arXiv subjects

Z. Huang

Publications and source records attributed to Z. Huang.

At least 127 records · Page 7Linked to original sources

arXiv2015

The Effect of Polar Fluctuation and Lattice Mismatch on Carrier Mobility at Oxide Interfaces

Since the discovery of two-dimensional electron gas (2DEG) at the oxide interface of LaAlO3/SrTiO3, improving carrier mobility has become an important issue for device applications. In this paper, by using an alternate polar perovskite insulator (La0.3Sr0.7)(Al0.65Ta0.35)O3 (LSAT) for reducing lattice mismatch from 3.0% to 1.0%, the low-temperature carrier mobility has been increased 30 fold to 35,000 cm2V-1s-1. Moreover, two critical thicknesses for the LSAT/SrTiO3 (001) interface are found: one at 5 unit cell for appearance of the 2DEG, the other at 12 unit cell for a peak in the carrier mobility. By contrast, the conducting (110) and (111) LSAT/STO interfaces only show a single critical thickness of 8 unit cells. This can be explained in terms of polar fluctuation arising from LSAT chemical composition. In addition to lattice mismatch and crystal symmetry at the interface, polar fluctuation arising from composition has been identified as an important variable to be tailored at the oxide interfaces to optimise the 2DEG transport.

cond-mat.str-el↗

arXiv2015

Two-dimensional superconductor-insulator quantum phase transitions in an electron-doped cuprate

We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by electric and magnetic field are quantum phase transitions and the transitions are governed by percolation effects - quantum mechanical in the former and classical in the latter case. Compared to the hole-doped cuprates, the SITs in electron-doped system occur at critical sheet resistances (Rc) much lower than the pair quantum resistance RQ=h/(2e)2=6.45 kΩ, suggesting the possible existence of fermionic excitations at finite temperature at the insulating phase near SITs.

cond-mat.supr-con↗

arXiv2014

Hα spectroscopy and multiwavelength imaging of a solar flare caused by filament eruption

We study a sequence of eruptive events including filament eruption, a GOES C4.3 flare and a coronal mass ejection. We aim to identify the possible trigger(s) and precursor(s) of the filament destabilisation; investigate flare kernel characteristics; flare ribbons/kernels formation and evolution; study the interrelation of the filament-eruption/flare/coronal-mass-ejection phenomena as part of the integral active-region magnetic field configuration; determine Hα line profile evolution during the eruptive phenomena. Multi-instrument observations are analysed including Hα line profiles, speckle images at Hα-0.8 Å and Hα+0.8 Å from IBIS at DST/NSO, EUV images and magnetograms from the SDO, coronagraph images from STEREO and the X-ray flux observations from FERMI and GOES. We establish that the filament destabilisation and eruption are the main trigger for the flaring activity. A surge-like event with a circular ribbon in one of the filament footpoints is determined as the possible trigger of the filament destabilisation. Plasma draining in this footpoint is identified as the precursor for the filament eruption. A magnetic flux emergence prior to the filament destabilisation followed by a high rate of flux cancelation of 1.34$\times10^{16}$ Mx s$^{-1}$ is found during the flare activity. The flare X-ray lightcurves reveal three phases that are found to be associated with three different ribbons occurring consecutively. A kernel from each ribbon is selected and analysed. The kernel lightcurves and H alpha line profiles reveal that the emission increase in the line centre is stronger than that in the line wings. A delay of around 5-6 mins is found between the increase in the line centre and the occurrence of red asymmetry. Only red asymmetry is observed in the ribbons during the impulsive phases. Blue asymmetry is only associated with the dynamic filament.

astro-ph.SR↗

arXiv2014

Bandgap Controlling of the Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in SrTiO3

We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 °C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is comprehensively investigated and finally attributed to Sr/Ti antisite point defects, supported by density functional theory calculations. More importantly, the bandgap enhancement can be utilized to tailor the electronic and magnetic phases of the two-dimensional electron gas (2DEG) in STO-based interface systems. For example, the oxygen-vacancy-induced 2DEG (2DEG-V) at the interface between amorphous LaAlO3 and STO films is more localized and the ferromagnetic order in the STO-film-based 2DEG-V can be clearly seen from low-temperature magnetotransport measurements. This opens an attractive path to tailor electronic, magnetic and optical properties of STO-based oxide interface systems under intensive focus in the oxide electronics community. Meanwhile, our study provides key insight into the origin of the fundamental issue that STO films are difficult to be doped into the fully metallic state by oxygen vacancies.

