arXiv subjects

Zhaolong Liu

Publications and source records attributed to Zhaolong Liu.

5 recordsLinked to original sources

arXiv2026

Breaking the mutual exclusivity between metallicity and ferroelectricity in a non-polar covalent semiconductor via orbital selective doping

The mutual exclusion of ferroelectricity and metallic conductivity is a long-standing tenet because itinerant electrons screen long-range Coulomb forces that stabilize the bulk polar order. Here, we break this paradigm by heavily doping a non-polar covalent semiconductor of cubic silicon carbide (3C-SiC) with nitrogen. This introduces heavy electron doping, inducing metallicity and driving a structural transition from the non-polar F-43m to the polar R3m symmetry via the pseudo-Jahn-Teller effect. Remarkably, we provide direct, atomic-scale visualization of about 180° polarization reversal under an external voltage bias in a ferroelectric metal. The strongly directional character of antibonding orbitals occupied by conduction electrons prevents them from screening the local Si-C polarization, resulting in the coexistence of metallicity and ferroelectricity. Ferroelectric tunnel junctions demonstrate nonvolatile memory properties with a well-defined high-resistance state (HRS) and low-resistance state (LRS), an ultrahigh response speed (~50 ns), an ultralow operating voltage (1 V), an endurance exceeding 85927 cycles, and a projected retention time of 100 years. Our results provide a novel strategy for pioneering ferroelectricity in a metal, a new ferroelectric metal platform for exploring exotic properties, and a ferroelectric device with high performance that meets the requirements for low consumption and high-speed non-volatile devices.

cond-mat.mtrl-sci↗

arXiv2026

Superconductivity of 30.4 K and its Reemergence under Pressure in Fe1.11Se Synthesized via Ion-exchange and De-intercalation Reaction

Binary stoichiometry FeSe (s-FeSe) is a well-known parent of high-temperature unconventional superconductors owing to its charge-neutral layer, highly tunable structure and electronic properties, and rich interplays among multiple electronic phases. Yet the s-FeSe synthesized via high-temperature equilibrium reactions bears the notorious interstitial Fe,where merely 3% of them is sufficient to kill the superconductivity. Here, we successfully synthesized a new non-stoichiometric Fe1.11Se single crystal with a superconducting onset temperature (Tconset) of 30.4 K through a hydrothermal ion-exchange and de-intercalation route. 11% interstitial Fe ions exceed the equilibrium phase diagram limit. Intriguingly, under physical pressure, the Tconset of exhibits a "V"-shaped evolution with a minimum at 2-2.6 GPa, and then upturning into a second superconducting region, reminiscent of the behaviors in FeSe intercalates. Furthermore, a pressure-induced possible magnetic order, previously only observed in pressurized s-FeSe, shows up. These results offer fresh insights into the role of interstitial Fe in governing superconducting and transport properties under non-equilibrium synthesis and tuning strategies.

cond-mat.supr-con↗

arXiv2025

Ferroelectricity in undoped HfO2 down to one-unit-cell on Si substrate

Hafnium oxide (HfO2), particularly at low-dimensional scales, exhibits extensive promising applications in ultrahigh density devices like low-power logic and non-volatile memory devices due to its compatibility with current semiconductor technology1-5. However, achieving ferroelectricity (FE) at ultimate scale especially in undoped HfO2 remains challenging as the non-centrosymmetric FE phase, so-called O-III (space group: Pca21) is metastable and FE has a strong tendency of depolarization with the decrease in thickness6. Up to now, this phase has usually stabilized via doping with other elements7-9. But the minimum film thickness is still limited to 1 nm, about 2-unit-cell, to keep FE8. Thinner and undoped films, conducive to further miniature device size and avoid contamination during deposition process, have been a challenge to fabricate on Si substrates. Herein, we report the robust FE observed in undoped HfO2 ultrathin films directly grown on Si substrate via atomic layer deposition (ALD) and post-heat treat in vacuum. The so-fabricated ferroelectric O-III phase contains about 4.48 at% oxygen vacancy, is robust even monoclinic phase (space group: P21/c) coexists. The spontaneous and switchable polarization is remarkably stable, still surviving even in films down to 0.5 nm (one-unit-cell). Our results show the robust FE O-III phase can be obtained in films down to one-unit-cell in thickness on Si, providing a practical way to fabricating this important material in thickness limit.

cond-mat.mtrl-sci↗

arXiv2024

Weakly Coupled Type-II Superconductivity in a Laves compound ZrRe2

We present a comprehensive investigation of the superconducting properties of ZrRe2, a Re-based hexagonal Laves compounds. ZrRe2 crystallizes in a C14-type structure (space group P63/mmc), with cell parameters a=b=5.2682(5) and c=8.63045 . Resistivity and magnetic susceptibility data both suggest that ZrRe2 exhibits a sharp superconducting transition above 6.1 K. The measured lower and upper critical fields are 6.27 mT and 12.77 T, respectively, with a large upper critical field that approached the Pauli limit.Measurements of the heat capacity confirm the presence of bulk superconductivity, with a normalized specific heat change of 1.24 and an electron-phonon strength of 0.69 . DFT calculations revealed that the band structure of ZrRe2 is intricate and without van-Hove singularity. The observed large specific heat jump, combined with the electron-phonon strength , suggests that ZrRe2 is a weakly coupled type II superconductor.

cond-mat.supr-con↗

arXiv2023

Pressure-tuned superconductivity in the Dirac semimetal PdTe

We report an unusual evolution of superconductivity (SC) in the three-dimensional Dirac semimetal PdTe with increasing pressure up to $\sim$50 GPa. The compressed PdTe exhibits a sudden reversal in the superconducting transition temperature $T\mathrm{_c}$, from an initial decrease with pressure to an increase above a critical pressure $P\mathrm{_c} \approx$ 15 GPa, showing a V-shaped feature composed of SC-I and SC-II phases due to a structural phase transition through $P\mathrm{_c}$. Subsequently, the $T\mathrm{_c}$ goes into a plateau around 2.5 K when the pressure is higher than $\sim$32 GPa. In addition, we find the variations of carrier concentrations and mobilities also manifest a similar trend on the pressure response as the $T\mathrm{_c}$, and the normal-state electronic properties change from the electron-dominated single-band model to two-carrier model after the structural phase transition, implying the close correlation between electronic properties and two SC phases. Our findings establish the SC of PdTe is highly tunable under varying pressures.

cond-mat.supr-con↗