalley spin-allowed bright exciton, permitting the simultaneous emission of a chiral phonon and a circularly-polarized photon. Our discovery and understanding of the phonon replica reveals a chirality dictated emission channel of the phonons and photons, unveiling a new route of manipulating valley-spin.

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arXiv2018

Excitonic Complexes and Emerging Interlayer Electron-Phonon Coupling in BN Encapsulated Monolayer Semiconductor Alloy: WS0.6Se1.4

Monolayer transition metal dichalcogenides (TMDs) possess superior optical properties, including the valley degree of freedom that can be accessed through the excitation light of certain helicity. While WS2 and WSe2 are known for their excellent valley polarization due to the strong spin-orbit coupling, the optical bandgap is limited by the ability to choose from only these two materials. This limitation can be overcome through the monolayer alloy semiconductor, WS2xSe2(1-x), which promises an atomically thin semiconductor with tunable bandgap. In this work, we show that the high-quality BN encapsulated monolayer WS0.6Se1.4 inherits the superior optical properties of tungsten-based TMDs, including a trion splitting of ~ 6 meV and valley polarization as high as ~60%. In particular, we demonstrate for the first time the emerging and gate-tunable interlayer electron-phonon coupling in the BN/WS0.6Se1.4/BN van der Waals heterostructure, which renders the otherwise optically silent Raman modes visible. In addition, the emerging Raman signals can be drastically enhanced by the resonant coupling to the 2s state of the monolayer WS0.6Se1.4 A exciton. The BN/WS2xSe2(1-x)/BN van der Waals heterostructure with a tunable bandgap thus provides an exciting platform for exploring the valley degree of freedom and emerging excitonic physics in two-dimension.

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arXiv2018

Revealing the Biexciton and Trion-exciton Complexes in BN Encapsulated WSe2

Strong Coulomb interactions in single-layer transition metal dichalcogenides (TMDs) result in the emergence of strongly bound excitons, trions and biexcitons. These excitonic complexes possess the valley degree of freedom, which can be exploited for quantum optoelectronics. However, in contrast to the good understanding of the exciton and trion properties, the binding energy of the biexciton remains elusive, with theoretical calculations and experimental studies reporting discrepant results. In this work, we resolve the conflict by employing low-temperature photoluminescence spectroscopy to identify the biexciton state in BN encapsulated single-layer WSe2. The biexciton state only exists in charge neutral WSe2, which is realized through the control of efficient electrostatic gating. In the lightly electron-doped WSe2, one free electron binds to a biexciton and forms the trion-exciton complex. Improved understanding of the biexciton and trion-exciton complexes paves the way for exploiting the many-body physics in TMDs for novel optoelectronics applications.

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arXiv2016

Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics

Here we repair the single-layer MoSe2 field-effect transistors by the EDTA processing, after which the devices' room-temperature carrier mobility increases from 0.1 to over 70cm2/Vs. The atomic dynamics is constructed by the combined study of the first-principle calculation, aberration-corrected transmission electron microscopy and Raman spectroscopy. Single/double Se vacancies are revealed originally, which cause some mid-gap impurity states and localize the device carriers. They are found repaired with the result of improved electronic transport. Such a picture is confirmed by a 1.5cm-1 red shift in the Raman spectra.

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arXiv2014

Experimental evidence and control of the bulk-mediated intersurface coupling in topological insulator Bi2Te2Se nanoribbons

Nearly a decade after the discovery of topological insulators (TIs), the important task of identifying and characterizing their topological surface states through electrical transport experiments remains incomplete. The interpretation of these experiments is made difficult by the presence of residual bulk carriers and their coupling to surface states, which is not yet well understood. In this work, we present the first evidence for the existence and control of bulk-surface coupling in Bi2Te2Se nanoribbons, which are promising platforms for future TI-based devices. Our magnetoresistance measurements reveal that the number of coherent channels contributing to quantum interference in the nanoribbons changes abruptly when the film thickness exceeds the bulk phase relaxation length. We interpret this observation as an evidence for bulk-mediated coupling between metallic states located on opposite surfaces. This hypothesis is supported by additional magnetoresistance measurements conducted under a set of gate voltages and in a parallel magnetic field, the latter of which alters the intersurface coupling in a controllable way.

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arXiv2014

Indications of the topological transport by the universal conductance fluctuations in the Bi2Te2Se microflakes

Universal conductance fluctuations (UCFs) are extracted in the magnetoresistance responses in the bulk-insulating Bi2Te2Se microflakes. Its two-dimensional character is demonstrated by the field-tilting magnetoresistance measurements. Its origin from the surface electrons is determined by the fact that the UCF amplitudes keep unchanged while applying an in-plane field to suppress the coherence of bulk electrons. After considering the ensemble average in a batch of micrometer-sized samples, the intrinsic UCF magnitudes of over 0.37 e2/h is obtained. This agrees with the theoretical prediction on topological surface states. All the evidence point to the successful observation of the UCF of topological surface states.

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