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Zdeněk Sofer

Publications and source records attributed to Zdeněk Sofer.

38 records · Page 3Linked to original sources

Niobium disulphide (NbS$_2$)-based (heterogeneous) electrocatalysts for an efficient hydrogen evolution reaction

The design of efficient and cost-effective catalysts for the hydrogen evolution reaction (HER) is the key for molecular hydrogen (H2) production from electrochemical water splitting. Transition metal dichalcogenides (MX2), most notably group-6 MX2 (e.g., MoS2 and WS2), are appealing catalysts for the HER alternative to the best, but highly expensive, Pt-group elements. However, their HER activity is typically restricted to their edge sites rather than their basal plane. Furthermore, their semiconducting properties hinder an efficient electron transfer to the catalytic sites, which impedes a high rate of H2 production. Herein, we exploit liquid-phase exfoliation-produced metallic (1H, 2H and 3R) NbS2 nanoflakes, belonging to the class of metallic layered group-5 MX2, to overcome the abovementioned limitations. Both chemical treatment with hygroscopic Li salt and electrochemical in operando self-nanostructuring are exploited to improve the NbS2 nanoflake HER activity. The combination of NbS2 with other MX2, in our case MoSe2, also provides heterogeneous catalysts accelerating the HER kinetics of the individual counterparts. The designed NbS2-based catalysts exhibit an overpotential at a cathodic current of 10 mA cm-2 (n10) as low as 0.10 and 0.22 V vs. RHE in 0.5 M H2SO4 and 1 M KOH, respectively. In 0.5 M H2SO4, the HER activity of the NbS2-based catalysts is also superior to those of the Pt/C benchmark at current densities higher than 80 mA cm-2. Our work provides general guidelines for a scalable and cost-effective exploitation of NbS2, as well as the entire MX2 portfolio, for attaining a viable H2 production through electrochemical routes.

physics.chem-ph↗

Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals

Layered indium selenide (InSe) is a van der Waals solid that has emerged as a promising material for high-performance ultrathin solar cells. The optoelectronic parameters that are critical to photoconversion efficiencies, such as hot carrier lifetime and surface recombination velocity, are however largely unexplored in InSe. Here, these key photophysical properties of layered InSe are measured with femtosecond transient reflection spectroscopy. The hot carrier cooling process is found to occur through phonon scattering. The surface recombination velocity and ambipolar diffusion coefficient are extracted from fits to the pump energy-dependent transient reflection kinetics using a free carrier diffusion model. The extracted surface recombination velocity is approximately an order of magnitude larger than that for methylammonium lead-iodide perovskites, suggesting that surface recombination is a principal source of photocarrier loss in InSe. The extracted ambipolar diffusion coefficient is consistent with previously reported values of InSe carrier mobility.

cond-mat.mtrl-sci↗