SearcharxivSearch

arXiv subjects

Zengxia Mei

Publications and source records attributed to Zengxia Mei.

8 recordsLinked to original sources

Giant intrinsic dichroism in \b{eta}-Ga2O3 enables filter-free, high-fidelity polarization division multiplexing

Conventional polarization detection relies on external filters, which incur significant efficiency loss and polarization crosstalk, especially in the deep ultraviolet band where subwavelength nanofabrication is challenging. Here, we report that monoclinic \b{eta}-Ga2O3 exhibits intrinsic giant polarization dichroism, allowing near-ideal polarization photodetection without external optical elements and coherent polarization-division multiplexing (PDM) capability. The giant dichroism originates from the crystallographic symmetry-driven selectivity of optical transitions, which, combined with a large valence band splitting, results in vastly distinct absorption for orthogonal polarizations. A theoretical analysis of the transition selection rules in \b{eta}-Ga2O3 reveals only the E//c-polarized vb1-to-conduction band transition is activated, within the 245-258 nm spectral window. An admirable polarization ratio surpassing 500 and a polarization crosstalk ratio below 0.2% is hence achieved. The polarization-sensitive photodetector exhibits a high responsivity of 73 A/W and fast response (20 ms). Furthermore, we showcase its practical utility in PDM free-space communication, successfully decoding encoded optical signals, and demonstrate its capability for high-fidelity Stokes vector retrieval. The intrinsic anisotropy of \b{eta}-Ga2O3, dictated by its crystal symmetry, lays the groundwork for filter-free, high-fidelity polarization polarimetry. This work further paves the way for a general design principle in next-generation optoelectronics that harness polarization transition selection rules.

physics.app-ph

Optical library of Ga2O3 polymorphs

Gallium oxide is an emerging material of interest due to its unique combination of functional properties and the existence of multiple polymorphs - {\alpha}, {\beta}, {\gamma}, {\delta}, and {\kappa} - each exhibiting distinct characteristics arising from their different lattice symmetries. Optical properties are particularly important, as they determine potential device applications and enable phase identification. However, direct comparison of optical signatures, including key parameters such as bandgaps, is hindered by inconsistent, sparse, or even missing data in the literature. To address this issue, in the present work we systematically cross-correlate optical emission and absorption features of {\alpha}, {\beta}, {\gamma}, {\delta}, and {\kappa} thin films, as well as differently oriented {\beta}-phase bulk crystals and {\gamma}/{\beta} double polymorph structures. We demonstrate that optical bandgaps and emission features scale consistently across the polymorphs when methodological uncertainties are minimized by applying identical experimental conditions and unified analysis procedures to a structurally similar set of thin film samples. In addition, we extend conventional far field optical phase identification to the nanoscale by reporting near field optical signatures of Ga2O3 polymorphs via nano FTIR. Overall, the present dataset provides a comprehensive reference of near- and far-field optical polymorph signatures to support ongoing multidisciplinary research on Ga2O3.

cond-mat.mtrl-sci

Epitaxial Growth of $β$-Ga$_2$O$_3$ Coated Wide Bandgap Semiconductor Tape for Flexible UV Photodetector

The epitaxial growth of technically-important $β$-Ga$_2$O$_3$ semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crystallization conditions and the lattice-matching requirements. In this report, for the first time single crystal $β$-Ga$_2$O$_3$(-201) thin films is epitaxially grown on the flexible CeO2 (001)-buffered hastelloy tape. The results indicate that CeO$_2$ (001) has a small bi-axial lattice mismatch with $β$-Ga$_2$O$_3$ (-201), thus inducing a simultaneous double-domain epitaxial growth. Flexible photodetectors are fabricated based on the epitaxial $β$-Ga$_2$O$_3$ coated tapes. Measurements show that the obtained photodetectors have a responsivity of 40 mA/W, with an on/off ratio reaching 1000 under 250 nm incident light and 5 V bias voltage. Such photoelectrical performance is already within the mainstream level of the $β$-Ga$_2$O$_3$ based photodetectors by using the conventional rigid single crystal substrates; and more importantly remained robust against more than 1000 cycles of bending tests. In addition, the epitaxy technique described in the report also paves the way for the fabrication of a wide range of flexible epitaxial film devices that utilize the materials with lattice parameters similar to $β$-Ga$_2$O$_3$, including GaN, AlN and SiC.

