arXiv subjects

Zhenhua Ni

Publications and source records attributed to Zhenhua Ni.

At least 19 recordsLinked to original sources

arXiv2026

Phonon-Bottleneck-Governed Ultrafast Hot-Carrier Super-Diffusion in Transition Metal Dichalcogenides

Two-dimensional transition metal dichalcogenides (TMDCs) are promising for low-power optoelectronics, yet their operational speed is widely considered constrained by low room-temperature mobilities and carrier transit delays. Here, by combining on-chip terahertz optoelectronic sampling with thermally evaporated Ohmic contacts, we eliminate external parasitic delays and directly capture the intrinsic interfacial photoresponse in unencapsulated TMDCs under zero bias. The devices achieve ultrafast relaxation lifetimes of 48.5 ps in MoS2/Au and 14.2 ps in MoSe2/Ag, translating to intrinsic 3-dB bandwidths of 4.4 GHz and 7.5 GHz, respectively. Spatial scanning and bias-dependent measurements show that this response is position-independent and bias-immune, ruling out conventional drift-limited transport and identifying hot-carrier super-diffusion driven by an interfacial electron temperature gradient as the operative mechanism. Furthermore, ultrafast pump-probe spectroscopy reveals that the macroscopic response time is quantitatively synchronized with the microscopic optical-to-acoustic phonon scattering lifetime governed by the intrinsic phonon bottleneck. Our findings establish phonon engineering as a viable paradigm to tailor non-equilibrium optoelectronic dynamics, offering a blueprint for zero-bias, ultrafast, self-powered devices.

cond-mat.mes-hall↗

arXiv2026

Non-Hermitian topology driven by an identity term: An exactly solvable paradigm

An identity term in the Hamiltonian is conventionally regarded as spectrally inert-it shifts energies but does not alter eigenstate topology. We show that under non-Hermitian skin pumping, this paradigm fails: a momentum-dependent identity term actively deforms the generalized Brillouin zone, thereby challenging established topological criteria that rely on fixed complex contours. Here, by introducing spin-orbit coupling into a Hatano-Nelson chain, we present an exact analytical solution for the entire non-Hermitian eigensystem under open boundary conditions. Our solution reveals how inter-cell spin-orbit coupling, synergizing with this non-trivial identity term, induces topological edge states and robust zero modes in the complete absence of chiral symmetry. This work establishes an exactly solvable paradigm for non-Hermitian topology beyond symmetry protection, and provides a rigorous benchmark for testing topological invariants in systems with momentum-dependent identity terms.

quant-ph↗

arXiv2025

Ultracompact high-Q whispering gallery mode microresonator in a non-closed waveguide path

Integrated photonic circuits are foundational for versatile applications, where high-performance traveling-wave optical resonators are critical. Conventional whispering-gallery mode microresonators (WGMRs) confine light in closed-loop waveguide paths, thus inevitably occupy large footprints. Here, we report an ultracompact high loaded Q silicon photonic WGMR in an open curved path instead. By leveraging spatial mode multiplexing, low-loss mode converter-based photonic routers enable reentrant photon recycling in a single non-closed waveguide. The fabricated device achieves a measured loaded Q-factor of 1.78*10^5 at 1554.3 nm with a 1.05 nm free spectral range in a ultracompact footprint of 0.00137 mm^2-6*smaller than standard WGMRs while delivering 100*higher Q-factor than photonic crystal counterparts. This work pioneers dense integration of high-performance WGMR arrays through open-path mode recirculation.

physics.optics↗

arXiv2025

Integrated Silicon Photonic Multichannel Optical Hybrid for Broadband Parallel Coherent Reception

