arXiv subjects

Z. Fisk

Publications and source records attributed to Z. Fisk.

At least 37 records · Page 2Linked to original sources

arXiv2018

Evolution of ground state wave function in CeCoIn$_5$ upon Cd or Sn doping

We present linear polarization-dependent soft x-ray absorption spectroscopy data at the Ce $M_{4,5}$ edges of Cd and Sn doped CeCoIn$_5$. The 4$f$ ground state wave functions have been determined for their superconducting, antiferromagnetic and paramagnetic ground states. The absence of changes in the wave functions in CeCo(In$_{1-x}$Cd$_x$)$_5$ suggests the 4$f$\,--\,conduction electron ($cf$) hybridization is not affected by globally Cd doping, thus supporting the interpretation of magnetic droplets nucleating long range magnetic order. This is contrasted by changes in the wave function due to Sn substitution. Increasing Sn in CeCo(In$_{1-y}$Sn$_y$)$_5$ compresses the 4$f$ orbitals into the tetragonal plane of these materials, suggesting enhanced $cf$ hybridization with the in-plane In(1) atoms and a homogeneous altering of the electronic structure. As these experiments show, the 4$f$ wave functions are a very sensitive probe of small changes in the hybridization of 4$f$ and conduction electrons, even conveying information about direction dependencies.

cond-mat.str-el↗

arXiv2017

A New Method for Characterizing Bulk and Surface Conductivities of Three-Dimensional Topological Insulators: Inverted Resistance Measurements

We introduce a new resistance measurement method that is useful in characterizing materials with both surface and bulk conduction, such as three-dimensional topological insulators. The transport geometry for this new resistance measurement configuration consists of one current lead as a closed loop that fully encloses the other current lead on the surface, and two voltage leads that are both placed outside the loop. We show that in the limit where the transport is dominated by the surface conductivity of the material, the four-terminal resistance measured from such a transport geometry is proportional to $σ_b/σ_s^2$, where $σ_b$ and $σ_s$ are the bulk and surface conductivities of the material, respectively. We call this new type of measurement \textit{inverted resistance measurement}, as the resistance scales inversely with the bulk resistivity. We discuss possible implementations of this new method by performing numerical calculations on different geometries and introduce strategies to extract the bulk and surface conductivities. We also demonstrate inverted resistance measurements on SmB$_6$, a topological Kondo insulator, using both single-sided and coaxially-aligned double-sided Corbino disk transport geometries. Using this new method, we are able to measure the bulk conductivity, even at low temperatures, where the bulk conduction is much smaller than the surface conduction in this material.

cond-mat.mes-hall↗

arXiv2017

Bulk and surface electronic properties of SmB6: a hard x-ray photoelectron spectroscopy study

We have carried out bulk-sensitive hard x-ray photoelectron spectroscopy (HAXPES) measurements on in-situ cleaved and ex-situ polished SmB6 single crystals. Using the multiplet-structure in the Sm 3d core level spectra, we determined reliably that the valence of Sm in bulk SmB6 is close to 2.55 at ~5 K. Temperature dependent measurements revealed that the Sm valence gradually increases to 2.64 at 300 K. From a detailed line shape analysis we can clearly observe that not only the J=0 but also the J=1 state of the Sm 4f 6 configuration becomes occupied at elevated temperatures. Making use of the polarization dependence, we were able to identify and extract the Sm 4f spectral weight of the bulk material. Finally, we revealed that the oxidized or chemically damaged surface region of the ex-situ polished SmB6 single crystal is surprisingly thin, about 1 nm only.

cond-mat.mtrl-sci↗

arXiv2017

Planar tunneling spectroscopy of the topological Kondo insulator SmB$_6$

Several technical issues and challenges are identified and investigated for the planar tunneling spectroscopy of the topological Kondo insulator SmB$_6$. Contrasting behaviors of the tunnel junctions prepared in two different ways are analyzed and explained in detail. The conventional approach based on an AlO$_\text{x}$ tunnel barrier results in unsatisfactory results due to the inter-diffusion between SmB$_6$ and deposited Al. On the contrary, plasma oxidation of SmB$_6$ crystals produces high-quality tunnel barriers on both (001) and (011) surfaces. Resultant conductance spectra are highly reproducible with clear signatures for the predicted surface Dirac fermions and the bulk hybridization gap as well. The surface states are identified to reside on two or one {\it distinguishable} Dirac cone(s) on the (001) and (011) surface, respectively, in good agreement with the recent literature. However, their topological protection is found to be limited within the low energy region due to their inevitable interaction with the bulk excitations, called spin excitons, consistent with a recent theoretical prediction. Implications of our findings on other physical properties in SmB$_6$ and also other correlated topological materials are remarked.

