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Zachary Fisk

Publications and source records attributed to Zachary Fisk.

At least 19 recordsLinked to original sources

Low Temperature Two Fluid State in SmB6

Comprehensive study using DC transport, specific heat, magnetization, and two-coil mutual inductance measurements unveils an understanding of three temperature regimes in SmB$_6$: (i) $T \geq T^{*}$ ($\sim66$K), (ii) $T_g$ ($\sim40$ K) $\leq T < T^{*}$, and (iii) $T < T_g$. Onset of Kondo breakdown below $T^{*}$ releases disorder-driven magnetic fluctuations, which splits the bulk ($\sim116$K) and surface Kondo temperature ($T_k^{s} \approx 7$ K). Below $T_g$, as magnetic fluctuations subside, surface Kondo screening revives, stabilizing the topological surface state and generating an in-gap feature ($\sim2.2$ meV) across which Dirac-like carriers are excited. Nyquist impedance analysis reveals a crossover from purely capacitive to capacitive-inductive behavior, signalling a disorder-driven two-fluid phase of heavy quasiparticles and light, high-mobility carriers below $T_g$. We identify a characteristic length scale, $L_{\nu_0}(T)$, associated with the high-mobility phase, exhibiting an almost divergent trend below $T_k^{s}$. These findings underscore the complex nature of the surface conducting state in SmB$_6$.

cond-mat.str-el

Nanoscale Conducting and Insulating Domains on YbB$_6$

YbB$_6$ is a predicted topological insulator, with experimental evidence for conducting surface states of yet-unproven origin. However, its lack of a natural cleavage plane, and resultant surface-dependent polarity, has obscured its study. We use scanning tunneling microscopy to image the cleaved surface of YbB$_6$, exhibiting several coexisting terminations with distinct atomic structures. Our spectroscopic measurements show band-bending between the terminations, resulting in both conducting and fully-gapped regions. In the conductive regions, we observe spectral peaks that are suggestive of van Hove singularities arising from Rashba spin-split quantum well states. The insulating regions rule out the possibility that YbB$_6$ is a strong topological insulator, while the spin-polarized conducting regions suggest possible utility for spintronic devices.

cond-mat.mes-hall

Mixed-valence state in the dilute-impurity regime of La-substituted SmB$_6$

Homogeneous mixed-valence (MV) behaviour is one of the most intriguing phenomena of $f$-electron systems. Despite extensive efforts, a fundamental aspect which remains unsettled is the determination of the limiting cases for which MV emerges. Here we address this question for SmB$_6$, a prototypical MV system characterized by two nearly-degenerate Sm$^{2+}$ and Sm$^{3+}$ configurations. By combining angle resolved photoemission spectroscopy (ARPES) and x-ray absorption spectroscopy (XAS), we track the evolution of the mean Sm valence, $v_{Sm}$, in the Sm$_x$La$_{1-x}$B$_6$ series. Upon substitution of Sm ions with trivalent La, we observe a linear decrease of valence fluctuations to an almost complete suppression at $x$$\,$=$\,$0.2, with $v_{Sm}$$\,$$\sim$$\,$2; surprisingly, by further reducing $x$, a re-entrant increase of $v_{Sm}$ develops, approaching the value of $v_{imp}$$\,$$\sim$$\,$2.35 in the dilute-impurity limit. Such observation departs from a monotonic evolution of $v_{Sm}$ across the whole series, as well as from the expectation of its convergence to an integer value for $x$$\,$$\rightarrow$$\,$0. Our ARPES and XAS results, complemented by a phenomenological model, demonstrate an unconventional evolution of the MV character in the Sm$_x$La$_{1-x}$B$_6$ series, paving the way to further theoretical and experimental considerations on the concept of MV itself, and its influence on the macroscopic properties of rare-earth compounds in the dilute-to-intermediate impurity regime.

cond-mat.str-el

Exploration of strongly correlated states in SmB6 through a comparison of its two-coil pick-up response to that of Bi2Se3

