arXiv subjects

Zhengfei Wang

Publications and source records attributed to Zhengfei Wang.

At least 19 recordsLinked to original sources

arXiv2026

Tunable Flat Bands and magnetism in Triangulene-based Superatomic Graphene

Superatomic graphene platforms host a rich portfolio of flat-band-driven exotic quantum properties, yet their experimental realization remains challenging. Here, we report the bottom-up on-surface synthesis of superatomic graphene using phosphorus-doped triangulene as building blocks. Scanning tunneling microscopy and spectroscopy measurements resolve the well-defined honeycomb lattice of as-fabricated superatomic graphene and demonstrate the characteristic Dirac band and flat band electronic structures. Density functional theory calculations reveal that the flat bands originate from the in-plane p$_x,_y$-like frontier orbitals of the phosphorus-doped triangulene units, leading to intrinsic half-metallic behavior. Furthermore, oxygen functionalization of the molecular precursor enables deterministic modulation of the electronic structure and magnetic ordering. This work establishes a general platform for designing correlated quantum materials with tunable flat band properties.

cond-mat.mtrl-sci↗

arXiv2025

Anisotropic response of defect bound states to magnetic field in epitaxial FeSn films

Crystal defects, whether intrinsic or engineered, drive many fundamental phenomena and novel functionalities of quantum materials. Here, we report symmetry-breaking phenomena induced by Sn-vacancy defects on the surface of epitaxial Kagome antiferromagnet FeSn films using low-temperature scanning tunneling microscopy and spectroscopy. Near the Sn-vacancy defects, anisotropic quasiparticle interference patterns are observed in the differential conductance dI/dV maps, indicating two-fold electronic states that break the 6-fold rotational symmetry of the Kagome layer. Furthermore, the Sn-vacancy defects induce bound states that exhibit anomalous Zeeman shifts under an out-of-plane magnetic field, where their energy shifts linearly towards higher energy independent of the direction of the magnetic field. Under an in-plane magnetic field, the shift of the bound state energy also shows a two-fold oscillating behavior as a function of the azimuth angle. These findings demonstrate defect-enabled new functionalities in Kagome antiferromagnets for potential applications in nanoscale spintronic devices.

cond-mat.mtrl-sci↗

arXiv2024

Half-Metallicity in Triangulene-based Superatomic Graphene

The discovery of two-dimensional (2D) magnets has opened up new possibilities for miniaturizing spintronic devices to the monolayer limit. 2D half-metals, capable of conducting fully spin-polarized currents when spin-orbit coupling is minimal, provide a key advantage in improving device performance. Extensive theoretical research has been carried out to discover 2D half-metals, yet their realization remains elusive. Here we report the bottom-up synthesis of superatomic graphene and the demonstration of its half-metallic properties. The produced graphene half-metal is fabricated through an on-surface synthetic approach with phosphorus-doped triangulene as its building block. Scanning tunneling microscopy measurements reveal its metallic band structures and identify its ferromagnetism through magnon excitation under varying magnetic fields. Density functional theory simulations accurately capture its half-metallic characteristics, uncovering the origin of spin-polarized bands from the p$_x,_y$-like orbital of superatomic graphene. Our work demonstrates intrinsic 2D carbon magnetism, paving the way for harnessing its advantages in spintronics.

cond-mat.mes-hall↗

arXiv2023

Visualizing symmetry-breaking electronic orders in epitaxial Kagome magnet FeSn films

Kagome lattice hosts a plethora of quantum states arising from the interplay of topology, spin-orbit coupling, and electron correlations. Here, we report symmetry-breaking electronic orders tunable by an applied magnetic field in a model Kagome magnet FeSn consisting of alternating stacks of two-dimensional Fe3Sn Kagome and Sn2 honeycomb layers. On the Fe3Sn layer terminated FeSn thin films epitaxially grown on SrTiO3(111) substrates, we observe trimerization of the Kagome lattice using scanning tunneling microscopy/spectroscopy, breaking its six-fold rotational symmetry while preserving the transitional symmetry. Such a trimerized Kagome lattice shows an energy-dependent contrast reversal in dI/dV maps, which is significantly enhanced by bound states induced by Sn vacancy defects. This trimerized Kagome lattice also exhibits stripe modulations that are energy-dependent and tunable by an applied in-plane magnetic field, indicating symmetry-breaking nematicity from the entangled magnetic and charge degrees of freedom in antiferromagnet FeSn.

cond-mat.mtrl-sci↗

arXiv2019

Excited quantum Hall effect: enantiomorphic flat bands in a Yin-Yang Kagome lattice

