arXiv subjects

Zesen Fu

Publications and source records attributed to Zesen Fu.

3 recordsLinked to original sources

arXiv2026

Two-Dimensional Spin-Antiferroelectric Altermagnets with Giant Spin Splitting: From Model to Material Realization

The realization of multiferroic altermagnets featuring giant intrinsic spin splitting, hold great promise for next-generation spintronics. In this work, based on the recently proposed concept of spin-antiferroelectric (spin-AFE), we construct a class of two-dimensional (2D) multiferroic altermagnets, termed 2D spin-antiferroelectric altermagnets (2D spin-AFEAMs), enabling electrical control of spin polarization via a gate field. Furthermore, we propose a general design strategy for constructing 2D spin-AFEAMs with large intrinsic spin splitting. Guided by this strategy, we predict monolayer $(\mathrm{CoCl})_2\mathrm{Te}$ and its family materials as potential candidates of 2D spin-AFEAM. We uncover a highly tunable transport regime in monolayer $(\mathrm{CoCl})_2\mathrm{Te}$, where the spin current can be switched via the in-plane electric field angle when hole-doped, and via the gate field polarity when electron-doped. Our work enriches the family of 2D multiferroics and provides a blueprint for realizing high-performance, electrically switchable altermagnetic spintronic devices.

cond-mat.mtrl-sci↗

arXiv2025

A Dual-Gate Altermagnetic Tunnel Junction Based on Bilayer Cr$_{2}$SeO

Altermagnets demonstrate significant potential in spintronics due to their unique non-relativistic spin-splitting properties, yet altermagnetic devices still face challenges in efficiently switching logic states. Here, we report electrostatically controllable spin-momentum locking in bilayer Cr$_{2}$SeO and design a dual-gate altermagnetic tunnel junction (AMTJ), which can switch between high and low resistance states without switching the N\'eel vector. First-principles calculations demonstrate that vertical electric field can induce significant spin splitting in bilayer Cr$_{2}$SeO. Reversing the electric field direction can alter the spin-momentum locking in bilayer Cr$_{2}$SeO. Leveraging this electric-field-tunable spin splitting, the dual-gate AMTJ exhibits an ultrahigh tunneling magnetoresistance (TMR) ratio of $10^{7}$. This work provides theoretical support for the design of fully electrically controlled AMTJs and demonstrates their great potential for applications in spintronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Multiple Topological Phases Controlled via Strain in Two-Dimensional Altermagnets

Altermagnets (AMs) are an emergent class of magnetic materials that combine properties of ferromagnets and antiferromagnets, exhibiting spin-polarized Fermi surfaces and zero net magnetic moment due to combined time-reversal and crystal symmetry. Here, we construct a Kondo-lattice model on a two-dimensional square Lieb lattice to investigate the topological properties of AMs. We identify a type-II quantum spin Hall state characterized by spin-polarized counterpropagating edge states. Breaking the $C_{4z}\mathcal{T}$ symmetry, which connects magnetic sublattices, induces a transition to a quantum anomalous Hall state. We further establish a strain-induced mechanism to control these topological phase transitions and present the corresponding phase diagram. Finally, we demonstrate the predicted transitions in monolayer CrO, a realistic altermagnetic candidate, using first-principles calculations. Our findings highlight the potential of 2D AMs as a versatile platform for topological spintronics, enabling strain-tunable helical and chiral edge states within a single system.

cond-mat.mes-hall↗