arXiv subjects

Zhe Cheng

Publications and source records attributed to Zhe Cheng.

51 records · Page 3Linked to original sources

arXiv2019

Thermal Conductance across beta-Ga2O3-diamond Van der Waals Heterogeneous Interfaces

Because of its ultrawide bandgap, high breakdown electric field, and large area affordable substrates grown from the melt, beta Ga2O3 has attracted great attention recently for potential applications of power electronics. However, its thermal conductivity is significantly lower than those of other wide bandgap semiconductors, such as AlN, SiC, GaN, and diamond. To ensure reliable operation with minimal selfheating at high power, proper thermal management is even more essential for Ga2O3 devices. Similarly to the past approaches aiming to alleviate selfheating in GaN HEMTs, a possible solution has been to integrate thin Ga2O3 membranes with diamond to fabricate Ga2O3 on diamond lateral MESFET or MOSFET devices by taking advantage of the ultra high thermal conductivity of diamond. Even though the TBC between wide bandgap semiconductor devices such as GaN HEMTs and a diamond substrate is of primary importance for heat dissipation in these devices, fundamental understanding of the Ga2O3 diamond thermal interface is still missing. In this work, we study the thermal transport across the interfaces of Ga2O3 exfoliated onto a single crystal diamond. The Van der Waals bonded Ga2O3 diamond TBC is measured to be 17 MWm2K1, which is comparable to the TBC of several physical vapor deposited metals on diamond. A Landauer approach is used to help understand phonon transport across perfect Ga2O3 diamond interface, which in turn sheds light on the possible TBC one could achieve with an optimized interface. A reduced thermal conductivity of the Ga2O3 nanomembrane is also observed due to additional phonon membrane boundary scattering. The impact of the Ga2O3substrate TBC and substrate thermal conductivity on the thermal performance of a power device are modeled and discussed.

cond-mat.mes-hall↗

arXiv2019

Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy

The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational-temperature demands. The heat flow in these systems is significantly influenced or even dominated by thermal boundary resistance at interface between dissimilar materials. However, controlling and tuning heat transport across an interface and in the adjacent materials has so far drawn limited attention. In this work, we grow chemical-vapor-deposited (CVD) diamond on silicon substrates by graphoepitaxy and experimentally demonstrate tunable thermal transport across diamond membranes and diamond-silicon interfaces. We observed the highest diamond-silicon thermal boundary conductance (TBC) measured to date and increased diamond thermal conductivity due to strong grain texturing in the diamond near the interface. Additionally, non-equilibrium molecular-dynamics (NEMD) simulations and a Landauer approach are used to understand the diamond-silicon TBC. These findings pave the way for tuning or increasing thermal conductance in heterogeneously integrated electronics that involve polycrystalline materials and will impact applications including electronics thermal management and diamond growth.

cond-mat.mes-hall↗

arXiv2018

Chemical stability and superconductivity in Ag-sheathed CaKFe4As4 superconducting tapes

Ag-sheathed CaKFe4As4 superconducting tapes have been fabricated via the ex-situ powder-in-tube method. Thermal and X-ray diffraction analyses suggest that the CaKFe4As4 phase is unstable at high temperatures. It decomposes into the CaAgAs phase which reacts strongly with the silver sheath. We therefore sintered the tape at 500C and obtain a transport critical current density Jc(4.2 K, 0 T)~ 2.7x10^4 A/cm2. The pinning potential derived from magnetoresistance measurements is one order of magnitude lower than that of the (Ba/Sr)1-xKxFe2As2 tapes. Combining with the scanning electron microscopy and magneto-optical imaging results, we suggest that bad connectivity between superconducting grains caused by the low sintering temperature is the main factor responsible for the low Jc. However, this system is still a promising candidate for superconducting wires and tapes if we further optimize the post-annealing process to achieve better grain connectivity.

cond-mat.supr-con↗

arXiv2018

Diffuson-driven Ultralow Thermal Conductivity in Amorphous Nb2O5 Thin Films

Niobium pentoxide (Nb2O5) has been extensively reported for applications of electrochemical energy storage, memristors, solar cells, light emitting diodes (LEDs), and electrochromic devices. The thermal properties of Nb2O5 play a critical role in device performance of these applications. However, very few studies on the thermal properties of Nb2O5 have been reported and a fundamental understanding of heat transport in Nb2O5 is still lacking. The present work closes this gap and provides the first study of thermal conductivity of amorphous Nb2O5 thin films. Ultralow thermal conductivity is observed without any size effect in films as thin as 48 nm, which indicates that propagons contribute negligibly to the thermal conductivity and that the thermal transport is dominated by diffusons. Density-function-theory (DFT) simulations combined with a diffuson-mediated minimum-thermal-conductivity model confirms this finding. Additionally, the measured thermal conductivity is lower than the amorphous limit (Cahill model), which proves that the diffuson model works better than the Cahill model to describe the thermal conduction mechanism in the amorphous Nb2O5 thin films. Additionally, the thermal conductivity does not change significantly with oxygen vacancy concentration. This stable and low thermal conductivity facilitates excellent performance for applications such as memristors.

