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Zhaopeng Guo

Publications and source records attributed to Zhaopeng Guo.

At least 19 recordsLinked to original sources

Bulk Ising superconductivity in an intercalated TaSe2 bilayer structure

Ising spin-orbit coupling in bulk systems has drawn considerable interest for its ability to conveniently construct spin-orbit environments and enable exotic quantum phenomena. In this work, we synthesize intercalated 2Hb-TaSe$_2$ bilayers with noncentrosymmetric structure and, through multifaceted analysis, present multiple lines of evidence for the emergence of bulk Ising superconductivity. Resistivity measurements reveal anisotropic superconducting behavior, with a remarkably large in-plane upper critical field $B_{c2}^{\|}$ that exceeds the Pauli limit $B_{p}$. Band structure calculations further show band splitting accompanied by out-of-plane spin polarization. Collectively, these observations point to the presence of Ising superconductivity. Additional measurements of the thickness-dependent ratio $B_{c2}^{\|}$/$B_{p}$ and the superconducting diode effect not only further support the Ising superconducting nature of this material, but also reveal additional features of bulk Ising superconductivity evolving with thickness. Our findings provide valuable insights that may contribute to the search for bulk Ising superconductors.

cond-mat.supr-con

A robust and tunable Luttinger liquid in correlated edge of transition-metal second-order topological insulator Ta$_2$Pd$_3$Te$_5$

The interplay between topology and interaction always plays an important role in condensed matter physics and induces many exotic quantum phases, while rare transition metal layered material (TMLM) has been proved to possess both. Here we report a TMLM Ta$_2$Pd$_3$Te$_5$ has the two-dimensional second-order topology (also a quadrupole topological insulator) with correlated edge states - Luttinger liquid. It is ascribed to the unconventional nature of the mismatch between charge- and atomic- centers induced by a remarkable double-band inversion. This one-dimensional protected edge state preserves the Luttinger liquid behavior with robustness and universality in scale from micro- to macro- size, leading to a significant anisotropic electrical transport through two-dimensional sides of bulk materials. Moreover, the bulk gap can be modulated by the thickness, resulting in an extensive-range phase diagram for Luttinger liquid. These provide an attractive model to study the interaction and quantum phases in correlated topological systems.

cond-mat.mes-hall

Superconductivity in unconventional metals

Based on first-principles calculations, we demonstrate that 1H/2H-phase transition metal dichalcogenides MX2 (M=Nb,Ta; X=S,Se,Te) are unconventional metals, which have an empty-site band of $A_1'@1e$ elementary band representation at the Fermi level. The computed phonon dispersions indicate the stability of the system at high temperatures, while the presence of the soft phonon mode suggests a phase transition to the charge density wave state at low temperatures. Based on the Bardeen-Cooper-Schrieffer theory and computed electron-phonon coupling, our calculations show that the superconductivity (SC) in NbSe2 is mainly attributed to the soft phonon mode due to the half filling of the empty-site band. Accordingly, the SC has been predicted in unconventional metals TaNS monolayer and 2H-TaN2 bulk with computed $T_C=$ 10 K and 26 K respectively. These results demonstrate that the unconventional metals with partial filling of the empty-site band offer an attractive platform to search for superconductors.

cond-mat.mtrl-sci

Non-centrosymmetric, transverse structural modulation in SrAl4, and elucidation of its origin in the BaAl4 family of compounds

At ambient conditions SrAl4 adopts the BaAl4 structure type with space group I4/mmm. It undergoes a charge-density-wave (CDW) transition at TCDW = 243 K, followed by a structural transition at TS = 87 K. Temperature-dependent single-crystal X-ray diffraction (SXRD) leads to the observation of incommensurate superlattice reflections at q = σc* with σ= 0.1116 at 200 K. The CDW has orthorhombic symmetry with the acentric superspace group F222(00sigma)00s, where F222 is a subgroup of Fmmm as well as of I4/mmm. Atomic displacements mainly represent a transverse wave, with displacements that are 90 deg out of phase between the two diagonal directions of the I-centered unit cell, resulting in a helical wave. Small longitudinal displacements are provided by the second harmonic modulation. The orthorhombic phase realized in SrAl4 is similar to that found in EuAl4. Electronic structure calculations and phonon calculations by density functional theory (DFT) have failed to reveal the mechanism of CDW formation. However, DFT reveals that Al atoms dominate the density of states near the Fermi level, thus, corroborating the SXRD measurements. SrAl4 remains incommensurately modulated at the structural transition, where the symmetry lowers from orthorhombic to b-unique monoclinic. We have identified a simple criterion, that correlates the presence of a phase transition with the interatomic distances. Only those compounds XAl4-xGax(X = Ba, Eu, Sr, Ca; 0 < x <4) undergo phase transitions, for which the ratio c/a falls within the narrow range 2.51 < c/a < 2.54.

