arXiv subjects

Zhen Tong

Publications and source records attributed to Zhen Tong.

15 recordsLinked to original sources

arXiv2025

Over One Order of Magnitude Enhancement in Hole Mobility of 2D III-V Semiconductors through Valence Band Edge Shift

Two-dimensional (2D) semiconductors show great potential to sustain Moore's law in the era of ultra-scaled electronics. However, their scalable applications are severely constrained by low hole mobility. In this work, we take 2D-GaAs as a prototype of III-V semiconductors to investigate the effects of quantum anharmonicity (QA) on hole transport, employing the stochastic self-consistent harmonic approximation assisted by the machine learning potential. It is found that the room-temperature hole mobility of 2D-GaAs is reduced by $\sim$44% as the QA effects are incorporated, which is attributed to the enhanced electron-phonon scattering from the out-of-plane acoustic polarization. The valence band edge shift (VBES) strategy is proposed to increase the hole mobility by $\sim$1600% at room temperature, which can be realized by 1% biaxial compressive strain. The electron-phonon scattering rate is dramatically decreased due to the full filtering of the original interband electron-phonon scattering channels that existed in the flat hole pocket. The VBES strategy can be further extended to other 2D III-V semiconductors to promote their hole mobilities.

cond-mat.mtrl-sci↗

arXiv2024

Unlocking high hole mobility in diamond over a wide temperature range via efficient shear strain

As a wide bandgap semiconductor, diamond holds both excellent electrical and thermal properties, making it highly promising in the electrical industry. However, its hole mobility is relatively low and dramatically decreases with increasing temperature, which severely limits further applications. Herein, we proposed that the hole mobility can be efficiently enhanced via slight compressive shear strain along the [100] direction, while the improvement via shear strain along the [111] direction is marginal. This impressive distinction is attributed to the deformation potential and the elastic compliance matrix. The shear strain breaks the symmetry of the crystalline structure and lifts the band degeneracy near the valence band edge, resulting in a significant suppression of interband electron-phonon scattering. Moreover, the hole mobility becomes less temperature-dependent due to the decrease of electron scatterings from high-frequency acoustic phonons. Remarkably, the in-plane hole mobility of diamond is increased by approximately 800% at 800 K with a 2% compressive shear strain along the [100] direction. The efficient shear strain strategy can be further extended to other semiconductors with face-centered cubic geometry.

cond-mat.mtrl-sci↗

arXiv2024

Giant enhancement of hole mobility for 4H-silicon carbide through suppressing interband electron-phonon scattering

4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mobility. Herein, we found that the hole mobility of 4H-SiC is mainly limited by the strong interband electron-phonon scattering using mode-level first-principles calculations. Our research indicates that applying compressive strain can reverse the sign of crystal-field splitting and change the ordering of electron bands close to the valence band maximum. Therefore, the interband electron-phonon scattering is severely suppressed, and the out-of-plane hole mobility of 4H-SiC can be enhanced by 200% with 2% uniaxial compressive strain applied. This work provides new insights into the electron transport mechanisms in semiconductors and suggests a strategy to improve hole mobility that could be applied to other semiconductors with hexagonal crystalline geometries.

cond-mat.mtrl-sci↗

arXiv2024

Diverse Responses in Lattice Thermal Conductivity of $n$-type/$p$-type Semiconductors Driven by Asymmetric Electron-Phonon Interactions

Accurately assessing the impact of electron-phonon interaction (EPI) on the lattice thermal conductivity of semiconductors is crucial for the thermal management of electronic devices and a unified physical understanding of this issue is highly desired. In this work, we predict the lattice thermal conductivities of typical direct and indirect bandgap semiconductors accounting for EPI based on mode-level first-principles calculations. It is found that EPI has a larger effect on the lattice thermal conductivity of $p$-type doping compared to $n$-type doping in the same semiconductor at high charge carrier concentrations. The stronger EPI in $p$-type doping is attributed to the relatively higher electron density of states caused by the relatively larger $p$-orbital component. Furthermore, EPI has a stronger influence on the lattice thermal conductivity of $n$-type indirect bandgap semiconductors than $n$-type direct bandgap semiconductors. This is attributed to the relatively lower electron density of states in direct bandgap semiconductors stemming from the $s$-orbital component. This work reveals that there exist diverse responses in lattice thermal conductivity of $n$-type/$p$-type semiconductors, which can be attributed to asymmetric EPIs.

