arXiv subjects

Zengguang Cheng

Publications and source records attributed to Zengguang Cheng.

5 recordsLinked to original sources

arXiv2022

Monadic Pavlovian associative learning in a backpropagation-free photonic network

Over a century ago, Ivan P. Pavlov, in a classic experiment, demonstrated how dogs can learn to associate a ringing bell with food, thereby causing a ring to result in salivation. Today, it is rare to find the use of Pavlovian type associative learning for artificial intelligence (AI) applications even though other learning concepts, in particular backpropagation on artificial neural networks (ANNs) have flourished. However, training using the backpropagation method on 'conventional' ANNs, especially in the form of modern deep neural networks (DNNs), is computationally and energy intensive. Here we experimentally demonstrate a form of backpropagation-free learning using a single (or monadic) associative hardware element. We realize this on an integrated photonic platform using phase-change materials combined with on-chip cascaded directional couplers. We then develop a scaled-up circuit network using our monadic Pavlovian photonic hardware that delivers a distinct machine-learning framework based on single-element associations and, importantly, using backpropagation-free architectures to address general learning tasks. Our approach reduces the computational burden imposed by learning in conventional neural network approaches, thereby increasing speed, whilst also offering higher bandwidth inherent to our photonic implementation.

physics.optics↗

arXiv2020

Antimony thin films demonstrate programmable optical non-linearity

The use of metals of nanometer dimensions to enhance and manipulate light-matter interactions for a range of emerging plasmonics-enabled nanophotonic and optoelectronic applications is an interesting, yet not highly explored area of research outside of plasmonics1,2. Even more importantly, the concept of an active metal, i.e. a metal that can undergo an optical non-volatile transition has not been explored. Nanostructure-based applications would have unprecedented impact on both the existing and future of optics with the development of active and nonlinear optical tunabilities in single elemental metals3-5. Compared to alloys, pure metals have the material simplicity and uniformity; however single elemental metals have not been viewed as tunable optical materials, although they have been explored as viable electrically switchable materials. In this paper we demonstrate for the first time that antimony (Sb), a pure metal, is optically distinguishable between two programmable states as nanoscale thin films. We then show that these states are stable at room temperature, and the states correspond to the crystalline and amorphous phases of the metal. Crucially from an application standpoint, we demonstrate both its optoelectronic modulation capabilities as well as speed of switching using single sub-picosecond (ps) pulses. The simplicity of depositing a single metal portends its potential for use in applications ranging from high speed active metamaterials to photonic neuromorphic computing, and opens up the possibility for its use in any optoelectronic application where metallic conductors with an actively tunable state is important.

cond-mat.mtrl-sci↗

arXiv2018

Plasmonic nanogap enhanced phase change devices with dual electrical-optical functionality

Modern-day computers use electrical signaling for processing and storing data which is bandwidth limited and power-hungry. These limitations are bypassed in the field of communications, where optical signaling is the norm. To exploit optical signaling in computing, however, new on-chip devices that work seamlessly in both electrical and optical domains are needed. Phase change devices can in principle provide such functionality, but doing so in a single device has proved elusive due to conflicting requirements of size-limited electrical switching and diffraction-limited photonic devices. Here, we combine plasmonics, photonics and electronics to deliver a novel integrated phase-change memory and computing cell that can be electrically or optically switched between binary or multilevel states, and read-out in either mode, thus merging computing and communications technologies.

physics.optics↗

arXiv2018

In-memory computing on a photonic platform

Collocated data processing and storage are the norm in biological systems. Indeed, the von Neumann computing architecture, that physically and temporally separates processing and memory, was born more of pragmatism based on available technology. As our ability to create better hardware improves, new computational paradigms are being explored. Integrated photonic circuits are regarded as an attractive solution for on-chip computing using only light, leveraging the increased speed and bandwidth potential of working in the optical domain, and importantly, removing the need for time and energy sapping electro-optical conversions. Here we show that we can combine the emerging area of integrated optics with collocated data storage and processing to enable all-photonic in-memory computations. By employing non-volatile photonic elements based on the phase-change material, Ge2Sb2Te5, we are able to achieve direct scalar multiplication on single devices. Featuring a novel single-shot Write/Erase and a drift-free process, such elements can multiply two scalar numbers by mapping their values to the energy of an input pulse and to the transmittance of the device, codified in the crystallographic state of the element. The output pulse, carrying the information of the light-matter interaction, is the result of the computation. Our all-optical approach is novel, easy to fabricate and operate, and sets the stage for development of entirely photonic computers.

cs.ET↗

arXiv2014

Graphene, a material for high temperature devices; intrinsic carrier density, carrier drift velocity, and lattice energy

Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising temperature. Once reaching a temperature, the density surpasses the chemical doping or gating effect, any p-n junction or transistor made from the semiconductor will fail to function. Here, we measure the intrinsic Fermi level (|E_F|=2.93k_B*T) or intrinsic carrier density (n_in=3.87*10^6 cm^-2 K^-2*T^2), carrier drift velocity, and G mode phonon energy of graphene devices and their temperature dependencies up to 2400 K. Our results show intrinsic carrier density of graphene is an order of magnitude less sensitive to temperature than those of Si or Ge, and reveal the great potentials of graphene as a material for high temperature devices. We also observe a linear decline of saturation drift velocity with increasing temperature, and identify the temperature coefficients of the intrinsic G mode phonon energy. Above knowledge is vital in understanding the physical phenomena of graphene under high power or high temperature.

cond-mat.mtrl-sci↗