arXiv subjects

Z. L. Huang

Publications and source records attributed to Z. L. Huang.

2 recordsLinked to original sources

arXiv2021

Vapor transport growth of MnBi2Te4 and related compounds

Motivated by fine tuning of the magnetic and topological properties of MnBi$_2$Te$_4$ via defect engineering, in this work, we report the crystal growth of MnBi$_2$Te$_4$ and related compounds using vapor transport method and characterization of vapor transported crystals by measuring elemental analysis, magnetic and transport properties, and scanning tunneling microscopy. For the growth of MnBi$_2$Te$_4$ single crystals, I$_2$, MnI$_2$ , MnCl$_2$, TeCl$_4$, or MoCl$_5$ are all effective transport agents; chemical transportation occurs faster in the presence of iodides than chlorides. MnBi$_2$Te$_4$ crystals can be obtained in the temperature range 500$^\circ$C-590$^\circ$C using I$_2$ as the transport agent. We further successfully grow MnSb$_2$Te$_4$, MnBi$_{2-x}$Sb$_x$Te$_4$, and Sb-doped MnBi$_4$Te$_7$ crystals. A small temperature gradient $<$20$^\circ$C between the hot and cold ends of the growth cmpoule is critical for the successful crystal growth of MnBi$_2$Te$_4$ and related compounds. Compared to flux grown crystals, vapor transported crystals tend to be Mn stoichiometric, and Sb-bearing compositions have more Mn/Sb site mixing. The vapor transport growth provides a new materials synthesis approach to fine tuning the magnetic and topological properties of these intrinsic magnetic topological insulators.

cond-mat.mtrl-sci↗

arXiv2019

Crystal growth and magnetic structure of MnBi2Te4

Millimeter-sized MnBi$_2$Te$_4$ single crystals are grown out of Bi-Te flux and characterized by measuring magnetic and transport properties, scanning tunneling microscope (STM) and spectroscopy (STS). The magnetic structure of MnBi$_2$Te$_4$ below T$_N$ is determined by powder and single crystal neutron diffraction measurements. Below T$_N$=24\,K, Mn$^{2+}$ moments order ferromagnetically in the \textit{ab} plane but antiferromagnetically along the crystallographic \textit{c} axis. The ordered moment is 4.04(13) $μ_{B}$/Mn at 10\,K and aligned along the crystallographic \textit{c}-axis. The electrical resistivity drops upon cooling across T$_N$ or when going across the metamagnetic transition in increasing fields below T$_N$. A critical scattering effect was observed in the vicinity of T$_N$ in the temperature dependence of thermal conductivity. However, A linear temperature dependence was observed for thermopower in the temperature range 2K-300K without any anomaly around T$_N$. These indicate that the magnetic order in Mn-Te layer has negligible effect on the electronic band structure, which makes possible the realization of proposed topological properties in MnBi$_2$Te$_4$ after fine tuning of the electronic band structure.

cond-mat.mtrl-sci↗