cond-mat.mtrl-sci↗

arXiv2024

Weak effects of electron-phonon interactions on the lattice thermal conductivity of wurtzite GaN with high electron concentrations

Wurtzite gallium nitride (GaN) has great potential for high-frequency and high-power applications due to its excellent electrical and thermal transport properties. However, enhancing the performance of GaN-based power electronics relies on heavy doping. Previous studies showed that electron-phonon interactions have strong effects on the lattice thermal conductivity of GaN due to the Fröhlich interaction. Surprisingly, our investigation reveals weak effects of electron-phonon interactions on the lattice thermal conductivity of n-type GaN at ultra-high electron concentrations and the impact of the Fröhlich interaction can be ignored. The small phonon-electron scattering rate is attributed to the limited scattering channels, quantified by the Fermi surface nesting function. In contrast, there is a significant reduction in the lattice thermal conductivity of p-type GaN at high hole concentrations due to the relatively larger Fermi surface nesting function. Meanwhile, as p-type GaN has relatively smaller electron-phonon matrix elements, the reduction in lattice thermal conductivity is still weaker than that observed in p-type silicon. Our work provides a deep understanding of thermal transport in doped GaN and the conclusions can be further extended to other wide-bandgap semiconductors, including $β$-Ga2O3, AlN, and ZnO.

cond-mat.mtrl-sci↗

arXiv2021

Phononic thermal transport along graphene grain boundaries

We reveal that phononic thermal transport in graphene is not immune to grain boundaries (GBs) aligned along the direction of the temperature gradient. Non-equilibrium molecular dynamics simulations uncover a large reduction in the phononic thermal conductivity ($κ_p$) along linear ultra-narrow GBs comprising periodically-repeating pentagon-heptagon dislocations. Green's function calculations and spectral energy density analysis indicate that $κ_p$ is the complex manifestation of the periodic strain field, which behaves as a reflective diffraction grating with both diffuse and specular phonon reflections, and represents a source of anharmonic phonon-phonon scattering. Our findings provide new insights into the integrity of the phononic thermal transport in GB graphene.

cond-mat.mes-hall↗

arXiv2021

Ultralow thermal conductivity in two-dimensional MoO$_3$

Monolayer molybdenum trioxide (MoO$_3$) is an emerging two-dimensional (2D) material with high electrical conductivity. Using first-principles calculations and a Boltzmann transport theoretical framework, we predict record low room-temperature phonon thermal conductivity ($κ_p$) of 1.57 W/mK and 1.26 W/mK along the principal in-plane directions of MoO$_3$ monolayer. The behavior is attributed to the combination of soft flexural and in-plane acoustic modes, which are coupled through the finite layer thickness, and to the strong bonding anharmonicity, which gives rise to significant 3- and 4-phonon scattering events. These insights suggest new indicators for guiding the search of 2D materials with low $κ_p$. Our result motivates experimental $κ_p$ measurements in MoO$_3$, and its applications as a thermoelectric and thermally protective material.

cond-mat.mtrl-sci↗

arXiv2021

Atomistic metrics of BaSO$_4$ as an ultra-efficient radiative cooling material: a first-principles prediction

Radiative cooling has recently revived due to its significant potential as an environmentally friendly cooling technology. However, the design of particle-matrix cooling nanocomposites was generally carried out via tedious trial-and-error approaches, and the atomistic physics for efficient radiative cooling was not well understood. In this work, we identify the atomistic metrics of Barium Sulfate (BaSO$_4$) nanocomposite, which is an ultra-efficient radiative cooling material, using a predictive first-principles approach coupled with Monte Carlo simulations. Our results show that BaSO$_4$-acrylic nanocomposites not only attain high total solar reflectance of 92.5% (0.28 - 4.0 um), but also simultaneously demonstrate high normal emittance of 96.0% in the sky window region (8 - 13 um), outperforming the commonly used $α$-quartz ($α$-SiO$_2$). We identify two pertinent characters of ultra-efficient radiative cooling paints: i) a balanced band gap and refractive index, which enables strong scattering while negating absorption in the solar spectrum, and ii) a sufficient number of infrared-active optical resonance phonon modes resulting in abundant Reststrahlen bands and high emissivity in the sky window. The first principles approach and the resulted physical insights in this work pave the way for further search of ultra-efficient radiative cooling materials.

