arXiv subjects

Zhaochen Liu

Publications and source records attributed to Zhaochen Liu.

24 records · Page 2Linked to original sources

arXiv2021

Unoccupied Topological Surface State in MnBi$_2$Te$_4$

The unoccupied part of the band structure in the magnetic topological insulator MnBi$_2$Te$_4$ is studied by first-principles calculations. We find a second, unoccupied topological surface state with similar electronic structure to the celebrated occupied topological surface state. This state is energetically located approximate $1.6$ eV above the occupied Dirac surface state around $Γ$ point, which permit it to be directly observed by the two-photon angle-resolved photoemission spectroscopy. We propose a unified effective model for the occupied and unoccupied surface states. Due to the direct optical coupling between these two surface states, we further propose two optical effects to detect the unoccupied surface state. One is the polar Kerr effect in odd layer from nonvanishing ac Hall conductance $σ_{xy}(ω)$, and the other is higher-order terahertz-sideband generation in even layer, where the non-vanishining Berry curvature of the unoccupied surface state is directly observed from the giant Faraday rotation of optical emission.

cond-mat.mes-hall↗

arXiv2021

Magnetic moiré surface states and flat chern band in topological insulators

We theoretically study the effect of magnetic moiré superlattice on the topological surface states by introducing a continuum model of Dirac electrons with a single Dirac cone moving in the time-reversal symmetry breaking periodic pontential. The Zeeman-type moiré potentials generically gap out the moiré surface Dirac cones and give rise to isolated flat Chern minibands with Chern number $\pm1$. This result provides a promising platform for realizing the time-reversal breaking correlated topological phases. In a $C_6$ periodic potential, when the scalar $U_0$ and Zeeman $Δ_1$ moiré potential strengths are equal to each other, we find that energetically the first three bands of $Γ$-valley moiré surface electrons are non-degenerate and realize i) an $s$-orbital model on a honeycomb lattice, ii) a degenerate $p_x,p_y$-orbitals model on a honeycomb lattice, and iii) a hybridized $sd^2$-orbital model on a kagome lattice, where moiré surface Dirac cones in these bands emerge. When $U_0\neqΔ_1$, the difference between the two moiré potential serves as an effective spin-orbit coupling and opens a topological gap in the emergent moiré surface Dirac cones.

cond-mat.mes-hall↗

arXiv2020

Intrinsic topological phases in Mn$_2$Bi$_2$Te$_5$ tuned by the layer magnetization

The interplay between band topology and magnetic order could generate a variety of time-reversal-breaking gapped topological phases with exotic topological quantization phenomena, such as quantum anomalous Hall (QAH) insulators and axion insulators (AxI). Here by combining analytic models and first-principles calculations, we predict QAH and AxI phases can be realized in thin film of an intrinsic antiferromagnetic van der Waal material Mn$_2$Bi$_2$Te$_5$. The phase transition between QAH and AxI is tuned by the layer magnetization, which would provide a promising platform for chiral superconducting phases. We further present a simple and unified continuum model that captures the magnetic topological features, and is generic for Mn$_2$Bi$_2$Te$_5$ and MnBi$_2$Te$_4$ family materials.

cond-mat.mes-hall↗

arXiv2020

Dynamical magnetoelectric coupling in axion insulator thin films

Axion insulator is an exotic magnetic topological insulator with zero Chern number but a nonzero quantized Chern-Simons magnetoelectric coupling. A conclusive experimental evidence for axion insulators is still lacking due to the small signal of topological magnetoelectric effect (TME). Here we show that the dynamical magnetoelectric coupling can be induced by the \emph{out-of-plane} surface magnetization dynamics in axion insulator thin films, which further generates a polarization current in the presence of an external magnetic field in the same direction. Such a current is finite in the bulk and increases as the film thickness $d$ decreases, in opposite to TME current which decreases as $d$ decreases. Remarkably, the current in thin films at magnetic resonance is at least ten times larger than that of TME, and thus may serve as a smoking gun signature for axion insulators.

cond-mat.mes-hall↗

arXiv2020

Anisotropic topological magnetoelectric effect in axion insulators

Three-dimensional topological insulators or axion insulators exhibit the topological magnetoelectric effect, which is isotropic with a universal coefficient of proportionality quantized in units of $e^2/2h$. Here we study the finite-size effect of topological magnetoelectric effect, and find the magnetoelectric coefficients are anisotropic, namely $α_{xx}\neqα_{zz}$. Both of them are shown to converge to a quantized value when the thickness of topological insulator film $d$ increases reaching the three-dimensional bulk limit. The nonzero value of $(α_{xx}-α_{zz})\propto1/d$ could be measured by using the gyrotropic or nonreciprocal birefringence of terahertz light. The unique $1/d$ dependence on film thickness of the rotation angle of optical principle axes is the manifestation of topological magnetoelectric effect, which may also serve as a smoking gun signature for axion insulators.

cond-mat.mes-hall↗

arXiv2019

In-Plane Magnetic-Field-Induced Quantum Anomalous Hall Plateau Transition

We study the critical properties of the in-plane magnetic field-induced quantum anomalous Hall (QAH) plateau transition in axion insulators. Take even septuple layer film MnBi$_2$Te$_4$ as a concrete example, we find the mirror symmetry breaking from in-plane field could induce axion insulator to QAH insulator transition, which belongs to generic integer quantum Hall plateau transition. The chiral Majorana fermion does not necessarily emerge at the QAH plateau transition in MnBi$_2$Te$_4$ due to strong exchange field, but may be quite feasible in its descendent materials MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$.

cond-mat.mes-hall↗