arXiv subjects

Zhehao Ge

Publications and source records attributed to Zhehao Ge.

18 recordsLinked to original sources

arXiv2026

Individual Vanadium Dopants Form Deep In-Gap States in Monolayer WS2

Point defects in atomically thin materials have a strong impact on physical properties and those that induce in-gap states are advantageous for quantum information science and engineering (QISE). However, dopant engineering consisting of well-controlled synthesis and robust identification of in-gap states is challenging. In this work, we addressed this challenge by first using finely tuned chemical vapor deposition to incorporate vanadium dopants into a monolayer WS2 (V-WS2). Next, we utilized a suite of scanned probe microscopy techniques to identify and characterize individual dopants. The latter included conductive atomic force microscopy (cAFM), low temperature scanning tunneling microscopy and spectroscopy (STM/STS), and scanning transmission electron microscopy and unambiguously revealed that vanadium dopants form deep in-gap states 0.35 eV above the valence band maximum in V-WS2. Our experimental results are well supported by first principles calculations and taken together demonstrate that V-WS2 is a promising platform for QISE applications.

cond-mat.mtrl-sci↗

arXiv2025

Visualizing the Impact of Quenched Disorder on 2D Electron Wigner Solids

Electron Wigner solids (WSs)1-12 provide an ideal system for understanding the competing effects of electron-electron and electron-disorder interactions, a central unsolved problem in condensed matter physics. Progress in this topic has been limited by a lack of single-defect-resolved experimental measurements as well as accurate theoretical tools to enable realistic experiment/theory comparison. Here we overcome these limitations by combining atomically-resolved scanning tunneling microscopy (STM) with neural-quantum-state quantum Monte Carlo (NQS-QMC) simulation of disordered 2D electron WSs to discover new disorder-induced physical regimes of correlated electron behavior. STM was used to image the electron density ($n_e$) dependent evolution of electron WSs in gate-tunable bilayer MoSe2 devices with varying long-range ($n_\mathrm{LR}$) and short-range ($n_\mathrm{SR}$) disorder densities. These images were compared to NQS-QMC simulations using realistic disorder maps extracted from experiment, thus allowing the roles of different disorder types to be disentangled. We identify two distinct physical regimes for disordered electron WSs that depend on $n_\mathrm{SR}$. For $n_\mathrm{SR} \lesssim n_e$ the WS behavior is dominated by long-range disorder and features extensive mixed solid-liquid phases, a new type of local re-entrant melting/crystallization, and prominent Friedel oscillations. In contrast, when $n_\mathrm{SR} \gg n_e$ these features are suppressed and a more robust amorphous WS phase emerges that persists to higher ne, highlighting the importance of short-range disorder in this regime. Our work establishes a powerful framework for studying disordered quantum solids via a combined experimental-theoretical approach.

cond-mat.str-el↗

arXiv2024

Direct Visualization of Relativistic Quantum Scars

Quantum scars refer to eigenstates with enhanced probability density along unstable classical periodic orbits (POs). First predicted 40 years ago, scars are special eigenstates that counterintuitively defy ergodicity in quantum systems whose classical counterpart is chaotic. Despite the importance and long history of scars, their direct visualization in quantum systems remains an open field. Here we demonstrate that, by using an in-situ graphene quantum dot (GQD) creation and wavefunction mapping technique, quantum scars are imaged for Dirac electrons with nanometer spatial resolution and meV energy resolution with a scanning tunneling microscope. Specifically, we find enhanced probability densities in the form of lemniscate-shaped and streak-like patterns within our stadium-shaped GQDs. Both features show equal energy interval recurrence, consistent with predictions for relativistic quantum scars. By combining classical and quantum simulations, we demonstrate that the observed patterns correspond to two unstable POs that exist in our stadium-shaped GQD, thus proving they are both quantum scars. In addition to providing the first unequivocal visual evidence of quantum scarring, our work offers insight into the quantum-classical correspondence in relativistic chaotic quantum systems and paves the way to experimental investigation of other recently proposed scarring species such as perturbation-induced scars, chiral scars, and antiscarring.