Earlier studies on the Kondo insulator SmB6 reveal the presence of a bulk Kondo insulating gap between 30 - 50 K, and the emergence of a conducting surface state only below 4 K. Here, we compare the two-coil mutual inductance pick-up response of SmB6 single crystal with that of a conventional topological insulator (TI), Bi2Se3 single crystal. From these studies we identify three distinct temperature regimes for SmB6, viz., (i) T >= T*(~ 66 K), (ii) (40 K~) T_g <= T < T*, and (iii) T < T_g. At T* in SmB6, we observe a peak in the temperature-dependent AC pickup signal which corresponds to the peak in the broad hump feature in the bulk DC susceptibility measurements and features in the resistivity measurements. A dip in the pickup signal at T_g in SmB6 correlates with the evidence for the opening of a bulk Kondo gap in transport measurements. Our study of the pickup signal in SmB6 suggests the presence of a thin (submicron order thickness) high conducting surface layer from a temperature just below T_g. In this T regime in SmB6, the pickup signal shows a distinct square root frequency (f) dependence compared to the linear f dependence found in Bi2Se3. Across all the different T regimes, distinct AC frequency dependence and scaling properties are observed. Our results suggest that above T*, weak exchange interactions cause electrons to scatter from random ion sites. Electronic correlations gradually strengthen with the onset of Kondo like hybridization, setting in from below T*, and at T_g, a strongly correlated Kondo gap opens up in the bulk of the material. The appearance of the thin high conducting surface layer is nearly coincident with the onset of bulk Kondo insulating state below T_g in SmB6.

cond-mat.str-el

Crystal Structure and Phonon Density of States of FeSi up to 120 GPa

The strongly correlated material FeSi exhibits several unusual thermal, magnetic, and structural properties under varying pressure-temperature (P-T) conditions. It is a potential thermoelectric alloy and a materials of several geological implications as a possible constituent at the Earth's core mantle boundary (CMB). The phase transition behavior and lattice dynamics of FeSi under different P-T conditions remain elusive. A previous theoretical work predicted a pressure induced B20-B2 transition at ambient temperature, yet the transition is only observed at high P-T conditions in the experiments. Furthermore, the closing of the electronic gap due to a dramatic renormalization of the electronic structure and phonon anomalies has been reported based on density function calculations. In this study we have performed high pressure powder diffraction and Nuclear Resonant Inelastic X-ray Scattering (NRIXS) measurements up to 120 GPa to understand the phase stability and the lattice dynamics. Our study shows evidence for a nonhydrostatic stress induced B20-B2 transition in FeSi around 36 GPa for the first time. The Fe partial phonon density of states (PDOS) and thermal parameters were derived from NRIXS up to 120 GPa with the density function theoretical (DFT) calculations. These calculations further predict and are consistent with pressure-induced metallization and band gap closing around 12 GPa.

cond-mat.mtrl-sci

Enhancement of the Residual Linear Term in the Thermal Conductivity of Kondo Insulator SmB6 under Uniaxial Tensile Strain

Recent experiments on Kondo insulator SmB6 have revealed bulk excitations that could be Fermions without charge. This would lead to a residual linear term in the thermal conductivity that was not observed universally in experiments. To solve this mystery, we introduce a novel symmetric geometry for performing thermal transport measurements under strains. Magnetic-field-independent residual linear terms were found in flux-grown SmB6 at nominal zero strain, and they grew under a tensile strain, which is known to modify Sm valence. A small growth-dependent difference in the Sm valence might explain the observed discrepancies. We discuss the constraints on the theories of bulk excitations in SmB6.

cond-mat.str-el

Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves

Recently, evidence for a conducting surface state below 19 K was reported for the correlated d-electron small gap semiconductor FeSi. In the work reported herein, the conducting surface state and the bulk phase of FeSi were probed via electrical resistivity measurements as a function of temperature T, magnetic field B to 60 T and pressure P to 7.6 GPa, and by means of a magnetic field modulated microwave spectroscopy (MFMMS) technique. The properties of FeSi were also compared to those of the Kondo insulator SmB6 to address the question of whether FeSi is a d-electron analogue of an f-electron Kondo insulator and, in addition, a topological Kondo insulator. The overall behavior of the magnetoresistance MR of FeSi at temperatures above and below the onset temperature (T_S) 19 K of the conducting surface state is similar to that of SmB6. The two energy gaps, inferred from the resistivity data in the semiconducting regime, increase with pressure up to about 7 GPa, followed by a drop which coincides with a sharp suppression of T_S. This behavior is similar to that reported for SmB6, except that the two energy gaps in SmB6 decrease with pressure before dropping abruptly at T_S. The MFMMS measurements showed a sharp feature at T_S (19 K) for FeSi, but no such feature was observed at T_S 4.5 K for SmB6. The absence of a feature at T_S for SmB6 may be due to experimental issues and will be the subject of a future investigation.

