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Z. L. Xiao

Publications and source records attributed to Z. L. Xiao.

At least 19 recordsLinked to original sources

Reentrant Metallic Behavior in the Weyl Semimetal NbP

We report the occurrence of reentrant metallic behavior in the Weyl semimetal NbP. When the applied magnetic field $H$ is above a critical value $H_c$, a reentrance appears as a peak in the temperature dependent resistivity $ρ_{xx}(T)$ at $T$ = $T_p$, similar to that observed in graphite where it was attributed to local superconductivity. The $T_p(H)$ relationship follows a power-law dependence $T_p\sim(H-H_c)^{1/v}$ where $v$ can be derived from the temperature dependence of the zero-field resistivity $ρ_0(T) \sim T^v$. From concurrent measurements of the transverse $ρ_{xx}(T)$ and Hall $ρ_{xy}(T)$ magnetoresistivities, we reveal a clear correlation between the rapidly increasing $ρ_{xy}(T)$ and the occurrence of a peak in the $ρ_{xx}(T)$ curve. Quantitative analysis indicates that the reentrant metallic behavior arises from the competition of the magneto conductivity $σ_{xx}(T)$ with an additional component $Δσ_{xx}(T)=κ_Hσ_{xx}(T)$ where $κ_H=[ρ_{xy}(T)/ρ_{xx}(T)]^2$ is the Hall factor. We find that the Hall factor ($κ_H \approx 0.4$) at peak temperature $T_p$ is nearly field-independent, leading to the observed $T_p(H)$ relationship. Furthermore, the reentrant metallic behavior in $ρ_{xx}(T)$ also is reflected in the behavior of $ρ_{xx}(H)$ that ranges from non-saturating at $T>70$ K to saturation at liquid helium temperatures. The latter can be explained with the magnetic field dependence of the Hall factor $κ_H(H)$. Our studies demonstrate that a semiclassical theory can account for the 'anomalies' in the magnetotransport phenomena of NbP without invoking an exotic mechanism.

cond-mat.mtrl-sci

Separation of Electron and Hole Dynamics in the Semimetal LaSb

We report investigations on the magnetotransport in LaSb, which exhibits extremely large magnetoresistance (XMR). Foremost, we demonstrate that the resistivity plateau can be explained without invoking topological protection. We then determine the Fermi surface from Shubnikov - de Haas (SdH) quantum oscillation measurements and find good agreement with the bulk Fermi pockets derived from first principle calculations. Using a semiclassical theory and the experimentally determined Fermi pocket anisotropies, we quantitatively describe the orbital magnetoresistance, including its angle dependence. We show that the origin of XMR in LaSb lies in its high mobility with diminishing Hall effect, where the high mobility leads to a strong magnetic field dependence of the longitudinal magnetoconductance. Unlike a one-band material, when a system has two or more bands (Fermi pockets) with electron and hole carriers, the added conductance arising from the Hall effect is reduced, hence revealing the latent XMR enabled by the longitudinal magnetoconductance. With diminishing Hall effect, the magnetoresistivity is simply the inverse of the longitudinal magnetoconductivity, enabling the differentiation of the electron and hole contributions to the XMR, which varies with the strength and orientation of the magnetic field. This work demonstrates a convenient way to separate the dynamics of the charge carriers and to uncover the origin of XMR in multi-band materials with anisotropic Fermi surfaces. Our approach can be readily applied to other XMR materials.

cond-mat.mtrl-sci

Origin of the Extremely Large Magnetoresistance in the Semimetal YSb

Electron-hole (e-h) compensation is a hallmark of multi-band semimetals with extremely large magnetoresistance (XMR) and has been considered to be the basis for XMR. Recent spectroscopic experiments, however, reveal that YSb with non-saturating magnetoresistance is uncompensated, questioning the e-h compensation scenario for XMR. Here we demonstrate with magnetoresistivity and angle dependent Shubnikov - de Haas (SdH) quantum oscillation measurements that YSb does have nearly perfect e-h compensation, with a density ratio of $0.95$ for electrons and holes. The density and mobility anisotropy of the charge carriers revealed in the SdH experiments allow us to quantitatively describe the magnetoresistance with an anisotropic multi-band model that includes contributions from all Fermi pockets. We elucidate the role of compensated multi-bands in the occurrence of XMR by demonstrating the evolution of calculated magnetoresistances for a single band and for various combinations of electron and hole Fermi pockets.