cond-mat.mes-hall↗

arXiv2018

Superconducting joint between iron-based superconductor tapes

Superconducting joints are essential for iron-based superconductor's applications in future. In this study, a process for fabricating superconducting joints between Sr1-xKxFe2As2 (Sr-122) tapes is developed for the first time. The Ag sheath was peeled off from one side of each sample. The exposed superconducting parts of the two tapes were joined and wrapped again with Ag foil. The diffusion bonding of the iron-based superconducting joint was achieved by hot-pressing process in Argon atmosphere. The superconducting properties, microstructures and the elements distribution of the joint regions had been investigated. The pressure and pressing times were optimized in order to enhance the transport current of the joints. At 4.2 K and 10 T, a transport critical current Ic of 57 A for the joint was obtained, which is approximately 63.3% of the current capacity of the tapes themselves. Furthermore, the joint resistances dV/dI were estimated from the V-I curve of the joints and the calculated joint resistances values are below 10^-9 Ohm. These results demonstrate that the hot pressing was useful for fabricating the superconducting joint samples.

cond-mat.supr-con↗

arXiv2017

Thermal Rectification in CVD Diamond Membranes Driven by Gradient Grain Structure

As one of the basic components of phononics, thermal diodes transmit heat current asymmetrically similar to electronic rectifiers and diodes in microelectronics. Heat can be conducted through them easily in one direction while being blocked in the other direction. In this work, we report an easily-fabricated mesoscale chemical vapor deposited (CVD) diamond thermal diode without sharp temperature change driven by the gradient grain structure of CVD diamond membranes. We build a spectral model of diamond thermal conductivity with complete phonon dispersion relation to show significant thermal rectification in CVD diamond membranes. To explain the observed thermal rectification, the temperature and thermal conductivity distribution in the CVD diamond membrane are studied. Additionally, the effects of temperature bias and diamond membrane thickness are discussed, which shed light on tuning the thermal rectification in CVD diamond membranes. The conical grain structure makes CVD diamond membranes, and potentially other CVD film structures with gradient grain structure, excellent candidates for easily-fabricated mesoscale thermal diodes without a sharp temperature change.

cond-mat.mes-hall↗

arXiv2017

Thermal boundary conductance across epitaxial ZnO/GaN interfaces: Assessment of phonon gas models and atomistic Green's function approaches for predicting interfacial phonon transport

We present experimental measurements of the thermal boundary conductance (TBC) from $77 - 500$ K across isolated heteroepitaxially grown ZnO films on GaN substrates. These data provide an assessment of the assumptions that drive the phonon gas model-based diffuse mismatch models (DMM) and atomistic Green's function (AGF) formalisms for predicting TBC. Our measurements, when compared to previous experimental data, suggest that the TBC can be influenced by long wavelength, zone center modes in a material on one side of the interface as opposed to the "vibrational mismatch" concept assumed in the DMM; this disagreement is pronounced at high temperatures. At room temperature, we measure the ZnO/GaN TBC as $490\lbrack +150, -110\rbrack$ MW m$^{-2}$ K$^{-1}$. The disagreement among the DMM and AGF and the experimental data these elevated temperatures suggests a non-negligible contribution from additional modes contributing to TBC that not accounted for in the fundamental assumptions of these harmonic formalisms, such as inelastic scattering. Given the high quality of these ZnO/GaN interface, these results provide an invaluable critical and quantitive assessment of the accuracy of assumptions in the current state of the art of computational approaches for predicting the phonon TBC across interfaces.

cond-mat.mtrl-sci↗

arXiv2017

Probing Growth-Induced Anisotropic Thermal Transport in CVD Diamond Membranes by Multi-frequency and Multi-spot-size Time-Domain Thermoreflectance

