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Zheng Liu

Publications and source records attributed to Zheng Liu.

At least 397 records · Page 22Linked to original sources

Tunable spin states in two-dimensional magnet CrI3

The recent discovery of ferromagnetic single-layer CrI3 creates ample opportunities for studying fundamental properties of atomically-thin magnets. By using first-principles calculations and model analysis, we show that a lateral strain and/or charge doping can have unexpected effects on the magnetic properties of CrI3. In particular, strain tunes the magnetic order and anisotropy: (1) a compressive strain leads to a phase transition from a ferromagnetic insulator to an antiferromagnetic insulator, while (2) a tensile strain can flip the magnetic orientation from off-plane to in-plane. Interestingly, we find that the phase boundary for the first transition is insensitive to charge doping, whereas that of the second one can be significantly modulated by electron doping.

cond-mat.mes-hall↗

Electronic and spin dynamics in the insulating iron pnictide NaFe$_{0.5}$Cu$_{0.5}$As

NaFe$_{0.5}$Cu$_{0.5}$As represents a rare exception in the metallic iron pnictide family, in which a small insulating gap is opened. Based on first-principles study, we provide a comprehensive theoretical characterization of this insulating compound. The Fe$^{3+} $spin degree of freedom is quantified as a quasi-1D $S=\frac{5}{2}$ Heisenberg model. The itinerant As hole state is downfolded to a $p_{xy}$-orbital hopping model on a square lattice. A unique orbital-dependent Hund's coupling between the spin and the hole is revealed. Several important material properties are analyzed, including (a) factors affecting the small $p-d$ charge-transfer gap; (b) role of the extra interchain Fe; and (c) the quasi-1D spin excitation in the Fe chains. The experimental manifestations of these properties are discussed.

cond-mat.str-el↗

Application of Hilbert-Huang decomposition to reduce noise and characterize for NMR FID signal of proton precession magnetometer

The parameters in a nuclear magnetic resonance (NMR) free induction decay (FID) signal contain information that is useful in magnetic field measurement, magnetic resonance sounding (MRS) and other related applications. A real time sampled FID signal is well modeled as a finite mixture of exponential sequences plus noise. We propose to use the Hilbert-Huang Transform (HHT) for noise reduction and characterization, where the generalized Hilbert-Huang represents a way to decompose a signal into so-called intrinsic mode function (IMF) along with a trend, and obtain instantaneous frequency data. Moreover, the HHT for an FID signal's feature analysis is applied for the first time. First, acquiring the actual untuned FID signal by a developed prototype of proton magnetometer, and then the empirical mode decomposition (EMD) is performed to decompose the noise and original FID. Finally, the HHT is applied to the obtained IMFs to extract the Hilbert energy spectrum, to indicate the energy distribution of the signal on the frequency axis. By theory analysis and the testing of an actual FID signal, the results show that, compared with general noise reduction methods such as auto correlation and singular value decomposition (SVD), combined with the proposed method can further suppress the interfered signals effectively, and can obtain different components of FID signal, which can use to identify the magnetic anomaly, the existence of groundwater etc. This is a very important property since it can be exploited to separate the FID signal from noise and to estimate exponential sequence parameters of FID signal.

physics.ins-det↗

Efficient cathodoluminescence of monolayer transitional metal dichalcogenides in a van der Waals heterostructure

Monolayer two-dimensional transitional metal dichalcogenides, such as MoS2, WS2 and WSe2, are direct band gap semiconductors with large exciton binding energy. They attract growing attentions for opto-electronic applications including solar cells, photo-detectors, light-emitting diodes and photo-transistors, capacitive energy storage, photodynamic cancer therapy and sensing on flexible platforms. While light-induced luminescence has been widely studied, luminescence induced by injection of free electrons could promise another important applications of these new materials. However, cathodoluminescence is inefficient due to the low cross-section of the electron-hole creating process in the monolayers. Here for the first time we show that cathodoluminescence of monolayer chalcogenide semiconductors can be evidently observed in a van der Waals heterostructure when the monolayer semiconductor is sandwiched between layers of hexagonal boron nitride (hBN) with higher energy gap. The emission intensity shows a strong dependence on the thicknesses of surrounding layers and the enhancement factor is more than 1000 folds. Strain-induced exciton peak shift in the suspended heterostructure is also investigated by the cathodoluminescence spectroscopy. Our results demonstrate that MoS2, WS2 and WSe2 could be promising cathodoluminescent materials for applications in single-photon emitters, high-energy particle detectors, transmission electron microscope displays, surface-conduction electron-emitter and field emission display technologies.

