arXiv subjects

Z. Q. Liu

Publications and source records attributed to Z. Q. Liu.

62 records · Page 4Linked to original sources

arXiv2012

Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3-x single crystals

We report novel magnetotransport properties of the low temperature Fermi liquid in SrTiO3-x single crystals. The classical limit dominates the magnetotransport properties for a magnetic field perpendicular to the sample surface and consequently a magnetic-field induced resistivity minimum emerges. While for the field applied in plane and normal to the current, the linear magnetoresistance (MR) starting from small fields (< 0.5 T) appears. The large anisotropy in the transverse MRs reveals the strong surface interlayer scattering due to the large gradient of oxygen vacancy concentration from the surface to the interior of SrTiO3-x single crystals. Moreover, the linear MR in our case was likely due to the inhomogeneity of oxygen vacancies and oxygen vacancy clusters, which could provide experimental evidences for the unusual quantum linear MR proposed by Abrikosov [A. A. Abrikosov, Phys. Rev. B 58, 2788 (1998)].

cond-mat.mtrl-sci↗

arXiv2012

Measurement of $B^0 \to J/ψη^{(}{}'{}^{)}$ and Constraint on the $η-η'$ Mixing Angle

We measure the branching fractions of $B^{0} \to J/ψη^{(}{}'{}^{)}$ decays with the complete Belle data sample of $772 \times 10^{6}$ $B\bar{B}$ events collected at the $Υ(4S)$ resonance with the Belle detector at the KEKB asymmetric-energy $e^+ e^-$ collider. The results for the branching fractions are: ${\cal B}(B^{0} \to J/ψη)=(12.3 \pm ^{1.8}_{1.7} \pm 0.7) \times 10^{-6}$ and ${\cal B}(B^{0} \to J/ψη') < 7.4 \times 10^{-6}$ at 90% confidence level. The $η-η'$ mixing angle is constrained to be less than $ 42.2^{\circ}$ at 90% confidence level.

hep-ex↗

arXiv2012

Measurement of the CP-violation Parameter sin2$ϕ_1$ with a New Tagging Method at the $Υ(5S)$ Resonance

We report a measurement of the CP-violation parameter sin2$ϕ_1$ at the $Υ(5S)$ resonance using a new tagging method, called "$B$-$π$ tagging." In $Υ(5S)$ decays containing a neutral $B$ meson, a charged $B$, and a charged pion, the neutral $B$ is reconstructed in the $J/ψK_S^0$ CP-eigenstate decay channel. The initial flavor of the neutral $B$ meson at the moment of the $Υ(5S)$ decay is opposite to that of the charged $B$ and may thus be inferred from the charge of the pion without reconstructing the charged $B$. From the asymmetry between $B$-$π^+$ and $B$-$π^-$ tagged $J/ψK_S^0$ yields, we determine sin2$ϕ_1$ = 0.57 $\pm$ 0.58(stat) $\pm$ 0.06(syst). The results are based on 121 fb$^{-1}$ of data recorded by the Belle detector at the KEKB $e^+ e^-$ collider.

hep-ex↗

arXiv2011

Magnetoresistance of 2D and 3D Electron Gas in LaAlO3/SrTiO3 Heterostructures: Influence of Magnetic Ordering, Interface Scattering and Dimensionality

Magnetoresistance (MR) anisotropy in LaAlO3/SrTiO3 (LAO/STO) interfaces is compared between samples prepared in high oxygen partial pressure (PO2) of 10-4 mbar exhibiting quasi-two-dimensional (quasi-2D) electron gas and low PO2 of 10-6 mbar exhibiting 3D conductivity. While MR of an order of magnitude larger was observed in low PO2 samples compared to those of high PO2 samples, large MR anisotropies were observed in both cases. The MR with the out-of-plane field is always larger compared to the MR with in-plane field suggesting lower dissipation of electrons from interface versus defect scattering. The quasi-2D interfaces show a negative MR at low temperatures while the 3D interfaces show positive MR for all temperatures. Furthermore, the angle relationship of MR anisotropy for these two different cases and temperature dependence of in-plane MR are also presented. Our study demonstrates that MR can be used to distinguish the dimensionality of the charge transport and various (defect, magnetic center, and interface boundary) scattering processes in this system.