physics.app-ph

GaZn-VZn acceptor complex defect in Ga-doped ZnO

Identification of complex defect has been a long-sought-after physics problem for controlling the defect population and engineering the useful properties in wide bandgap oxide semiconductors. Here we report a systematic study of (GaZn-VZn)- acceptor complex defect via zinc self-diffusion in Ga-doped ZnO isotopic heterostructures, which were conceived and prepared with delicately controlled growth conditions. The secondary ion mass spectrometry and temperature-dependent Hall-effect measurements reveal that a high density of controllable (GaZn-VZn)- is the predominant compensating defect in Ga-doped ZnO. The binding energy of this complex defect obtained from zinc self-diffusion experiments (~0.78 eV) well matches the electrical activation energy derived from the temperature-dependent electrical measurements (~0.82 eV). The compensation ratios were quantitatively calculated by energetic analysis and scattering process to further validate the compensation effect of (GaZn-VZn)- complex in Ga-doped ZnO. Meanwhile, its energy level structure was suggested based on the photoluminescence spectra, and the lifetime was achieved from the time-resolved photoluminescence measurements. The electron transitions between the (GaZn-VZn)- complex defect levels emit the light at ~650 nm with a lifetime of 10-20 nanoseconds. These findings may greatly pave the way towards novel complex defects-derived optical applications.

cond-mat.mtrl-sci

Flexible transparent high-voltage diodes for energy management in wearable electronics

This work reports flexible fully transparent high-voltage diodes that feature high rectification ratio (Rr 10 8) and high breakdown voltage (Vb 150 V) simultaneously, combined with their applications as building blocks of energy management systems in wearable electronics where triboelectric nanogenerators (TENGs) are used as power source. Both experimental results and technology computer aided design (TCAD) simulations suggest that Rr and Vb can be modulated by the offset length in an opposite tendency. The low reverse leakage current (fA/MICRON) guarantees an ultra-low power consumption in standby mode, which is a core issue in wearable device applications. Besides the unprecedented electrical performance, the diodes exhibit good mechanical robustness with minimal degradation throughout the strain and fatigue tests. By incorporating these high-voltage diodes into half-wave and full-wave rectifier circuits, the high alternating current (AC) output voltage of TENGs is successfully rectified into direct current (DC) voltage and charged into supercapacitors (SCs), indicating their high integration and compatibility with TENGs, and thus their promising applications in various wearable electronic systems.

physics.app-ph

Flexible Transparent Field-Effect Diodes Fabricated at Low-Temperature with All Oxide Materials

Flexible fully transparent diodes with high rectification ratio of 5 e 8 are fabricated with all oxide materials at low temperature. The devices are optically transparent in visible spectra range and electrically robust while mechanically bending. Distinguished from other diodes, these diodes utilize diode-connected thin-film transistor architecture and follow field-effect principles.

cond-mat.mtrl-sci

Fluorine doping: A feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components

N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg0.51Zn0.49O active components, which has been reliably achieved by fluorine doping via radio-frequency plasma assisted molecular beam epitaxial growth. Fluorine dopants were demonstrated to be effective donors in Mg0.51Zn0.49O single crystal film having a solar-blind 4.43 eV bandgap, with an average concentration of 1.0E19 F/cm3.The dramatically increased carrier concentration (2.85E17 cm-3 vs ~1014 cm-3) and decreased resistivity (129 ohm.cm vs ~10E6 ohm cm) indicate that the electrical properties of semi-insulating Mg0.51Zn0.49O film can be delicately regulated by F doping. Interestingly, two donor levels (17 meV and 74 meV) associated with F were revealed by temperature-dependent Hall measurements. A Schottky type metal-semiconductor-metal ultraviolet photodetector manifests a remarkably enhanced photocurrent, two orders of magnitude higher than that of the undoped counterpart. The responsivity is greatly enhanced from 0.34 mA/W to 52 mA/W under 10 V bias. The detectivity increases from 1.89E9 cm Hz1/2/W to 3.58eE10 cm Hz1/2/W under 10 V bias at room temperature.These results exhibit F doping serves as a promising pathway for improving the performance of high-Mg-content MgxZn1-xO-based devices.

cond-mat.mtrl-sci

Oxygen vacancies: The origin of n-type conductivity in ZnO

Oxygen vacancy (VO) is a common native point defects that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental understanding of VO is still very sparse. Specifically, whether VO is mainly responsible for the n-type conductivity in ZnO has been still unsettled in the past fifty years. Here we report on a study of oxygen self-diffusion by conceiving and growing oxygen-isotope ZnO heterostructures with delicately-controlled chemical potential and Fermi level. The diffusion process is found to be predominantly mediated by VO. We further demonstrate that, in contrast to the general belief of their neutral attribute, the oxygen vacancies in ZnO are actually +2 charged and thus responsible for the unintentional n-type conductivity as well as the non-stoichiometry of ZnO. The methodology can be extended to study oxygen-related point defects and their energetics in other technologically important oxide materials.

cond-mat.mtrl-sci