cond-mat.mtrl-sci

Pinning, Flux Diodes, and Ratchets for Vortices Interacting with Conformal Pinning Arrays

A conformal pinning array can be created by conformally transforming a uniform triangular pinning lattice to produces a new structure in which the six-fold ordering of the original lattice is conserved but where there is a spatial gradient in the density of pinning sites. Here we examine several aspects of vortices interacting with conformal pinning arrays and how they can be used to create a flux flow diode effect for driving vortices in different directions across the arrays. Under the application of an ac drive, a pronounced vortex ratchet effect occurs where the vortices flow in the easy direction of the array asymmetry. When the ac drive is applied perpendicular to the asymmetry direction of the array, it is possible to realize a transverse vortex ratchet effect where there is a generation of a dc flow of vortices perpendicular to the ac drive due to the creation of a noise correlation ratchet by the plastic motion of the vortices. We also examine vortex transport simulations in experiments and compare the pinning effectiveness of conformal arrays to uniform triangular pinning arrays. We find that a triangular array generally pins the vortices more effectively at the first matching field and below, while the conformal array is more effective at higher fields where interstitial vortex flow occurs.

cond-mat.supr-con

Enhancing superconducting critical current by randomness

The key ingredient of high critical currents in a type-II superconductor is defect sites that 'pin' vortices. Contrary to earlier understanding on nano-patterned artificial pinning, here we show unequivocally the advantages of a random pinscape over an ordered array in a wide magnetic field range. We reveal that the better performance of a random pinscape is due to the variation of its local-density-of-pinning-sites (LDOPS), which mitigates the motion of vortices. This is confirmed by achieving even higher enhancement of the critical current through a conformally mapped random pinscape, where the distribution of the LDOPS is further enlarged. The demonstrated key role of LDOPS in enhancing superconducting critical currents gets at the heart of random versus commensurate pinning. Our findings highlight the importance of random pinscapes in enhancing the superconducting critical currents of applied superconductors.

cond-mat.supr-con

Origin of the turn-on temperature behavior in WTe$_2$

A hallmark of materials with extremely large magnetoresistance (XMR) is the transformative 'turn-on' temperature behavior: when the applied magnetic field $H$ is above certain value, the resistivity versus temperature $ρ(T)$ curve shows a minimum at a field dependent temperature $T^*$, which has been interpreted as a magnetic-field-driven metal-insulator transition or attributed to an electronic structure change. Here, we demonstrate that $ρ(T)$ curves with turn-on behavior in the newly discovered XMR material WTe$_2$ can be scaled as MR $\sim(H/ρ_0)^m$ with $m\approx 2$ and $ρ_0$ being the resistivity at zero-field. We obtained experimentally and also derived from the observed scaling the magnetic field dependence of the turn-on temperature $T^* \sim (H-H_c)^ν$ with $ν\approx 1/2$, which was earlier used as evidence for a predicted metal-insulator transition. The scaling also leads to a simple quantitative expression for the resistivity $ρ^* \approx 2 ρ_0$ at the onset of the XMR behavior, which fits the data remarkably well. These results exclude the possible existence of a magnetic-field-driven metal-insulator transition or significant contribution of an electronic structure change to the low-temperature XMR in WTe$_2$. This work resolves the origin of the turn-on behavior observed in several XMR materials and also provides a general route for a quantitative understanding of the temperature dependence of MR in both XMR and non-XMR materials.

cond-mat.mtrl-sci

Temperature dependent three-dimensional anisotropy of the magnetoresistance in WTe$_2$

Extremely large magnetoresistance (XMR) was recently discovered in WTe$_2$, triggering extensive research on this material regarding the XMR origin. Since WTe$_2$ is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe$_2$: (1) WTe$_2$ is electronically 3D with a mass anisotropy as low as $2$, as revealed by the 3D scaling behavior of the resistance $R(H,θ)=R(\varepsilon_θH)$ with $\varepsilon_θ=(\cos^2 θ+ γ^{-2}\sin^2 θ)^{1/2}$, $θ$ being the magnetic field angle with respect to c-axis of the crystal and $γ$ being the mass anisotropy; (2) the mass anisotropy $γ$ varies with temperature and follows the magnetoresistance behavior of the Fermi liquid state. Our results not only provide a general scaling approach for the anisotropic magnetoresistance but also are crucial for correctly understanding the electronic properties of WTe$_2$, including the origin of the remarkable 'turn-on' behavior in the resistance versus temperature curve, which has been widely observed in many materials and assumed to be a metal-insulator transition.

