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Ze Yan

Publications and source records attributed to Ze Yan.

6 recordsLinked to original sources

Ising superconductivity and anomalous metallic states in a bulk crystal with artificial unidirectional stacking layers

The two-dimensional (2D) limit in macroscopic bulk crystals provides a powerful platform for exploring exotic quantum phases. Here, we report the synthesis of a Sr0.75ClNbS2 superconductor that achieves unidirectional, parallel AA stacking-a configuration never before realized in a bulk crystal. Unlike conventional intercalation, which merely expands the interlayer spacing, our approach employs a planar Sr-Cl network to enforce a complete stacking reorganization, driving all NbS2 layers from the native antiparallel AB stacking into a unidirectional, parallel AA arrangement. This stacking switch globally breaks inversion symmetry, transforming centrosymmetric 2H-NbS2 into a noncentrosymmetric bulk crystal with D3h point group symmetry. Crucially, this structural design reproduces, in three dimensions, the electronic environment of an isolated monolayer, thereby preventing cancellation of the local Ising fields. As a result, strong Ising spin-orbit coupling and spin-split bands persist throughout the bulk. Transport measurements reveal extreme superconducting anisotropy ({\gamma} ~ 77), an in-plane upper critical field (~ 10.65 T) that far exceeds the Pauli paramagnetic limit, and clean-limit superconductivity indicative of high crystalline quality. Moreover, magnetotransport uncovers a novel magnetic-field-induced anomalous metallic state characterized by finite dissipation yet a vanishing Hall response. Direct band-structure measurements corroborate the layer-decoupled, quasi-2D electronic nature of the system. This work establishes stacking-geometry engineering as a powerful strategy to artificially enforce a globally noncentrosymmetric, quasi-2D superconducting state in bulk crystals, paving the way for designing quantum materials with tunable crystalline symmetry and electronic band topology.

cond-mat.supr-con

Orbital-selective band evolution and out-of-plane correlation in the FeGe-family kagome antiferromagnet ScFe$_6$Ge$_6$

In strongly correlated materials such as high-temperature superconductors, the relation between charge density wave (CDW) order and magnetism remains an important unresolved problem. FeGe is the first kagome metal known to exhibit CDW order deep within an antiferromagnetic state, accompanied by an unconventional evolution of lattice symmetry. To elucidate the general conditions governing such spin-correlated CDW order, we investigate ScFe$_6$Ge$_6$, which lacks CDW order and therefore exhibits reduced involvement of charge degrees of freedom while retaining other properties of FeGe. Instead of a CDW order, ScFe$_6$Ge$_6$ undergoes a magnetic transition at $T^*$ = 195 K. Across this transition, angle-resolved photoemission and Raman spectroscopy reveal orbital-selective behavior confined to a single kagome Dirac band, together with electron-phonon and magnetoelastic coupling to an out-of-plane phonon mode. These results suggest that orbital-selective physics and out-of-plane correlations play enhanced roles in realizing spin-correlated CDW order in magnetic kagome metals.

cond-mat.str-el

Rare-Earth-Tuned Evolution from d- to f-Orbital Dominance and Giant Anomalous Hall Effect in Topological RGaGe (R = Ce, Pr, Nd) Semimetals

The family of noncentrosymmetric rare-earth germanides RGaGe (R = Ce, Pr, Nd) provides a rich materials platform to explore the intertwined physics of strong magnetism, electronic correlations, and topological band structures. Through a combination of crystal growth, characterization, and first-principles calculations, we reveal that these compounds exhibit a pronounced uniaxial magnetic anisotropy, leading to distinct ground states: RGaGe orders ferromagnetically with moments along the crystallographic c-axis, and shows an antiferromagnetic-like structure in the ab-plane. A key finding is a significantly enhanced intrinsic anomalous Hall conductivity (AHC) compared to their well-known RAlGe counterparts, which even reaches as high as 948 {\Omega}-1 cm-1 at 2 K in PrGaGe. Our theoretical analysis predicts that this AHC originates from a robust Weyl semimetallic state driven by inversion symmetry breaking, where Weyl points near the Fermi level couple strongly to the magnetic order. Importantly, this topological state persists above the magnetic ordering temperature, confirming its intrinsic electronic origin. Our calculation also reveals that, while the near-Fermi-level states in CeGaGe and PrGaGe are dominated by d-orbital contributions, NdGaGe exhibits significant f-orbital involvement, signaling a progressive evolution from d- to f-orbital dominated topology. These results establish the RGaGe system as a tunable platform for systematically extending the RAlGe-related family, showcasing a large anomalous Hall response and orbital evolution near the Fermi level, and advancing the understanding of the interplay between topology and magnetism in quantum materials.

cond-mat.mtrl-sci

Breaking the Trade-off: Bulk 2D Ising Superconductivity with High Tc and Giant Interlayer Spacing via a Unique Chain Intercalation in (BaS)1/3TaS2

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are promising platforms for low dimensional superconductivity. However, in conventional intercalated systems, achieving a high superconducting transition temperature (Tc) often comes at the expense of reduced interlayer spacing and weakened 2D character. Here, we overcome this long-standing compromise through a unique chain-like intercalation strategy. We report the synthesis and properties of a new polymorph, (BaS)1/3TaS2, in which a distinctive Ba-S-S-Ba chain structure is inserted between TaS2 bilayers. This unique configuration breaks the bulk c axis mirror symmetry while achieving exceptional interlayer decoupling, with an inter-bilayer spacing of 12.75 {\AA}-more than three times that of pristine 2H-TaS2. By suppressing interlayer electronic coupling, this structural evolution allows local inversion symmetry breaking within individual TaS2 layers to dominate. This prevents compensation of the Ising spin-orbit fields typical of centrosymmetric bulk phases, enabling robust 2D Ising superconductivity. Remarkably, the compound exhibits an enhanced Tc without sacrificing its large interlayer spacing, thereby breaking the conventional trade-off between large spacing/high anisotropy and high Tc. Comprehensive transport, magnetic, and thermodynamic measurements confirm its robust superconducting state. Our work establishes a versatile intercalation framework for designing bulk-like 2D Ising superconductors, providing a new route to reconcile competing material demands and expanding the scope of Ising superconductivity research.

cond-mat.supr-con

Two-Dimensional Scanning Phased Array Based on Pattern Reconfigurable Antenna

This paper presents a novel planar phased array that can work in Ka band designed for two-dimensional scanning. A four-modes pattern reconfigurable element based on microstrip Yagi antenna is proposed, and then developed into the 4X4 phased array, in which two feed points are introduced to reduce sidelobe level (SLL). The simulated results show that our proposed phased array is able to cover the scanning range from -60{\deg} to +60{\deg}in H-plane(yoz-plane) and -47.2{\deg}to +47.2{\deg}in E-plane(xoz-plane) with the gain reduction less than 3dB, both the SLLs of which are 10dB less than main beam. The two-dimensional scanning phased array based on pattern reconfigurable antenna (PRA) presented here is suitable for the satellite communication.

physics.ins-det

Graphene based functional devices: A short review

Graphene is an ideal 2D material system bridging electronic and photonic devices. It also breaks the fundamental speed and size limits by electronics and photonics, respectively. Graphene offers multiple functions of signal transmission, emission, modulation, and detection in a broad band, high speed, compact size, and low loss. Here, we have a brief view of graphene based functional devices at microwave, terahertz, and optical frequencies. Their fundamental physics and computational models were discussed as well.

physics.app-ph