cond-mat.mtrl-sci↗

arXiv2014

$H$-$T$ Phase Diagram of Multi-component Superconductors with Frustrated Inter-component Couplings

Multi-band superconductors in which frustrated inter-band couplings yield a time-reversal-symmetry breaking (TRSB) state are investigated. Stability condition for the TRSB state are derived based on the Bardeen-Cooper-Schrieffer (BCS) theory. With the time-dependent Ginzburg-Landau (GL) method, vortex states are investigated first at the vicinity of critical temperature $T_\text{c}$ where the GL theory is valid, and the results are extended to compose the $H$-$T$ phase diagram. When material parameters satisfy the condition that the nucleation field is slightly larger than the thermodynamic field ($H_\text{n} \gtrsim H_\text{tc}$) derived in a previous work (X. Hu and Z. Wang, Phys. Rev. B 85, 064516 (2012)), an unconventional intermediate state characterized by clustering vortices appears. Calculation of interface energy reveals that the clustering vortices are associated with positive interface energy.

cond-mat.supr-con↗

arXiv2014

Dominant role of oxygen vacancies in electrical properties of unannealed LaAlO3/SrTiO3 interfaces

We report that in unannealed LaAlO3/SrTiO3 (LAO/STO) heterostructures the critical thickness for the appearance of the two-dimensional electron gas can be less than 4 unit cell (uc), the interface is conducting even for STO substrates with mixed terminations and the low-temperature resistance upturn in LAO/STO heterostructures with thick LAO layers strongly depends on laser fluence. Our experimental results provide fundamental insights into the different roles played by oxygen vacancies and polarization catastrophe in the two-dimensional electron gas in crystalline LAO/STO heterostructures.

cond-mat.mtrl-sci↗

arXiv2013

The Conducting Channel at the LaAlO$_3$/SrTiO$_3$ Interface

Localization of electrons in the two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ interface is investigated by varying the channel thickness in order to establish the nature of the conducting channel. Layers of SrTiO$_3$ were grown on NdGaO$_3$ (110) substrates and capped with LaAlO$_3$. When the SrTiO$_3$ thickness is $\leq 6$ unit cells, most electrons at the interface are localized, but when the number of SrTiO$_3$ layers is 8-16, the free carrier density approaches $3.3 \times 10^{14}$ cm$^{-2}$, the value corresponding to charge transfer of 0.5 electron per unit cell at the interface. The number of delocalized electrons decreases again when the SrTiO$_3$ thickness is $\geq 20$ unit cells. The $\sim{4}$ nm conducting channel is therefore located significantly below the interface. The results are explained in terms of Anderson localization and the position of the mobility edge with respect to the Fermi level.

cond-mat.str-el↗

arXiv2013

The power spectrum of systematics in cosmic shear tomography and the bias on cosmological parameters

Cosmic shear tomography has emerged as one of the most promising tools to both investigate the nature of dark energy and discriminate between General Relativity and modified gravity theories. In order to successfully achieve these goals, systematics in shear measurements have to be taken into account; their impact on the weak lensing power spectrum has to be carefully investigated in order to estimate the bias induced on the inferred cosmological parameters. To this end, we develop here an efficient tool to compute the power spectrum of systematics by propagating, in a realistic way, shear measurement, source properties and survey setup uncertainties. Starting from analytical results for unweighted moments and general assumptions on the relation between measured and actual shear, we derive analytical expressions for the multiplicative and additive bias, showing how these terms depend not only on the shape measurement errors, but also on the properties of the source galaxies (namely, size, magnitude and spectral energy distribution). We are then able to compute the amplitude of the systematics power spectrum and its scaling with redshift, while we propose a multigaussian expansion to model in a non-parametric way its angular scale dependence. Our method allows to self-consistently propagate the systematics uncertainties to the finally observed shear power spectrum, thus allowing us to quantify the departures from the actual spectrum. We show that even a modest level of systematics can induce non-negligible deviations, thus leading to a significant bias on the recovered cosmological parameters.