cond-mat.str-el

Evidence for multiband superconductivity and charge density waves in Ni-doped ZrTe$_2$

We carried out a comprehensive study of the electronic, magnetic, and thermodynamic properties of Ni-doped ZrTe$_2$. High quality Ni$_{0.04}$ZrTe$_{1.89}$ single crystals show a possible coexistence of charge density waves (CDW, T$_{CDW}\approx287$\,K) with superconductivity (T$_c\approx 4.1$\,K), which we report here for the first time. The temperature dependence of the lower (H$_{c_1}$) and upper (H$_{c_2}$) critical magnetic fields both deviate significantly from the behaviors expected in conventional single-gap s-wave superconductors. However, the behaviors of the normalized superfluid density $ρ_s(T)$ and H$_{c_2}(T)$ can be described well using a two-gap model for the Fermi surface, in a manner consistent with conventional multiband superconductivity. Electrical resistivity and specific heat measurements show clear anomalies centered near 287\,K consistent with a CDW phase transition. Additionally, electronic-structure calculations support the coexistence of electron-phonon multiband superconductivity and CDW order due to the compensated disconnected nature of the electron- and hole-pockets at the Fermi surface. Our electronic structure calculations also suggest that ZrTe$_2$ could reach a non-trivial topological type-II Dirac semimetallic state. These findings highlight that Ni-doped ZrTe2 can be uniquely important for probing the coexistence of superconducting and CDW ground states in an electronic system with non-trivial topology.

cond-mat.supr-con

Bulk transport paths through defects in floating zone and Al flux grown SmB$_6$

We investigate the roles of disorder on low-temperature transport in SmB$_6$ crystals grown by both the Al flux and floating zone methods. We used the inverted resistance method with Corbino geometry to investigate whether low-temperature variations in the standard resistance plateau arises from a surface or a bulk channel in floating zone samples. The results show significant sample-dependent residual bulk conduction, in contrast to smaller amounts of residual bulk conduction previously observed in Al flux grown samples with Sm vacancies. We consider hopping in an activated impurity band as a possible source for the observed bulk conduction, but it is unlikely that the large residual bulk conduction seen in floating zone samples is solely due to Sm vacancies. We therefore propose that one-dimensional defects, or dislocations, contribute as well. Using chemical etching, we find evidence for dislocations in both flux and floating zone samples, with higher dislocation density in floating zone samples than in Al flux grown samples. In addition to the possibility of transport through one-dimensional dislocations, we also discuss our results in the context of recent theoretical models of SmB$_6$.

cond-mat.str-el

Bulk and surface properties of SmB6

Samarium hexaboride crystallizes in a simple cubic structure (space group #221, Pm-3m), but its properties are far from being straightforward. Initially classified as a Kondo insulator born out of its intriguing intermediate valence ground state, SmB6 has been recently predicted to be a strongly correlated topological insulator. The subsequent experimental discovery of surface states has revived the interest in SmB6, and our purpose here is to review the extensive and in many aspects perplexing experimental record of this material. We will discuss both surface and bulk properties of SmB6 with an emphasis on the role of crystal growth and sample preparation. We will also highlight the remaining mysteries and open questions in the field.

cond-mat.str-el

Definitive Surface Magnetotransport Study of SmB$_{6}$

After the theoretical prediction that SmB$_6$ is a topological Kondo insulator, there has been an explosion of studies on the SmB$_6$ surface. However, there is not yet an agreement on even the most basic quantities such as the surface carrier density and mobility. In this paper, we carefully revisit Corbino disk magnetotransport studies to find those surface transport parameters. We first show that subsurface cracks exist in the SmB$_6$ crystals, arising both from surface preparation and during the crystal growth. We provide evidence that these hidden subsurface cracks are additional conduction channels, and the large disagreement between earlier surface SmB$_6$ studies may originate from previous interpretations not taking this extra conduction path into account. We provide an update of a more reliable magnetotransport data than the previous one (Phys. Rev. B 92, 115110) and find that the orders-of-magnitude large disagreements in carrier density and mobility come from the surface preparation and the transport geometry rather than the intrinsic sample quality. From this magnetotransport study, we find an updated estimate of the carrier density and mobility of 2.71$\times$10$^{13}$ (1/cm$^2$) and 104.5 (cm$^{2}$/V$\cdot$sec), respectively. We compare our results with other studies of the SmB$_6$ surface. By this comparison, we provide insight into the disagreements and agreements of the previously reported angle-resolved photoemission spectroscopy, scanning tunneling microscopy, and magnetotorque quantum oscillations measurements.