cond-mat.str-el

Spontaneous gap opening and potential excitonic states in an ideal Dirac semimetal Ta$_2$Pd$_3$Te$_5$

The opening of an energy gap in the electronic structure generally indicates the presence of interactions. In materials with low carrier density and short screening length, long-range Coulomb interaction favors the spontaneous formation of electron-hole pairs, so-called excitons, opening an excitonic gap at the Fermi level. Excitonic materials host unique phenomenons associated with pair excitations. However, there is still no generally recognized single-crystal material with excitonic order, which is, therefore, awaited in condensed matter physics. Here, we show that excitonic states may exist in the quasi-one-dimensional material Ta$_2$Pd$_3$Te$_5$, which has an almost ideal Dirac-like band structure, with Dirac point located exactly at Fermi level. We find that an energy gap appears at 350 K, and it grows with decreasing temperature. The spontaneous gap opening is absent in a similar material Ta$_2$Ni$_3$Te$_5$. Intriguingly, the gap is destroyed by the potassium deposition on the crystal, likely due to extra-doped carriers. Furthermore, we observe a pair of in-gap flat bands, which is an analog of the impurity states in a superconducting gap. All these observations can be properly explained by an excitonic order, providing Ta$_2$Pd$_3$Te$_5$ as a new and promising candidate realizing excitonic states.

cond-mat.mtrl-sci

Evidence for an Excitonic Insulator State in Ta$_2$Pd$_3$Te$_5$

The excitonic insulator (EI) is an exotic ground state of narrow-gap semiconductors and semimetals arising from spontaneous condensation of electron-hole pairs bound by attractive Coulomb interaction. Despite research on EIs dating back to half a century ago, their existence in real materials remains a subject of ongoing debate. In this study, through systematic experimental and theoretical investigations, we provide evidence for the existence of an EI ground state in a van der Waals compound Ta$_2$Pd$_3$Te$_5$. Density-functional-theory calculations suggest that it is a semimetal with a small band overlap, whereas various experiments exhibit an insulating ground state with a clear band gap. Upon incorporating electron-hole Coulomb interaction into our calculations, we obtain an EI phase where the electronic symmetry breaking opens a many-body gap. Angle-resolved photoemission spectroscopy measurements exhibit that the band gap is closed with a significant change in the dispersions as the number of thermally excited charge carriers becomes sufficiently large in both equilibrium and nonequilibrium states. Structural measurements reveal a slight breaking of crystal symmetry with exceptionally small lattice distortion in the insulating state, which cannot account for the significant gap opening. Therefore, we attribute the insulating ground state with a gap opening in Ta$_2$Pd$_3$Te$_5$ to exciton condensation, where the coupling to the symmetry-breaking electronic state induces a subtle change in the crystal structure.

cond-mat.mtrl-sci

Layer-dependent Raman spectroscopy of ultrathin Ta$_2$Pd$_3$Te$_5$

Two-dimensional topological insulators (2DTIs) or quantum spin Hall insulators are attracting increasing attention due to their potential applications in next-generation spintronic devices. Despite their promising prospects, realizable 2DTIs are still limited. Recently, Ta2Pd3Te5, a semiconducting van der Waals material, has shown spectroscopic evidence of quantum spin Hall states. However, achieving controlled preparation of few- to monolayer samples, a crucial step in realizing quantum spin Hall devices, has not yet been achieved. In this work, we fabricated few- to monolayer Ta$_2$Pd$_3$Te$_5$ and performed systematic thickness- and temperature-dependent Raman spectroscopy measurements. Our results demonstrate that Raman spectra can provide valuable information to determine the thickness of Ta2Pd3Te5 thin flakes. Moreover, our angle-resolved polarized Raman (ARPR) spectroscopy measurements show that the intensities of the Raman peaks are strongly anisotropic due to the quasi-one-dimensional atomic structure, providing a straightforward method to determine its crystalline orientation. Our findings may stimulate further efforts to realize quantum devices based on few or monolayer Ta$_2$Pd$_3$Te$_5$.