cond-mat.str-el↗

arXiv2017

Doping-induced superconductivity of ZrB$_2$ and HfB$_2$

Unlike the widely studied $s$-type two-gap superconductor MgB$_2$, the chemically similar compounds ZrB$_2$ and HfB$_2$ do not superconduct above 1 K. Yet, it has been shown that small amounts of self- or extrinsic doping (in particular with vanadium), can induce superconductivity in these materials. Based on results of different macro- and microscopic measurements, including magnetometry, nuclear magnetic resonance (NMR), resistivity, and muon-spin rotation ($μ$SR), we present a comparative study of Zr$_{0.96}$V$_{0.04}$B$_2$ and Hf$_{0.97}$V$_{0.03}$B$_2$. Their key magnetic and superconducting features are determined and the results are considered within the theoretical framework of multiband superconductivity proposed for MgB$_2$. Detailed Fermi surface (FS) and electronic structure calculations reveal the difference between MgB$_2$ and transition-metal diborides.

cond-mat.supr-con↗

arXiv2017

The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)

We report on electrical resistivity, magnetoresistance (MR) and Hall effect measurements in four non-superconducting BaFe$_{2-x}$TM$_x$As$_2$ (TM = Mn, Cu and Ni) single crystals with small values of the chemical substitution $x$. The spin density wave (SDW) ordering that occurs in these systems at temperatures $T\sim$ (120 - 140) K, in close vicinity to a tetragonal/orthorhombic transition, produces significant modifications in their magneto-transport properties. While in the magnetically ordered phase the MR is positive and its magnitude increases with decreasing temperatures, in the paramagnetic regime the MR becomes vanishingly small. Above the spin density wave transition temperature ($T_{\text{SDW}}$) the Hall coefficient $R_H$ is negative, small and weakly temperature dependent, but a remarkable change of slope occurs in the $R_H$ versus $T$ curves at $T = T_{\text{SDW}}$. The Hall coefficient amplitude, while remaining negative, increases steadily and significantly as the temperature is decreased below $T_{\text{SDW}}$ and down to $T =$ 20 K. The qualitative behavior of both MR and Hall coefficient is weakly dependent on the chemical substitution in the studied limit. The experiments provide strong evidence that scattering of charge carriers by magnetic excitations has to be taken into account to explain the behavior of the resistivity, magnetoresistance and Hall effect in the ordered phase of the studied compounds. Effects of multiple band conduction also must be considered for a complete interpretation of the results.

cond-mat.supr-con↗

arXiv2017

Competing magnetic orders in the superconducting state of Nd-doped CeRhIn$_{5}$ under pressure

Applied pressure drives the heavy-fermion antiferromagnet CeRhIn$_{5}$ towards a quantum critical point that becomes hidden by a dome of unconventional superconductivity. Magnetic fields suppress this superconducting dome, unveiling the quantum phase transition of local character. Here, we show that $5\%$ magnetic substitution at the Ce site in CeRhIn$_{5}$, either by Nd or Gd, induces a zero-field magnetic instability inside the superconducting state. This magnetic state not only should have a different ordering vector than the high-field local-moment magnetic state, but it also competes with the latter, suggesting that a spin-density-wave phase is stabilized in zero field by Nd and Gd impurities - similarly to the case of Ce$_{0.95}$Nd$_{0.05}$CoIn$_{5}$. Supported by model calculations, we attribute this spin-density wave instability to a magnetic-impurity driven condensation of the spin excitons that form inside the unconventional superconducting state.

cond-mat.str-el↗

arXiv2017

Kondo insulator SmB6 under strain: surface dominated conduction near room temperature

SmB6 is a strongly correlated mixed-valence Kondo insulator with a newly discovered surface state, proposed to be of non-trivial topological origin. However, the surface state dominates electrical conduction only below T* ~ 4 K limiting its scientific investigation and device application. Here, we report the enhancement of T * in SmB6 under the application of tensile strain. With 0.7% tensile strain we report surface dominated conduction at up to a temperature of 240 K, persisting even after the strain has been removed. This can be explained in the framework of strain-tuned temporal and spatial fluctuations of f-electron configurations, which might be generally applied to other mixed-valence materials. We note that this amount of strain can be indued in epitaxial SmB6 films via substrate in potential device applications.

cond-mat.str-el↗

arXiv2017

Additional energy scale in SmB$_6$ at low temperature

Topological insulators give rise to exquisite electronic properties due to their spin-momentum locked Dirac-cone-like band structure. Recently, it has been suggested that the required opposite parities between valence and conduction band along with strong spin-orbit coupling can be realized in correlated materials. Particularly, SmB$_6$ has been proposed as candidate material for a topological Kondo insulator. By utilizing scanning tunneling microscopy and spectroscopy measurements down to 0.35 K, we observed several states within the hybridization gap of about $\pm$20 meV on well characterized (001) surfaces of SmB$_6$. The spectroscopic response to impurities and magnetic fields allows to distinguish between dominating bulk and surface contributions to these states. The surface contributions develop particularly strongly below about 7 K which can be understood in terms of a breakdown of the Kondo effect at the surface. Our high-resolution data provide detailed insight into the electronic structure of SmB$_6$, which will reconcile many current discrepancies on this compound.