cond-mat.mes-hall

Hall coefficient diagnostics of surface state in pressurized SmB6

In this study, we report the first results of the high-pressure Hall coefficient (RH) measurements in the putative topological Kondo insulator SmB6 up to 37 GPa. Below 10 GPa, our data reveal that RH(T) exhibits a prominent peak upon cooling below 20 K. Remarkably, the temperature at which surface conduction dominates coincides with the temperature of the peak in RH(T). The temperature dependent resistance and Hall coefficient can be well fitted by a two-channel model with contributions from the metallic surface and the thermally activated bulk states. When the bulk of SmB6 becomes metallic and magnetic at ~ 10 GPa, both the RH(T) peak and the resistance plateau disappear simultaneously. Our results indicate that the RH(T) peak is a fingerprint to diagnose the presence of a metallic surface state in SmB6. The high-pressure magnetic state of SmB6 is robust to 180 GPa, and no evidence of superconductivity is observed in the metallic phase.

cond-mat.str-el

A RIXS investigation of the crystal-field splitting of Sm$^{3+}$ in SmB$_6$

The crystal-field (CF) splitting of the $^6H_{5/2}$ Hund's rule ground state of Sm$^{3+}$ in the strongly correlated topological insulator SmB$_6$ has been determined with high resolution resonant inelastic x-ray scattering (RIXS) at the Sm M$_5$ edge. The valence selectivity of RIXS allows isolating the crystal-field-split excited multiplets of the Sm$^{3+}$ (4$f^5$) configuration from those of Sm$^{2+}$ (4$f^6$) in intermediate valent SmB$_6$. The very large energy range of RIXS allows the crystal-field analysis of a high lying multiplet at about 2.4\,eV that has the same total angular momentum $J$ as the ground state so that ambiguities due to the elastic tail can be avoided. We find that the $Γ_7$ doublet and $Γ_8$ quartet of the $^6H_{5/2}$ Hund's rule ground state are split by $Δ^{CF}_{^6H_{5/2}}$\,=\,20$\pm$10\,meV which sets an upper limit for the 4$f$ band width. This indicates an extremely large mass renormalization from the band structure value, pointing out the need to consider the coefficients of fractional parentage for the hopping of the 4$f$ electrons.

cond-mat.str-el

Raman spectroscopy of $f$-electron metals: an example of CeB$_{6}$

We performed an optical spectroscopy study of electronic and magnetic excitations for a rare-earth system with a single electron quasi-localized in the f-shell on an ion at high-symmetry crystallographic site in application to CeB$_{6}$ heavy-fermion metal. We carried out group-theoretical classification of the electronic crystal field (CF) transitions and assessed their coupling to light cross-sections for polarization resolved Raman scattering processes. We discuss applicability of symmetrized Raman susceptibility to studies of exotic charge and spin high multiplet ordering phases in f-electron systems. We study temperature effects on intra- and inter-multiplet CF transitions and also on the coupling between the CF excitations with the lattice vibrations. We acquired temperature dependence of the low-frequency polarization resolved Raman response and obtained the static Raman susceptibility for all Raman-allowed symmetry channels: A$_{1g}$, E$_{g}$, T$_{1g}$, and T$_{2g}$ of the cubic O$_{h}$ point group. We demonstrate that for CeB$_{6}$ system only T$_{1g}$-symmetry static Raman susceptibility shows an anomalous temperature dependence which is consistent with the magnetic susceptibility data measured by other techniques. This anomalous behavior in the T$_{1g}$-channel signifies the presence of long wavelength magnetic fluctuations, while the lack of susceptibility enhancement for all the remaining symmetry channels indicates that long wavelength charge quadrupole fluctuations at low-temperature are weak.

