arXiv subjects

Z. D. Kvon

Publications and source records attributed to Z. D. Kvon.

At least 73 records · Page 4Linked to original sources

arXiv2017

Robust helical edge transport at $ν=0$ quantum Hall state

Among the most interesting predictions in two-dimensional materials with a Dirac cone is the existence of the zeroth Landau level (LL), equally filled by electrons and holes with opposite chirality. The gapless edge states with helical spin structure emerge from Zeeman splitting at the LL filling factor $ν=0$ gapped quantum Hall state. We present observations of a giant nonlocal four-terminal transport in zero-gap HgTe quantum wells at the $ν=0$ quantum Hall state. Our experiment clearly demonstrates the existence of the robust helical edge state in a system with single valley Dirac cone materials.

cond-mat.mes-hall↗

arXiv2017

Magneto-resistance oscillations induced by high-intensity terahertz radiation

We report on observation of pronounced terahertz radiation-induced magneto-resistivity oscillations in AlGaAs/GaAs two-dimensional electron systems, the THz analog of the microwave induced resistivity oscillations (MIRO). Applying high power radiation of a pulsed molecular laser we demonstrate that MIRO, so far observed at low power only, are not destroyed even at very high intensities. Experiments with radiation intensity ranging over five orders of magnitude from $0.1$ W/cm$^2$ to $10^4$ W/cm$^2$ reveal high-power saturation of the MIRO amplitude, which is well described by an empirical fit function $I/(1 + I/I_s)^β$ with $β\sim 1$. The saturation intensity Is is of the order of tens of W/cm$^2$ and increases by six times by increasing the radiation frequency from $0.6$ to $1.1$ THz. The results are discussed in terms of microscopic mechanisms of MIRO and compared to nonlinear effects observed earlier at significantly lower excitation frequencies.

cond-mat.mes-hall↗

arXiv2017

Universal Faraday rotation in HgTe wells with critical thickness

The universal value of Faraday rotation angle close to the fine structure constant is experimentally observed in thin HgTe quantum wells with thickness on the border between trivial insulating and the topologically non-trivial Dirac phases. The quantized value of the Faraday angle remains robust in the broad range of magnetic fields and gate voltages. Dynamic Hall conductivity of the hole-like carriers extracted from the analysis of the transmission data shows theoretically predicted universal value of consistent with the doubly degenerate Dirac state. On shifting the Fermi level by the gate voltage the effective sign of the charge carriers changes from positive (holes) to negative (electrons). The electron-like part of the dynamic response does not show quantum plateaus and is well described within the classical Drude model.

cond-mat.mtrl-sci↗

arXiv2017

Giant microwave-induced $B$-periodic magnetoresistance oscillations in a two-dimensional electron gas with a bridged-gate tunnel point contact

We have studied the magnetoresistance of the quantum point contact fabricated on the high mobility two-dimensional electron gas (2DEG) exposed to microwave irradiation. The resistance reveals giant $B$-periodic oscillations with the relative amplitude $ΔR/R$ of up to $700$\% resulting from the propagation and interference of the edge magnetoplasmons (EMPs) in the sample. This giant photoconductance is attributed to the considerably large local electron density modulation in the vicinity of the point contact. We have also analyzed the oscillation periods $ΔB$ of the resistance oscillations and, comparing the data with the EMP theory, extracted the EMP interference length $L$. We have found that the length $L$ substantially exceeds the distance between the contact leads but rather corresponds to the distance between metallic contact pads measured along the edge of the 2DEG. This resolves existing controversy in the literature and should help to properly design highly sensitive microwave and terahertz spectrometers based on the discussed effect.

cond-mat.mes-hall↗

arXiv2016

Photogalvanic probing of helical edge channels in 2D HgTe topological insulators

We report on the observation of a circular photogalvanic current excited by terahertz (THz) laser radiation in helical edge channels of HgTe-based 2D topological insulators (TIs). The direction of the photocurrent reverses by switching the radiation polarization from right-handed to left-handed one and, for fixed photon helicity, is opposite for the opposite edges. The photocurrent is detected in a wide range of gate voltages. With decreasing the Fermi level below the conduction band bottom, the current emerges, reaches a maximum, decreases, changes its sign close to the charge neutrality point (CNP), and again rises. Conductance measured over a 7 $μ$m distance at CNP approaches 2e2/h, the value characteristic for ballistic transport in 2D TIs. The data reveal that the photocurrent is caused by photoionization of helical edge electrons to the conduction band. We discuss the microscopic model of this phenomenon and compare calculations with the experimental data.

cond-mat.mes-hall↗

arXiv2016

Strong coupling between a permalloy ferromagnetic contact and a helical edge channel in a narrow HgTe quantum well