cond-mat.mtrl-sci

Spin-Resolved Topology and Partial Axion Angles in Three-Dimensional Insulators

Symmetry-protected topological crystalline insulators (TCIs) have primarily been characterized by their gapless boundary states. However, in time-reversal- ($\mathcal{T}$-) invariant (helical) 3D TCI$\unicode{x2014}$termed higher-order TCIs (HOTIs)$\unicode{x2014}$the boundary signatures can manifest as a sample-dependent network of 1D hinge states. We here introduce nested spin-resolved Wilson loops and layer constructions as tools to characterize the intrinsic bulk topological properties of spinful 3D insulators. We discover that helical HOTIs realize one of three spin-resolved phases with distinct responses that are quantitatively robust to large deformations of the bulk spin-orbital texture: 3D quantum spin Hall insulators (QSHIs), "spin-Weyl" semimetals, and $\mathcal{T}$-doubled axion insulator (T-DAXI) states with nontrivial partial axion angles indicative of a 3D spin-magnetoelectric bulk response and half-quantized 2D TI surface states originating from a partial parity anomaly. Using ab-initio calculations, we demonstrate that $β$-MoTe$_2$ realizes a spin-Weyl state and that $α$-BiBr hosts both 3D QSHI and T-DAXI regimes.

cond-mat.mes-hall

Observation of Emergent Superconductivity in the Quantum Spin Hall Insulator Ta2Pd3Te5 via Pressure Manipulation

Quantum Spin Hall (QSH) insulators possess distinct helical in-gap states, enabling their edge states to act as one-dimensional conducting channels when backscattering is prohibited by time-reversal symmetry. However, it remains challenging to achieve high-performance combinations of nontrivial topological QSH states with superconductivity for applications and requires understanding of the complicated underlying mechanisms. Here, our experimental observations for a novel superconducting phase in the pressurized QSH insulator Ta2Pd3Te5 is reported, and the high-pressure phase maintains its original ambient pressure lattice symmetry up to 45 GPa. Our in-situ high-pressure synchrotron X-ray diffraction, electrical transport, infrared reflectance, and Raman spectroscopy measurements, in combination with rigorous theoretical calculations, provide compelling evidence for the association between the superconducting behavior and the abnormal densified phase. The isostructural transition was found to modify the topology of the Fermi surface directly, accompanied by a fivefold amplification of the density of states at 20 GPa compared to ambient pressure, which synergistically fosters the emergence of robust superconductivity. A profound comprehension of the fascinating properties exhibited by the compressed Ta2Pd3Te5 phase is achieved, highlighting the extraordinary potential of van der Waals (vdW) QSH insulators for exploring and investigating high-performance electronic advanced devices under extreme conditions.

cond-mat.mtrl-sci

Large shift current, $π$ Zak phase and unconventional nature in Se and Te

Recently, unconventional materials (or obstructed atomic insulators) have attracted much attention owing to the unconventional feature of mismatch between Wannier centers and atomic positions. In this paper, we demonstrate that the trigonal selenium and tellurium host an unconventional nature in both electronic and phonon spectra. In electronic band structures, the band representation (BR) decomposition for occupied bands has to contain the essential BR of $A@3b$, and the real-space invariant is $δ_1@3b=-1$. The $π$ Zak phase suggests that the one-dimensional Se/Te chain is a chiral Su-Schrieffer-Heeger chain. The effective magnetism can be induced by $p$ states at ends. More importantly, a large shift current is obtained in Se quantum well. In addtion, in phonon spectra, three sets of phonon bands are well separated and assigned to $B@3b$, $B@3a$, and $A@3b$ BRs, respectively. Thus, the obstructed phonon states are predicted on the (0001) surface. As the prototypes of unconventional materials in both electronic and phonon spectra, our findings could create much interest in the study of obstructed surface electronic and phonon states in these novel materials.

