arXiv subjects

Zheng Shu

Publications and source records attributed to Zheng Shu.

11 recordsLinked to original sources

arXiv2023

High-throughput screening of heterogeneous transition metal dual-atom catalysts by synergistic effect for nitrate reduction to ammonia

Nitrate reduction to ammonia has attracted much attention for nitrate (NO3-) removal and ammonia (NH3) production. Identifying promising catalyst for active nitrate electroreduction reaction (NO3RR) is critical to realize efficient upscaling synthesis of NH3 under low-temperature condition. For this purpose, by means of spin-polarized first-principles calculations, the NO3RR performance on a series of graphitic carbon nitride (g-CN) supported double-atom catalysts (denoted as M1M2@g-CN) are systematically investigated. The synergistic effect of heterogeneous dual-metal sites can bring out tunable activity and selectivity for NO3RR. Amongst 21 candidates examined, FeMo@g-CN and CrMo@g-CN possess a high performance with low limiting potentials of -0.34 and -0.39 V, respectively. The activities can be attributed to a synergistic effect of the M1M2 dimer d orbitals coupling with the anti-bonding orbital of NO3-. The dissociation of deposited FeMo and CrMo dimers into two separated monomers is proved to be difficult, ensuring the kinetic stability of M1M2@g-CN. Furthermore, the dual-metal decorated on g-CN significantly reduces the bandgap of g-CN and broadens the adsorption window of visible light, implying its great promise for photocatalysis. This work opens a new avenue for future theoretical and experimental design related to NO3RR photo-/electrocatalysts.

cond-mat.mtrl-sci↗

arXiv2023

Thickness-dependent catalytic activity of hydrogen evolution based on single atomic catalyst of Pt above MXene

Hydrogen as the cleanest energy carrier is a promising alternative renewable resource to fossil fuels. There is an ever-increasing interest in exploring efficient and cost-effective approaches of hydrogen production. Recent experiments have shown that single platinum atom immobilized on the metal vacancies of MXenes allows a high-efficient hydrogen evolution reaction (HER). Here using ab initio calculations, we design a series of substitutional Pt-doped Tin+1CnTx (Tin+1CnTx-PtSA) with different thicknesses and terminations (n = 1, 2 and 3, Tx = O, F and OH), and investigate the quantum-confinement effect on the HER catalytic performance. Surprisingly, we reveal a strong thickness effect of the MXene layer on the HER performance. Amongst the various surface-terminated derivatives, Ti2CF2-PtSA and Ti2CH2O2-PtSA are found to be the best HER catalysts with the change of Gibbs free energy ΔG*H ~ 0 eV, complying with the thermoneutral condition. The ab initio molecular dynamics simulations reveal that Ti2CF2-PtSA and Ti2CH2O2-PtSA possess a good thermodynamic stability. The present work shows that the HER catalytic activity of the MXene is not solely governed by the local environment of the surface such as Pt single atom. We point out the critical role of thickness control and surface decoration of substrate in achieving a high-performance HER catalytical activity.

cond-mat.mtrl-sci↗

arXiv2023

High-performance Thermoelectric Monolayer γ-GeSe and its Group-IV Monochalcogenide Isostructural Family

Recently synthesized novel phase of germanium selenide (γ-GeSe) adopts a hexagonal lattice and a surprisingly high conductivity than graphite. This triggers great interests in exploring its potential for thermoelectric applications. Herein, we explored the thermoelectric performance of monolayer γ-GeSe and other isostructural γ-phase of group-IV monochalcogenides γ-GeX (X = S, Se and Te) using the density functional theory and the Boltzmann transport theory. A superb thermoelectric performance of monolayer γ-GeSe is revealed with figure of merit ZT value up to 1.13-2.76 for n-type doping at a moderate carrier concentration of 4.73-2.58x10^12 cm-2 between 300 and 600 K. This superb performance is rooted in its rich pocket states and flat plateau levels around the electronic band edges, leading to promoted concentrations and electronic conductivity, and limited thermal conductivity. Our work suggests that monolayer γ-GeSe is a promising candidate for high performance medium-temperature thermoelectric applications.

cond-mat.mtrl-sci↗

arXiv2022

Fast Intercalation of Lithium in Semi-Metallic γ-GeSe Nanosheet: A New Group-IV Monochalcogenide for Lithium-Ion Battery Application

