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Z. Kašpar

Publications and source records attributed to Z. Kašpar.

4 recordsLinked to original sources

Observation of Ultrafast Coherent and Incoherent Spin Torques via Terahertz Spin-Hall Magnetoresistance

Spin Hall magnetoresistance (SMR) is a cornerstone effect in spintronics, enabling the electrical readout of magnetic states through spin-orbit coupling at interfaces. Despite its widespread use, experimental studies of SMR are limited to static (DC) or low-frequency (GHz) regimes, leaving the ultrafast dynamics of interfacial spin transport in the terahertz (THz) frequency window entirely unexplored. Here, we report the observation of SMR spanning from DC to 1.5 THz in the model SMR system YIG/Pt, bridging the divide between electronic transport and THz optics. We demonstrate that the SMR response exhibits a pronounced low-pass behavior, decreasing significantly with frequency and vanishing above 1.5 THz. Through a dynamic model, we reveal that this unexpected spectral decay arises from a fundamental competition between two distinct interfacial spin-magnetization coupling mechanisms: the frequency-independent coherent spin torque, and an incoherent torque mediated by thermal magnons. Our analysis shows that the reduced THz SMR signal reflects the nonzero response time of the magnon chemical potential, which facilitates the increased outflow of incoherent magnons through the interface at high frequencies. These results resolve the microscopic nature of spin-torque generation at ultrafast timescales. Crucially, this work establishes THz SMR as a powerful, non-contact methodology capable of probing spin-magnon coupling in magnetic thin films, providing the essential tool for advancing the next generation of spintronic devices, particularly those based on high-frequency antiferromagnets and emerging altermagnetic materials.

cond-mat.mes-hall↗

Spin-to-charge-current conversion in altermagnetic candidate RuO$_2$ probed by terahertz emission spectroscopy

Using the THz emission spectroscopy, we investigate ultrafast spin-to-charge current conversion in epitaxial thin films of the altermagnetic candidate RuO$_2$. We perform a quantitative analysis of competing effects that can contribute to the measured anisotropic THz emission. These include the anisotropic inverse spin splitter and spin Hall effects in RuO$_2$, the anisotropic conductivity of RuO$_2$, and the birefringence of the TiO$_2$ substrate. We observe that the leading contribution to the measured signals comes from the anisotropic inverse spin Hall effect, with an average spin-Hall angle of $2.4\times 10^{-3}$ at room temperature. In comparison, a possible contribution from the altermagnetic inverse spin-splitter effect is found to be approximately $2-4\times 10^{-4}$. Our work stresses the importance of carefully disentangling spin-dependent phenomena that can be generated by the unconventional altermagnetic order, from the effects of the relativistic spin-orbit coupling.

cond-mat.mes-hall↗

Optically gated terahertz-field-driven switching of antiferromagnetic CuMnAs

We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically generated transiently conductive parallel channel in the semiconducting substrate underneath the metallic layer. The photocarrier lifetime determines the time scale of the suppression. As we do not observe a direct impact of the optical pulse on the state of CuMnAs, all observed effects are primarily mediated by the substrate. The sample region of suppressed resistance switching is given by the optical spot size, thereby making our scheme potentially applicable for transient low-power masking of structured areas with feature sizes of ~100 nm and even smaller.

physics.app-ph↗

Current-induced fragmentation of antiferromagnetic domains

Electrical and optical pulsing allow for manipulating the order parameter and magnetoresistance of antiferromagnets, opening novel prospects for digital and analog data storage in spintronic devices. Recent experiments in CuMnAs have demonstrated giant resistive switching signals in single-layer antiferromagnetic films together with analog switching and relaxation characteristics relevant for neuromorphic computing. Here we report simultaneous electrical pulsing and scanning NV magnetometry of antiferromagnetic domains in CuMnAs performed using a pump-probe scheme. We observe a nano-scale fragmentation of the antiferromagnetic domains, which is controlled by the current amplitude and independent on the current direction. The fragmented antiferromagnetic state conserves a memory of the pristine domain pattern, towards which it relaxes. Domain fragmentation coexists with permanent switching due to the reorientation of the antiferromagnetic moments. Our simultaneous imaging and resistance measurements show a correlation between the antiferromagnetic domain fragmentation and the largest resistive switching signals in CuMnAs.

cond-mat.mtrl-sci↗