cond-mat.mes-hall↗

arXiv2024

Imaging Tunable Luttinger Liquid Systems in van der Waals Heterostructures

One-dimensional (1D) interacting electrons are often described as a Luttinger liquid1-4 having properties that are intrinsically different from Fermi liquids in higher dimensions5,6. 1D electrons in materials systems exhibit exotic quantum phenomena that can be tuned by both intra- and inter-1D-chain electronic interactions, but their experimental characterization can be challenging. Here we demonstrate that layer-stacking domain walls (DWs) in van der Waals heterostructures form a broadly tunable Luttinger liquid system including both isolated and coupled arrays. We have imaged the evolution of DW Luttinger liquids under different interaction regimes tuned by electron density using a novel scanning tunneling microscopy (STM) technique. Single DWs at low carrier density are highly susceptible to Wigner crystallization consistent with a spin-incoherent Luttinger liquid, while at intermediate densities dimerized Wigner crystals form due to an enhanced magneto-elastic coupling. Periodic arrays of DWs exhibit an interplay between intra- and inter-chain interactions that gives rise to new quantum phases. At low electron densities inter-chain interactions are dominant and induce a 2D electron crystal composed of phased-locked 1D Wigner crystal in a staggered configuration. Increased electron density causes intra-chain fluctuation potentials to dominate, leading to an electronic smectic liquid crystal phase where electrons are ordered with algebraical correlation decay along the chain direction but disordered between chains. Our work shows that layer-stacking DWs in 2D heterostructures offers new opportunities to explore Luttinger liquid physics.

cond-mat.str-el↗

arXiv2024

Quantum Melting of a Disordered Wigner Solid

The behavior of two-dimensional electron gas (2DEG) in extreme coupling limits are reasonably well-understood, but our understanding of intermediate region remains limited. Strongly interacting electrons crystalize into a solid phase known as the Wigner crystal at very low densities, and these evolve to a Fermi liquid at high densities. At intermediate densities, however, where the Wigner crystal melts into a strongly correlated electron fluid that is poorly understood partly due to a lack of microscopic probes for delicate quantum phases. Here we report the first imaging of a disordered Wigner solid and its quantum densification and quantum melting behavior in a bilayer MoSe2 using a non-invasive scanning tunneling microscopy (STM) technique. We observe a Wigner solid with nanocrystalline domains pinned by local disorder at low hole densities. With slightly increasing electrostatic gate voltages, the holes are added quantum mechanically during the densification of the disordered Wigner solid. As the hole density is increased above a threshold (p ~ 5.7 * 10e12 (cm-2)), the Wigner solid is observed to melt locally and create a mixed phase where solid and liquid regions coexist. With increasing density, the liquid regions gradually expand and form an apparent percolation network. Local solid domains appear to be pinned and stabilized by local disorder over a range of densities. Our observations are consistent with a microemulsion picture of Wigner solid quantum melting where solid and liquid domains emerge spontaneously and solid domains are pinned by local disorder.

cond-mat.str-el↗

arXiv2022

Observation of Giant Orbital Magnetic Moments and Paramagnetic Shift in Artificial Relativistic Atoms and Molecules

Massless Dirac fermions have been observed in various materials such as graphene and topological insulators in recent years, thus offering a solid-state platform to study relativistic quantum phenomena. Single quantum dots (QDs) and coupled QDs formed with massless Dirac fermions can be viewed as artificial relativistic atoms and molecules, respectively. Such structures offer a unique platform to study atomic and molecular physics in the ultra-relativistic regime. Here, we use a scanning tunneling microscope to create and probe single and coupled electrostatically defined graphene QDs to unravel the unique magnetic field responses of artificial relativistic nanostructures. Giant orbital Zeeman splitting and orbital magnetic moment are observed in single graphene QDs. While for coupled graphene QDs, Aharonov Bohm oscillations and strong Van Vleck paramagnetic shift are observed. Such properties of artificial relativistic atoms and molecules can be leveraged for novel magnetic field sensing modalities.