Existence of van der Waals gaps renders two-dimensional (2D) materials ideal passages of lithium for being used as anode materials. However, the requirement of good conductivity significantly limits the choice of 2D candidates. So far only graphite is satisfying due to its relatively high conductivity. Recently, a new polymorph of layered germanium selenide (Gamma-GeSe) was proven to be semimetal in its bulk phase with a higher conductivity than graphite while its monolayer behaves semiconducting. In this work, by using first-principles calculations, we examined the possibility of using this new group-IV monochalcogenide, Gamma-GeSe, as anode in the Li-ion battery (LIBs). Our studies revealed that Li atom would form an ionic adsorption with adjacent selenium atoms at the hollow site and exist in cationic state (lost 0.89 e to Gamma-GeSe). Results of climbing image-nudged elastic band show the diffusion barrier of Li is 0.21 eV in the monolayer limit, which can activate a relatively fast diffusion even at room temperature on the Gamma-GeSe surface. The calculated theoretical average voltages range from 0.071 to 0.015 V at different stoichiometry of LixGeSe with minor volume variation, suggesting its potential application as anode of LIBs. The predicted moderate binding energy, a low open circuit voltage (comparable to graphite) and a fast motion of Li suggests that Gamma-GeSe nanosheet can be chemically exfoliated via Li intercalation and a promising candidate as the anode material for LIBs.

cond-mat.mtrl-sci↗

arXiv2022

Efficient Passivation of Surface Defects by Lewis Base in Lead-free Tin-based Perovskite Solar Cells

Lead-free tin-based perovskites are highly appealing for the next generation of solar cells due to their intriguing optoelectronic properties. However, the tendency of Sn2+ oxidation to Sn4+ in the tin-based perovskites induces serious film degradation and performance deterioration. Herein, we demonstrate, through the density functional theory based first-principle calculations in a surface slab model, that the surface defects of the Sn-based perovskite FASnI3 (FA = NH2CHNH2+) could be effectively passivated by the Lewis base molecules. The passivation performance of Lewis base molecules in tin-based perovskite is tightly correlated with their molecular hardness. We reveal that the degree of hardness of Lewis adsorbate governs the stabilization via dual effects: first, changing the stubborn spatial distribution of tin vacancy (VSn) by triggering charge redistribution; second, saturating the dangling states while simultaneously reducing the amounts of deep band gap states. Specifically, the hard Lewis base molecules like edamine (N-donor group) and Isatin-Cl (Cl-donor group) would show a better healing effect than other candidates on the defects-contained tin-based perovskite surface with a somehow hard Lewis acid nature. Our research provides a general strategy for additive engineering and fabricating stable and high-efficiency lead-free Sn-based perovskite solar cells.

physics.chem-ph↗

arXiv2022

Mutual modulation via charge transfer and unpaired electrons of catalyt-ic site for superior intrinsic activity of N2 reduction: from high-throughput computations assisted with machine learning perspective

Electrocatalysts of nitrogen reduction reaction (NRR) have attracted ever-growing attention due to its application for renewable energy alternative to fossil fuels. However, activation of inert N-N bond requires multiple complex charge injection which complicates the design of the catalysts. Here via combining atomic-scale screening and machine learning (ML) methods we explore the rational design of NRR single-atom catalysts (SACs) supported by molybdenum disulfide (MoS2). Our work reveals that the activity of NRR SACs is highly dependent on the number of unpaired d electrons of TM: positive samples with high activity favoring higher values while negative cases distributing at lower values, both varying with the doping conditions of the host. We find that the substitution of sulfur with boron can activate the intrinsic NRR activity of some TMs such as Ti and V which are otherwise inactive above pristine MoS2. Importantly, among the various de-scriptors used in ML, the charged state of adsorbed TM plays a key role in donating electron to pi-anti-bonding orbital of N2 via the back-donation mechanism. Our work shows a feasible strategy for rational design of NRR SACs and retrieval of the decisive feature of active catalysts.

cond-mat.mtrl-sci↗

arXiv2022

Substitutional Doped GeSe: Tunable Oxidative States with Strain Engineering

Layered chalcogenide materials have a wealth of nanoelectronics applications like resistive switching and energy-harvesting such as photocatalyst owing to rich electronic, orbital, and lattice excitations. In this work, we explore monochalcogenide germanium selenide GeSe with respect to substitutional doping with 13 metallic cations by using first-principles calculations. Typical dopants including s-shell (alkali elements Li and Na), p-shell (Al, Pb and Bi), 3d (Fe, Cu, Co and Ni), 4d (Pd and Ag) and 5d (Au and Pt) elements are systematically examined. Amongst all the cationic dopants, Al with the highest oxidation states, implying a high mobility driven by electric field, and Al-doped GeSe may be a promising candidate for novel resistive switching devices. We show that there exist many localized induced states in the band gap of GeSe upon doping Fe, Co, or Ni, while for Cu, Ag, and Au cases there is no such states in the gap. The Ag and Cu are + 0.27 and + 0.35 charged respectively and the positive charges are beneficial for field-driven motion in GeSe. In contrast, Au is slightly negatively charged renders Au-doped GeSe a promising photocatalyst and enhanced surface plasmon. Moreover, we explore the coexistence of dopant and strain in GeSe and find dynamical adjustments of localized states in GeSe with levels successive shifting upward/downward with strain. This induces dynamic oxidative states of the dopants under strain which should be quite popular in composites where motion of metal adatoms causes significant deformation.