Quantum Hall effect (QHE) is one of the most fruitful research topics in condensed-matter physics. Ordinarily, the QHE manifests in a ground state with time-reversal symmetry broken by magnetization to carry a quantized chiral edge conductivity around a two-dimensional insulating bulk. We propose a theoretical concept and model of non-equilibrium excited-state QHE (EQHE) without intrinsic magnetization. It arises from circularly polarized photoexcitation between two enantiomorphic flat bands of opposite chirality, each supporting originally a helical topological insulating state hosted in a Yin-Yang Kagome lattice. The chirality of its edge state can be reversed by the handedness of light, instead of the direction of magnetization as in the conventional quantum (anomalous) Hall effect, offering a simple switching mechanism for quantum devices. Implications and realization of EQHE in real materials are discussed.

cond-mat.mtrl-sci↗

arXiv2019

Evidence for Weyl fermions in the elemental semiconductor tellurium

The recent discovery of Weyl fermions in solids enables exploitation of relativistic physics and development of a spectrum of intriguing physical phenomena. They are constituted of pairs of Weyl points with two-fold band degeneracy, which in principle can be hosted in any materials without inversion or time-reversal symmetry. However, previous studies of Weyl fermions have been limited exclusively to semimetals. Here, by combining magneto-transport measurements, angle-resolved photoemission spectroscopy, and band structure calculations, Weyl fermions are identified in an elemental semiconductor tellurium. This is mainly achieved by direct observation of the representative transport signatures of the chiral anomaly, including the negative longitudinal magnetoresistance and the planar Hall effect. Semiconductor materials are well suited for band engineering, and therefore provide an ideal platform for manipulating the fundamental Weyl fermionic behaviors. Furthermore, introduction of Weyl physics into semiconductors to develop "Weyl semiconductors" also creates a new degree of freedom for the future design of semiconductor electronic and optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2019

Weyl points created by a three-dimensional flat band

Following the discovery of topological insulators (TIs), topological Dirac/Weyl semimetal has attracted much recent interest. A prevailing mechanism for the formation of Weyl points is by breaking time-reversal symmetry (TRS) or spatial inversion symmetry of a Dirac point. Here we demonstrate a generic formation mechanism for Weyl points by breaking TRS of a three-dimensional (3D) TI featured with highly degenerate 3D flat bands (FBs). It is in direct contrast to the conventional view that breaking TRS of a 2D/3D TI leads to a Chern insulator exhibiting quantum anomalous Hall effect. Based on a tight-binding model of pyrochlore lattice, we show that this unusual 3D-FB-enabled Weyl state may contain only a minimum of two Weyl points. Furthermore, using first-principles calculations, we identify this Weyl state in a real material Sn$_2$Nb$_2$O$_7$. The main features of the resulting Weyl points are analyzed with respect to symmetry, topological invariant and surface state. Our finding sheds new light on our fundamental understanding of topological physics and significantly extends the scope of Weyl semimetals to attract immediate experimental interest.

cond-mat.mes-hall↗

arXiv2019

Theory of Epitaxial Growth of Borophene on Layered Electride: Thermodynamic Stability and Kinetic Pathway

Based on first-principles calculations, we propose that a layered electride Mg2O can serve as an effective substrate, in place of metal substrate, to grow honeycomb borophene (h-borophene). We first confirm the thermodynamic stability of h-B@Mg2O heterostructure by energetics analysis and dynamic stability by absence of imaginary frequency in phonon spectra. Then, kinetically, we identify the atomistic pathways for a preferred 2D growth mode over 3D growth, and reveal a growth transition from 2D compact islands to h-borophene at ~13-atom cluster size, indicating the feasibility of epitaxial growth of h-borophene on Mg2O. The h-borophene is found to be stabilized by nearly one electron transfer from Mg2O to h-borophene based on the Bader charge analysis. Moreover, the intrinsic band structure of the free-standing h-borophene is only weakly perturbed by the Mg2O substrate, a significant advantage over metal substrate. We envision that layered electrides provide an attractive family of substrates for epitaxial growth of a range of 2D materials that can otherwise only be grown on undesirable metal substrates.

cond-mat.mtrl-sci↗

arXiv2019

Artificial Intelligence for Prosthetics - challenge solutions

In the NeurIPS 2018 Artificial Intelligence for Prosthetics challenge, participants were tasked with building a controller for a musculoskeletal model with a goal of matching a given time-varying velocity vector. Top participants were invited to describe their algorithms. In this work, we describe the challenge and present thirteen solutions that used deep reinforcement learning approaches. Many solutions use similar relaxations and heuristics, such as reward shaping, frame skipping, discretization of the action space, symmetry, and policy blending. However, each team implemented different modifications of the known algorithms by, for example, dividing the task into subtasks, learning low-level control, or by incorporating expert knowledge and using imitation learning.