cond-mat.mes-hall↗

arXiv2022

Imaging Quantum Interference in Stadium-Shaped Monolayer and Bilayer Graphene Quantum Dots

Experimental realization of graphene-based stadium-shaped quantum dots (QDs) have been few and incompatible with scanned probe microscopy. Yet, direct visualization of electronic states within these QDs is crucial for determining the existence of quantum chaos in these systems. We report the fabrication and characterization of electrostatically defined stadium-shaped QDs in heterostructure devices composed of monolayer graphene (MLG) and bilayer graphene (BLG). To realize a stadium-shaped QD, we utilized the tip of a scanning tunneling microscope to charge defects in a supporting hexagonal boron nitride flake. The stadium states visualized are consistent with tight-binding-based simulations, but lack clear quantum chaos signatures. The absence of quantum chaos features in MLG-based stadium QDs is attributed to the leaky nature of the confinement potential due to Klein tunneling. In contrast, for BLG-based stadium QDs (which have stronger confinement) quantum chaos is precluded by the smooth confinement potential which reduces interference and mixing between states.

cond-mat.mes-hall↗

arXiv2022

Denoising Scanning Tunneling Microscopy Images of Graphene with Supervised Machine Learning

Machine learning (ML) methods are extraordinarily successful at denoising photographic images. The application of such denoising methods to scientific images is, however, often complicated by the difficulty in experimentally obtaining a suitable expected result as an input to training the ML network. Here, we propose and demonstrate a simulation-based approach to address this challenge for denoising atomic-scale scanning tunneling microscopy (STM) images, which consists of training a convolutional neural network on STM images simulated based on a tight-binding electronic structure model. As model materials, we consider graphite and its mono- and few-layer counterpart, graphene. With the goal of applying it to any experimental STM image obtained on graphitic systems, the network was trained on a set of simulated images with varying characteristics such as tip height, sample bias, atomic-scale defects, and non-linear background. Denoising of both simulated and experimental images with this approach is compared to that of commonly-used filters, revealing a superior outcome of the ML method in the removal of noise as well as scanning artifacts - including on features not simulated in the training set. An extension to larger STM images is further discussed, along with intrinsic limitations arising from training set biases that discourage application to fundamentally unknown surface features. The approach demonstrated here provides an effective way to remove noise and artifacts from typical STM images, yielding the basis for further feature discernment and automated processing.

cond-mat.mtrl-sci↗

arXiv2022

Ultra-sharp lateral $p\text{-}n$ junctions in modulation-doped graphene

We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary between differentially-doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of $\alpha$-RuCl$_3$ across a thin insulating barrier. We extract the $p\text{-}n$ junction contribution to the device resistance to place bounds on the junction width. We achieve an ultra-sharp junction when the boundary between the intrinsic and doped regions is defined by a cleaved crystalline edge of $\alpha$-RuCl$_3$ located 2 nm from the graphene. Scanning tunneling spectroscopy in heterostructures of graphene, hexagonal boron nitride, and $\alpha$-RuCl$_3$ shows potential variations on a sub-10 nm length scale. First principles calculations reveal the charge-doping of graphene decays sharply over just nanometers from the edge of the $\alpha$-RuCl$_3$ flake.

cond-mat.mes-hall↗

arXiv2021

Surface states and quasiparticle interference in Bernal and rhombohedral graphite with and without trigonal warping

We use an exact analytical technique [Phys. Rev. B \textbf{101}, 115405 (2020), Phys. Rev. B \textbf{102}, 165117 (2020)] to recover the surface Green's functions for Bernal (ABA) and rhombohedral (ABC) graphite. For rhombohedral graphite we recover the predicted surface flat bands. For Bernal graphite we find that the surface state spectral function is similar to the bilayer one, but the trigonal warping effects are enhanced, and the surface quasiparticles have a much shorter lifetime. We subsequently use the T-matrix formalism to study the quasiparticle interference patterns generated on the surface of semi-infinite ABA and ABC graphite in the presence of impurity scattering. We compare our predictions to experimental STM data of impurity-localized states on the surface of Bernal graphite which appear to be in a good agreement with our calculations.