cond-mat.mtrl-sci

Realization of Artificial Ice Systems for Magnetic Vortices in a Superconducting MoGe Thin-film with Patterned Nanostructures

We report an anomalous matching effect in MoGe thin films containing pairs of circular holes arranged in such a way that four of those pairs meet at each vertex point of a square lattice. A remarkably pronounced fractional matching was observed in the magnetic field dependences of both the resistance and the critical current. At the half matching field the critical current can be even higher than that at zero field. This has never been observed before for vortices in superconductors with pinning arrays. Numerical simulations within the nonlinear Ginzburg-Landau theory reveal a square vortex ice configuration in the ground state at the half matching field and demonstrate similar characteristic features in the field dependence of the critical current, confirming the experimental realization of an artificial ice system for vortices for the first time.

cond-mat.supr-con

Catalyst-Free Growth of Millimeter-Long Topological Insulator Bi2Se3 Nanoribbons and the Observation of pi Berry Phase

We report the growth of single-crystalline Bi2Se3 nanoribbons with lengths up to several millimeters via a catalyst-free physical vapor deposition method. Scanning transmission electron microscopy analysis reveals that the nanoribbons grow along the (1120) direction. We obtain a detailed characterization of the electronic structure of the Bi2Se3 nanoribbons from measurements of Shubnikov-de Haas (SdH) quantum oscillations. Angular dependent magneto-transport measurements reveal a dominant two-dimensional contribution originating from surface states and weak contribution from the bulk states. The catalyst-free synthesis yields high-purity nanocrystals enabling the observation of a large number of SdH oscillation periods and allowing for an accurate determination of the pi-Berry phase, one of the key features of Dirac fermions in topological insulators. The long-length nanoribbons can empower the potential for fabricating multiple nanoelectronic devices on a single nanoribbon.

cond-mat.mes-hall

Large Magnetoresistance Oscillations in Mesoscopic Superconductors Due to Current-Excited Moving Vortices

We show in the case of a superconducting Nb ladder that a mesoscopic superconductor typically exhibits magnetoresistance oscillations whose amplitude and temperature dependence are different from those stemming from the Little-Parks effect. We demonstrate that these large resistance oscillations (as well as the monotonic background on which they are superimposed) are due to {\it current-excited moving vortices}, where the applied current in competition with the oscillating Meissner currents imposes/removes the barriers for vortex motion in increasing magnetic field. Due to the ever present current in transport measurements, this effect should be considered in parallel with the Little-Parks effect in low-$T_c$ samples, as well as with recently proposed thermal activation of dissipative vortex-antivortex pairs in high-$T_c$ samples.

cond-mat.supr-con

Doping and Irradiation Controlled Vortex Pinning Behavior in BaFe2(As1-xPx)2 Single Crystals

We report on the systematic evolution of vortex pinning behavior in isovalent doped single crystals of BaFe2(As1-xPx)2. Proceeding from optimal doped to ovedoped samples, we find a clear transfor- mation of the magnetization hysteresis from a fishtail behavior to a distinct peak effect followed by a reversible magnetization and Bean Livingston surface barriers. Strong point pinning dominates the vortex behavior at low fields whereas weak collective pinning determines the behavior at higher fields. In addition to doping effects, we show that particle irradiation by energetic protons can tune vortex pinning in these materials.

cond-mat.supr-con

Magnetoresistance Oscillations in Granular Superconducting Niobium Nitride Nanowires

We report on magnetoresistance oscillations in superconducting NbNx nanowires synthesized through ammonia gas annealing of NbSe3 precursor nanostructures. Even though the transverse dimensions of the nanowires are much larger than the superconducting coherence length, the voltage-current characteristics of these nanowires at low temperatures are reminiscent of one-dimensional superconductors where quantum phase slips are associated with the origin of dissipation. We show that both the magnetoresistance oscillations and voltage-current characteristics observed in this work result from the granular structure of our nanowires.

