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Zedong Xu

Publications and source records attributed to Zedong Xu.

4 recordsLinked to original sources

Large Enhancement of Properties in Strained Lead-free Multiferroic Solid Solutions with Strong Deviation from Vegard's Law

Efforts to combine the advantages of multiple systems to enhance functionlities through solid solution design present a great challenge due to the constraint imposed by the classical Vegard law. Here, we successfully navigate this trade off by leveraging the synergistic effect of chemical doping and strain engineering in solid solution system of BiFeO3 BaTiO3. Unlike bulks, a significant deviation from the Vegard law accompanying with enhanced multiferroism is observed in the strained solid solution epitaxial films, where we achieve a pronounced tetragonality, enhanced saturated magnetization, substantial polarization, high ferroelectric Curie temperature, all while maintaining impressively low leakage current. These characteristics surpass the properties of their parent BiFeO3 and BaTiO3 films. Moreover, the superior ferroelectricity has never been reported in corresponding bulks. These findings underscore the potential of strained BiFeO3 BaTiO3 films as lead-free, room-temperature multiferroics.

cond-mat.mtrl-sci

Inverse orbital Hall effect and orbitronic terahertz emission observed in the materials with weak spin-orbit coupling

The Orbital Hall effect, which originates from materials with weak spin-orbit coupling, has attracted considerable interest for spin-orbitronic applications. Here, we demonstrate the inverse effect of the orbital Hall effect and observe orbitronic terahertz emission in the Ti and Mn materials. Through spin-orbit transition in the ferromagnetic layer, the generated orbital current can be converted to charge current in the Ti and Mn layers via the inverse orbital Hall effect. Furthermore, the inserted W layer provides an additional conversion of the orbital-charge current in the Ti and Mn layers, significantly enhancing the orbitronic terahertz emission. Moreover, the orbitronic terahertz emission can be manipulated by cooperating with the inverse orbital Hall effect and the inverse spin Hall effect in the different sample configurations. Our results not only discover the physical mechanism of condensed matter physics but also pave the way for designing promising spin-orbitronic devices and terahertz emitters.

cond-mat.mes-hall

Perpendicularly magnetized YIG films with small Gilbert damping constant and anomalous spin transport properties

The Y3Fe5O12 (YIG) films with perpendicular magnetic anisotropy (PMA) have recently attracted a great deal of attention for spintronics applications. Here, we report the induced PMA in the ultrathin YIG films grown on (Gd2.6Ca0.4)(Ga4.1Mg0.25Zr0.65)O12 (SGGG) substrates by epitaxial strain without preprocessing. Reciprocal space mapping shows that the films are lattice-matched to the substrates without strain relaxation. Through ferromagnetic resonance and polarized neutron reflectometry measurements, we find that these YIG films have ultra-low Gilbert damping constant with a magnetic dead layer as thin as about 0.3 nm at the YIG/SGGG interfaces. Moreover, the transport behavior of the Pt/YIG/SGGG films reveals an enhancement of spin mixing conductance and a large non-monotonic magnetic field dependence of anomalous Hall effect as compared with the Pt/YIG/Gd3Ga5O12 (GGG) films. The non-monotonic anomalous Hall signal is extracted in the temperature range from 150 to 350 K, which has been ascribed to the possible non-collinear magnetic order at the Pt/YIG interface induced by uniaxial strain.

cond-mat.mtrl-sci

Solution Processed Large-scale Multiferroic Complex Oxide Epitaxy with Magnetically Switched Polarization

Complex oxides with tunable structures have many fascinating properties, though high-quality complex oxide epitaxy with precisely controlled composition is still out of reach. Here we have successfully developed solution-based single crystalline epitaxy for multiferroic (1-x)BiTi(1-y)/2FeyMg(1-y)/2O3-(x)CaTiO3 (BTFM-CTO) solid solution in large area, confirming its ferroelectricity at atomic-scale with a spontaneous polarization of 79~89uC/cm2. Careful compositional tuning leads to a bulk magnetization of ~0.07uB/Fe at room temperature, enabling magnetically induced polarization switching exhibiting a large magnetoelectric coefficient of 2.7-3.0X10-7s/m. This work demonstrates the great potential of solution processing in large-scale complex oxide epitaxy and establishes novel room-temperature magnetoelectric coupling in epitaxial BTFM-CTO film, making it possible to explore a much wider space of composition, phase, and structure that can be easily scaled up for industrial applications.

cond-mat.mtrl-sci