cond-mat.mtrl-sci

Quadrupole topological insulators in Ta2M3Te5 (M= Ni, Pd) monolayers

Higher-order topological insulators have been introduced in the precursory Benalcazar-Bernevig-Hughes quadrupole model, but no electronic compound has been proposed to be a quadrupole topological insulator (QTI) yet. In this work, we predict that Ta$_2M_3$Te$_5$ ($M=$ Pd, Ni) monolayers can be 2D QTIs with second-order topology due to the double-band inversion. A time-reversal-invariant system with two mirror reflections (M$_x$ and M$_y$) can be classified by Stiefel-Whitney numbers ($w_1, w_2$) due to the combined symmetry $TC_{2z}$. Using the Wilson loop method, we compute $w_1=0$ and $w_2=1$ for Ta$_2$Ni$_3$Te$_5$, indicating a QTI with $q^{xy}=e/2$. Thus, gapped edge states and localized corner states are obtained. By analyzing atomic band representations, we demonstrate that its unconventional nature with an essential band representation at an empty site, i.e., $A_g@4e$, is due to the remarkable double-band inversion on Y-$Γ$. Then, we construct an eight-band quadrupole model with $M_x$ and $M_y$ successfully for electronic materials. These transition-metal compounds of $A_2M_{1,3}X_5$ ($A$ = Ta, Nb; $M$ = Pd, Ni; $X$ = Se, Te) family provide a good platform for realizing the QTI and exploring the interplay between topology and interactions.

cond-mat.mtrl-sci

Magnetic band representations, Fu-Kane-like symmetry indicators and magnetic topological materials

To realize novel topological phases and to pursue potential applications in low-energy consumption spintronics, the study of magnetic topological materials is of great interest. Starting from the theory of nonmagnetic topological quantum chemistry [Bradlyn et al., Nature 547, 298 (2017)], we have obtained irreducible (co)representations and compatibility relations (CRs) in momentum space, and we constructed a complete list of magnetic band (co)representations (MBRs) in real space for other MSGs with anti-unitary symmetries (i.e. type-III and type-IV MSGs). The results are consistent with the magnetic topological quantum chemistry [Elcoro et al., Nat. Comm. 12, 5965 (2021)]. Using the CRs and MBRs, we reproduce the symmetry-based classifications for MSGs, and we obtain a set of Fu-Kane-like formulas of symmetry indicators (SIs) in both spinless (bosonic) and spinful (fermionic) systems, which are implemented in an automatic code - TopMat - to diagnose topological magnetic materials. The magnetic topological materials, whose occupied states can not be decomposed into a sum of MBRs, are consistent with nonzero SIs. Lastly, using our online code, we have performed spin-polarized calculations for magnetic compounds in the materials database and find many magnetic topological candidates.

cond-mat.mtrl-sci

Unprotected quadratic band crossing points and quantum anomalous Hall effect in FeB2 monolayer

Quadratic band crossing points (QBCPs) and quantum anomalous Hall effect (QAHE) have attracted the attention of both theoretical and experimental researchers in recent years. Based on first-principle calculations, we find that the FeB$_2$ monolayer is a nonmagnetic semimetal with QBCPs at $K$. Through symmetry analysis and $\mathbf{k}\cdot\mathbf{p}$ invariant theory, we find that the QBCP is not protected by rotation symmetry and consists of two Dirac points with same chirality (Berry phase of $2π$). Once introducing Coulomb interactions, we find that there is a spontaneous-time-reversal-breaking instability of the spinful QBCPs, which gives rise to a $C=2$ QAH insulator with orbital moment ordering.

cond-mat.mes-hall

Unconventional Materials: the mismatch between electronic charge centers and atomic positions

The complete band representations (BRs) have been constructed in the work of topological quantum chemistry. Each BR is expressed by either a localized orbital at a Wyckoff site in real space, or by a set of irreducible representations in momentum space. In this work, we define unconventional materials with a common feature of the mismatch between average electronic centers and atomic positions. They can be effectively diagnosed as whose occupied bands can be expressed as a sum of elementary BRs (eBRs), but not a sum of atomic-orbital-induced BRs (aBRs). The existence of an essential BR at an empty site is described by nonzero real-space invariants (RSIs). The "valence" states can be derived by the aBR decomposition, and unconventional materials are supposed to have an uncompensated total "valence" state. The high-throughput screening for unconventional materials has been performed through the first-principles calculations. We have discovered 423 unconventional compounds, including thermoelectronic materials, higher-order topological insulators, electrides, hydrogen storage materials, hydrogen evolution reaction electrocatalysts, electrodes, and superconductors. The diversity of these interesting properties and applications would be widely studied in the future.