We experimentally investigate spin-polarized electron transport between a permalloy ferromagnet and the edge of a two-dimensional electron system with band inversion, realized in a narrow, 8~nm wide HgTe quantum well. In zero magnetic field, we observe strong asymmetry of the edge potential distribution with respect to the ferromagnetic ground lead. This result indicates, that the helical edge channel, specific for the structures with band inversion even at the conductive bulk, is strongly coupled to the ferromagnetic side contact, possibly due to the effects of proximity magnetization. It allows selective and spin-sensitive contacting of helical edge states.

cond-mat.mes-hall↗

arXiv2016

MIRO-like oscillations of magneto-resistivity in GaAs heterostructures induced by THz radiation

We report on the study of terahertz radiation induced MIRO-like oscillations of magneto-resistivity in GaAs heterostructures. Our experiments provide an answer on two most intriguing questions - effect of radiation helicity and the role of the edges - yielding crucial information for understanding of the MIRO origin. Moreover, we demonstrate that the range of materials exhibiting radiation-induced magneto-oscillations can be largely extended by using high-frequency radiation.

cond-mat.mes-hall↗

arXiv2015

Andreev reflection at the edge of a two-dimentional semimetal

We investigate electron transport through the interface between a niobium superconductor and the edge of a two-dimensional semimetal, realized in a 20~nm wide HgTe quantum well. Experimentally, we observe that typical behavior of a single Andreev contact is complicated by both a pronounced zero-bias resistance anomaly and shallow subgap resistance oscillations with $1/n$ periodicity. These results are demonstrated to be independent of the superconducting material and should be regarded as specific to a 2D semimetal in a proximity with a superconductor. We interpret these effects to originate from the Andreev-like correlated process at the edge of a two-dimensional semimetal.

cond-mat.mes-hall↗

arXiv2015

Probing quantum capacitance in a 3D topological insulator

We measure the quantum capacitance and probe thus directly the electronic density of states of the high mobility, Dirac type of two-dimensional electron system, which forms on the surface of strained HgTe. Here we show that observed magneto-capacitance oscillations probe, in contrast to magnetotransport, primarily the top surface. Capacitance measurements constitute thus a powerful tool to probe only one topological surface and to reconstruct its Landau level spectrum for different positions of the Fermi energy.

cond-mat.mes-hall↗

arXiv2015

Evidence on the macroscopic length scale spin coherence for the edge currents in a narrow HgTe quantum well

We experimentally investigate spin-polarized electron transport between two ferromagnetic contacts, placed at the edge of a two-dimensional electron system with band inversion. The system is realized in a narrow (8~nm) HgTe quantum well, the ferromagnetic side contacts are formed from a pre-magnetized permalloy film. In zero magnetic field, we find a significant edge current contribution to the transport between two ferromagnetic contacts. We experimentally demonstrate that this transport is sensitive to the mutual orientation of the magnetization directions of two 200~$μ$m-spaced ferromagnetic leads. This is a direct experimental evidence on the spin-coherent edge transport over the macroscopic distances. Thus, the spin is extremely robust at the edge of a two-dimensional electron system with band inversion, confirming the helical spin-resolved nature of edge currents.

cond-mat.mes-hall↗

arXiv2015

Shot noise of the edge transport in the inverted band HgTe quantum wells

We investigate the current noise in HgTe-based quantum wells with an inverted band structure in the regime of disordered edge transport. Consistent with previous experiments, the edge resistance strongly exceeds $h/e^2$ and weakly depends on the temperature. The shot noise is well below the Poissonian value and characterized by the Fano factor with gate voltage and sample to sample variations in the range $0.1<F<0.3$. Given the fact that our devices are shorter than the most pessimistic estimate of the ballistic dephasing length, these observations exclude the possibility of one-dimensional helical edge transport. Instead, we suggest that a disordered multi-mode conduction is responsible for the edge transport in our experiment.

cond-mat.mes-hall↗

arXiv2015

Persistence of two-dimensional topological insulator state in wide HgTe quantum well

Our experimental studies of electron transport in wide (14 nm) HgTe quantum wells confirm persistence of a two-dimensional topological insulator state reported previously for narrower wells, where it was justified theoretically. Comparison of local and nonlocal resistance measurements indicate edge state transport in the samples of about 1 mm size at temperatures below 1 K. Temperature dependence of the resistances suggests an insulating gap of the order of a few meV. In samples with sizes smaller than 10 $μ$m a quasiballistic transport via the edge states is observed.

cond-mat.mes-hall↗

arXiv2015

Cyclotron Resonance Assisted Photocurrents in Surface States of a 3D Topological Insulator Based on a Strained High Mobility HgTe Film