cond-mat.str-el

Exploring itinerant states in divalent hexaborides using rare-earth $L$ edge resonant inelastic X-ray scattering

We present a study of resonant inelastic X-ray scattering (RIXS) spectra collected at the rare-earth $L$ edges of divalent hexaborides YbB$_6$ and EuB$_6$. In both systems, RIXS-active features are observed at two distinct resonances separated by $\sim10$ eV in incident energy, with angle-dependence suggestive of distinct photon scattering processes. RIXS spectra collected at the divalent absorption peak strongly resemble the unoccupied 5$d$ density of states calculated using density functional theory, an occurrence we ascribe to transitions between weakly-dispersing 4$f$ and strongly dispersing 5$d$ states. In addition, anomalous resonant scattering is observed at higher incident energy, where no corresponding absorption feature is present. Our results suggest the far-reaching utility of $L$-edge RIXS in determining the itinerant-state properties of $f$-electron materials.

cond-mat.str-el

Magneto-optical imaging of stepwise magnetic domain disintegration at characteristic temperatures in EuB_6

Prior to the onset of the ferromagnetic transition in semimetallic EuB_6, unusual magnetic and electric behavior have been reported. Using a highly sensitive magneto-optical imaging (MOI) technique, we visualize the behavior of magnetic domains in a EuB_6 single crystal.The transformation from a paramagnetic to a ferromagnetic state is shown to be non-Curie Weiss like and proceeds via multiple breaks in the curvature of the temperature-dependent local magnetization. From our experiments, we identify three characteristic boundaries, T^*(H),T^*_c1(H) and T_c2(H),in a field - temperature magnetic phase diagram.Using scaling and Modified Arrott plot analysis of isothermal bulk magnetization data, we determine the critical exponents $β$ = 0.22 $\pm$ 0.01, $γ$ = 0.88 $\pm$ 0.05 and $δ$= 5.0 $\pm$ 0.1 and a critical transition temperature = 12.0 $\pm$ 0.2 K which is found to be equal to T_c2. The critical exponents are close to those associated with the universality class of tricritical mean field model. The absence of a model with which the exponents correspond with directly, suggests the presence of large critical fluctuations in this system. The critical fluctuations in this system are sensitive to the applied magnetic field, which leads to field dependence of boundaries in the magnetic phase diagram. With increasing T the magnetic domains disintegrate into finger-like patterns before fragmenting into disjoint magnetized puddles at T^*_c1 and ultimately disappearing at T*. At T^*_c1 we observe a significant increase in the spatial inhomogeneity of the local magnetic field distribution associated with the magnetic domain structure disintegrating into smaller magnetized structures. We explain our results via the formation of magnetic polaronic clusters and their coalescing into larger domains.

cond-mat.str-el

Magnetic and defect probes of the SmB$_6$ surface state

The impact of non-magnetic and magnetic impurities on topological insulators is a central problem concerning their fundamental physics and possible novel spintronics and quantum computing applications. SmB$_6$, predicted to be a topological Kondo insulator, is considered a benchmark material. Using a spin-polarized tip in scanning tunneling spectroscopy destroys the signature peak of the topological surface state, revealing its spin texture. Further, combining local STS with macroscopic transport measurements on SmB$_6$ containing different substitutions enables us to investigate the effect of impurities. The surface states around impurities are locally suppressed with different length scales depending on their magnetic properties and, for sufficiently high impurity level, globally destroyed. Our study points directly to the topological nature of SmB$_6$, and unveils, microscopically and macroscopically, how impurities -- magnetic or non-magnetic -- affect topological surface states.

cond-mat.str-el

Robustness of the Insulating Bulk in the Topological Kondo Insulator SmB$_{6}$

We used the inverted resistance method to extend the bulk resistivity of SmB$_{6}$ to a regime where the surface conduction overwhelms the bulk. Remarkably, the bulk resistivity shows an intrinsic thermally activated behavior that changes ten orders of magnitude, suggesting that it is an ideal insulator that is immune to disorder. Non-stoichiometrically-grown SmB$_{6}$ samples also show an almost identical thermally activated behavior. At low temperatures, however, these samples show a mysterious high bulk resistivity plateau, which may arise from extended defect conduction in a 3D TI.

cond-mat.str-el