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Z. K. Liu

Publications and source records attributed to Z. K. Liu.

45 records · Page 3Linked to original sources
arXiv2016

Observation of the Type-II Weyl Semimetal Phase in MoTe2

Topological Weyl semimetal (TWS), a new state of quantum matter, has sparked enormous research interest recently. Possessing unique Weyl fermions in the bulk and Fermi arcs on the surface, TWSs offer a rare platform for realizing many exotic physical phenomena. TWSs can be classified into type-I that respect Lorentz symmetry and type-II that do not. Here, we directly visualize the electronic structure of MoTe2, a recently proposed type-II TWS. Using angle-resolved photoemission spectroscopy (ARPES), we unravel the unique surface Fermi arcs, in good agreement with our ab-initio calculations. From spin-resolved ARPES measurements, we demonstrate the non-degenerate spin-texture of surface Fermi-arcs, thereby proving their non-trivial topological nature. Our work not only lead to new understandings of the unusual properties discovered in this family of compounds, but also allow for the further exploration of exotic properties and practical applications of type-II TWSs, as well as the interplay between superconductivity (MoTe2 was discovered to be superconducting recently) and their topological order.

cond-mat.mtrl-sci↗
arXiv2015

Interfacial mode coupling as the origin of the enhancement of Tc in FeSe films on SrTiO3

Single unit cell films of iron selenide (1UC FeSe) grown on SrTiO3 (STO) substrates have recently shown superconducting energy gaps opening at temperatures close to the boiling point of liquid nitrogen (77 K), a record for iron-based superconductors. Towards understanding why Cooper pairs form at such high temperatures, a primary question to address is the role, if any, of the STO substrate. Here, we report high resolution angle resolved photoemission spectroscopy (ARPES) results which reveal an unexpected and unique characteristic of the 1UC FeSe/STO system: shake-off bands suggesting the presence of bosonic modes, most likely oxygen optical phonons in STO, which couple to the FeSe electrons with only small momentum transfer. Such coupling has the unusual benefit of helping superconductivity in most channels, including those mediated by spin fluctuations. Our calculations suggest such coupling is responsible for raising the superconducting gap opening temperature in 1UC FeSe/STO. This discovery suggests a pathway to engineer high temperature superconductors.

cond-mat.supr-con↗
arXiv2013

Discovery of a Three-dimensional Topological Dirac Semimetal, Na3Bi

Three-dimensional (3D) topological Dirac semimetals (TDSs) represent a novel state of quantum matter that can be viewed as '3D graphene'. In contrast to two-dimensional (2D) Dirac fermions in graphene or on the surface of 3D topological insulators, TDSs possess 3D Dirac fermions in the bulk. The TDS is also an important boundary state mediating numerous novel quantum states, such as topological insulators, Weyl semi-metals, Axion insulators and topological superconductors. By investigating the electronic structure of Na3Bi with angle resolved photoemission spectroscopy, we discovered 3D Dirac fermions with linear dispersions along all momentum directions for the first time. Furthermore, we demonstrated that the 3D Dirac fermions in Na3Bi were protected by the bulk crystal symmetry. Our results establish that Na3Bi is the first model system of 3D TDSs, which can also serve as an ideal platform for the systematic study of quantum phase transitions between rich novel topological quantum states.

cond-mat.mtrl-sci↗
arXiv2009

Large Gap Topological Insulator Bi2Te3 with a Single Dirac Cone on the Surface

We investigate the surface state of Bi$_2$Te$_3$ using angle resolved photoemission spectroscopy (ARPES) and transport measurements. By scanning over the entire Brillouin zone (BZ), we demonstrate that the surface state consists of a single non-degenerate Dirac cone centered at the $Γ$ point. Furthermore, with appropriate hole (Sn) doping to counteract intrinsic n-type doping from vacancy and anti-site defects, the Fermi level can be tuned to intersect only the surface states, indicating a full energy gap for the bulk states, consistent with a carrier sign change near this doping in transport properties. Our experimental results establish for the first time that Bi$_2$Te$_3$ is a three dimensional topological insulator with a single Dirac cone on the surface, as predicted by a recent theory.

cond-mat.mtrl-sci↗
arXiv2009

A Finite-temperature First-principles Approach to Spin Fluctuation in BaFe_2As_2

Thermodynamic flunctuations in BaFe2As2 is addressed with a first-principles formulation of the Helmholtz energy by accounting for the mixture of various electronic states each distinguished by different spin orientation distributions. We find that it is the spin exchange coupling in the inter-plane c direction that dictates the spin density wave ordering. We quantitatively predicted the pressure dependence of the spin density wave ordering, the Schottky anomaly, and the temperature dependence of thermal populations of spin structures, all in agreement with available experimental data.

cond-mat.supr-con↗
arXiv2007

Mixed-State Dissipation in Zero Temperature Limit in $MgB_2$ Thin Films

We have studied mixed-state dissipation in epitaxial MgB$_2$ thin films by measurements of resistive transition, current-voltage characteristics, Hall effect, and point-contact tunnelling spectrum. We found that unlike single gap superconductors with negligible vortex quantum fluctuations in which vortices are frozen at T=0 K, finite zero-temperature dissipation due to vortex motion exists in MgB$_2$ over a wide magnetic field range. This dissipation was found to be associated with proliferation of quasiparticles from the $π$-band of MgB$_2$. The result shows that the vortex fluctuations are enhanced by two-band superconductivity in MgB$_2$ and we suggest that the vortex quantum fluctuation is a possible cause of the non-vanishing zero-temperature dissipation.

cond-mat.supr-con↗
arXiv2005

Structural and transport properties of epitaxial NaxCoO2 thin films

We have studied structural and transport properties of epitaxial NaxCoO2 thin films on (0001) sapphire substrate prepared by topotaxially converting an epitaxial Co3O4 film to NaxCoO2 with annealing in Na vapor. The films are c axis oriented and in-plane aligned with [10 1 0] NaxCoO2 rotated by 30 degrees from [10 1 0] sapphire. Different Na vapor pressures during the annealing resulted in films with different Na concentrations, which showed distinct transport properties.

cond-mat.str-el↗
arXiv2002

In situ epitaxial MgB2 thin films for superconducting electronics

A thin film technology compatible with multilayer device fabrication is critical for exploring the potential of the 39-K superconductor magnesium diboride for superconducting electronics. Using a Hybrid Physical-Chemical Vapor Deposition (HPCVD) process, it is shown that the high Mg vapor pressure necessary to keep the MgB$_2$ phase thermodynamically stable can be achieved for the {\it in situ} growth of MgB$_2$ thin films. The films grow epitaxially on (0001) sapphire and (0001) 4H-SiC substrates and show a bulk-like $T_c$ of 39 K, a $J_c$(4.2K) of $1.2 \times 10^7$ A/cm$^2$ in zero field, and a $H_{c2}(0)$ of 29.2 T in parallel magnetic field. The surface is smooth with a root-mean-square roughness of 2.5 nm for MgB$_2$ films on SiC. This deposition method opens tremendous opportunities for superconducting electronics using MgB$_2$.

cond-mat.mtrl-sci↗