astro-ph.CO↗

arXiv2013

Origin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces: The role of oxygen vacancies and electronic reconstruction

The relative importance of atomic defects and electron transfer in explaining conductivity at the crystalline LaAlO3/SrTiO3 interface has been a topic of debate. Metallic interfaces with similar electronic properties produced by amorphous oxide overlayers on SrTiO3 have called in question the original polarization catastrophe model. We resolve the issue by a comprehensive comparison of (100)-oriented SrTiO3 substrates with crystalline and amorphous overlayers of LaAlO3 of different thicknesses prepared under different oxygen pressures. For both types of overlayers, there is a critical thickness for the appearance of conductivity, but its value is always 4 unit cells (around 1.6 nm) for the oxygen-annealed crystalline case, whereas in the amorphous case, the critical thickness could be varied in the range 0.5 to 6 nm according to the deposition conditions. Subsequent ion milling of the overlayer restores the insulating state for the oxygen-annealed crystalline heterostructures but not for the amorphous ones. Oxygen post-annealing removes the oxygen vacancies, and the interfaces become insulating in the amorphous case. However, the interfaces with a crystalline overlayer remain conducting with reduced carrier density. These results demonstrate that oxygen vacancies are the dominant source of mobile carriers when the LaAlO3 overlayer is amorphous, while both oxygen vacancies and polarization catastrophe contribute to the interface conductivity in unannealed crystalline LaAlO3/SrTiO3 heterostructures, and the polarization catastrophe alone accounts for the conductivity in oxygen-annealed crystalline LaAlO3/SrTiO3 heterostructures. Furthermore, we find that the crystallinity of the LaAlO3 layer is crucial for the polarization catastrophe mechanism in the case of crystalline LaAlO3 overlayers.

cond-mat.mtrl-sci↗

arXiv2013

Anisotropic Magneto Resistance and Planar Hall Effect at the LaAlO$_3$/SrTiO$_3$ Heterointerfaces: Effect of Carrier Confinement on Magnetic Interactions

The confinement of the two dimensional electron gas (2DEG), preferential occupancy of the Ti 3d orbital and strong spin-orbit coupling at the LaAlO$_3$/SrTiO$_3$ interface play a significant role in its emerging properties. Here we report a fourfold oscillation in the anisotropic magneto resistance (AMR) and the observation of planar Hall effect (PHE) at the LaAlO$_3$/SrTiO$_3$ heterointerface. We evaluate the carrier confinement effects on the AMR and find that the fourfold oscillation appears only for the case of 2DEG system while it is twofold for the 3D system. As the fourfold oscillation fits well to the phenomenological model for a cubic symmetry system, we attribute this oscillation to the anisotropy in the magnetic scattering arising from the interaction of electrons with the localized magnetic moments coupled to the crystal symmetry. The AMR behavior is further found to be sensitive to applied gate electric field, emphasizing the significance of spin-orbit coupling at the interface. These confinement effects suggest that the magnetic interactions are predominant at the interface, and the gate electric field modulation of AMR suggest the possible gate tunable magnetic interactions in these systems. The observed large PHE further indicates that the in plane nature of magnetic ordering arises from the in-plane Ti 3dxy orbitals.

cond-mat.str-el↗

arXiv2013

Tailoring the electronic properties of SrRuO3 films in SrRuO3/LaAlO3 superlattices

The electronic properties of SrRuO3/LaAlO3 (SRO/LAO) superlattices with different interlayer thicknesses of SRO layers were studied. As the thickness of SRO layers is reduced, the superlattices exhibit a metal-insulator transition implying transformation into a more localized state from its original bulk metallic state. The strain effect on the metal-insulator transition was also examined. The origin of the metal-insulator transition in ultrathin SRO film is discussed. All the superlattices, even those with SRO layers as thin as 2 unit cells, are ferromagnetic at low temperatures. Moreover, we demonstrate field effect devices based on such multilayer superlattice structures.