cond-mat.mes-hall↗

Gapped spin-1/2 spinon excitations in a new kagome quantum spin liquid compound Cu$_3$Zn(OH)$_6$FBr

We report a new kagome quantum spin liquid candidate Cu$_3$Zn(OH)$_6$FBr, which does not experience any phase transition down to 50 mK, more than three orders lower than the antiferromagnetic Curie-Weiss temperature ($\sim$ 200 K). A clear gap opening at low temperature is observed in the uniform spin susceptibility obtained from $^{19}$F nuclear magnetic resonance measurements. We observe the characteristic magnetic field dependence of the gap as expected for fractionalized spin-1/2 spinon excitations. Our experimental results provide firm evidence for spin fractionalization in a topologically ordered spin system, resembling charge fractionalization in the fractional quantum Hall state.

cond-mat.str-el↗

Direct Observation of Mono-, Bi-, and Tri-layer Charge Density Waves in 1T-TaS_2 by Transmission Electron Microscopy without a Substrate

Charge-density-waves (CDW) which occur mainly in low-dimensional systems have a macroscopic wave function similar to superfluids and superconductors. Kosterlitz-Thouless (KT) transition is observed in superfluids and superconductors, but the presence of KT transition in ultra-thin CDW systems has been an open problem. We report the direct real-space observation of CDWs with new order states in mono-, bi-, and tri-layer 1T-TaS_2 crystal by using a low voltage scanning-transmission-electron-microscope (STEM) without a substrate. This method is ideal to observe local atomic structures and possible defects. We clearly observed that the mono-layer crystal has a new triclinic stripe CDW order without the triple q condition q_1 + q_2 + q_3 = 0. A strong electron-phonon interaction gives rise to new crevasse (line) type defects instead of disclination (point) type defects due to the KT transition. These results reaffirm the importance of the electron-phonon interaction in mono-layer nanophysics.

cond-mat.mtrl-sci↗

Orbital-driven Mottness collapse in 1T-TaS2-xSex transition metal dichalcogenide

The vicinity of a Mott insulating phase has constantly been a fertile ground for finding exotic quantum states, most notably the high Tc cuprates and colossal magnetoresistance manganites. The layered transition metal dichalcogenide 1T-TaS2 represents another intriguing example, in which the Mott insulator phase is intimately entangled with a series of complex charge-density-wave (CDW) orders. More interestingly, it has been recently found that 1T-TaS2 undergoes a Mott-insulator-to-superconductor transition induced by high pressure, charge doping, or isovalent substitution. The nature of the Mott insulator phase and transition mechanism to the conducting state is still under heated debate. Here, by combining scanning tunneling microscopy (STM) measurements and first-principles calculations, we investigate the atomic scale electronic structure of 1T-TaS2 Mott insulator and its evolution to the metallic state upon isovalent substitution of S with Se. We identify two distinct types of orbital textures - one localized and the other extended - and demonstrates that the interplay between them is the key factor that determines the electronic structure. Especially, we show that the continuous evolution of the charge gap visualized by STM is due to the immersion of the localized-orbital-induced Hubbard bands into the extended-orbital-spanned Fermi sea, featuring a unique evolution from a Mott gap to a charge-transfer gap. This new mechanism of orbital-driven Mottness collapse revealed here suggests an interesting route for creating novel electronic state and designing future electronic devices.