We design and demonstrate a monolithically integrated silicon photonic multichannel optical hybrid for versatile broadband coherent reception, addressing the critical limitations of current wavelength multiplexed systems in scalability and power efficiency. The device combines a phase-compensated 90-degree optical hybrid with four robust three-stage Mach-Zehnder interferometer lattice filters, enabling 34-port functionality (two inputs and 32 outputs) for simultaneous analog and digital signal processing. Leveraging multimode interferometer designs,the chip achieves a broadband response with sub-dB passband uniformity across eight 200 GHz-spaced wavelength channels, while maintaining phase errors below 4 degrees over a 13.5 nm (1539-1552.5 nm) bandwidth with only 2.5 mW thermal tuning power.Experimentally, we validate its parallel-processing capability through RF channelizer reception (showing an average spurious-free dynamic range of 80.8 dB*Hz2/3 and image rejection ratio of 33.26 dB) and coherent optical communication (achieving 1.024 Tb/s data rate for 32-QAM signals with bit error rates far below the 20% SD-FEC threshold). The scheme enhances system performance with fully passive wavelength multiplexing integration, supporting high-fidelity uniformity and projecting scalability to 1.468 Tb/s. This work promises advancements in high-performance optoelectronic devices for next-generation AI-driven data centers and 5G-XG networks.

physics.optics↗

arXiv2025

Miniaturized Computational Dispersion-Engineered Silicon Photonic Vernier Caliper Spectrometer

The development of miniaturized spectrometers for cost-effective mobile applications remains challenging, as small footprints fundamentally degrade bandwidth and resolution. Typically, achieving high resolution necessitates extended and sophisticated optical paths for spectral decorrelation. These restrict bandwidth both physically (through resonant wavelength periodicity constraints) and mathematically (due to resulting ill-conditioned large matrix factorizations). Here, we report a spectrometer using a computational dispersion-engineered silicon photonic Vernier caliper. This deterministic design enables periodicity-suppressed orthogonal measurements by nature, thus overcoming the bandwidth-resolution-footprint limit of current chip-scale spectrometers. Leveraging the dispersion-engineered Vernier subwavelength grating microrings and factorization-free matrix computation, a spectral resolution of 1.4 pm is achieved throughout a bandwidth of >160 nm with a footprint of <55*35 μm2 in a single detection channel,establishing the highest bandwidth-to-resolution-to-footprint ratio (>57 μm-2) demonstrated to date. Furthermore, broadband densely overlapped molecular absorption spectra of hydrogen cyanide are precisely measured, resolving 49 R- and P-branch lines with linewidths ranging from 15 to 86 pm which is fundamentally challenging for compressive sensing approaches. Our chip-scale spectrometer provides a new path toward precise and real-time multi-species spectral analysis and facilitates their commercialization.

physics.optics↗

arXiv2025

Versatile and reconfigurable integrated silicon nitride photonic microresonator

Unlocking the full potential of integrated photonics requires versatile, multi-functional devices that can adapt to diverse application demands. However, confronting this challenge with conventional single-function resonators often results in tedious and complex systems. We present an elegant solution: a versatile and reconfigurable dual-polarization Si3N4 microresonator that represents a paradigm shift in on-chip photonic designs. Our device, based on a binary-star orbital architecture, can be dynamically reconfigured into three distinct topologies: a Möbius-like microcavity, a Fabry-Pérot resonator, and a microring resonator. This unprecedented functionality is enabled by a tunable balanced Mach-Zehnder interferometer that facilitates controllable mutual mode coupling of counterpropagating lights using a single control knob. We experimentally demonstrate that the device not only supports polarization-diverse operation on a compact footprint but also gives rise to a rich variety of physical phenomena, including a standing wave cavity, a traveling wave cavity, free spectral range multiplication, and the photonic pinning effect. These behaviors are accurately modeled using the Transfer Matrix Method and intuitively explained by Temporal Coupled Mode Theory. Our results underscore the profound potential for a chip-scale platform to realize reconfigurable reconstructive spectrometers and on-chip synthetic dimensions for topological physics.

physics.optics↗

arXiv2025

Million-Q Dual-Polarization Micro-Fabry-Perot Resonators in Silicon Nitride Photonic Integrated Circuits