cond-mat.mes-hall↗

arXiv2021

Quasiparticle interference patterns in bilayer graphene with trigonal warping

We calculate the form of quasiparticle interference patterns in bilayer graphene within a low-energy description, taking into account perturbatively the trigonal warping terms. We introduce four different types of impurities localized on the A and B sublattices of the first and the second layer, and we obtain closed-form analytical expressions both in real and Fourier spaces for the oscillatory corrections to the local density of states generated by the impurities. Finally, we compare our findings with recent experimental and semi-analytical T-matrix results from arXiv:2104.10620 and we show that there is a very good agreement between our findings and the previous results, as well as with the experimental data.

cond-mat.mes-hall↗

arXiv2021

Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene

The properties of semiconductors can be crucially impacted by midgap states induced by dopants, which can be native or intentionally incorporated in the crystal lattice. For Bernal-stacked bilayer graphene (BLG), which has a tunable bandgap, the existence of midgap states induced by dopants has been conjectured, but never confirmed experimentally. Here, we report scanning tunneling microscopy and spectroscopy results, supported by tight-binding calculations, that demonstrate the existence of midgap states in BLG. We show that the midgap state in BLG -- for which we demonstrate gate-tunability -- appears when the dopant is hosted on the non-dimer sublattice sites. We further evidence the presence of narrow resonances at the onset of the high energy bands (valence or conduction, depending on the dopant type) when the dopants lie on the dimer sublattice sites. These results suggest that dopants/defects can play an important role in the transport and optical properties of multilayer graphene samples, especially at energies close to the band extrema.

cond-mat.mes-hall↗

arXiv2021

Direct Visualization of Native Defects in Graphite and Their Effect on the Electronic Properties of Bernal-Stacked Bilayer Graphene

Graphite crystals used to prepare graphene-based heterostructures are generally assumed to be defect free. We report here scanning tunneling microscopy results that show graphite commonly used to prepare graphene devices can contain a significant amount of native defects. Extensive scanning of the surface allows us to determine the concentration of native defects to be 6.6$\times$10$^8$ cm$^{-2}$. We further study the effects of these native defects on the electronic properties of Bernal-stacked bilayer graphene. We observe gate-dependent intravalley scattering and successfully compare our experimental results to T-matrix-based calculations, revealing a clear carrier density dependence in the distribution of the scattering vectors. We also present a technique for evaluating the spatial distribution of short-scale scattering. A theoretical analysis based on the Boltzmann transport equation predicts that the dilute native defects identified here are an important extrinsic source of scattering, ultimately setting the mobility at low temperatures.

cond-mat.mes-hall↗

arXiv2021

Control of Giant Topological Magnetic Moment and Valley Splitting in Trilayer Graphene

Bloch states of electrons in honeycomb two-dimensional crystals with multi-valley band structure and broken inversion symmetry have orbital magnetic moments of a topological nature. In crystals with two degenerate valleys, a perpendicular magnetic field lifts the valley degeneracy via a Zeeman effect due to these magnetic moments, leading to magnetoelectric effects which can be leveraged for creating valleytronic devices. In this work, we demonstrate that trilayer graphene with Bernal stacking, (ABA TLG) hosts topological magnetic moments with a large and widely tunable valley g-factor, reaching a value 1050 at the extreme of the studied parametric range. The reported experiment consists in sublattice-resolved scanning tunneling spectroscopy under perpendicular electric and magnetic fields that control the TLG bands. The tunneling spectra agree very well with the results of theoretical modeling that includes the full details of the TLG tight-binding model and accounts for a quantum-dot-like potential profile formed electrostatically under the scanning tunneling microscope tip.

cond-mat.mes-hall↗

arXiv2020

Visualization and Manipulation of Bilayer Graphene Quantum Dots with Broken Rotational Symmetry and Nontrivial Topology

