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Z. V. Gareeva

Publications and source records attributed to Z. V. Gareeva.

8 recordsLinked to original sources

Terahertz spin-orbit torque as a drive of spin dynamics in the insulating antiferromagnet Cr$_{2}$O$_{3}$

Contrary to conventional wisdom that spin dynamics induced by current are exclusive to metallic magnets, we theoretically predict that such phenomena can also be realized in magnetic insulators, specifically in the magnetoelectric antiferromagnet $\mathrm{Cr}_{2}\mathrm{O}_{3}$. We reveal that the displacement current driven by the THz electric field is able to generate a N{é}el spin-orbit torque in this insulating system. By introducing an alternative electric dipole order parameter arising from the dipole moment at $\mathrm{Cr}^{3+}$ sites, we combine symmetry analysis with a Lagrangian approach and uncover that the displacement current couples to the antiferromagnetic spins and enables ultrafast control of antiferromagnetic order. The derived equations of motion show that this effect competes with the linear magnetoelectric response, offering a novel pathway for manipulating antiferromagnetic order in insulators. Our findings establish insulator antiferromagnets as a viable platform for electric field driven antiferromagnetic spintronics and provide general design principles for non-metallic spin-orbit torque materials.

cond-mat.mtrl-sci

Micromagnetic textures in exchange coupled-ferromagnetic multiferroic films

The development of new computing technologies has given a new stimulus in the study of multiferroics. The use of multiferroics allows the realization of competitive energy efficient scalable logic and storage devices. The low-power consumption in Magneto Electric-Spin Orbital logics and Magnetic Random Access Memory components is provided by magnetoelectric switching in multiferroic based systems using a low-energy electric field. Our work concerns the modelling of the Magneto Electric-Spin Orbital elements with an emphasis on the magnetoelectric component and simulation of magnetization reversal processes in a model system. The use of the proposed approach makes it possible to analyze the influence of dimensional factors (film thicknesses, transverse dimensions, sample shape) affecting the magnetic states of multiferroic nanoelements; taking into interfacial interactions (magnetic anisotropy and interlayer exchange); energy-efficient external influences that allow switching magnetic states using magnetic and electric fields.

cond-mat.mtrl-sci

Anomalies in the dynamics of ferrimagnets near the angular momentum compensation point

In this paper, we elaborate analytical theory of domain wall dynamics close to the angular momentum compensation point based on non-linear dynamic equations derived from the effective Lagrangian of a ferrimagnet. Analysis of the precession angle and domain wall velocity oscillations in post Walker regime in a ferrimagnet is performed. In the framework of the proposed model, we explore dynamic processes in the Walker and post Walker regimes. We show that although spin oscillations quench the dynamics of domain walls near the Walker breakdown field, a further increase of the driving magnetic field increases domain wall speed and mobility. An anomalous behavior of domain wall dynamic properties near the angular momentum compensation point in ferrimagnets is discussed.

cond-mat.mtrl-sci

Multiferroic order parameters in rhombic antiferromagnets. RCrO$_3$

In this paper, we explore magneteoelectricity of rare earth orthochromites from the symmetry point of view. We determine the principal structural order parameters and find their couplings with ferroelectric and magnetic orderings. Our calculations showed that electric dipole moments emerge in the vicinity of Cr3+ ions in the unit cell of RCrO3 due to the displacements of oxygen ions from their highly symmetric positions in the parent perovskite phase (structural instability). We find that the electric dipole moments are arranged in an antiferroelectric mode, so, in essence, RCrO3 are antiferroelectric materials. By classifying the order parameters according to the irreducible representations of the RCrO3 symmetry group (D2h16), we determine the possible couplings between distortive, ferroelectric and magnetic orderings and explore the emerging magnetoelectric structures in these terms. Our analysis makes it possible to explain experimentally observed polarization reversal and the concomitant reorientation of spins in a series of RCrO3 compounds and to predict the possible scenarios of phase transitions in RCrO3.

cond-mat.mtrl-sci

Field induced phase transitions and phase diagrams in BiFeO_3-like multiferroics

The incommensurate magnetic structures and phase diagrams of multiferroics has been explored on the basis of accurate micromagnetic analysis taking into account the spin flexoelecric interaction (Lifshitz invariant). The objects of the study are BiFeO_3-like single crystals and epitaxial films grown on the <111> substrates. The main control parameters are the magnetic field, the magnetic anisotropy, and the epitaxial strain in the case of films. We predict novel quasi-cycloidal structures induced by external magnetic field or by epitaxial strain in the BiFeO_3-films. Phase diagrams representing the regions of homogeneous magnetic states and incommensurate structures stability are constructed for the two essential geometries of magnetic field (magnetic field oriented parallel to the principal crystal axis C_3 and perpendicular to this direction C_3). It is shown that the direction of applied magnetic field substantially affects a set of magnetic phases, properties of incommensurate structures, character of phase transitions. Novel conical type of cycloidal ordering is revealed during the transition from incommensurate cycloidal structure into homogeneous magnetic state. Elaborated phase diagrams allow estimate appropriate combination of control parameters (magnetic field, magnetic anisotropy, exchange stiffness) required to the destruction of cycloidal ordering corresponding to the transition into homogeneous structure. The results show that the magnitude of critical magnetic field suppressing cycloid is lowered in multiferroics films comparing to single crystals, it can be also lowered by the selection of orientation of magnetic field. Our results can be useful for strain engineering of new multiferroic functional materials on demand.

cond-mat.mtrl-sci

Pinning of magnetic domain walls in multiferroics

The behavior of antiferromagnetic domain wall (ADW) against the background of a periodic ferroelectric domain structure has been investigated. It has been shown that the structure and the energy of ADW change due to the interaction with a ferroelectric domain structure. The ferroelectric domain boundaries play the role of pins for magnetic spins, the spin density changes in the vicinity of ferroelectric walls. The ADW energy becomes a periodical function on a coordinate which is the position of ADW relative to the ferroelectric domain structure. It has been shown that the energy of the magnetic domain wall attains minimum values when the center of the ADW coincides with the ferroelectric wall and the periodic ferroelectric structure creates periodic coercitivity for the ADW. The neighbouring equilibrium states of the ADW are separated by a finite potential barrier.

cond-mat.mtrl-sci

Effect of magnetoelectrical interactions on multiferroic domain walls

The antiferromagnetic domain structure of a multiferroic has been investigated in the presence of a ferroelectric domain structure. It has been demonstrated that an inhomogeneous magnetoelectric (flexomagnetoelectric) interaction leads to pinning of antiferromagnetic domain walls at the walls of the ferroelectric domains and to a change in the structure of antiferromagnetic domain walls.

cond-mat.mtrl-sci

Interacting antiferromagnetic and ferroelectric domain structures

The correlation between antiferromagnetic and ferroelectric domain structures in multiferroics has been studied. The role of magnetoelectric interactions in a formation of antiferromagnetic domain structure has been analysed. It has been shown the major physical mechanism binding antiferromagnetic domains to ferroelectrics ones is inhomogeneous flexomagnetoelectric interaction of the Pz((lgrad)lz-lz(divl)) type. The dependences illustrating rearrangement of antiferromagnetic domain pattern together with change of ferroelectric domains thickness has been performed.

cond-mat.mtrl-sci