The maximum output power of GaN-based high-electron mobility transistors is limited by high channel temperature induced by localized self-heating which degrades device performance and reliability. With generated heat fluxes within these devices reaching magnitude close to ten times of that at the sun surface, chemical vapor deposition (CVD) diamond is an attractive candidate to aid in the extraction of this heat in order to keep the operating temperatures of these high power electronics as low as possible. Due to the observed inhomogeneous structure, CVD diamond membranes exhibit a 3D anisotropic thermal conductivity which may result in significantly different cooling performance from expected in a given application. In this work, time domain thermoreflectance (TDTR) is used to measure the thermal properties of an 11.8-μm CVD diamond membrane from its nucleation side. Starting with a spot size diameter larger than the thickness of the membrane, measurements are made at various modulation frequencies from 1.2 MHz to 11.6 MHz to tune the heat penetration depth, and subsequently the part of diamond sampled by TDTR. We divide the membrane into ten sublayers and assume isotropic thermal conductivity in each sublayer. From this, we observe a 2D gradient of the depth-dependent thermal conductivity for this membrane. By measuring the same region with a smaller spot size at multiple frequencies, the in-plane and cross-plane thermal conductivity are extracted respectively. Through this use of multiple spot sizes and modulation frequencies, the 3D anisotropic thermal conductivity of CVD diamond membrane is experimentally obtained by fitting the experimental data to a thermal model. This work provides insight toward an improved understanding of heat conduction inhomogeneity in CVD polycrystalline diamond membrane that is important for applications of thermal management of high power electronics.

cond-mat.mes-hall↗

arXiv2017

High transport current superconductivity in powder-in-tube Ba0.6K0.4Fe2As2 tapes at 27 tesla

The high upper critical field and low anisotropy of iron-based superconductors make them being particularly attractive for high-field applications. However, the current carrying capability needs to be enhanced by overcoming the weak-link effect between misaligned grains inside wire and tape conductors. Here we demonstrate a high transport critical current density (Jc) reaching 1.5x10^5 A/cm^2 (Ic = 437 A) at 4.2 K and 10 T in Ba0.6K0.4Fe2As2 (Ba-122) tapes prepared by a combination of conventional powder-in-tube method and optimized hot-press technique. The transport Jc measured at 4.2 K under high magnetic fields of 27 T is still on the level of 5.5x10^4 A/cm^2, which is much higher than those of low-temperature superconductors. This is the first report of hot-pressed Ba-122 superconducting tapes and these Jc values are by far the highest ever reported for iron-based superconducting wires and tapes. These high-performance tapes exhibit high degree of c-axis texture of Ba-122 grains and low anisotropy of transport Jc, showing great potential for construction of high-field superconducting magnets.

cond-mat.supr-con↗

arXiv2016

Strongly Anisotropic Thermal and Electrical Conductivities of Self-assembled Silver Nanowire Network

Heat dissipation issues are the emerging challenges in the field of flexible electronics. Thermal management of flexible electronics creates a demand for flexible materials with highly anisotropic thermal conductivity, which work as heat spreaders to remove excess heat in the in-plane direction and as heat shields to protect human skin or device components under them from heating. This study proposes a self-assembled silver nanowire network with high thermal and electrical anisotropy with the potential to solve these challenges. The in-plane thermal conductivity of the network along the axial direction of silver nanowires is measured as 37 W/m-K while the cross-plane thermal conductivity is only 0.36 W/m-K. The results of measurements of electrical and thermal conductivities suggest that abundant wire-wire contacts strongly impede thermal transport. The excellent alignment of nanowires results in the same anisotropy ratio of 3 for both thermal and electrical conduction in the two in-plane directions. The ratio remains unchanged as the temperature decrease to 50 K, which indicates that wire-wire contacts lower the thermal and electrical conduction in the two directions to the same extent and their effect is independent of temperature. In addition, phonon softening markedly reduces the Debye temperatures of the network, which are fitted from the electrical resistivity data. As a result of phonon thermal conduction, the Lorenz numbers of the film in the two directions, which are approximately the same, are larger than the Sommerfeld value at room temperature and decrease as temperature decreases because of small angle scattering and the reduced phonon contribution. This nanowire network provides a solution to the emerging challenges of thermal management of flexible electronics.

cond-mat.mes-hall↗

arXiv2015

Endogenous Current Coupons

We consider the problem of identifying current coupons for Agency backed To-be-Announced (TBA) Mortgage Backed Securities. In a doubly stochastic factor based model which allows for prepayment intensities to depend upon current and origination mortgage rates, as well as underlying investment factors, we identify the current coupon with solutions to a degenerate elliptic, non-linear fixed point problem. Using Schaefer's theorem we prove existence of current coupons. We also provide an explicit approximation to the fixed point, valid for compact perturbations off a baseline factor-based intensity model. Numerical examples are provided which show the approximation performs remarkably well in estimating the current coupon.

q-fin.PR↗

arXiv2014

Temperature dependence of electrical and thermal conduction in single silver nanowire