cond-mat.supr-con

Multi-gap nodeless superconductivity in iron selenide FeSe$_x$: evident from quasiparticle heat transport

The in-plane thermal conductivity $κ$ of the iron selenide superconductor FeSe$_x$ ($T_c$ = 8.8 K) were measured down to 120 mK and up to 14.5 T ($\simeq 3/4 H_{c2}$). In zero field, the residual linear term $κ_0/T$ at $ T \to 0$ is only about 16 $μ$W K$^{-2}$ cm$^{-1}$, less than 4% of its normal state value. Such a small $κ_0/T$ does not support the existence of nodes in the superconducting gap. More importantly, the field dependence of $κ_0/T$ in FeSe$_x$ is very similar to that in NbSe$_2$, a typical multi-gap s-wave superconductor. We consider our data as strong evidence for multi-gap nodeless superconductivity in FeSe$_x$. This kind of superconducting gap structure may be generic for all Fe-based superconductors.

cond-mat.supr-con

Growth and Superconductivity of FeSex Crystals

Iron selenide (FeSex) crystals with lateral dimensions up to millimeters were grown via a vapor self-transport method. The crystals consist of the dominant alpha - phase with trace amounts of beta- phase as identified by powder x-ray diffraction. With four-probe resistance measurements we obtained a zero-resistance critical temperature of 7.5 K and a superconducting onset transition temperature of up to 11.8 K in zero magnetic field as well as an anisotropy of 1.5 +- 0.1 for the critical field. Magnetization measurements on individual crystals reveal the co-existence of superconductivity and ferromagnetism.

cond-mat.supr-con

Resistance Anomaly in Disordered Superconducting Films

We report on a resistance anomaly in disordered superconducting films containing arrays of irregularly distributed nanoscale holes. At high driving currents, peaks appear in the resistance as a function of temperature, with peak values up to 2% above the classic normal-state resistance. We attribute the observed resistance anomaly to dissipation-induced granularity which enhances the contributions from fluctuation-induced reduction of the density of states of the quasiparticles. The granular feature of a disordered superconducting film originates from the inhomogeneous temperature distribution caused by the variation of the local dissipation and/or heat transfer.

cond-mat.supr-con

Nickel Antidot Arrays on Anodic Alumina Substrates

Large area nickel antidot arrays with density up to 10^10 /cm^2 have been fabricated by depositing nickel onto anodic aluminum oxide membranes that contain lattices of nanopores. Electron microscopy images show a high degree of order of the antidot arrays. Various sizes and shapes of the antidots were observed with increasing thickness of the deposited nickel. New features appear in the antidot arrays in both magnetization and transport measurements when the external magnetic field is parallel to the current direction, including an enhancement and a nonmonotonous field dependence of the magnetoresistance, larger values of the coercive field and remanence moment, and smaller saturation field.

cond-mat.mtrl-sci

Superconducting Transition and Vortex Pinning in Nb Films Patterned with Nano-scale Hole-arrays

Nb films containing extended arrays of holes with 45-nm diameter and 100-nm spacing have been fabricated using anodized aluminum oxide (AAO) as substrate. Pronounced matching effects in the magnetization and Little-Parks oscillations of the superconducting critical temperature have been observed in fields up to 9 kOe. Flux pinning in the patterned samples is enhanced by two orders of magnitude as compared to unpatterned reference samples in applied fields exceeding 5 kOe. Matching effects are a dominant contribution to vortex pinning at temperatures as low as 4.2 K due to the extremely small spacing of the holes.

cond-mat.supr-con

Edge and Bulk Transport in the Mixed State of a Type-II Superconductor

By comparing the voltage-current (V-I) curves obtained before and after cutting a sample of 2H-NbSe2, we separate the bulk and edge contributions to the transport current at various dissipation levels and derive their respective V- I curves and critical currents. We find that the edge contribution is thermally activated across a current dependent surface barrier. By contrast the bulk V-I curves are linear, as expected from the free flux flow model. The relative importance of bulk and edge contributions is found to depend on dissipation level and sample dimensions. We further show that the peak effect is a sharp bulk phenomenon and that it is broadened by the edge contribution.

cond-mat.supr-con