arXiv subjects

Zeqi Chen

Publications and source records attributed to Zeqi Chen.

4 recordsLinked to original sources

arXiv2025

Bridging Code Graphs and Large Language Models for Better Code Understanding

Large Language Models (LLMs) have demonstrated remarkable performance in code intelligence tasks such as code generation, summarization, and translation. However, their reliance on linearized token sequences limits their ability to understand the structural semantics of programs. While prior studies have explored graphaugmented prompting and structure-aware pretraining, they either suffer from prompt length constraints or require task-specific architectural changes that are incompatible with large-scale instructionfollowing LLMs. To address these limitations, this paper proposes CGBridge, a novel plug-and-play method that enhances LLMs with Code Graph information through an external, trainable Bridge module. CGBridge first pre-trains a code graph encoder via selfsupervised learning on a large-scale dataset of 270K code graphs to learn structural code semantics. It then trains an external module to bridge the modality gap among code, graph, and text by aligning their semantics through cross-modal attention mechanisms. Finally, the bridge module generates structure-informed prompts, which are injected into a frozen LLM, and is fine-tuned for downstream code intelligence tasks. Experiments show that CGBridge achieves notable improvements over both the original model and the graphaugmented prompting method. Specifically, it yields a 16.19% and 9.12% relative gain in LLM-as-a-Judge on code summarization, and a 9.84% and 38.87% relative gain in Execution Accuracy on code translation. Moreover, CGBridge achieves over 4x faster inference than LoRA-tuned models, demonstrating both effectiveness and efficiency in structure-aware code understanding.

cs.CL↗

arXiv2025

Investigation of the Physical Mechanism behind Retention Loss in FeFETs with MIFIFIS Gate Structure

A Metal-Gate Blocking Layer (GBL)- Ferroelectric-Tunnel Dielectric Layer (TDL)-Ferroelectric -Channel Insulator (Ch.IL)-Si (MIFIFIS) structure is proposed to achieve a larger MW for applications in Fe-NAND. However, the large retention loss (RL) in the MIFIFIS structure restricts its application. In this work, we vary the physical thickness of the GBL and TDL, and conduct an in-depth analysis of the energy bands of the gate structure to investigate the physical mechanism behind the RL in FeFETs with the MIFIFIS structure. The physical origin of the RL is that the electric field direction across the TDL reduces the potential barrier provided by the ferroelectric near the silicon substrate. Based on the above physical mechanism, the RL can be reduced to 12% and 0.2% by redesigning the gate structure or reducing the pulse amplitude, respectively. Our work contributes to a deeper understanding of the physical mechanism behind the RL in FeFETs with the MIFIFIS gate structure. It provides guidance for enhancing the reliability of FeFETs.

physics.app-ph↗

arXiv2024

Effect of Top Al$_2$O$_3$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) Gate Structure

We investigate the effect of top Al2O3 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistors (Si-FeFETs) with TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) gate structure. We find that the MW first increases and then remains almost constant with the increasing thickness of the top Al2O3. The phenomenon is attributed to the lower electric field of the ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ in the MIFIS structure with a thicker top Al2O3 after a program operation. The lower electric field makes the charges trapped at the top Al2O3/Hf0.5Zr0.5O$_2$ interface, which are injected from the metal gate, cannot be retained. Furthermore, we study the effect of the top Al$_2$O$_3$ interlayer thickness on the reliability (endurance characteristics and retention characteristics). We find that the MIFIS structure with a thicker top Al$_2$O$_3$ interlayer has poorer retention and endurance characteristics. Our work is helpful in deeply understanding the effect of top interlayer thickness on the MW and reliability of Si-FeFETs with MIFIS gate stacks.

cond-mat.mtrl-sci↗

arXiv2022

Dual Clustering Co-teaching with Consistent Sample Mining for Unsupervised Person Re-Identification

In unsupervised person Re-ID, peer-teaching strategy leveraging two networks to facilitate training has been proven to be an effective method to deal with the pseudo label noise. However, training two networks with a set of noisy pseudo labels reduces the complementarity of the two networks and results in label noise accumulation. To handle this issue, this paper proposes a novel Dual Clustering Co-teaching (DCCT) approach. DCCT mainly exploits the features extracted by two networks to generate two sets of pseudo labels separately by clustering with different parameters. Each network is trained with the pseudo labels generated by its peer network, which can increase the complementarity of the two networks to reduce the impact of noises. Furthermore, we propose dual clustering with dynamic parameters (DCDP) to make the network adaptive and robust to dynamically changing clustering parameters. Moreover, Consistent Sample Mining (CSM) is proposed to find the samples with unchanged pseudo labels during training for potential noisy sample removal. Extensive experiments demonstrate the effectiveness of the proposed method, which outperforms the state-of-the-art unsupervised person Re-ID methods by a considerable margin and surpasses most methods utilizing camera information.

cs.CV↗