cond-mat.str-el↗

Scalable fabrication of single silicon vacancy defect arrays in silicon carbide using focused ion beam

In this work, we present a method for targeted, maskless, and scalable fabrication of single silicon vacancy (VSi) defect arrays in silicon carbide (SiC) using focused ion beam. The resolution of implanted VSi defects is limited to a few tens of nanometers, defined by the diameter of the ion beam. Firstly, we studied the photoluminescence (PL) spectrum and optically detected magnetic resonance (ODMR) of the generated defect spin ensemble, confirming that the synthesized centers were in the desired defect state. Then we investigated the fluorescence properties of single VSi defects and our measurements indicate the presence of a photostable single photon source. Finally, we find that the Si++ ion to VSi defect conversion yield increases as the implanted dose decreases. The reliable production of VSi defects in silicon carbide could pave the way for its applications in quantum photonics and quantum information processing.

quant-ph↗

Zeeman splitting via spin-valley-layer coupling in bilayer MoTe2

Atomically thin transition metal dichalcogenides (TMDs) possess coupling of spin and valley degrees of freedom, making them promising for spin-valleytronics. ln monolayer TMDs, the emission helicity is locked to the valleys as a consequence of spin-orbit coupling and inversion symmetry breaking, leading to a valley analog of Zeeman effect in presence of out-of-plane magnetic field. As inversion symmetry is recovered in bilayers, the emission helicity should no longer be locked to the valleys. Here we show that Zeeman splitting, however, still persists in bilayers, as a result of an additional degree of freedom viz., the layer pseudospin and spin-valley-layer locking. In contrast to monolayer, Zeeman splitting here exists without lifting valley degeneracy. The degree of circularly polarized photoluminescence can be tuned with magnetic field from $-27\%$ to $27\%$. Our results demonstrate the control of degree of freedom in bilayer with magnetic field, which, together with previous electric field control, makes bilayer a promising platform for spin-valley quantum gates based on magnetoelectric effects.

cond-mat.mtrl-sci↗

Topological Weyl phase transition in Mo$_x$W$_{1-x}$Te$_2$

Topological phases of matter exhibit phase transitions between distinct topological classes. These phase transitions are exotic in that they do not fall within the traditional Ginzburg-Landau paradigm but are instead associated with changes in bulk topological invariants and associated topological surface states. In the case of a Weyl semimetal this phase transition is particularly unusual because it involves the creation of bulk chiral charges and the nucleation of topological Fermi arcs. Here we image a topological phase transition to a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$ with changing composition $x$. Using pump-probe ultrafast angle-resolved photoemission spectroscopy (pump-probe ARPES), we directly observe the nucleation of a topological Fermi arc at $x_c \sim 7\%$, showing the critical point of a topological Weyl phase transition. For Mo dopings $x < x_c$, we observe no Fermi arc, while for $x > x_c$, the Fermi arc gradually extends as the bulk Weyl points separate. Our results demonstrate for the first time the creation of magnetic monopoles in momentum space. Our work opens the way to manipulating chiral charge and topological Fermi arcs in Weyl semimetals for transport experiments and device applications.

cond-mat.mtrl-sci↗

Discovery of a new type of topological Weyl fermion semimetal state in Mo$_x$W$_{1-x}$Te$_2$

The recent discovery of a Weyl semimetal in TaAs offers the first Weyl fermion observed in nature and dramatically broadens the classification of topological phases. However, in TaAs it has proven challenging to study the rich transport phenomena arising from emergent Weyl fermions. The series Mo$_x$W$_{1-x}$Te$_2$ are inversion-breaking, layered, tunable semimetals already under study as a promising platform for new electronics and recently proposed to host Type II, or strongly Lorentz-violating, Weyl fermions. Here we report the discovery of a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$ at $x = 25\%$. We use pump-probe angle-resolved photoemission spectroscopy (pump-probe ARPES) to directly observe a topological Fermi arc above the Fermi level, demonstrating a Weyl semimetal. The excellent agreement with calculation suggests that Mo$_x$W$_{1-x}$Te$_2$ is the first Type II Weyl semimetal. We also find that certain Weyl points are at the Fermi level, making Mo$_x$W$_{1-x}$Te$_2$ a promising platform for transport and optics experiments on Weyl semimetals.