We report on the observation of cyclotron resonance induced photocurrents, excited by continuous wave terahertz radiation, in a 3D topological insulator (TI) based on an 80 nm strained HgTe film. The analysis of the photocurrent formation is supported by complimentary measurements of magneto-transport and radiation transmission. We demonstrate that the photocurrent is generated in the topologically protected surface states. Studying the resonance response in a gated sample we examined the behavior of the photocurrent, which enables us to extract the mobility and the cyclotron mass as a function of the Fermi energy. For high gate voltages we also detected cyclotron resonance (CR) of bulk carriers, with a mass about two times larger than that obtained for the surface states. The origin of the CR assisted photocurrent is discussed in terms of asymmetric scattering of TI surface carriers in the momentum space. Furthermore, we show that studying the photocurrent in gated samples provides a sensitive method to probe the effective masses and the mobility of 2D Dirac surface states, when the Fermi level lies in the bulk energy gap or even in the conduction band.

cond-mat.mes-hall↗

arXiv2015

Conductance oscillations at the interface between a superconductor and the helical edge channel in a narrow HgTe quantum well

We experimentally investigate electron transport through the interface between a superconductor and the edge of a two-dimensional electron system with band inversion. The interface is realized as a tunnel NbN side contact to a narrow 8~nm HgTe quantum well. It demonstrates a typical Andreev behavior with finite conductance within the superconducting gap. Surprisingly, the conductance is modulated by a number of equally-spaced oscillations. The oscillations are present only within the superconducting gap and at lowest, below 1~K, temperatures. The oscillations disappear completely in magnetic fields, normal to the two-dimensional electron system plane. In contrast, the oscillations' period is only weakly affected by the highest, up to 14~T, in-plane oriented magnetic fields. We interpret this behavior as the interference oscillations in a helical one-dimensional edge channel due to a proximity with a superconductor.

cond-mat.mes-hall↗

arXiv2015

Aharonov Bohm effect in 2D topological insulator

We present magnetotransport measurements in HgTe quantum well with inverted band structure, which expected to be a two-dimensional topological insulator having the bulk gap with helical gapless states at the edge. The negative magnetoresistance is observed in the local and nonlocal resistance configuration followed by the periodic oscillations damping with magnetic field. We attribute such behaviour to Aharonov-Bohm effect due to magnetic flux through the charge carrier puddles coupled to the helical edge states. The characteristic size of these puddles is about 100 nm.

cond-mat.mes-hall↗

arXiv2014

Quantum Oscillations of Photocurrents in HgTe Quantum Wells with Dirac and Parabolic Dispersions

We report on the observation of magneto-oscillations of terahertz radiation induced photocurrent in HgTe/HgCdTe quantum wells (QWs) of different widths, which are characterized by a Dirac-like, inverted and normal parabolic band structure. The photocurrent data are accompanied by measurements of photoresistance (photoconductivity), radiation transmission, as well as magneto-transport. We develop a microscopic model of a cyclotron-resonance assisted photogalvanic effect, which describes main experimental findings. We demonstrate that the quantum oscillations of the photocurrent are caused by the crossing of Fermi level by Landau levels resulting in the oscillations of spin polarization and electron mobilities in spin subbands. Theory explains a photocurrent direction reversal with the variation of magnetic field observed in experiment. We describe the photoconductivity oscillations related with the thermal suppression of the Shubnikov-de Haas effect.

cond-mat.mes-hall↗

arXiv2013

Magnetic quantum ratchet effect in Si-MOSFETs

We report on the observation of magnetic quantum ratchet effect in metal-oxide-semiconductor field-effect-transistors on silicon surface (Si-MOSFETs). We show that the excitation of an unbiased transistor by ac electric field of terahertz radiation at normal incidence leads to a direct electric current between the source and drain contacts if the transistor is subjected to an in-plane magnetic field. The current rises linearly with the magnetic field strength and quadratically with the ac electric field amplitude. It depends on the polarization state of the ac field and can be induced by both linearly and circularly polarized radiation. We present the quasi-classical and quantum theories of the observed effect and show that the current originates from the Lorentz force acting upon carriers in asymmetric inversion channels of the transistors.

cond-mat.mes-hall↗

arXiv2013

Transport properties of a 3D topological insulator based on a strained high mobility HgTe film

We investigated the magnetotransport properties of strained, 80nm thick HgTe layers featuring a high mobility of mu =4x10^5 cm^2/Vs. By means of a top gate the Fermi-energy is tuned from the valence band through the Dirac type surface states into the conduction band. Magnetotransport measurements allow to disentangle the different contributions of conduction band electrons, holes and Dirac electrons to the conductivity. The results are are in line with previous claims that strained HgTe is a topological insulator with a bulk gap of ~15meV and gapless surface states.

cond-mat.mes-hall↗