Miniaturized Fabry-Perot standing-wave resonators and whispering-gallery travelling wave resonators constitute foundational building blocks for photonic integrated circuits. While both architectures offer transformative potential through high quality factors and dual-polarization operation, integrated Fabry-Perot resonators face significant challenges in simultaneously achieving ultra-high Q-factors and broadband thermal tunability for fundamental transverse magnetic (TM0) and transverse electric (TE0) modes within a compact footprint-primarily due to polarization-dependent losses in conventional chip-scale reflectors. Here, we overcome this limitation by demonstrating an integrated silicon nitride dual-polarization micro-Fabry-Perot resonator with polarization-insensitive Sagnac loop reflectors and multimode waveguides to effectively suppress losses and enable high-performances for both fundamental transverse magnetic (TM0) and transverse electric (TE0) modes. The device achieves record loaded quality factors of 2.38*106 (TM0) and 3.48*105 (TE0) respectively and intrinsic quality factors will be even higher. Moreover, both two modes are tuned over the whole free spectral range of around 0.111 nm (TM0) and 0.112 nm (TE0) with the thermal tuning efficiencies of approximately 1.04 pm/mW (TM0) and 1.24 pm/mW (TE0). These advances establish a new benchmark for compact, high-performance dual-polarization resonators in optical sensors, nonlinear and integrated quantum photonics.

physics.optics↗

arXiv2024

Exact Solutions Disentangle Higher-Order Topology in 2D Non-Hermitian Lattices

We report the exact closed-form solutions for higher-order topological states as well as explicit energy-spectrum relationships in two-dimensional (2D) non-Hermitian multi-orbital lattices with generalized boundary conditions. These analytical solutions unequivocally confirm that topological edge states in a 2D non-Hermitian system which feature point-gap topology must undergo the non-Hermitian skin effect along the edge. Under double open boundary conditions, the occurrence of the non-Hermitian skin effect for either topological edge states or bulk states can be accurately predicted by our proposed winding numbers. We unveil that the zero-energy topological corner state only manifests itself on a corner where two nearby gapped edge states intersect, and thus can either disappear completely or strengthen drastically due to the non-Hermitian skin effect of gapped topological edge states. Our analytical results offer direct insight into the non-Bloch band topology in two or higher dimensions and trigger experimental investigations into related phenomena such as quadrupole topological insulators and topological lasing.

physics.optics↗

arXiv2023

GaAs quantum dots under quasi-uniaxial stress: experiment and theory

The optical properties of excitons confined in initially-unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasi-uniaxial stress. To allow the validation of state-of-the-art computational tools for describing the optical properties of nanostructures, we determine the quantum dot morphology and the in-plane components of externally induced strain tensor at the quantum dot positions. Based on these \textsl{experimental} parameters, we calculate the strain-dependent excitonic emission energy, degree of linear polarization, and fine-structure splitting using a combination of eight-band ${\bf k}\cdot{\bf p}$ formalism with multiparticle corrections using the configuration interaction method. The experimental observations are quantitatively well reproduced by our calculations and deviations are discussed.

cond-mat.mes-hall↗

arXiv2019

High-performance silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm

A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the light absorption in graphene is enhanced while the metal absorption loss is reduced simultaneously, which helps greatly improve the responsivity as well as shorten the absorption region for achieving fast responses. Furthermore, metal-graphene-metal sandwiched electrodes are introduced to reduce the metal-graphene contact resistance, which is also helpful for improving the response speed. When the photodetector operates at 2 μm, the measured 3dB-bandwidth is >20 GHz (which is limited by the experimental setup) while the 3dB-bandwith calculated from the equivalent circuit with the parameters extracted from the measured S11 is as high as ~100 GHz. To the best of our knowledge, it is the first time to report the waveguide photodetector at 2 μm with a 3dB-bandwidth over 20 GHz. Besides, the present photodetectors also work very well at 1.55 μm. The measured responsivity is about 0.4 A/W under a bias voltage of -0.3 V for an optical power of 0.16 mW, while the measured 3dB-bandwidth is over 40 GHz (limited by the test setup) and the 3 dB-bandwidth estimated from the equivalent circuit is also as high as ~100 GHz, which is one of the best results reported for silicon-graphene photodetectors at 1.55 μm.