cs.LG↗

arXiv2018

N2RPP: An Adversarial Network to Rebuild Plantar Pressure for ACLD Patients

Foot is a vital part of human, and lots of valuable information is embedded. Plantar pressure is one of which contains this information and it describes human walking features. It is proved that once one has trouble with lower limb, the distribution of plantar pressure will change to some degree. Plantar pressure can be converted into images according to some simple standards. In this paper, we take full advantage of these plantar pressure images for medical usage. We present N2RPP, a generative adversarial network (GAN) based method to rebuild plantar pressure images of anterior cruciate ligament deficiency (ACLD) patients from low dimension features, which are extracted from an autoencoder. Through the result of experiments, the extracted features are a useful representation to describe and rebuild plantar pressure images. According to N2RPP's results, we find out that there are several noteworthy differences between normal people and patients. This can provide doctors a rough direction of adjusting plantar pressure to a better distribution to reduce patients' sore and pain during the rehabilitation treatment for ACLD.

cs.CV↗

arXiv2018

A Model for Medical Diagnosis Based on Plantar Pressure

The process of determining which disease or condition explains a person's symptoms and signs can be very complicated and may be inaccurate in some cases. The general belief is that diagnosing diseases relies on doctors' keen intuition, rich experience and professional equipment. In this work, we employ ideas from recent advances in plantar pressure research and from the powerful capacity of the convolutional neural network for learning representations. Here, we propose a model using convolutional neural network based on plantar pressure for medical diagnosis. Our model learns a network that maps plantar pressure data to its corresponding medical diagnostic label. We then apply our model to make the medical diagnosis on datasets we collected from cooperative hospital and achieve an accuracy of 98.36%. We demonstrate that the model base on the convolutional neural network is competitive in medical diagnosis.

cs.CV↗

arXiv2018

Ubiquitous Ideal Spin-Orbit Coupling in a Screw Dislocation in Semiconductors

We theoretically demonstrate that screw dislocation (SD), a 1D topological defect widely present in semiconductors, exhibits ubiquitously a new form of spin-orbit coupling (SOC) effect. Differing from the widely known conventional 2D Rashba-Dresselhaus (RD) SOC effect that typically exists at surfaces/interfaces, the deep-level nature of SD-SOC states in semiconductors readily makes it an ideal SOC. Remarkably, the spin texture of 1D SD-SOC, pertaining to the inherent symmetry of SD, exhibits a significantly higher degree of spin coherency than the 2D RD-SOC. Moreover, the 1D SD-SOC can be tuned by ionicity in compound semiconductors to ideally suppress spin relaxation, as demonstrated by comparative first-principles calculations of SDs in Si/Ge, GaAs, and SiC. Our findings therefore open a new door to manipulating spin transport in semiconductors by taking advantage of an otherwise detrimental topological defect.

cond-mat.mtrl-sci↗

arXiv2017

Spin Fluctuation Induced Linear Magnetoresistance in Ultrathin Superconducting FeSe Films

The discovery of high-temperature superconductivity in FeSe/STO has trigged great research interest to reveal a range of exotic physical phenomena in this novel material. Here we present a temperature dependent magnetotransport measurement for ultrathin FeSe/STO films with different thickness and protection layers. Remarkably, a surprising linear magnetoresistance (LMR) is observed around the superconducting transition temperatures but absent otherwise. The experimental LMR can be reproduced by magnetotransport calculations based on a model of magnetic field dependent disorder induced by spin fluctuation. Thus, the observed LMR in coexistence with superconductivity provides the first magnetotransport signature for spin fluctuation around the superconducting transition region in ultrathin FeSe/STO films.

cond-mat.mes-hall↗

arXiv2014

Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling

For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a unique approach to create the large-gap 2D TI state on a semiconductor surface, based on first-principles calculations and effective Hamiltonian analysis. We show that when heavy elements with strong spin orbit coupling (SOC) such as Bi and Pb atoms are deposited on a patterned H-Si(111) surface into a hexagonal lattice, they exhibit a 2D TI state with a large energy gap of over 0.5 eV. The TI state arises from an intriguing substrate orbital filtering effect that selects a suitable orbital composition around the Fermi level, so that the system can be matched onto a four-band effective model Hamiltonian. Furthermore, it is found that within this model, the SOC gap does not increase monotonically with the increasing strength of SOC. These interesting results may shed new light in future design and fabrication of large-gap topological quantum states.