cond-mat.mtrl-sci↗

arXiv2020

Anomalous thermal transport in metallic transition-metal nitrides originated from strong electron-phonon interactions

Metallic transition-metal nitrides (TMNs) are promising conductive ceramics for many applications, whose thermal transport is of great importance in device design. It is found metallic TiN and HfN hold anomalous thermal transport behaviors compared to common metals and nonmetallic TMNs. They have extremely large intrinsic phonon thermal conductivity mainly due to the large acoustic-optic phonon frequency gaps. The phonon thermal conductivity is reduced by two orders of magnitude as the phonon-isotope and phonon-electron scatterings are considered, which also induce the nontrivial temperature-independent behavior of phonon thermal conductivity. Nesting Fermi surfaces exist in both TiN and HfN, which cause the strong electron-phonon coupling strengths and heavily harm the transport of phonons and electrons. The phonon component takes an abnormally large ratio in total thermal conductivity, as 29% for TiN and 26% for HfN at 300 K. The results for thin films are also presented and it is shown that the phonon thermal conductivity can be efficiently limited by size. Our findings provide a deep understanding on the thermal transport in metallic TMNs and expand the scope of heat conduction theory in metal.

cond-mat.mtrl-sci↗

arXiv2020

Thermal conductivity and Lorenz ratio of metals at intermediate temperature: a first-principles analysis

Electronic and phononic thermal conductivity are involved in the thermal conduction for metals and Wiedemann-Franz law is usually employed to predict them separately. However, Wiedemann-Franz law is shown to be invalid at intermediate temperatures. Here, to obtain the accurate thermal conductivity and Lorenz ratio for metals, the momentum relaxation time is used for electrical conductivity and energy relaxation time for electronic thermal conductivity. The mode-level first-principles calculation is conducted on two representative metals copper and aluminum. It is shown that the method can correctly predict electrical transport coefficients from 6 to 300 K. Also, the anomalous Lorenz ratio is observed within the present scheme, which has significant departure from the Sommerfeld value. The calculation scheme can be expanded to other metallic systems and is valuable in a better understanding of the electron dynamics and transport properties of metals.

physics.app-ph↗

arXiv2019

The use of strain and grain boundaries to tailor phonon transport properties: A first principles study of 2H-phase $CuAlO_{2}$ (Part II)

Transparent oxide materials, such as $CuAlO_{2}$, a p-type transparent conducting oxide (TCO), have recently been studied for high temperature thermoelectric power generators and coolers for waste heat. TCO materials are generally low cost and non-toxic. The potential to engineer them through strain and nano-structuring are two promising avenues toward continuously tuning the electronic and thermal properties to achieve high zT values and low cost/kW-hr devices. In this work, the strain-dependent lattice thermal conductivity of 2H $CuAlO_{2}$ is computed by solving the phonon Boltzmann transport equation with interatomic force constants extracted from first-principles calculations. While the average bulk thermal conductivity is around 32 W/(K-m) at room temperature, it drops to between 5-15 W/(K-m) for typical experimental grain sizes from 3nm to 30nm at room temperature. We find that strain can offer both an increase as well as a decrease in the thermal conductivity as expected, however the overall inclusion of small grain sizes dictates the potential for low thermal conductivity in this material.

cond-mat.mtrl-sci↗

arXiv2019

A comprehensive first-principles analysis of phonon thermal conductivity and electron-phonon coupling in different metals

