arXiv subjects

Zhen-Bing Tan

Publications and source records attributed to Zhen-Bing Tan.

3 recordsLinked to original sources

arXiv2025

Radio-Frequency Quantum Rectification in Kagome Superconductor CsV3Sb5

Rectification of electromagnetic fields into direct current (DC) is pivotal for energy harvesting, wireless charging, and next-generation communication technologies. The superconducting diode effect, which exploits the nonreciprocal transport of dissipationless superconducting currents, offers ultra-low power consumption and high rectification ratios. Combining the superconducting diode effect with the AC Josephson effect holds promise for converting radio-frequency (rf) irradiation into a quantized DC output. However, experimental realization has been hindered by challenges in achieving the necessary symmetry breaking and fabricating high-performance Josephson junctions. Here we demonstrate the quantum rectification in kagome superconductor CsV3Sb5, which hosts emergent Josephson effects and a zero-field Josephson diode. Under rf irradiation, a DC voltage emerges without applied bias, scaling linearly with frequency as V = hf/2e, where h is Planck's constant, f is the microwave frequency, and e is the electron charge. Furthermore, the rectified voltage exhibits quantized steps with increasing rf power, consistent with Shapiro step quantization. Our work establishes CsV3Sb5 as a versatile platform for wireless quantum power supplies and charging, and underscores the intertwined order parameters as a promising pathway for precise quantum matter control.

cond-mat.supr-con↗

arXiv2023

Superconducting Diode Effect and Large Magnetochiral Anisotropy in T$_d$-MoTe$_2$ Thin Film

In the absence of time-reversal invariance, metals without inversion symmetry may exhibit nonreciprocal charge transport -- a magnetochiral anisotropy that manifests as unequal electrical resistance for opposite current flow directions. If superconductivity also sets in, the charge transmission may become dissipationless in one direction while remaining dissipative in the opposite, thereby realizing a superconducting diode. Through both direct-current and alternating-current measurements, we study the nonreciprocal effects in thin films of the noncentrosymmetric superconductor T$_d$-MoTe\textsubscript{2} with disorders. We observe nonreciprocal superconducting critical currents with a diode efficiency close to 20\%~, and a large magnetochiral anisotropy coefficient up to $\SI{5.9e8}{\per\tesla\per\ampere}$, under weak out-of-plane magnetic field in the millitesla range. The great enhancement of rectification efficiency under out-of-plane magnetic field is likely abscribed to the vortex ratchet effect, which naturally appears in the noncentrosymmetric superconductor with disorders. Intriguingly, unlike the finding in Rashba systems, the strongest in-plane nonreciprocal effect does not occur when the field is perpendicular to the current flow direction. We develop a phenomenological theory to demonstrate that this peculiar behavior can be attributed to the asymmetric structure of spin-orbit coupling in T$_d$-MoTe\textsubscript{2}. Our study highlights how the crystallographic symmetry critically impacts the nonreciprocal transport, and would further advance the research for designing the superconducting diode with the best performance.

cond-mat.supr-con↗

arXiv2022

Proximity-induced superconducting gap in the intrinsic magnetic topological insulator MnBi2Te4

We report magnetotransport measurements in the NbN/ magnetic topological insulator MnBi2Te4 (MBT)/ NbN junction at low temperature. At 10 mK, the nonlinear current-voltage characteristic of the junction shows a tunneling behavior, indicating the existence of interfacial potential barriers within the heterostructure. Under an out of plane perpendicular magnetic field, a transition from negative to positive magnetoresistance (MR) is found when increasing the bias voltage. A proximity-induced superconducting gap is estimated to be 0.1meV by a pair of differential resistance dips. Moreover, the induced gap is enhanced by gradually tuning the Fermi level toward the charge neutral point by a back gate voltage, which is ascribed to the increased transport contribution of the topological surface states in MBT. Intriguingly, the induced gap exhibits an anomalous magnetic field assisted enhancement, which may originate from the spin orbit coupling and magnetic order of MBT. Our results reveal the interplay between magnetism and superconductivity in MBT, paving the way for further studies on topological superconductivity and chiral Majorana edge modes in quantum anomalous Hall insulator/superconductor hybrid systems.

cond-mat.mtrl-sci↗