cond-mat.mtrl-sci↗

arXiv2013

Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces

We report evolution of the two-dimensional electron gas behavior at the NdAlO3/SrTiO3 heterointerfaces with varying thicknesses of the NdAlO3 overlayer. The samples with a thicker NdAlO3 show strong localizations at low temperatures and the degree of localization is found to increase with the NdAlO3 thickness. The T -1/3 temperature dependence of the sheet resistance at low temperatures and the magnetoresistance study reveal that the conduction is governed by a two-dimensional variable range hopping mechanism in this strong localized regime. We attribute this thickness dependence of the transport properties of the NdAlO3/SrTiO3 interfaces to the interface strain induced by the overlayers.

cond-mat.mes-hall↗

arXiv2013

Statistical Analysis of Small Ellerman Bomb Events

The properties of Ellerman bombs (EBs), small-scale brightenings in the H-alpha line wings, have proved difficult to establish due to their size being close to the spatial resolution of even the most advanced telescopes. Here, we aim to infer the size and lifetime of EBs using high-resolution data of an emerging active region collected using the Interferometric BIdimensional Spectrometer (IBIS) and Rapid Oscillations of the Solar Atmosphere (ROSA) instruments as well as the Helioseismic and Magnetic Imager (HMI) onboard the Solar Dynamics Observatory (SDO). We develop an algorithm to track EBs through their evolution, finding that EBs can often be much smaller (around 0.3") and shorter lived (less than 1 minute) than previous estimates. A correlation between G-band magnetic bright points and EBs is also found. Combining SDO/HMI and G-band data gives a good proxy of the polarity for the vertical magnetic field. It is found that EBs often occur both over regions of opposite polarity flux and strong unipolar fields, possibly hinting at magnetic reconnection as a driver of these events.The energetics of EB events is found to follow a power-law distribution in the range of "nano-flare" (10^{22-25} ergs).

astro-ph.SR↗

arXiv2012

Coronal hole boundaries at small scales: IV. SOT view Magnetic field properties of small-scale transient brightenings in coronal holes

We study the magnetic properties of small-scale transients in coronal hole. We found all brightening events are associated with bipolar regions and caused by magnetic flux emergence followed by cancellation with the pre-existing and newly emerging magnetic flux. In the coronal hole, 19 of 22 events have a single stable polarity which does not change its position in time. In eleven cases this is the dominant polarity. The dominant flux of the coronal hole form the largest concentration of magnetic flux in terms of size while the opposite polarity is distributed in small concentrations. In the coronal hole the number of magnetic elements of the dominant polarity is four times higher than the non-dominant one. The supergranulation configuration appears to preserve its general shape during approximately nine hours of observations although the large concentrations in the network did evolve and were slightly displaced, and their strength either increased or decreased. The emission fluctuations seen in the X-ray bright points are associated with reoccurring magnetic cancellation in the footpoints. Unique observations of an X-ray jet reveal similar magnetic behaviour in the footpoints, i.e. cancellation of the opposite polarity magnetic flux. We found that the magnetic flux cancellation rate during the jet is much higher than in bright points. Not all magnetic cancellations result in an X-ray enhancement, suggesting that there is a threshold of the amount of magnetic flux involved in a cancellation above which brightening would occur at X-ray temperatures. Our study demonstrates that the magnetic flux in coronal holes is continuously recycled through magnetic reconnection which is responsible for the formation of numerous small-scale transient events. The open magnetic flux forming the coronal-hole phenomenon is largely involved in these transient features.

astro-ph.SR↗

arXiv2012

Strong electronic correlation and strain effects at the interfaces between polar and nonpolar complex oxides

The interface between the polar LaAlO$_3$ and nonpolar SrTiO$_3$ layers has been shown to exhibit various electronic and magnetic phases such as two dimensional electron gas, superconductivity, magnetism and electronic phase separation. These rich phases are expected due to the strong interplay between charge, spin and orbital degree of freedom at the interface between these complex oxides, leading to the electronic reconstruction in this system. However, until now all of these new properties have been studied extensively based on the interfaces which involve a polar LaAlO$_3$ layer. To investigate the role of the A and B cationic sites of the ABO$_3$ polar layer, here we study various combinations of polar/nonpolar oxide (NdAlO$_3$/SrTiO$_3$, PrAlO$_3$/SrTiO$_3$ and NdGaO$_3$/SrTiO$_3$) interfaces which are similar in nature to LaAlO$_3$/SrTiO$_3$ interface. Our results show that all of these new interfaces can also produce 2DEG at their interfaces, supporting the idea that the electronic reconstruction is the driving mechanism for the creation of the 2DEG at these oxide interfaces. Furthermore, the electrical properties of these interfaces are shown to be strongly governed by the interface strain and strong correlation effects provided by the polar layers. Our observations may provide a novel approach to further tune the properties of the 2DEG at the selected polar/nonpolar oxide interfaces.