cond-mat.str-el↗

arXiv2016

The quartet ground state in CeB$_6$: an inelastic x-ray scattering study

We investigated the ground state symmetry of the cubic hidden order compound CeB$_6$ by means of core level non-resonant inelastic x-ray scattering (NIXS). The information is obtained from the directional dependence of the scattering function that arises from higher than dipole transitions. Our new method confirms that the ground state is well described using a localized crystal-field model assuming a $Γ_8$ quartet ground state.

cond-mat.str-el↗

arXiv2016

Reduction of the low-temperature bulk gap in samarium hexaboride under high magnetic fields

SmB$_6$ exhibits a small (15-20 meV) bandgap at low temperatures due to hybridized $d$ and $f$ electrons, a tiny (3 meV) transport activation energy $(E_{A})$ above 4 K, and surface states accessible to transport below 2 K. We study its magnetoresistance in 60-T pulsed fields between 1.5 K and 4 K. The response of the nearly $T$-independent surface states (which show no Shubnikov-de Haas oscillations) is distinct from that of the activated bulk. $E_{A}$ shrinks by 50% under fields up to 60 T. Data up to 93 T suggest that this trend continues beyond 100 T, in contrast with previous explanations. It rules out emerging theories to explain observed exotic magnetic quantum oscillations.

cond-mat.str-el↗

arXiv2016

Strong pinning of vortices by antiferromagnetic domain boundaries in CeCo(In$_{1-x}$Cd$_x$)$_5$

We have studied the isothermal magnetization $M(H)$ of CeCo(In$_{1-x}$Cd$_x$)$_5$ with $x$ = 0.0075 and 0.01 down to 50 mK. Pronounced field-history dependent phenomena occur in the coexistence regime of the superconducting and antiferromagnetic phases. At low-fields, a phenomenological model of magnetic-flux entry well explains $M(H)$ implying the dominance of bulk pinning effect. However, unless crystallographic quenched disorder is hysteretic, the asymmetric peak effect (ASPE) which appears at higher fields cannot be explained by the pinning of vortices due to material defects. Also the temperature dependence of the ASPE deviates from the conventional scenario for the peak effect. Comparison of our thermodynamic phase diagrams with those from previous neutron scattering and magnetoresistance experiments indicates that the pinning of vortices takes place at the field-history dependent antiferromagnetic domain boundaries.

cond-mat.supr-con↗

arXiv2016

Anomalous 3D bulk AC conduction within the Kondo gap of SmB$_6$ single crystals

The Kondo insulator SmB$_6$ has long been known to display anomalous transport behavior at low temperatures, T$<5$ K. In this temperatures range, a plateau is observed in the dc resistivity, contrary to the exponential divergence expected for a gapped system. Recent theoretical calculations suggest that SmB$_6$ may be the first topological Kondo insulator (TKI) and propose that the residual conductivity is due to topological surface states which reside within the Kondo gap. Since the TKI prediction many experiments have claimed to observe high mobility surface states within a perfectly insulating hybridization gap. Here, we investigate the low energy optical conductivity within the hybridization gap of single crystals of SmB$_6$ via time domain terahertz spectroscopy. Samples grown by both optical floating zone and aluminum flux methods are investigated to probe for differences originating from sample growth techniques. We find that both samples display significant 3D bulk conduction originating within the Kondo gap. Although SmB$_6$ may be a bulk dc insulator, it shows significant bulk ac conduction that is many orders of magnitude larger than any known impurity band conduction. The nature of these in-gap states and their coupling with the low energy spin excitons of SmB$_6$ is discussed. Additionally, the well defined conduction path geometry of our optical experiments allows us to show that any surface states, which lie below our detection threshold if present, must have a sheet resistance of R$/\square \ge$ 1000 $Ω$.

cond-mat.str-el↗

arXiv2016

Unusual Kondo-hole effect and crystal-field frustration in Nd-doped CeRhIn$_{5}$

We investigate single crystalline samples of Ce$_{1-x}$Nd$_{x}$RhIn$_{5}$ by means of X-ray diffraction, microprobe, magnetic susceptibility, heat capacity, and electrical resistivity measurements. Our data reveal that the antiferromagnetic transition temperature of CeRhIn$_{5}$, $T_{N}^{\mathrm{Ce}} = 3.8$ K, is linearly suppressed with $x_{\mathrm{Nd}}$, by virtue of the "Kondo hole" created by Nd substitution. The extrapolation of $T^{\mathrm{Ce}}_{N}$ to zero temperature, however, occurs at $x_{c} \sim 0.3$, which is below the 2D percolation limit found in Ce$_{1-x}$La$_{x}$RhIn$_{5}$. This result strongly suggests the presence of crystal-field frustration effects. Near $x_{\mathrm{Nd}} \sim 0.2$, the Ising AFM order from Nd ions is stabilized and $T^{\mathrm{Nd}}_{N}$ increases up to $11$ K in pure NdRhIn$_{5}$. Our results shed light on the effects of magnetic doping in heavy-fermion antiferromagnets and stimulate the study of such systems under applied pressure.