cond-mat.str-el↗

arXiv2011

Carrier freeze-out induced metal-insulator transition in oxygen deficient SrTiO3 films

We report the optical, electrical transport, and magnetotransport properties of high quality oxygen deficient SrTiO3 (STO) single crystal film fabricated by pulsed laser deposition and reduced in the vacuum chamber. The oxygen vacancy distribution in the thin film is expected to be uniform. By comparing the electrical properties with oxygen deficient bulk STO, it was found that the oxygen vacancies in bulk STO is far from uniform over the whole material. The metal-insulator transition (MIT) observed in the oxygen deficient STO film was found to be induced by the carrier freeze-out effect. The low temperature frozen state can be re-excited by an electric field, Joule heating, and surprisingly also a large magnetic field.

cond-mat.mtrl-sci↗

arXiv2011

Search for CP Violation in D Meson Decays to phi pi+

We search for CP violation in Cabibbo-suppressed charged D meson decays by measuring the difference between the CP violating asymmetries for the Cabibbo-suppressed decays D+ -> K+K-pi+ and the Cabibbo-favored decays Ds -> K+K-pi+ in the K+K- mass region of the phi resonance. Using 955/fb of data collected with the Belle detector we obtain A_CP(D+ -> phi pi+) = (+0.51 +- 0.28 +- 0.05)%. The measurement improves the sensitivity of previous searches by more than a factor of five. We find no evidence for direct CP violation.

hep-ex↗

arXiv2010

Nonlinear Insulator in Complex Oxides

The insulating state is one of the most basic electronic phases in condensed matter. This state is characterised by an energy gap for electronic excitations that makes an insulator electrically inert at low energy. However, for complex oxides, the very concept of an insulator must be re-examined. Complex oxides behave differently from conventional insulators such as SiO2, on which the entire semiconductor industry is based, because of the presence of multiple defect levels within their band gap. As the semiconductor industry is moving to such oxides for high-dielectric (high-k) materials, we need to truly understand the insulating properties of these oxides under various electric field excitations. Here we report a new class of material called nonlinear insulators that exhibits a reversible electric-field-induced metal-insulator transition. We demonstrate this behaviour for an insulating LaAlO3 thin film in a metal/LaAlO3/Nb-SrTiO3 heterostructure. Reproducible transitions were observed between a low-resistance metallic state and a high-resistance non-metallic state when applying suitable voltages. Our experimental results exclude the possibility that diffusion of the metal electrodes or oxygen vacancies into the LaAlO3 layer is occurring. Instead, the phenomenon is attributed to the formation of a quasi-conduction band (QCB) in the defect states of LaAlO3 that forms a continuum state with the conduction band of the Nb-SrTiO3. Once this continuum (metallic) state is formed, the state remains stable even when the voltage bias is turned off. An opposing voltage is required to deplete the charges from the defect states. Our ability to manipulate and control these defect states and, thus, the nonlinear insulating properties of complex oxides will open up a new path to develop novel devices.

cond-mat.mtrl-sci↗

arXiv2008

Combined fit to BaBar and Belle data on e+e- to pi+pi- psi(2S)

A combined fit is performed to the BaBar and Belle measurements of the e+e- to pi+pi-psi(2S) cross sections for center-of-mass energy between threshold and 5.5 GeV. The resonant parameters of the Y(4360) and Y(4660) are determined. The mass is 4355^{+9}_{-10}\pm 9 MeV/c^2 and the width is 103^{+17}_{-15}\pm 11 MeV/c^2 for the Y(4360), and the mass is 4661^{+9}_{-8}\pm 6 MeV/c^2 and the width is 42^{+17}_{-12}\pm 6 MeV/c^2 for the Y(4660). The production of the Y(4260) in pi+pi-psi(2S) mode is found to be at 2σlevel, and B(Y(4260) to pi+pi-psi(2S))Γ_{e+e-} is found to be less than 4.3 eV/c^2 at the 90% confidence level, or equal to 7.4^{+2.1}_{-1.7} eV/c^2 depending on it interferes with the Y(4360) constructively or destructively. These information will shed light on the understanding of the nature of the Y states observed in initial state radiation processes.

hep-ex↗