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Zhen-Ze Li

Publications and source records attributed to Zhen-Ze Li.

2 recordsLinked to original sources

Mie-lithography: self-guiding nonlinear laser printing for deep ultraviolet to near-infrared nano dispersion devices

Nanoscale control of optical dispersion is essential for applications ranging from miniaturized spectrometers to color printing, all of which demand broadband spectral tunability. However, the Kramers-Kronig relations impose a fundamental trade-off between dispersion and loss, strictly limiting the design ability of single-material devices across the deep ultraviolet (DUV) to near-infrared (NIR) regimes. Consequently, the fabrication of miniaturized dispersion devices heavily relies on costly nanofabrication or heterogeneous integration. Here we overcome these limitations by shifting the light-matter interaction from solid structure into air-filled voids. We introduce a fabrication strategy termed "Mie-lithography", in which laser printed seed nanocavities excite Mie resonances in air and the resulting localized field enhancement drives the self-assembly of three-dimensionally tunable void-type optical resonators. Because the resonant modes are primarily confined within air voids, this architecture effectively circumvents material-imposed dispersion-loss constraints, allowing on-demand customization of the broadband spectral response. This approach enables single-step, high-throughput (>= 10^6 pixels/s) printing of dispersion units with a resolution of 63,500 DPI. As a proof of concept, we demonstrate a DUV-NIR nano spectrometer integrated in a single material covering an unprecedented range from 200 nm to 800 nm. Our approach can be extended into a platform for ultra-broadband nano devices fabrication and design, opening avenues for high-pixel-density displays and miniaturized spectrometers.

physics.optics

Super stealth dicing of transparent solids with nanometric precision

Laser cutting of semiconductor wafers and transparent dielectrics has become a dominant process in manufacturing industries, encompassing a wide range of applications from flat display panels to microelectronic chips. Limited by the diffraction barrier imposed on the beam width and its longitudinal extend of laser focus, a trade-off must be made between cutting accuracy and aspect ratio in conventional laser processing, with accuracy typically approaching a micron and the aspect ratio on the order of $10^2$. Herein, we propose a method to circumvent this limitation. It is based on the laser modification induced by a back-scattering interference crawling mechanism, which creates a positive feedback for homogenizing longitudinal energy deposition and lateral sub-wavelength light confinement during laser-matter interaction. Consequently, cutting width on the scale of tens of nanometers and aspect ratio $10^3 \sim 10^4$ were simultaneously achieved. We refer to this technique as ``super stealth dicing'', which is validated through numerical simulations, ensuring its broad applicability. It can be applied to various transparent functional solids, such as glass, laser crystal, ferroelectric, and semiconductor, and is elevating the precision of future advanced laser dicing, patterning, and drilling into the nanometric era.

physics.optics