cond-mat.mtrl-sci

Topological insulators in the NaCaBi family with large SOC gaps

By means of first-principles calculations and crystal structure searching techniques, we predict that a new NaCaBi family crystallized into the ZrBeSi-type structure (\ie $P6_{3}/mmc$) are strong topological insulators (STIs). Taking $P6_{3}/mmc$ NaCaBi as an example, the calculated band structure indicates that there is a band inversion between two opposite-parity bands at the $Γ$ point. In contrast to the well-known Bi$_2$Se$_3$ family, the band inversion in the NaCaBi family has already occured even without spin-orbit coupling (SOC), giving rise to a nodal ring surrounding $Γ$ in the $k_z=0$ plane (protected by $M_z$ symmetry). With time reversal symmetry $(\cal T)$ and inversion symmetry $(\cal I)$, the spinless nodal-line metallic phase protected by $[{\cal TI}]^2=1$ is the weak-SOC limit of the spinful topological insulating phase. Upon including SOC, the nodal ring is gapped, driving the system into a STI. Besides inversion symmetry, the nontrivial topology of NaCaBi can also be indicated by $\bar{6}$ symmetry. More surprisingly, the SOC-induced band gap in NaCaBi is about 0.34 eV, which is larger than the energy scale of room temperature. Four other compounds (KBaBi, KSrBi, RbBaBi and RbSrBi) in the family are stable at ambient pressure, both in thermodynamics and lattice dynamics, even though the gaps of them are smaller than that of NaCaBi. Thus, they provide good platforms to study topological states both in theory and experiments.

cond-mat.mtrl-sci

Quantum Spin Hall Effect in Ta$_2$M$_3$Te$_5$ (M = Pd, Ni)

Quantum spin Hall (QSH) effect with great promise for the potential application in spintronics and quantum computing has attracted extensive research interest from both theoretical and experimental researchers. Here, we predict monolayer Ta$_2$Pd$_3$Te$_5$ can be a QSH insulator based on first-principles calculations. The interlayer binding energy in the layered van der Waals compound Ta$_2$Pd$_3$Te$_5$ is 19.6 meV/A$^2$; thus, its monolayer/thin-film structures could be readily obtained by exfoliation. The band inversion near the Fermi level ($E_F$) is an intrinsic characteristic, which happens between Ta-$5d$ and Pd-$4d$ orbitals without spin-orbit coupling (SOC). The SOC effect opens a global gap and makes the system a QSH insulator. With the $d$-$d$ band-inverted feature, the nontrivial topology in monolayer Ta$_2$Pd$_3$Te$_5$ is characterized by the time-reversal topological invariant $\mathbb Z_2=1$, which is computed by the one-dimensional (1D) Wilson loop method as implemented in our first-principles calculations. The helical edge modes are also obtained using surface Green's function method. Our calculations show that the QSH state in Ta$_2M_3$Te$_5$ ($M=$ Pd, Ni) can be tuned by external strain. These monolayers and thin films provide feasible platforms for realizing QSH effect as well as related devices.

cond-mat.mtrl-sci

Ferromagnetic MnSn monolayer epitaxially grown on silicon substrate

Two-dimensional (2D) ferromagnetic materials have been exhibiting promising potential in applications, such as spintronics devices. To grow epitaxial magnetic films on silicon substrate, in the single-layer limit, is practically important but challenging. In this study, we realized the epitaxial growth of MnSn monolayer on Si(111) substrate, with an atomically thin Sn/Si(111)-$2\sqrt{3}\times2\sqrt{3}$- buffer layer, and controlled the MnSn thickness with atomic-layer precision. We discovered the ferromagnetism in MnSn monolayer with the Curie temperature (Tc) of ~54 K. As the MnSn film is grown to 4 monolayers, Tc increases accordingly to ~235 K. The lattice of the epitaxial MnSn monolayer as well as the Sn/Si(111)-$2\sqrt{3}\times2\sqrt{3}$ is perfectly compatible with silicon, and thus an sharp interface is formed between MnSn, Sn and Si. This system provides a new platform for exploring the 2D ferromagnetism, integrating magnetic monolayers into silicon-based technology, and engineering the spintronics heterostructures.

cond-mat.mtrl-sci

Dimensionalities and multiplicities determination of crystal nets

Low-dimensional materials have attracted significant attentions over the past decade. To discover new low-dimensional materials, high-throughout screening methods have been applied in different materials databases. For this purpose, the reliability of dimensionality identification is therefore highly important. In this work, we find that the existence of self-penetrating nets may lead to incorrect results by previous methods. In stead of this, we use the quotient graph to analysis the topologies of structures and compute their dimensionalities. Based on the quotient graph, we can calculate not only the dimensionality but also the multiplicity of self-penetrating structures. As a demonstration, we screened the Crystallography Open Database using our method and found hundreds of structures with different dimensionalities and high multiplicities up to eleven.

cond-mat.mtrl-sci