cond-mat.mes-hall↗

arXiv2014

Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface

Formation of topological quantum phase on conventional semiconductor surface is of both scientific and technological interest. Here, we demonstrate epitaxial growth of 2D topological insulator, i.e. quantum spin Hall (QSH) state, on Si(111) surface with a large energy gap, based on first-principles calculations. We show that Si(111) surface functionalized with 1/3 monolayer of halogen atoms [Si(111)-sqrt(3) x sqrt(3)-X (X=Cl, Br, I)] exhibiting a trigonal superstructure, provides an ideal template for epitaxial growth of heavy metals, such as Bi, which self-assemble into a hexagonal lattice with high kinetic and thermodynamic stability. Most remarkably, the Bi overlayer is "atomically" bonded to but "electronically" decoupled from the underlying Si substrate, exhibiting isolated QSH state with an energy gap as large as 0.8 eV. This surprising phenomenon is originated from an intriguing substrate orbital filtering effect, which critically select the orbital composition around the Fermi level leading to different topological phases. Particularly, the substrate-orbital-filtering effect converts the otherwise topologically trivial freestanding Bi lattice into a nontrivial phase; while the reverse is true for Au lattice. The underlying physical mechanism is generally applicable, opening a new and exciting avenue for exploration of large-gap topological surface/interface states.

cond-mat.mtrl-sci↗

arXiv2014

sd2 Graphene: Kagome Band in Hexagonal lattice

Graphene, made of sp2 hybridized carbon, is characterized with a Dirac band, representative of its underlying 2D hexagonal lattice. Fundamental understanding of graphene has recently spurred a surge of searching for 2D topological quantum phases in solid-state materials. Here, we propose a new form of 2D material, consisting of sd2 hybridized transition metal atoms in hexagonal lattice, called sd2 graphene. The sd2 graphene is characterized with bond-centered electronic hopping, which transforms the apparent atomic hexagonal lattice into the physics of kagome lattice that may exhibit a wide range of topological quantum phases. Based on first-principles calculations, room temperature quantum anomalous Hall states with an energy gap of 0.1 eV are demonstrated for one such lattice made of W, which can be epitaxially grown on a semiconductor surface of 1/3 monolayer Cl-covered Si(111), with high thermodynamic and kinetic stability.

cond-mat.mtrl-sci↗

arXiv2014

Graphene's morphology and electronic properties from discrete differential geometry

The geometry of two-dimensional crystalline membranes dictates their mechanical, electronic and chemical properties. The local geometry of a surface is determined from the two invariants of the metric and the curvature tensors. Here we discuss those invariants directly from atomic positions in terms of angles, areas, vertex and normal vectors from carbon atoms on the graphene lattice, for arbitrary elastic regimes and atomic conformations, and without recourse to an effective continuum model. The geometrical analysis of graphene membranes under mechanical load is complemented with a study of the local density of states (LDOS), discrete induced gauge potentials, velocity renormalization, and non-trivial electronic effects originating from the scalar deformation potential. The asymmetric LDOS is related to sublattice-specific deformation potential differences, giving rise to the pseudomagnetic field. The results here enable the study of geometrical, mechanical and electronic properties for arbitrarily-shaped graphene membranes in experimentally-relevant regimes without recourse to differential geometry and continuum elasticity.

cond-mat.mes-hall↗

arXiv2013

Strain-engineering of graphene's electronic structure beyond continuum elasticity

We present a new first-order approach to strain-engineering of graphene's electronic structure where no continuous displacement field $\mathbf{u}(x,y)$ is required. The approach is valid for negligible curvature. The theory is directly expressed in terms of atomic displacements under mechanical load, such that one can determine if mechanical strain is varying smoothly at each unit cell, and the extent to which sublattice symmetry holds. Since strain deforms lattice vectors at each unit cell, orthogonality between lattice and reciprocal lattice vectors leads to renormalization of the reciprocal lattice vectors as well, making the $K$ and $K'$ points shift in opposite directions. From this observation we conclude that no $K-$dependent gauges enter on a first-order theory. In this formulation of the theory the deformation potential and pseudo-magnetic field take discrete values at each graphene unit cell. We illustrate the formalism by providing strain-generated fields and local density of electronic states on graphene membranes with large numbers of atoms. The present method complements and goes beyond the prevalent approach, where strain engineering in graphene is based upon first-order continuum elasticity.

cond-mat.mes-hall↗