cond-mat.mtrl-sci↗

π-Conjugation in Epitaxial Si(111)-($\sqrt3$$\times$$\sqrt3$) Surface: an Unconventional "Bamboo Hat" Bonding Geometry for Si

The newly observed ($\sqrt3$$\times$$\sqrt3$) surface reconstruction in heteroepitaxial Si(111) thin films on metal substrates is widely considered as a promising platform to realize 2D Dirac and topological states, yet its formation mechanism and structural stability are poorly understood, leading to the controversial terminology of "multilayer silicene". Based on valence bond and conjugation theory, we propose a π-conjugation plus charge-transfer model to elucidate such a unique "bamboo hat" surface geometry. The formation of planar ring-shaped π-conjugation and charge transfer from the rings to upper buckled Si atoms greatly lower the surface dangling bond energy. We justify this unconventional Si structural model by analyzing from first-principles surface energies and surface stress tensors as a function of strain. Within the same formalism, additional metastable surface reconstructions with the similar "bamboo hat" features are predicted which opens possibilities to other exotic electronic states in silicon.

cond-mat.mtrl-sci↗

Temperature dependence of anisotropic thermal conductivity tensor of bulk black phosphorus

To date, the intrinsic thermal conductivity tensor of bulk black phosphorus (BP), an important 2D material, is still unknown, since recent studies focus on BP flakes not on bulk BP. Here we report the anisotropic thermal conductivity tensor of bulk BP, for temperature range 80 - 300 K. Our measurements are similar to prior measurements on submicron BP flakes along zigzag and armchair axes, but are >25% higher in the through-plane axis, suggesting that phonon mean-free-paths are substantially longer in the through-plane direction. We find that despite the anisotropy in thermal conductivity, phonons are predominantly scattered by the same Umklapp processes in all directions. We also find that the phonon relaxation time is rather isotropic in the basal planes, but is highly anisotropic in the through-plane direction. Our work advances fundamental knowledge of anisotropic scattering of phonons in BP and is an important benchmark for future studies on thermal properties of BP nanostructures.

cond-mat.mtrl-sci↗

Tuning Crowdsourced Human Computation

As the use of crowdsourcing increases, it is important to think about performance optimization. For this purpose, it is possible to think about each worker as a HPU(Human Processing Unit), and to draw inspiration from performance optimization on traditional computers or cloud nodes with CPUs. However, as we characterize HPUs in detail for this purpose, we find that there are important differences between CPUs and HPUs, leading to the need for completely new optimization algorithms. In this paper, we study the specific optimization problem of obtaining results fastest for a crowd sourced job with a fixed total budget. In crowdsourcing, jobs are usually broken down into sets of small tasks, which are assigned to workers one at a time. We consider three scenarios of increasing complexity: Identical Round Homogeneous tasks, Multiplex Round Homogeneous tasks, and Multiple Round Heterogeneous tasks. For each scenario, we analyze the stochastic behavior of the HPU clock-rate as a function of the remuneration offered. After that, we develop an optimum Budget Allocation strategy to minimize the latency for job completion. We validate our results through extensive simulations and experiments on Amazon Mechanical Turk.

cs.HC↗

High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide

Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single photon emission, good photostability, and long spin coherence time even at room temperature. As compared to diamond which is widely used for holding Nitrogen-vacancy centers, SiC has the advantage in terms of large-scale, high-quality and low cost growth, as well as advanced fabrication technique in optoelectronics, leading to the prospects for large scale quantum engineering. In this paper, we report experimental demonstration of the generation of nanoscale $V_{Si}$ single defect array through ion implantation without the need of annealing. $V_{Si}$ defects are generated in pre-determined locations with resolution of tens of nanometers. This can help in integrating $V_{Si}$ defects with the photonic structures which, in turn, can improve the emission and collection efficiency of $V_{Si}$ defects when it is used in spin photonic quantum network. On the other hand, the defects are shallow and they are generated $\sim 40nm$ below the surface which can serve as critical resources in quantum sensing application.

