arXiv subjects

Zhe Ying

Publications and source records attributed to Zhe Ying.

5 recordsLinked to original sources

arXiv2025

Electrothermal manipulation of current-induced phase transitions in ferrimagnetic Mn$_3$Si$_2$Te$_6$

Phase transitions driven by external stimuli are central to condensed matter physics, providing critical insights into symmetry breaking and emergent phenomena. Recently, ferrimagnetic (FiM) Mn$_3$Si$_2$Te$_6$ has attracted considerable attention for its magnetic-field-induced insulator-metal transitions (IMTs) and unconventional current-driven phase transitions, yet the role of applied currents in the magnetic phase remains poorly understood. Here, by combining local magnetization probes and time-resolved transport measurements, we uncover an electrothermal origin for the current-induced first-order-like phase transitions, characterized by abrupt voltage jumps and distinct magnetic domain evolution. Current-voltage (I-V) characteristics measured under triangular waveforms exhibit strong non-reciprocal and hysteretic behaviors, which are significantly suppressed at frequencies ~1000 Hz. Time-resolved studies using rectangular pulsed currents demonstrate that the resistance dynamics closely mirror the equilibrium resistance-temperature profile, directly implicating Joule heating as the driving mechanism. Furthermore, we reveal that the intrinsic I-V response adheres to Ohm's law, displaying linearity across various magnetic fields and temperatures. Our work advocates for a cautious approach in distinguishing between genuine current-induced nonequilibrium quantum states and thermal effects.

cond-mat.mtrl-sci↗

arXiv2023

Observation of giant nonreciprocal charge transport from quantum Hall states in a topological insulator

Symmetry breaking in quantum materials is of great importance and can lead to nonreciprocal charge transport. Topological insulators provide a unique platform to study nonreciprocal charge transport due to their surface states, especially quantum Hall states under external magnetic field. Here, we report the observation of nonreciprocal charge transport mediated by quantum Hall states in devices composed of the intrinsic topological insulator Sn-Bi1.1Sb0.9Te2S, which is attributed to asymmetric scattering between quantum Hall states and Dirac surface states. A giant nonreciprocal coefficient of up to 2.26*10^5 A^-1 is found. Our work not only reveals the properties of nonreciprocal charge transport of quantum Hall states in topological insulators, but also paves the way for future electronic devices.

cond-mat.mes-hall↗

arXiv2022

Large Exchange Bias Effect and Coverage-Dependent Interfacial Coupling in CrI3/MnBi2Te4 van der Waals Heterostructures

Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI3/MnBi2Te4 ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostructure devices. The devices originally exhibit a negative exchange bias field, which decays with increasing temperature and is unaffected by the back-gate voltage. When we change the device configuration to be half-covered by CrI3, the exchange bias becomes positive with a very large exchange bias field exceeding 300 mT. Such sensitive manipulation is explained by the competition between the FM and AFM coupling at the interface of CrI3 and MnBi2Te4, pointing to coverage-dependent interfacial magnetic interactions. Our work will facilitate the development of topological and antiferromagnetic devices.

cond-mat.mtrl-sci↗

arXiv2021

Experimental evidence on the dissipationless transport of chiral edge state of the high-field Chern insulator in MnBi2Te4 nanodevices

We demonstrate the dissipationless transport of the chiral edge state (CES) in the nanodevices of quantum anomalous Hall insulator candidate MnBi2Te4. The device presents a near-zero longitudinal resistance together with a quantized Hall plateau in excess of 0.97 h/e2 over a range of temperatures from very low up to the Neel temperature of 22 K. Each of four-probe nonlocal measurements gives near-zero resistance and two-probe measurements exhibit a plateau of +1 h/e2, while the results of three-probe nonlocal measurements depend on the magnetic field. This indicates non-dissipation as well as the chirality of the edge state. The CES shows three regimes of temperature dependence, i.e., well-preserved dissipationless transport below 6 K, variable range hopping while increasing the temperature and thermal activation at higher than 22 K. Even at the lowest temperature, a current of over 1.4 μA breaks the dissipationless transport. These form a complete set of evidences of the Chern insulator state in the MnBi2Te4 systems.

cond-mat.mes-hall↗

arXiv2020

Reversible Engineering of Topological Insulator Surface State Conductivity through Optical Excitation

Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphene and various semiconductors have been explored for this purpose, while non-ideal interfaces often limit the performance. The topological insulator is a natural hybrid system, with the surface states hosting high-mobility Dirac fermions and the small-bandgap semiconducting bulk state strongly absorbing light. In this work, we show a large photocurrent response from a field effect transistor device based on intrinsic topological insulator Sn-Bi1.1Sb0.9Te2S. The photocurrent response is non-volatile and sensitively depends on the initial Fermi energy of the surface state, and it can be erased by controlling the gate voltage. Our observations can be explained with a remote photo-doping mechanism, in which the light excites the defects in the bulk and frees the localized carriers to the surface state. This photodoping modulates the surface state conductivity without compromising the mobility, and it also significantly modify the quantum Hall effect of the surface state. Our work thus illustrates a route to reversibly manipulate the surface states through optical excitation, shedding light into utilizing topological surface states for quantum optoelectronics.

cond-mat.mes-hall↗