cond-mat.str-el↗

arXiv2016

Radio Frequency Tunable Oscillator Device Based on SmB6 Microcrystal

Radio frequency tunable oscillators are vital electronic components for signal generation, characterization, and processing. They are often constructed with a resonant circuit and a 'negative' resistor, such as a Gunn-diode, involving complex structure and large footprints. Here we report that a piece of SmB6, 100 micron in size, works as a current-controlled oscillator in the 30 MHz frequency range. SmB6 is a strongly correlated Kondo insulator that was recently found to have a robust surface state likely to be protected by the topology of its electronics structure. We exploit its non-linear dynamics, and demonstrate large AC voltage outputs with frequencies from 20 Hz to 30 MHz by adjusting a small DC bias current. The behaviors of these oscillators agree well with a theoretical model describing the thermal and electronic dynamics of coupled surface and bulk states. With reduced crystal size we anticipate the device to work at higher frequencies, even in the THz regime. This type of oscillator might be realized in other materials with a metallic surface and a semiconducting bulk.

cond-mat.str-el↗

arXiv2016

Low Temperature metamagnetism and Hall effect anomaly in Kondo compound CeAgBi2

Heavy fermion (HF) materials exhibit a rich array of phenomena due to the strong Kondo coupling between their localized moments and itinerant electrons. A central question in their study is to understand the interplay between magnetic order and charge transport, and its role in stabilizing new quantum phases of matter. Particularly promising in this regard is a family of tetragonal intermetallic compounds Ce{$TX$}$_2$ ($T=$ transition metal, $X=$ pnictogen), that includes a variety of HF compounds showing $T$-linear electronic specific heat $\bf{C_e \sim γT}$, with $γ\sim$ 20-500 mJ$\cdot$mol$^{-1}$~K$^{-2}$, reflecting an effective mass enhancement ranging from small to modest. Here, we study the low-temperature field-tuned phase diagram of high-quality CeAgBi$_2$ using magnetometry and transport measurements. We find an antiferromagnetic transition at ${T_{N} = 6.4}$~K with weak magnetic anisotropy and the easy axis along the $c$-axis, similar to previous reports (${T_{N} = 6.1}$~K). This scenario, along with the presence of two anisotropic Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions, leads to a rich field-tuned magnetic phase diagram, consisting of five metamagnetic transitions of both first and second order. In addition, we unveil an anomalous Hall contribution for fields $H<54$ kOe which is drastically altered when $H$ is tuned through a trio of transitions at 57, 78, and 84~kOe, suggesting that the Fermi surface is reconstructed in a subset of the metamagnetic transitions.

cond-mat.mtrl-sci↗

arXiv2016

Consistency of Photoemission and Quantum Oscillations for Surface States of SmB6

The mixed valent compound SmB6 is of high current interest as the first candidate example of topologically protected surface states in a strongly correlated insulator and also as a possible host for an exotic bulk many-body state that would manifest properties of both an insulator and a metal. Two different de Haas van Alphen (dHvA) experiments have each supported one of these possibilities, while angle resolved photoemission spectroscopy (ARPES) for the (001) surface has supported the first, but without quantitative agreement to the dHvA results. We present new ARPES data for the (110) surface and a new analysis of all published dHvA data and thereby bring ARPES and dHvA into substantial consistency around the basic narrative of two dimensional surface states.

cond-mat.str-el↗

arXiv2015

Surface and electronic structure of SmB$_6$ through Scanning Tunneling Microscopy

SmB$_6$, a so called Kondo insulator, is recently discussed as a candidate material for a strong topological insulator. We present detailed atomically resolved topographic information on the (001) surface from more than a dozen SmB$_6$ samples. Atomically flat, {\it in situ} cleaved surfaces often exhibit B- and Sm-terminated surfaces as well as reconstructed and non-reconstructed areas {\it coexisting} on different length scales. The terminations are unambiguously identified. In addition, electronic inhomogeneities are observed which likely result from the polar nature of the (001) surface and may indicate an inhomogeneous Sm valence at the surface of SmB$_6$. In addition, atomically resolved topographies on a (110) surface are discussed.

cond-mat.str-el↗