Separating electron and phonon thermal conductivity components is imperative for understanding the principle thermal transport mechanisms in metals and highly desirable in many applications. In this work, we predict the mode-dependent electron and phonon thermal conductivities of 18 different metals at room-temperature from first-principles. Our first-principles predictions, in general, agree well with experimental data. We find that the phonon thermal conductivity is in the range of 2 - 18 $W/mK$, which accounts for 1% - 40% of the total thermal conductivity. It is also found that the phonon thermal conductivities in transition metals and transition-intermetallic-compounds (TICs) are non-negligible compared to noble metals due to their high phonon group velocities. Besides, the electron-phonon coupling effect on phonon thermal conductivity in transition metals and intermetallic compounds is stronger than that of nobles, which is attributed to the larger electron-phonon coupling constant with a high electron density of state within Fermi window and high phonon frequency. The noble metals have higher electron thermal conductivities compared to transition metals and TICs, which is mainly due to the weak electron-phonon coupling in noble metals. It is also shown that the Lorenz ratios of transition metals and transition-intermetallic-compounds hold larger deviations from the Sommerfeld value $L_0=2.44 \times 10^{-8} W ΩK^{-2}$. We also find the mean free paths (MFPs) for phonon (within 10 nm) are smaller than those of electron (5 - 25 nm). The electrical conductivity and electron thermal conductivity are strongly related to the MFPs of the electron.

cond-mat.mtrl-sci↗

arXiv2019

The lattice and electronic thermal conductivity of doped SnSe: a first-principles study

Recently, it has been found that crystalline tin selenide (SnSe) holds great potential as a thermoelectric material due to its ultralow thermal conductivity and moderate electronic transport performance. As thermoelectric application usually requires doped material, charge carriers can play a role in the thermal transport in doped SnSe, but such an effect has not been clearly elucidated in previous theoretical and experimental studies. Here we performed a fully first-principles study on the effects of electrons to the thermal transport in doped SnSe. The electron-phonon coupling (EPC) effects on both phonons and charge carriers were considered using the mode specific calculation in our work. It is found that for phonons, EPC are weak compared to the intrinsic phonon-phonon scattering even at high carrier concentrations and thus have negligible effects on the lattice thermal conductivity. The electronic thermal conductivity is not negligible when the carrier concentration is higher than $10^{19} cm^{-3}$ and the values can be as high as 1.55, 1.45 and 1.77 $Wm^{-1}K^{-1}$ on a, b and c axes, respectively, for $10^{20} cm^{-3}$ electron concentration at 300K. The Lorenz number of SnSe is also calculated and it is dependent on crystal orientations, carrier concentrations, and carrier types. The simple estimation of electronic thermal conductivity using Wiedemann-Franz law can cause large uncertainties for doped SnSe.

physics.app-ph↗

arXiv2015

Throughput Analysis for Full-Duplex Wireless Networks with Imperfect Self-interference Cancellation

This paper investigates the throughput for wireless network with full-duplex radios using stochastic geometry. Full-duplex (FD) radios can exchange data simultaneously with each other. On the other hand, the downside of FD transmission is that it will inevitably cause extra interference to the network compared to half-duplex (HD) transmission. Moreover, the residual self-interference has negative effects on the network throughput. In this paper, we focus on a wireless network of nodes with both HD and FD capabilities and derive and optimize the throughput in such a network. Our analytical result shows that if the network is adapting an ALOHA protocol, the maximal throughput is achieved by scheduling all concurrently transmitting nodes to work in either FD mode or HD mode depending on one simple condition. Moreover, the effects of imperfect self-interference cancellation on the signal-to-interference ratio (SIR) loss and throughput are also analyzed based on our mathematical model. We rigorously quantify the impact of imperfect self-interference cancellation on the throughput gain, transmission range, and other metrics, and we establish the minimum amount of self-interference suppression needed for FD to be beneficial.

cs.IT↗

arXiv2014

Throughput Analysis for Wireless Networks with Full-Duplex Radios

This paper investigates the throughput for wireless network with full-duplex radios using stochastic geometry. Full-duplex (FD) radios can exchange data simultaneously with each other. On the other hand, the downside of FD transmission is that it will inevitably cause extra interference to the network compared to half-duplex (HD) transmission. In this paper, we focus on a wireless network of nodes with both HD and FD capabilities and derive and optimize the throughput in such a network. Our analytical result shows that if the network is adapting an ALOHA protocol, the maximal throughput is always achieved by scheduling all concurrently transmitting nodes to work in FD mode instead of a mixed FD/HD mode or HD mode regardless of the network configurations. Moreover, the throughput gain of using FD transmission over HD transmission is analytically lower and upper bounded.

cs.IT↗