cond-mat.str-el↗

arXiv2012

Metallic state in La-doped YBa$_2$Cu$_3$O$_y$ thin films with $n$-type charge carriers

We report hole and electron doping in La-doped YBa$_2$Cu$_3$O$_y$(YBCO) thin films synthesized by pulsed laser deposition technique and subsequent \emph{in-situ} postannealing in oxygen ambient and vaccum. The $n$-type samples show a metallic behavior below the Mott limit and a high carrier density of $\sim2.8$ $\times$ 10$^{21}$ cm$^{-3}$ at room temperature (\emph{T}) at the optimally reduced condition. The in-plane resistivity ($ρ$$_{ab}$) of the $n$-type samples exhibits a quadratic \emph{T} dependence in the moderate-\emph{T} range and shows an anomaly at a relatively higher \emph{T} probably related to pseudogap formation analogous to underdoped Nd$_{2-x}$Ce$_x$CuO$_4$ (NCCO). Furthermore, $ρ$$_{ab}$(T), \emph{T}$_c$ and \emph{T} with minimum resistivity (\emph{T}$_{min}$) were investigated in both $p$- and $n$-side. The present results reveal the $n$-$p$ asymmetry (symmetry) within the metallic-state region in an underdoped cuprate and suggest the potential toward ambipolar superconductivity in a single YBCO system.

cond-mat.supr-con↗

arXiv2012

Coronal hole boundaries at small scales: III. EIS and SUMER views

We report on the plasma properties of small-scale transient events identified in the quiet Sun, coronal holes and their boundaries. We use spectroscopic co-observations from SUMER/SoHO and EIS/Hinode combined with high cadence imaging data from XRT/Hinode. We measure Doppler shifts using single and multiple Gauss fits of transition region and coronal lines as well as electron densities and temperatures. We combine co-temporal imaging and spectroscopy to separate brightening expansions from plasma flows. The transient brightening events in coronal holes and their boundaries were found to be very dynamical producing high density outflows at large speeds. Most of these events represent X-ray jets from pre-existing or newly emerging coronal bright points at X-ray temperatures. The average electron density of the jets is logNe ~ 8.76 cm^-3 while in the flaring site it is logNe ~ 9.51 cm^-3. The jet temperatures reach a maximum of 2.5 MK but in the majority of the cases the temperatures do not exceed 1.6 MK. The footpoints of jets have temperatures of a maximum of 2.5 MK though in a single event scanned a minute after the flaring the measured temperature was 12 MK. The jets are produced by multiple microflaring in the transition region and corona. Chromospheric emission was only detected in their footpoints and was only associated with downflows. The Doppler shift measurements in the quiet Sun transient brightenings confirmed that these events do not produce jet-like phenomena. The plasma flows in these phenomena remain trapped in closed loops.

astro-ph.SR↗

arXiv2012

Atomically flat interface between a single-terminated LaAlO3 substrate and SrTiO3 thin film is insulating

The surface termination of (100)-oriented LaAlO3 (LAO) single crystals was examined by atomic force microscopy and optimized to produce a single-terminated atomically flat surface by annealing. Then the atomically flat STO film was achieved on a single-terminated LAO substrate, which is expected to be similar to the n-type interface of two-dimensional electron gas (2DEG), i.e., (LaO)-(TiO2). Particularly, that can serve as a mirror structure for the typical 2DEG heterostructure to further clarify the origin of 2DEG. This newly developed interface was determined to be highly insulating. Additionally, this study demonstrates an approach to achieve atomically flat film growth based on LAO substrates.

cond-mat.mtrl-sci↗