physics.app-ph↗

arXiv2019

Isolating hydrogen in hexagonal boron nitride bubbles by a plasma treatment

Atomically thin hexagonal boron nitride (h-BN) is often regarded as an elastic film that is impermeable to gases. The high stabilities in thermal and chemical properties allow h-BN to serve as a gas barrier under extreme conditions.In this work, we demonstrate the isolation of hydrogen in bubbles of h-BN via plasma treatment.Detailed characterizations reveal that the substrates do not show chemical change after treatment. The bubbles are found to withstand thermal treatment in air,even at 800 degree celsius. Scanning transmission electron microscopy investigation shows that the h-BN multilayer has a unique aligned porous stacking nature, which is essential for the character of being transparent to atomic hydrogen but impermeable to hydrogen molecules. We successfully demonstrated the extraction of hydrogen gases from gaseous compounds or mixtures containing hydrogen element. The successful production of hydrogen bubbles on h-BN flakes has potential for further application in nano/micro-electromechanical systems and hydrogen storage.

physics.app-ph↗

arXiv2018

Defect Engineering for Modulating the Trap States in Two-dimensional Photoconductor

Defect induced trap states are essential in determining the performance of semiconductor photodetectors. The de-trap time of carriers from a deep trap could be prolonged by several orders of magnitude as compared to shallow trap, resulting in additional decay/response time of the device. Here, we demonstrate that the trap states in two-dimensional ReS2 could be efficiently modulated by defect engineering through molecule decoration. The deep traps that greatly prolong the response time could be mostly filled by Protoporphyrin (H2PP) molecules. At the same time, carrier recombination and shallow traps would in-turn play dominant roles in determining the decay time of the device, which can be several orders of magnitude faster than the as-prepared device. Moreover, the specific detectivity of the device is enhanced (as high as ~1.89 x 10^13 Jones) due to the significant reduction of dark current through charge transfer between ReS2 and molecules. Defect engineering of trap states therefore provides a solution to achieve photodetectors with both high responsivity and fast response.

cond-mat.mtrl-sci↗

arXiv2018

Low-Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning

Metallic transition metal dichalcogenides (TMDs) have exhibited various exotic physical properties and hold the promise of novel optoelectronic and topological devices applications. However, the synthesis of metallic TMDs is based on gas-phase methods and requires high temperature condition. As an alternative to the gas-phase synthetic approach, lower temperature eutectic liquid-phase synthesis presents a very promising approach with the potential for larger-scale and controllable growth of high-quality thin metallic TMDs single crystals. Herein, we report the first realization of low-temperature eutectic liquid-phase synthesis of type-II Dirac semimetal PtTe2 single crystals with thickness ranging from 2 to 200 nm. The electrical measurement of synthesized PtTe2 reveals a record-high conductivity of as high as 3.3*106 S/m at room temperature. Besides, we experimentally identify the weak antilocalization behavior in the type-II Dirac semimetal PtTe2 for the first time. Furthermore, we develop a simple and general strategy to obtain atomically-thin PtTe2 crystal by thinning as-synthesized bulk samples, which can still retain highly crystalline and exhibits excellent electric conductivity. Our results of controllable and scalable low-temperature eutectic liquid-phase synthesis and layer-by-layer thinning of high-quality thin PtTe2 single crystals offer a simple and general approach for obtaining different thickness metallic TMDs with high-melting point transition metal.

cond-mat.mtrl-sci↗

arXiv2017

High performance position-sensitive-detector based on graphene-silicon heterojunction