Silver nanowires have great application potential in fields like flexible electronic devices, solar cells and transparent electrodes. It is critical and fundamental to study the thermal and electrical transport properties in a single silver nanowire. In this work, the thermal and electrical transport in an individual silver nanowire is characterized down to 35 K with the steady state electro-thermal technique. The results indicate that, at room temperature, the electrical resistivity increases by around 4 folds compared from that of its bulk counterpart. After fitting the temperature dependent electrical resistivity curves with the Bloch-Grüneisen formula, the Debye temperature (151 K) of the silver nanowire is found 36% lower than that (235 K) of bulk silver, confirming strong phonon softening. The thermal conductivity is reduced by 55% compared with that of its bulk counterpart at room temperature and this reduction becomes larger as the temperature goes down. To explain the opposite trends of thermal conductivity (\k{appa}) ~ temperature (T) of silver nanowire and bulk silver, a unified thermal resistivity is used to elucidate the electron scattering mechanism. A large residual unified thermal resistivity for the silver nanowire is observed while that of the bulk silver is almost zero. The same trend of variation against T indicates that the silver nanowire and bulk silver share the same phonon-electron scattering mechanism. Additionally, due to phonon-assisted electron energy transfer across the grain boundaries, the Lorenz number of the silver nanowire is found much larger than that of bulk silver and decreases with decreasing temperature.

cond-mat.mes-hall↗

arXiv2014

Phonon Softening and Weak Temperature-dependent Lorenz Number for Bio-supported Ultra-thin Ir Film

This work reports on the first-time study of the temperature-dependent behavior of the Lorenz number of bio-supported average 3.2 nm-thin Ir film down to 10 K. Due to the strong imperfection-electron scattering, a very large residual resistivity is observed for the film that dominates the overall electron transport. The Debye temperature (221 K)of the film is found much smaller than that of bulk (308 K). This phonon softening strongly confirms the extensive surface and grain boundary electron scatterings. More than one order of magnitude reduction is observed for the thermal conductivity of the film. We find the Wiedemann-Franz Law still applies to our film even at low temperatures. The overall Lorenz number and that of imperfection structure are close to the Sommerfeld value and shows little temperature dependence. This is contrast to other studied low dimensional metallic structures that have a much larger Lorenz number. Electron tunneling and hopping in the biomaterial substrate are speculated responsible for the observed Lorenz number.

cond-mat.mes-hall↗

arXiv2014

Temperature Dependent Behavior of Thermal Conductivity of Sub-5 nm Ir film: Defect-electron Scattering Quantified by Residual Thermal Resistivity

By studying the temperature-dependent behavior of electron thermal conductivity (k) in a 3.2 nm-thin film, we quantify the extremely confined defect-electron scattering and reveal the intrinsic phonon-electron scattering that is shared by bulk Ir. At low temperatures below 50 K, the thermal conductivity of the thin film has almost two orders of magnitude reduction from that of the bulk Ir. The thermal conductivity of the film increases with increasing temperature while that of the bulk Ir has an opposite trend. We introduce a unified thermal resistivity to interpret this completely different k-T relation. This residual thermal resistivity provides an unprecedented way to quantitatively evaluating defect-electron scatterings in heat conduction. The interfacial thermal conductance across the grain boundaries is found larger than that of the Al/Cu interface. Its value is proportional to temperature largely because of the electron's specific heat. A unified interfacial thermal conductance is defined and firmly proves such relation. The electron reflection coefficient is found to be large (88%) and almost temperature independent. This means most of the electrons which scatter with the grain boundary would be reflected back and the scatterings are not affected by temperature.

cond-mat.mes-hall↗

arXiv2014

Thermophysical Properties of Lignocellulose: A Cell-scale Study down to 41K

Thermal energy transport is of great importance in lignocellulose pyrolysis for bio-fuels. The thermophysical properties of lignocellulose significantly affect the overall properties of bio-composites and the related thermal transport. In this work, cell-scale lignocellulose (mono-layer plant cells) is prepared to characterize their thermal properties from room temperature down to 41 K. The thermal conductivities of cell-scale lignocellulose along different directions show a little anisotropy due to the cell structure anisotropy. It is found that with temperature going down, the volumetric specific heat of the lignocellulose shows a slower decreasing trend against temperature than that of microcrystalline cellulose, and its value is always higher than that of microcrystalline cellulose. The thermal conductivity of lignocellulose decreases with temperature from 243 K to 317 K due to increasing phonon-phonon scatterings. From 41 K to 243 K, the thermal conductivity rises with temperature and its change mainly depends on the heat capacity's change.

physics.bio-ph↗