cond-mat.mtrl-sci↗

arXiv2022

Activation of Phosphorene-like Two-dimensional GeSe for Efficient Electrocatalytic Nitrogen Reduction via States Filtering of Ru

Nitrogen reduction reaction (NRR) which converts nitrogen (N2) to ammonia (NH3) normally requires harsh conditions to break the bound nitrogen bond. Herein, via first-principles calculation we reveal that a superior NRR catalytic activity could be obtained through anchoring atomic catalyst above a phosphorene-like puckering surface of germanium selenide (GeSe). Through examining the single- and double- atoms (B, Fe, W, Mo and Ru) decorated on GeSe, we find that its rippled structure allows an intimate contact between the deposited species and the GeSe which significantly promotes the states hybridization. Amongst the various atomic catalyst, we predict that the Ru dimer decorated GeSe monolayer (Ru2@GeSe) has superior catalytic activity for the N2 fixation and reduction. Through examining the three NRR pathways (distal, alternating and enzymatic), the distal and enzymatic pathway is both the thermodynamically favorable with the maximum Gibbs free energy change (ΔGMAX) of 0.25 and 0.26 eV, respectively. Such a superior activity could be attributed to the filtered states of GeSe by Ru dimer which leads to the effective activation of the adsorbed N2 bond. As an efficient near-infrared absorber of GeSe, the Ru mediated hybridization of GeSe-Ru-N2 complex enables an in-gap state which further broadens the absorbing window, rendering for a broadband solar absorption and possible photocatalysis.

cond-mat.mtrl-sci↗

arXiv2020

The effect of Coulomb field on laser-induced ultrafast imaging methods

By performing a joint theoretical and experimental investigation on the high-order above-threshold ionization (HATI) spectrum, the dominant role of the 3rd-return-recollision trajectories in the region near the cutoff due to the ionic Coulomb field is identified. This invalidates the key assumption adopted in the conventional laser-induced electron diffraction (LIED) approach that the 1st-returnrecollision trajectories dominate the spectrum according to strong field approximation (SFA). Our results show that the incident (return) electron beams produced by the 1st and 3rd returns possess distinct characteristics of beam energy, beam diameter and temporal evolution law due to the influence of Coulomb field, and therefore the extracted results in the LIED will be altered if the significance of the 3rd-return-recollision trajectories is properly considered in the analysis. Such Coulomb field effect should be taken into account in all kinds of laser-induced imaging schemes based on recollision.

physics.atom-ph↗

arXiv2019

Accuracy of the semiclassical picture of photoionization in intense laser fields

In the semiclassical picture of photoionization process in intense laser fields, the ionization rate solely depends on the amplitude of the electric field and the final photoelectron momentum corresponds to the instant of ionization of the photoelectron, however, this picture has never been checked rigorously. Recently an attosecond angular streaking technique based on this semiclassical perspective has been widely applied to temporal measurement of the atomic and molecular dynamics in intense laser fields. We use a Wigner-distribution-like function to calculate the time-emission angle distribution, angular distribution and ionization time distribution for atomic ionization process in elliptically polarized few-cycle laser fields. By comparing with semiclassical calculations, we find that the two methods always show discrepancies except in some specific cases and the offset angles are generally not consistent with the offset times of the ionization time distributions obtained by the two methods even when the non-adiabatic effect is taken into account, indicating that the "attoclock" technique is in principle inaccurate. Moreover, calculations for linearly polarized laser fields also show similar discrepancies between two methods in the ionization time distribution. Our analysis indicates that the discrepancy between the semiclassical and quantum calculations can be attributed to correlation, i. e., temporal nonlocalization effect.

physics.atom-ph↗

arXiv2019

Wavelength Dependent Tunneling Delay Time

A clear consensus on how long it takes a particle to tunnel through a potential barrier has never been so urgently required, since the electron dynamics in strong-field ionization can be resolved on attosecond time-scale in experiment and the exact nature of the tunneling process is the key to trigger subsequent attosecond techniques. Here a general picture of tunneling time is suggested by introducing a quantum travel time, which is defined as the ratio of the travel distance to the expected value of the velocity operator under the barrier. Specially, if applied to rectangular barrier tunneling, it can retrieve the Büttiker-Landauer time $τ_{BL}$ in the case of an opaque barrier, and has a clear physical meaning in the case of a very thin barrier wherein $τ_{BL}$ can not be well defined. In the case of strong-field tunneling process, with the help of the newly defined time, the tunneling delay time measured by attoclock experiment can be interpreted as a travel time spent by the electron to tunnel from a point under the barrier to the tunnel exit. In addition, a peculiar oscillation structure in the wavelength dependence of tunneling delay time in deep tunneling regime is observed, which is beyond the scope of adiabatic tunneling picture. This oscillation structure can be attributed to the interference between the ground state tunneling channel and the excited states tunneling channels.

physics.atom-ph↗