Electrostatically defined quantum dots (QDs) in Bernal stacked bilayer graphene (BLG) are a promising quantum information platform because of their long spin decoherence times, high sample quality, and tunability. Importantly, the shape of QD states determines the electron energy spectrum, the interactions between electrons, and the coupling of electrons to their environment, all of which are relevant for quantum information processing. Despite its importance, the shape of BLG QD states remains experimentally unexamined. Here we report direct visualization of BLG QD states by using a scanning tunneling microscope. Strikingly, we find these states exhibit a robust broken rotational symmetry. By using a numerical tight-binding model, we determine that the observed broken rotational symmetry can be attributed to low energy anisotropic bands. We then compare confined holes and electrons and demonstrate the influence of BLG's nontrivial band topology. Our study distinguishes BLG QDs from prior QD platforms with trivial band topology.

cond-mat.mes-hall↗

arXiv2019

Determination of the trigonal warping orientation in Bernal-stacked bilayer graphene via scanning tunneling microscopy

The existence of strong trigonal warping around the K point for the low energy electronic states in multilayer (N$\geq$2) graphene films and graphite is well established. It is responsible for phenomena such as Lifshitz transitions and anisotropic ballistic transport. The absolute orientation of the trigonal warping with respect to the center of the Brillouin zone is however not agreed upon. Here, we use quasiparticle scattering experiments on a gated bilayer graphene/hexagonal boron nitride heterostructure to settle this disagreement. We compare Fourier transforms of scattering interference maps acquired at various energies away from the charge neutrality point with tight-binding-based joint density of states simulations. This comparison enables unambiguous determination of the trigonal warping orientation for bilayer graphene low energy states. Our experimental technique is promising for quasi-directly studying fine features of the band structure of gated two-dimensional materials such as topological transitions, interlayer hybridization, and moir\'e minibands.

cond-mat.mes-hall↗

arXiv2019

Probing the Electronic Structure of Graphene Near and Far from the Fermi Level via Planar Tunneling Spectroscopy

Scanning tunneling spectroscopy (STS) has yielded significant insight on the electronic structure of graphene and other two-dimensional (2D) materials. STS directly measures a fundamental and directly calculable quantity: the single particle density of states (SPDOS). Due to experimental setup limitations, however, STS has been unable to explore 2D materials in ultra-high magnetic fields where electron-electron interactions can drastically change the SPDOS. Recent developments in the assembly of heterostructures composed of graphene and hexagonal boron nitride have enabled a device-based alternative to potentially overcome these roadblocks. Thus far, however, these nascent efforts are incomplete in analyzing and understanding tunneling spectra and have yet to explore graphene at high magnetic fields. Here we report an experiment at magnetic fields up to 18 T that uses graphene tunneling field effect transistors (TFETs) to establish a clear benchmark for measurement and analysis of graphene planar tunneling spectroscopy. We acquire gate tunable tunneling spectra of graphene and then use these data and electrostatic arguments to develop a systematic analysis scheme. This analysis reveals that TFET devices directly probe electronic structure features near and far from the Fermi level. In particular, our study yields identification of the Dirac point and numerous Landau levels as they fill and empty with charge via application of a gate voltage. Our work demonstrates that TFET devices are a viable platform for directly probing the electronic structure of graphene and other 2D materials in high magnetic fields, where novel electronic states emerge.

cond-mat.mes-hall↗

arXiv2019

Visualizing the Effect of an Electrostatic Gate with Angle-Resolved Photoemission Spectroscopy

Electrostatic gating is pervasive in materials science, yet its effects on the electronic band structure of materials has never been revealed directly by angle-resolved photoemission spectroscopy (ARPES), the technique of choice to non-invasively probe the electronic band structure of a material. By means of a state-of-the-art ARPES setup with sub-micron spatial resolution, we have investigated a heterostructure composed of Bernal-stacked bilayer graphene (BLG) on hexagonal boron nitride and deposited on a graphite flake. By voltage biasing the latter, the electric field effect is directly visualized on the valence band as well as on the carbon 1s core level of BLG. The band gap opening of BLG submitted to a transverse electric field is discussed and the importance of intralayer screening is put forward. Our results pave the way for new studies that will use momentum-resolved electronic structure information to gain insight on the physics of materials submitted to the electric field effect.

cond-mat.mtrl-sci↗