arXiv subjects

Zhengguo Liang

Publications and source records attributed to Zhengguo Liang.

3 recordsLinked to original sources

arXiv2026

Symmetry-engineered and electrically tunable in-plane anomalous Hall effect in oxide heterostructures

The family of Hall effects has long served as a premier probe of how symmetry, magnetic order, and topology intertwine in solids. Recently, the in-plane anomalous Hall effect (IP-AHE), a transverse Hall response driven by in-plane magnetization, has emerged as a distinct member of this family, offering innovative spintronic functionalities and illuminating intricate interplay between mirror-symmetry breaking and in-plane magnetic order. However, practical routes to deterministically and reversibly control IP-AHE remain limited. Here, we establish a symmetry-engineered IP-AHE platform, CaRuO3/La2/3Ca1/3MnO3/CaRuO3 heterostructure on NdGaO3(110), that turns strict mirror-symmetry breaking constraints into effective tuning knobs. IP-AHE in these epitaxial trilayers unambiguously couples to the CaRuO3-buffer-induced mirror-symmetry breaking and faithfully reproduces the ferromagnetic hysteresis. Ionic liquid gating further enables reversible reconfigurations of the symmetry breaking, thereby achieving electrical modulation and ON/OFF switching of IP-AHE. This highly tunable IP-AHE platform opens pathways for exploring nontrivial magnetic order and developing programmable Hall functionalities in planar geometries.

cond-mat.str-el↗

arXiv2023

Super-tetragonal Sr4Al2O7: a versatile sacrificial layer for high-integrity freestanding oxide membranes

Releasing the epitaxial oxide heterostructures from substrate constraints leads to the emergence of various correlated electronic phases and paves the way for integrations with advanced semiconductor technologies. Identifying a suitable water-soluble sacrificial layer, compatible with the high-quality epitaxial growth of oxide heterostructures, is currently the key to the development of large-scale freestanding oxide membranes. In this study, we unveil the super-tetragonal Sr4Al2O7 (SAOT) as a promising water-soluble sacrificial layer. The distinct low-symmetric crystal structure of SAOT enables a superior capability to sustain epitaxial strain, thus allowing for broad tunability in lattice constants. The resultant structural coherency and defect-free interface in perovskite ABO3/SAOT heterostructures effectively restrain crack formations during the water-assisted release of freestanding oxide membranes. For a variety of non-ferroelectric oxide membranes, the crack-free areas can span up to a few millimeters in length scale. These compelling features, combined with the inherent high-water solubility, make SAOT a versatile and feasible sacrificial layer for producing high-quality freestanding oxide membranes, thereby boosting their potential for innovative oxide electronics and flexible device designs.

cond-mat.mtrl-sci↗

arXiv2022

Flexoelectric control of a ferromagnetic metal

Electric fields have played a key role in discovering and controlling exotic electronic states of condensed matter. However, electric fields usually do not work in metals as free carriers tend to screen electrostatic fields. While a pseudo-electric field generated by inhomogeneous lattice strain, namely a flexoelectric field, can in principle work in all classes of materials, it remains experimentally unexplored in metals. Here, using heteroepitaxy and atomic-scale imaging, we show that flexoelectric fields can polarize a metallic oxide SrRuO3 with unexpectedly large Ru off-center displacements. We also observe that the flexoelectrically induced polar state of SrRuO3 leads to sizable lattice expansion, similar to the electrostrictive expansion caused by ionic displacements in dielectrics under an external electric field. We further suggest that flexoelectrically driven Ru off-centering promotes strong coupling between lattice and electronic degrees of freedom, possibly enhancing the ferromagnetism of SrRuO3. Beyond conventional electric fields, flexoelectric fields may universally engender novel electronic states and their control via pure atomic displacements in a nondestructive and fast manner.

cond-mat.mtrl-sci↗