quant-ph↗

A minimal, "hydrogen atom" version of an inversion-breaking Weyl semimetal

The recent explosion of research interest in Weyl semimetals has led to many proposed Weyl semimetal candidates and a few experimental observations of a Weyl semimetal in real materials. Through this experience, we have come to appreciate that typical Weyl semimetals host many Weyl points. For instance, the first Weyl semimetal observed in experiment, TaAs, hosts 24 Weyl points. Similarly, the Mo$_x$W$_{1-x}$Te$_2$ series, recently under study as the first Type II Weyl semimetal, has eight Weyl points. However, it is well-understood that for a Weyl semimetal without inversion symmetry but with time-reversal symmetry, the minimum number of Weyl points is four. Realizing such a minimal Weyl semimetal is fundamentally relevant because it would offer the simplest "hydrogen atom" example of an inversion-breaking Weyl semimetal. At the same time, transport experiments and device applications may be simpler in a system with as few Weyl points as possible. Recently, TaIrTe$_4$ has been predicted to be a minimal, inversion-breaking Weyl semimetal. However, crucially, the Weyl points and Fermi arcs live entirely above the Fermi level, making them inaccessible to conventional angle-resolved photoemission spectroscopy (ARPES). Here we use pump-probe ARPES to directly access the band structure above the Fermi level in TaIrTe$_4$. We directly observe Weyl points and topological Fermi arcs, showing that TaIrTe$_4$ is a Weyl semimetal. We find that, in total, TaIrTe$_4$ has four Weyl points, providing the first example of a minimal inversion-breaking Weyl semimetal. Our results hold promise for accessing exotic transport phenomena arising in Weyl semimetals in a real material.

cond-mat.mes-hall↗

Magnetic Dirac Fermions and Chern Insulator Supported on Pristine Silicon Surface

Emergence of ferromagnetism in non-magnetic semiconductors is strongly desirable, especially in topological materials thanks to the possibility to achieve quantum anomalous Hall effect. Based on first-principles calculations, we propose that for Si thin film grown on metal substrate, the pristine Si(111)-root3xroot3 surface with a spontaneous weak reconstruction has a strong tendency of ferromagnetism and nontrivial topological properties, characterized by spin polarized Dirac-fermion surface states. In contrast to conventional routes relying on introduction of alien charge carriers or specially patterned substrates, the spontaneous magnetic order and spin-orbit coupling on the pristine silicon surface together gives rise to quantized anomalous Hall effect with a finite Chern number C=-1. This work suggests exciting opportunities in silicon-based spintronics and quantum computing free from alien dopants or proximity effects.

cond-mat.mes-hall↗

Large-area and high-quality 2D transition metal telluride

Atomically thin transitional metal ditellurides like WTe2 and MoTe2 have triggered tremendous research interests because of their intrinsic nontrivial band structure. They are also predicted to be 2D topological insulators and type-II Weyl semimetals. However, most of the studies on ditelluride atomic layers so far rely on the low-yield and time-consuming mechanical exfoliation method. Direct synthesis of large-scale monolayer ditellurides has not yet been achieved. Here, using the chemical vapor deposition (CVD) method, we demonstrate controlled synthesis of high-quality and atom-thin tellurides with lateral size over 300 μm. We found that the as-grown WTe2 maintains two different stacking sequences in the bilayer, where the atomic structure of the stacking boundary is revealed by scanning transmission electron microscope (STEM). The low-temperature transport measurements revealed a novel semimetal-to-insulator transition in WTe2 layers and an enhanced superconductivity in few-layer MoTe2. This work paves the way to the synthesis of atom-thin tellurides and also quantum spin Hall devices.

cond-mat.mtrl-sci↗