Position-sensitive-detectors (PSDs) based on lateral photoeffect have been widely used in diverse applications, including optical engineering, aerospace and military fields. With increasing demands in long working distance, low energy consumption, and weak signal sensing systems, the poor responsivity of conventional Silicon-based PSDs has become a bottleneck limiting their applications. Herein, we propose a high-performance passive PSD based on graphene-Si heterostructure. The graphene is adapted as a photon absorbing and charge separation layer working together with Si as a junction, while the high mobility provides promising ultra-long carrier diffusion length and facilitates large active area of the device. A PSD with working area of 8 mm x 8 mm is demonstrated to present excellent position sensitivity to weak light at nWs level (much better than the limit of ~μWs of Si p-i-n PSDs). More importantly, it shows very fast response and low degree of non-linearity of ~3%, and extends the operating wavelength to the near infrared (IR) region (1319 and 1550 nm). This work therefore provides a new strategy for high performance and broadband PSDs.

physics.app-ph↗

arXiv2017

High-performance graphene-based electrostatic field sensor

Electrostatic sensing technology is widely utilized in both military and civilian applications, including electrostatic prevention in gas stations and various electronic devices. The high sensitivity of electrostatic sensor is capable to detect not only weak electrostatic charges, but also the weak disturbance of electrostatic field in distant. Here, we present a high-performance graphene-based electrostatic sensor. Combining the ultrahigh mobility of graphene and the long lifetime of carriers in lightly doped SiO2/Si substrate, our device achieves a fast response of ~2 us and detection limit of electrostatic potential as low as ~5 V, which is improved by an order of magnitude as compared to commercial product. The proposed device structure opens a promising pathway to high-sensitive electrostatic detection, and also greatly facilitates the development of novel sensors, e.g. portable and flexible electrostatic sensor.

cond-mat.mtrl-sci↗

arXiv2016

Synthesis, Optical, and Magnetic Properties of Ba$_2$Ni$_3$F$_{10}$ Nanowires

A low temperature hydrothermal route has been developed, and pure phase Ba$_2$Ni$_3$F$_{10}$ nanowires have been successfully prepared under the optimized conditions. Under the 325 nm excitation, the Ba$_2$Ni$_3$F$_{10}$ nanowires exhibit three emission bands with peak positions locating at 360 nm, 530 nm, and 700 nm, respectively. Combined with the first-principles calculations, the photoluminescence property can be explained by the electron transitions between the t2g and eg orbitals. Clear hysteresis loops observed below the temperature of 60 K demonstrates the weak ferromagnetism in Ba$_2$Ni$_3$F$_{10}$ nanowires, which has been attributed to the surface strain of nanowires. Exchange bias with blocking temperature of 55 K has been observed, which originates from the magnetization pinning under the cooling field due to antiferromagnetic core/weak ferromagnetic shell structure of Ba2Ni3F10 nanowires.

cond-mat.mtrl-sci↗

arXiv2016

Spectroscopic investigation of defects in two dimensional materials

Two-dimensional (2D) materials have been extensively studied in recent years due to their unique properties and great potential for applications. Different types of structural defects could present in 2D materials and have strong influence on their properties. Optical spectroscopic techniques, e.g. Raman and photoluminescence (PL) spectroscopy, have been widely used for defect characterization in 2D materials. In this review, we briefly introduce different types of defects and discuss their effects on the mechanical, electrical, optical, thermal, and magnetic properties of 2D materials. Then, we review the recent progress on Raman and PL spectroscopic investigation of defects in 2D materials, i.e. identifying of the nature of defects and also quantifying the numbers of defects. Finally, we highlight perspectives on defect characterization and engineering in 2D materials.

cond-mat.mtrl-sci↗

arXiv2016

Photodetecting and Light-Emitting Devices Based on Two Dimensional Materials

Two dimensional (2D) materials, e.g. graphene, transition metal dichalcogenides (TMDs), black phosphorus (BP), have demonstrated fascinating electrical and optical characteristics and exhibited great potential in optoelectronic applications. High performance and multifunctional devices were achieved by employing diverse designs of architectures, such as hybrid systems with nanostructured materials, bulk semiconductors and organics, forming 2D heterostructures. In this review, we mainly discuss the recent progresses of 2D materials in high responsive photodetectors, light-emitting devices and single photon emitters. Hybrid systems and van der Waals heterostructures based devices are emphasized, which exhibit great potential in state-of-the-art applications.

cond-mat.mtrl-sci↗